The　preparation　and　characterization　of　CuInS2　thin　films　on　ITO　glass　substrates　prepared　by　one-step　electrodeposition　have　been　reported.　Samples　were　characterized　using　X-ray　diffraction　(XRD),　energy　dispersive　X-ray　spectroscopy　(EDX)　and　scanning　electron　microscopy　(SEM).　The　results　indicate　that　CuInS2　is　the　major　phase　for　the　film　deposited　at　-1.0　V,　after　annealing　at　550　degrees　C　in　sulfur　atmosphere,　and　the　sample　is　Cu-rich　and　p-type　semiconductor.　Additionally,　the　energy　band　gap　and　carrier　concentration　for　the　sample　were　found　to　be　1.43　eV　and　4.20x10(17)　cm(-3),　respectively.　Furthermore,　the　maximum　photocurrent　density　of　the　sample　was　found　to　be　-1.15　inA/cm(2)　under　255　lx　illumination,　the　sample　shows　the　photo-enhancement　effect.