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author:

Bharathi, B. (Bharathi, B..) [1] | Thanikaikarasan, S. (Thanikaikarasan, S..) [2] | Kollu, Pratap (Kollu, Pratap.) [3] | Chandrasekar, P. V. (Chandrasekar, P. V..) [4] | Mahalingam, T. (Mahalingam, T..) [5] | Lxtlilco, Luis (Lxtlilco, Luis.) [6]

Indexed by:

EI Scopus SCIE

Abstract:

Thin films of NiO have been prepared using potentiostatic electrodeposition technique from an aqueous electrolytic bath containing NiSO4. Deposited films have been characterized using x-ray diffraction, scanning electron microscopy and energy dispersive analysis by x-rays. X-ray diffraction patterns showed that the prepared films possess polycrystalline nature with face centered cubic structure. Surface morphology and film composition showed that films with better stoichiometry and smooth surface are obtained at optimized growth condition. Optical absorption analysis showed that the prepared films possess direct band gap value around 3.46 eV.

Keyword:

electrodeposition NiO optical absorption analysis thin films x-ray diffraction

Community:

  • [ 1 ] [Bharathi, B.]PSN Coll Engn & Technol, Sch Basic Engn & Sci, Ctr Sci & Appl Res, Tirunelveli 627152, Tamil Nadu, India
  • [ 2 ] [Thanikaikarasan, S.]PSN Coll Engn & Technol, Sch Basic Engn & Sci, Ctr Sci & Appl Res, Tirunelveli 627152, Tamil Nadu, India
  • [ 3 ] [Kollu, Pratap]Indian Inst Technol, Dept Met Engn & Mat Sci, DST INSPIRE Fac, Mumbai 400076, Maharashtra, India
  • [ 4 ] [Chandrasekar, P. V.]Fuzhou Univ, Inst Optoelect Display, Coll Phys & Informat Engn, Fuzhou 350002, Peoples R China
  • [ 5 ] [Mahalingam, T.]Ajou Univ, Dept Elect & Comp Engn, Suwon 443749, South Korea
  • [ 6 ] [Lxtlilco, Luis]Univ Politecn Estado Guerrero, Taxco 40290, Guerrero, Mexico

Reprint 's Address:

  • [Bharathi, B.]PSN Coll Engn & Technol, Sch Basic Engn & Sci, Ctr Sci & Appl Res, Tirunelveli 627152, Tamil Nadu, India

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Source :

JOURNAL OF NEW MATERIALS FOR ELECTROCHEMICAL SYSTEMS

ISSN: 1480-2422

Year: 2014

Issue: 3

Volume: 17

Page: 173-177

0 . 5 1 1

JCR@2014

0 . 7 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:355

JCR Journal Grade:4

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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