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Abstract：
By measuring the magneto-capacitance spectroscopy of an n-type InSb metal-insulator-semiconductor (MIS) structure, the 2-D hole subband in the p-type channel of the InSb MIS device was investigated under different magnetic fields at 1.2K. The results show that the on set energy of the p-type channel depends strongly on the magnetic field, which is mainly attributed to the dependence of the InSb band gap energy on the magnetic field.
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Journal of Infrared and Millimeter Waves
ISSN： 1001-9014
CN： 31-1577/O4
Year： 1997
Issue： 1
Volume： 16
Page： 7-10
0 . 6 0 0
JCR@2023
ESI Discipline： PHYSICS;
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SCOPUS Cited Count：
ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 5
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