In　this　paper,　a　differential　multi-band　CMOS　low　noise　amplifier　(LNA),　operated　in　a　range　of　800–1700　MHz,　is　proposed.　In　this　design,　the　LNA　is　integrated　wide-band　interference　rejection　(input　band　selection　technology)　and　capacitive　cross-coupling　topologies,　which　can　improve　the　interference　rejection　and　noise　figure　preference.　Moreover,　the　conventional　notch　filter　technology　only　rejected　the　specified　frequency.　In　this　experiment,　by　using　the　proposed　wide-band　interference　rejection　technology,　the　LNA　can　reject　unwanted　signals　(out-of-band　signals)　and　image　signals　from　different　frequency.　Thus,　the　LNA　has　good　linearity　and　interference　rejection　performance.　With　the　increasing　use　of　frequency　spectrum,　the　proposed　technology　is　even　more　important.　The　post-simulation　results　of　proposed　LNA　show　that　the　voltage　gain　is　13–17.5　dB,　the　noise　figure　(NF)　is　less　than　3.4　dB,　and　the　third-order　intercept　point　(IIP3)　is　7.36　dBm.　The　LNA　consumes　8.96　mW　under　1.8　V　supply　voltage　in　TSMC　0.18-μm　RF　CMOS　process.　©　2015　Elsevier　GmbH