We　propose　graphene　oxide　(GO)　poly(3,4-ethylenedioxythiophene):　polystyrene　sulfonate　(PEDOT:PSS)　as　new　resistive　memory　material　for　non-volatile　bipolar　resistive　switching　memories,　GO-PEDOT:PSS　composites　show　great　potential　for　resistance-change　use　in　high　density　flexible　nonvolatile　memories.　Repetitive　high-speed　switching,　low　switching　voltage　(about　+/-　1-3V),　tight　distributions　of　HRS　and　LRS　and　long　retention　of　more　than　10(4)s　have　been　successfully　demonstrated.　The　mechanism　of　conduction　and　resistance　switching　are　studied.