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author:

Zhou, Jian (Zhou, Jian.) [1] | Sa, Baisheng (Sa, Baisheng.) [2] (Scholars:萨百晟) | Sun, Zhimei (Sun, Zhimei.) [3] | Si, Chen (Si, Chen.) [4] | Ahuja, Rajeev (Ahuja, Rajeev.) [5]

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EI Scopus SCIE

Abstract:

We report that complete spin polarization and controllable spin polarization of carriers can be simultaneously realized in the Heusler alloy Mn2CoAl simply by applying external pressures based on first-principles studies. At ambient conditions, Mn2CoAl is a ferromagnetic spin-gapless semiconductor (SGS) with complete spin polarization. Under hydrostatic pressures up to 40 GPa, Mn2CoAl undergoes a series of electronic transitions from SGS with spin-up as a conducting channel to a ferromagnetic semiconductor and then to SGS with spin-down as a conducting channel and finally to a half metal, during which the magnetic moment remains as 2 mB. Such rich electronic transitions are attributed to different responses of the spin-up and spin-down electrons under pressure. This work highlights a desirable way to control the carrier's spin polarization and provides a new insight into the electron behavior in Mn2CoAl related Heusler alloys under pressure.

Keyword:

Community:

  • [ 1 ] [Zhou, Jian]Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
  • [ 2 ] [Sun, Zhimei]Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
  • [ 3 ] [Si, Chen]Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
  • [ 4 ] [Sa, Baisheng]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350100, Peoples R China
  • [ 5 ] [Sun, Zhimei]Beihang Univ, Ctr Integrated Computat Mat Engn, Int Res Inst Multidisciplinary Sci, Beijing 100191, Peoples R China
  • [ 6 ] [Si, Chen]Beihang Univ, Ctr Integrated Computat Mat Engn, Int Res Inst Multidisciplinary Sci, Beijing 100191, Peoples R China
  • [ 7 ] [Ahuja, Rajeev]Uppsala Univ, Dept Phys & Astron, S-75120 Uppsala, Sweden

Reprint 's Address:

  • [Sun, Zhimei]Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China

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Source :

RSC ADVANCES

ISSN: 2046-2069

Year: 2015

Issue: 90

Volume: 5

Page: 73814-73819

3 . 2 8 9

JCR@2015

3 . 9 0 0

JCR@2023

ESI Discipline: CHEMISTRY;

ESI HC Threshold:265

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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