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author:

Liu, Guixiang (Liu, Guixiang.) [1] | Huang, Xiangdong (Huang, Xiangdong.) [2] (Scholars:黄向东) | Zheng, Zhenhuan (Zheng, Zhenhuan.) [3] (Scholars:郑振环) | Li, Qiang (Li, Qiang.) [4] (Scholars:李强)

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Abstract:

For getting better properties and simplifying the process, the Cf/Cu composites were prepared by one-step hot-pressing sintering. The mechanism of the interface reaction between Cu and carbon fiber(Cf) and the microstructure of Cf/Cu composites were studied. The effects of different Ti contents on the density, hardness and bending strength of Cf/Cu composites were investigated. The results indicate that TiC layer surrounding Cf is generated in the ternary system of CuCTi and the TiC layer decreases the wetting angle between the liquid Cu and the solid Cf, which improves the combination between Cu and Cf. The mechanism of formation of TiC layer was discussed and a microstructure model of the reaction between Ti dissolved in the liquid Cu and C was brought forward. The formation of TiC layer is good for increasing the properties of the composites. When the mass fraction of Ti is 16.7%, the synthetic properties of the composites are the best in this system with Shore hardness HS66.94 and flexural strength 97.59MPa.

Keyword:

Bending strength Carbon fibers Composite materials Copper Glass ceramics Hardness Hot pressing Microstructure Sintering Titanium Titanium carbide Titanium compounds

Community:

  • [ 1 ] [Liu, Guixiang]College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
  • [ 2 ] [Huang, Xiangdong]College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
  • [ 3 ] [Zheng, Zhenhuan]College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China
  • [ 4 ] [Li, Qiang]College of Materials Science and Engineering, Fuzhou University, Fuzhou 350108, China

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Source :

Acta Materiae Compositae Sinica

ISSN: 1000-3851

CN: 11-1801/TB

Year: 2010

Issue: 1

Volume: 27

Page: 73-78

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 10

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