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author:

Xiao, Xiaojing (Xiao, Xiaojing.) [1] | Ye, Yun (Ye, Yun.) [2] (Scholars:叶芸) | Zheng, Longwu (Zheng, Longwu.) [3] | Guo, Tailiang (Guo, Tailiang.) [4] (Scholars:郭太良)

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EI Scopus CSCD

Abstract:

Carbon nanotube (CNT) cathodes prepared by electrophoretic deposition were treated by a combination of nickel electroplating and cathode corrosion technologies. The characteristics of the samples were measured by scanning electron microscopy, energy dispersive X-ray spectroscopy, J-E and F - N plots. After the treatment, the CNT cathodes showed improved field emission properties such as turn-on field, threshold electric field, current density, stability and luminescence uniformity. Concretely, the turn-on field decreased from 0.95 to 0.45 V/μm at an emission current density of 1 mA/cm2, and the threshold electric field decreased from 0.99 to 0.46 V/μm at a current density of 3 mA/cm2. The maximum current density was up to 7 mA/cm2 at a field of 0.48 V/μm. In addition, the current density of the CNT cathodes fluctuated at around 0.7 mA/cm2 for 20 h, with an initial current density 0.75 mA/cm2. The improvement in field emission properties was found to be due to the exposure of more CNT tips, the wider gaps among the CNTs and the infiltration of nickel particles. © 2012 Chinese Institute of Electronics.

Keyword:

Carbon nanotubes Corrosion Current density Deposition Electric fields Electrodes Electrophoresis Electroplating Field emission Field emission cathodes Nickel Scanning electron microscopy X ray spectroscopy

Community:

  • [ 1 ] [Xiao, Xiaojing]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 2 ] [Ye, Yun]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 3 ] [Zheng, Longwu]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 4 ] [Guo, Tailiang]Institute of Optoelectronic Display Technology, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China

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Source :

Journal of Semiconductors

ISSN: 1674-4926

CN: 11-5781/TN

Year: 2012

Issue: 5

Volume: 33

4 . 8 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 6

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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