The　surface-conduction　field-emission　cathode　arrays　were　fabricated　by　photolithography　with　the　magnetron　sputtered　SnO2　thin　films　on　glass　substrate.　The　impacts　of　the　fabrication　conditions,　particularly　the　SnO2　film　thicknessand　cathode-gate　gap,　on　microstructures　and　field　emission　characteristics　were　evaluated.　The　SnO2films　and　arrayswere　characterized　with　X-ray　diffraction　and　photoelectron　spectroscopy,　and　atomic　force　microscopy.　The　results　show　that　SnO2　was　deposited　at　the　cathode-gate　gap,　and　that　an　increase　of　film　thickness　enlarged　SnO2grain　size　and　increased　the　surface　roughness.　For　all　film　thickness,　the　emission　and　conduction　currents　were　found　to　be　completely　controlled　by　the　gate　voltage.　With　a　thickness　of　60　nm,　a　gapof　500　μm,　at　an　anode　voltage　of　3200　V　and　a　gate　voltage　of　200　V,　the　emission　efficiency　was　found　to　be　around　0.71%,　the　highest　brightness　reached　650　cd/m2.　We　suggest　that　SnO2　film　may　be　a　good　material　in　fabrication　of　surface-conduction　field-emission　cathode　arrays.