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author:

Sun, Jianbin (Sun, Jianbin.) [1] | Yu, Simin (Yu, Simin.) [2] | Zheng, Qiao (Zheng, Qiao.) [3] | Cheng, Shuying (Cheng, Shuying.) [4] | Wang, Xiechun (Wang, Xiechun.) [5] | Zhou, Haifang (Zhou, Haifang.) [6] | Lai, Yunfeng (Lai, Yunfeng.) [7] | Yu, Jinling (Yu, Jinling.) [8]

Indexed by:

EI

Abstract:

We investigated the performance of the inverted polymer solar cells with an electron transport layer of the La-doped TiO2 film. The different La-doped ratios of TiO2 films were prepared by a simple sol–gel method. The device with 0.5 mol% La-doped TiO2 film shows an enhancement of the power conversion efficiency comparing with that of the device with bare TiO2 film. Further studies confirm that the grain size of TiO2 with La3+ doped film is decreased and the compactness of the film is improved. Besides, La-doped TiO2 film shows the improved morphology and optical properties leading to the current density of the cells increase from 6.54 to 9.71 mA/cm2. © 2016, Springer Science+Business Media New York.

Keyword:

Electron transport properties Lanthanum compounds Optical properties Organic solar cells Sols Titanium dioxide

Community:

  • [ 1 ] [Sun, Jianbin]School of Physics and Information Engineering and Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Sun, Jianbin]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou; Jiangsu Province; 213164, China
  • [ 3 ] [Sun, Jianbin]Fujian Key Laboratory of New Energy Generation and Power Conversion, Fuzhou University, Fuzhou; Fujian Province; 350116, China
  • [ 4 ] [Yu, Simin]School of Physics and Information Engineering and Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 5 ] [Yu, Simin]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou; Jiangsu Province; 213164, China
  • [ 6 ] [Yu, Simin]Fujian Key Laboratory of New Energy Generation and Power Conversion, Fuzhou University, Fuzhou; Fujian Province; 350116, China
  • [ 7 ] [Zheng, Qiao]School of Physics and Information Engineering and Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 8 ] [Zheng, Qiao]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou; Jiangsu Province; 213164, China
  • [ 9 ] [Zheng, Qiao]Fujian Key Laboratory of New Energy Generation and Power Conversion, Fuzhou University, Fuzhou; Fujian Province; 350116, China
  • [ 10 ] [Cheng, Shuying]School of Physics and Information Engineering and Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 11 ] [Cheng, Shuying]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou; Jiangsu Province; 213164, China
  • [ 12 ] [Cheng, Shuying]Fujian Key Laboratory of New Energy Generation and Power Conversion, Fuzhou University, Fuzhou; Fujian Province; 350116, China
  • [ 13 ] [Wang, Xiechun]School of Physics and Information Engineering and Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 14 ] [Zhou, Haifang]School of Physics and Information Engineering and Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 15 ] [Lai, Yunfeng]School of Physics and Information Engineering and Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 16 ] [Yu, Jinling]School of Physics and Information Engineering and Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China

Reprint 's Address:

  • [zheng, qiao]school of physics and information engineering and institute of micro-nano devices and solar cells, fuzhou university, fuzhou; 350108, china;;[zheng, qiao]fujian key laboratory of new energy generation and power conversion, fuzhou university, fuzhou; fujian province; 350116, china;;[zheng, qiao]jiangsu collaborative innovation center of photovoltaic science and engineering, changzhou; jiangsu province; 213164, china

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Source :

Journal of Materials Science: Materials in Electronics

ISSN: 0957-4522

Year: 2017

Issue: 2

Volume: 28

Page: 2272-2278

2 . 3 2 4

JCR@2017

2 . 8 0 0

JCR@2023

ESI HC Threshold:306

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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