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author:

Xingwei, Zhong (Xingwei, Zhong.) [1] | Cai, Kui (Cai, Kui.) [2] | Chen, Pingping (Chen, Pingping.) [3] | Mei, Zhen (Mei, Zhen.) [4]

Indexed by:

EI

Abstract:

Thanks to its superior features of non-volatility, fast read/write speed, high endurance, and low power consumption, spin-Torque transfer magnetic random access memory (STT-MRAM) has become a promising candidate for the next generation non-volatile memories (NVMs) and storage class memories (SCMs). However, it has been found that the write errors and read errors caused by thermal fluctuation and process variation severely degrade the reliability of STT-MRAM. Moreover, process imperfection also causes a diversity of the raw bit error rate (BER) among different dies of STT-MRAM. In this paper, we propose the design of novel rate-compatible protograph low-density parity-check (RCP-LDPC) codes to correct memory cell errors and mitigate the raw BER diversity of STT-MRAM. In particular, to deal with the asymmetric property of the STT-MRAM channel, we first apply an independent and identically distributed (i.i.d.) channel adapter to symmetrize the STT-MRAM channel. We then present a modified protograph extrinsic information transfer (P-EXIT) algorithm for the symmetrized STT-MRAM channel. We further propose a combined guideline, including the modified P-EXIT algorithm, the asymptotic weight enumerator (AWE) analysis, as well as the actual error rate performance, for designing protograph LDPC codes with short information word lengths for STT-MRAM. By further applying a code extension approach, we design novel RCP-LDPC codes that can work with a single encoder/decoder. Simulation results show that our proposed RCP-LDPC codes outperform the well-known rate-compatible AR4JA protograph codes as well as the fixed-rate quasi-cyclic (QC) LDPC codes in terms of both the error rate performance and the convergence speed over the STT-MRAM channel. © 2013 IEEE.

Keyword:

Bit error rate Codes (symbols) Errors Forward error correction Integrated circuit design Magnetic recording Magnetic storage Magnetism MRAM devices Random access storage

Community:

  • [ 1 ] [Xingwei, Zhong]Science and Math Cluster, Singapore University of Technology and Design (SUTD), Singapore, Singapore
  • [ 2 ] [Cai, Kui]Science and Math Cluster, Singapore University of Technology and Design (SUTD), Singapore, Singapore
  • [ 3 ] [Chen, Pingping]College of Physics and Information, Fuzhou University, Fujian, China
  • [ 4 ] [Mei, Zhen]Science and Math Cluster, Singapore University of Technology and Design (SUTD), Singapore, Singapore
  • [ 5 ] [Mei, Zhen]Huawei Technologies Company, Ltd, Shenzhen; 518129, China

Reprint 's Address:

  • [cai, kui]science and math cluster, singapore university of technology and design (sutd), singapore, singapore

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Source :

IEEE Access

Year: 2019

Volume: 7

Page: 182425-182432

3 . 7 4 5

JCR@2019

3 . 4 0 0

JCR@2023

ESI HC Threshold:150

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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