In　this　paper,　the　study　on　silicon　nano-mechanical　electro-thermal　probe　array　used　for　high-density　storage　has　been　performed.　After　the　introduction　of　structure　and　working　principle　of　the　NEMS　probe,　the　design　of　component　followed　by　using　both　theoretical　analysis　and　finite　element　analysis　(FEA).　By　using　advanced　(micro-)　nano-machining　technology,　the　piezoresistive　sensor　and　the　resistive　heater　have　been　integrated　on　the　silicon　micro-cantilever　and　the　component　has　been　fabricated.　Subsequently,　the　electro-thermal　performance　and　sensitivity　have　been　tested　agreeing　well　with　those　simulated.　About　31.6　Gb/in2　surface　data-writing　density　was　realized　successfully　on　thin　PMMA　film　by　using　AFM　equipment　with　optimized　thermal　writing　parameters.　©　2005　Elsevier　Ltd.　All　rights　reserved.