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author:

Chi, Shang Sheng (Chi, Shang Sheng.) [1] | Hu, Wei (Hu, Wei.) [2] (Scholars:胡炜) | Xu, Yu Sen (Xu, Yu Sen.) [3] | Fan, Ming Hui (Fan, Ming Hui.) [4] (Scholars:樊明辉)

Indexed by:

EI Scopus

Abstract:

This paper presents a bandgap reference and an output-capacitorless LDO regulator with adaptive power transistors. The bandgap reference consists of a current reference circuit, a bipolar transistor and proportional-to-absolute-temperature (PTAT) voltage generators. The proposed LDO improves load transient and light load efficiency by permitting the regulator to transform itself between 2-stage and 3-stage topologies, depending on the load current condition. Cadence simulation with SMIC 0.18 μm process shows that the bandgap reference generates a reference voltage 569 mV and the quiescent current is only 0.23 μA, the proposed LDO generates an output voltage 1 V, the quiescent current is 0.88 μA (including bandgap reference) at no-load condition, the undershoot/overshoot voltage is 187 mV/152 mV and the settling time is 5 μs as load current suddenly changes from 0 to 100 mA, or vice versa. © 2014 Trans Tech Publications, Switzerland.

Keyword:

Capacitors Energy gap Power electronics Transistors

Community:

  • [ 1 ] [Chi, Shang Sheng]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 2 ] [Chi, Shang Sheng]Fujian Integrated Circuit Design Center, Fuzhou, China
  • [ 3 ] [Hu, Wei]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 4 ] [Hu, Wei]Fujian Integrated Circuit Design Center, Fuzhou, China
  • [ 5 ] [Xu, Yu Sen]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 6 ] [Xu, Yu Sen]Fujian Integrated Circuit Design Center, Fuzhou, China
  • [ 7 ] [Fan, Ming Hui]College of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 8 ] [Fan, Ming Hui]Fujian Integrated Circuit Design Center, Fuzhou, China

Reprint 's Address:

  • 胡炜

    [hu, wei]college of physics and information engineering, fuzhou university, fuzhou, china;;[hu, wei]fujian integrated circuit design center, fuzhou, china

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Source :

ISSN: 1660-9336

Year: 2014

Volume: 631-632

Page: 322-326

Language: English

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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