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author:

Zhao, Qin (Zhao, Qin.) [1] | Zhang, Houcheng (Zhang, Houcheng.) [2] | Hu, Ziyang (Hu, Ziyang.) [3] | Hou, Shujin (Hou, Shujin.) [4] | Guo, Juncheng (Guo, Juncheng.) [5]

Indexed by:

EI

Abstract:

A new solar-driven electrochemical refrigerator model is proposed by integrating a dye-sensitized solar cell with a thermally regenerative electrochemical refrigerator. Considering various irreversible losses within the dye-sensitized solar cell, thermally regenerative electrochemical refrigerator as well as between them, mathematical formulas for the performance parameters of dye-sensitized solar cell and thermally regenerative electrochemical refrigerator as well as the solar-driven electrochemical refrigerator are derived. Based on the energy balance equation, the electric current relation between the dye-sensitized solar cell and the thermally regenerative electrochemical refrigerator are derived. The maximum cooling rate density and maximum coefficient of performance of the solar-driven electrochemical refrigerator could reach 800.47 W m−2 and 0.8, respectively. There exists an optimum thin film thickness of DSSC to optimize the system performance. A larger photoelectron absorption coefficient, specific charge capacity, isothermal coefficient or regenerative efficiency positively improves the solar-driven electrochemical refrigerator performance. However, a larger Schottky barrier, internal resistance of TRER and temperature difference between hot and cold heat reservoirs is unfavorable for the solar-driven electrochemical refrigerator performance. The obtained results may offer some guidance for the design and optimization of such an actual refrigerator. © 2020 Elsevier Ltd

Keyword:

Absorption refrigeration Coefficient of performance Dye-sensitized solar cells Electrochemical electrodes Film thickness Heat resistance Refrigerators Schottky barrier diodes

Community:

  • [ 1 ] [Zhao, Qin]Department of Microelectronic Science and Engineering, Ningbo University, Ningbo; 315211, China
  • [ 2 ] [Zhang, Houcheng]Department of Microelectronic Science and Engineering, Ningbo University, Ningbo; 315211, China
  • [ 3 ] [Hu, Ziyang]Department of Microelectronic Science and Engineering, Ningbo University, Ningbo; 315211, China
  • [ 4 ] [Hou, Shujin]College of Physics and Electronic Engineering, Nanyang Normal University, Nanyang; 473061, China
  • [ 5 ] [Guo, Juncheng]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China

Reprint 's Address:

  • [zhang, houcheng]department of microelectronic science and engineering, ningbo university, ningbo; 315211, china

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Source :

Applied Thermal Engineering

ISSN: 1359-4311

Year: 2020

Volume: 178

5 . 2 9 5

JCR@2020

6 . 1 0 0

JCR@2023

ESI HC Threshold:132

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 12

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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