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author:

Chen, W (Chen, W.) [1] (Scholars:陈为) | Hu, YQ (Hu, YQ.) [2] | He, JN (He, JN.) [3]

Indexed by:

CPCI-S

Abstract:

As the components operating at high frequency and switch mode excitations, parasitic parameter extractions of power electronics magnetics, such as transformer, have many special issues in view of the numerical field simulation. Parasitic capacitance related with leakage inductance and winding resistance in the lumped circuit model of the transformer is simulated which considers the influence of high frequency effects and magnetic field distributions and the coupling of the electrostatic and eddy current fields.

Keyword:

parasitic capacitance power electronics transformer

Community:

  • [ 1 ] Fuzhou Univ, EE Dept, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • 陈为

    [Chen, W]Fuzhou Univ, EE Dept, Fuzhou 350002, Peoples R China

Email:

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Source :

PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON ELECTROMAGNETIC FIELD PROBLEMS AND APPLICATIONS

Year: 2000

Page: 389-392

Language: English

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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