Few-layer epitaxial graphene with large domains on C-terminated 6H-SiC - Details

author：

Hu, Hailong (Hu, Hailong.) ^[1] | Ruammaitree, Akkawat (Ruammaitree, Akkawat.) ^[2] | Nakahara, Hitoshi (Nakahara, Hitoshi.) ^[3] | Asaka, Koji (Asaka, Koji.) ^[4] | Saito, Yahachi (Saito, Yahachi.) ^[5]

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Abstract：

Few-layer　graphene　with　average　thickness　of　3　monolayers　has　been　prepared　on　6H-SiC(0001¯)　via　annealing　in　argon　ambience.　The　surface　structure　and　morphology　are　characterized　by　reflection　high-energy　electron　diffraction,　Raman　spectroscopy　and　atomic　force　microscopy　(AFM).　Raman　mapping　measurement　reveals　that　the　graphene　layer　has　high　uniformity　in　doping　concentration　and　strains.　The　SiC　surface　after　graphitization　shows　steps　with　height　

Keyword：

Atomic force microscopy Graphene Morphology Raman spectroscopy Reflection high energy electron diffraction Silicon carbide Silicon compounds Surface structure

Community：

[ 1 ] [Hu, Hailong]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
[ 2 ] [Ruammaitree, Akkawat]Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan
[ 3 ] [Nakahara, Hitoshi]Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan
[ 4 ] [Asaka, Koji]Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan
[ 5 ] [Saito, Yahachi]Department of Quantum Engineering, Nagoya University, Nagoya 464-8603, Japan

Reprint 's Address：

Email：

ysaito@nagoya-u.jp

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Related Keywords：

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Source ：

ISSN： 0142-2421

Year： 2012

Issue： 6

Volume： 44

Page： 793-796

Language： English

1 . 2 2

JCR@2012

1 . 6 0 0

JCR@2023

JCR Journal Grade：4

CAS Journal Grade：4

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 14

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 3

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