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author:

Zhou, J. (Zhou, J..) [1] | Sa, B. (Sa, B..) [2] | Sun, Z. (Sun, Z..) [3] | Si, C. (Si, C..) [4] | Ahuja, R. (Ahuja, R..) [5]

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Abstract:

We report that complete spin polarization and controllable spin polarization of carriers can be simultaneously realized in the Heusler alloy Mn2CoAl simply by applying external pressures based on first-principles studies. At ambient conditions, Mn2CoAl is a ferromagnetic spin-gapless semiconductor (SGS) with complete spin polarization. Under hydrostatic pressures up to 40 GPa, Mn2CoAl undergoes a series of electronic transitions from SGS with spin-up as a conducting channel to a ferromagnetic semiconductor and then to SGS with spin-down as a conducting channel and finally to a half metal, during which the magnetic moment remains as 2 μB. Such rich electronic transitions are attributed to different responses of the spin-up and spin-down electrons under pressure. This work highlights a desirable way to control the carrier's spin polarization and provides a new insight into the electron behavior in Mn2CoAl related Heusler alloys under pressure. © The Royal Society of Chemistry.

Keyword:

Community:

  • [ 1 ] [Zhou, J.]School of Materials Science and Engineering, Beihang UniversityBeijing 100191, China
  • [ 2 ] [Sa, B.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350100, China
  • [ 3 ] [Sun, Z.]School of Materials Science and Engineering, Beihang UniversityBeijing 100191, China
  • [ 4 ] [Sun, Z.]Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang UniversityBeijing 100191, China
  • [ 5 ] [Si, C.]School of Materials Science and Engineering, Beihang UniversityBeijing 100191, China
  • [ 6 ] [Si, C.]Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang UniversityBeijing 100191, China
  • [ 7 ] [Ahuja, R.]Department of Physics and Astronomy, Uppsala University, Uppsala, 75120, Sweden

Reprint 's Address:

  • [Sun, Z.]School of Materials Science and Engineering, Beihang UniversityChina

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Source :

RSC Advances

ISSN: 2046-2069

Year: 2015

Issue: 90

Volume: 5

Page: 73814-73819

3 . 2 8 9

JCR@2015

3 . 9 0 0

JCR@2023

ESI HC Threshold:265

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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