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author:

Pang, Aiying (Pang, Aiying.) [1] | Li, Yafeng (Li, Yafeng.) [2] (Scholars:李亚峰) | Zhang, Huixing (Zhang, Huixing.) [3] | Wang, Yangzhong (Wang, Yangzhong.) [4] | Wei, Mingdeng (Wei, Mingdeng.) [5] (Scholars:魏明灯)

Indexed by:

EI Scopus SCIE

Abstract:

Ti1-xSnxO2 nanocrystals were successfully synthesized by using a simple solvothermal route, and its band energy gap broaden and flat band potential can be rationally regulated with increasing x value. Furthermore, Ti1-xSnxO2 nanocrystals were first used as the photoelectrode material for dye-sensitized solar cells. A cell made of Ti1-xSnxO2 (x = 0.3) exhibited the best photovoltaic performance. This is due to its most narrow band gap energies, most negative flat band potential and lowest dark current densities. After the surface of Ti1-xSnxO2 (x = 0.3) electrode was treated with TiCl4 solution, the cell sensitized by a mixed solution of N719 and D131 dye exhibited the best efficiency of 4.64% under the illumination of 1 sun (AM1.5, 100 mW cm(-2)). (C) 2012 Elsevier B.V. All rights reserved.

Keyword:

Dye-sensitized solar cells Nanocrystal Photovoltaic property Ti1-xSnxO2

Community:

  • [ 1 ] [Pang, Aiying]Fuzhou Univ, Inst Adv Energy Mat, Fuzhou 350002, Fujian, Peoples R China
  • [ 2 ] [Li, Yafeng]Fuzhou Univ, Inst Adv Energy Mat, Fuzhou 350002, Fujian, Peoples R China
  • [ 3 ] [Zhang, Huixing]Fuzhou Univ, Inst Adv Energy Mat, Fuzhou 350002, Fujian, Peoples R China
  • [ 4 ] [Wang, Yangzhong]Fuzhou Univ, Inst Adv Energy Mat, Fuzhou 350002, Fujian, Peoples R China
  • [ 5 ] [Wei, Mingdeng]Fuzhou Univ, Inst Adv Energy Mat, Fuzhou 350002, Fujian, Peoples R China

Reprint 's Address:

  • 魏明灯

    [Wei, Mingdeng]Fuzhou Univ, Inst Adv Energy Mat, Fuzhou 350002, Fujian, Peoples R China

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Source :

MATERIALS CHEMISTRY AND PHYSICS

ISSN: 0254-0584

Year: 2012

Issue: 1

Volume: 135

Page: 46-50

2 . 0 7 2

JCR@2012

4 . 3 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 4

SCOPUS Cited Count: 4

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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