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author:

Lin, Hang (Lin, Hang.) [1] | Xu, Ju (Xu, Ju.) [2] | Huang, Qingming (Huang, Qingming.) [3] (Scholars:黄清明) | Wang, Bo (Wang, Bo.) [4] | Chen, Hui (Chen, Hui.) [5] | Lin, Zebin (Lin, Zebin.) [6] | Wang, Yuansheng (Wang, Yuansheng.) [7]

Indexed by:

EI Scopus SCIE

Abstract:

The state-of-the-art alternating-current light-emitting diode (AC-LED) technique suffers from adverse lighting flicker during each AC cycle. Aiming to compensate the dimming time of AC-LED, herein, we report a novel Mg3Y2(Ge1-xSix)(3)O-12:Ce3+ inverse-garnet persistent phosphor whose afterglow is efficiently activated by blue light with persistent luminescence in millisecond range. It is experimentally demonstrated that Si doping tailors the host bandgap, so that both the electron charging and detrapping in the persistent luminescence process are optimized. To explore the origin of the millisecond afterglow, we performed a series of thermoluminescence analyses, revealing three types of continuously distributed traps in the host. Finally, an AC-LED prototype device was fabricated, which exhibits the warm white emission with a reduced percent flicker of 71.7%. These results demonstrate that the newly developed persistent phosphor might be a promising candidate applicable in low flickering AC-LED which has advantages of cheaper price, longer lifetime, and higher energy utilization efficiency.

Keyword:

flicker effect LED persistent luminescence phosphors trap

Community:

  • [ 1 ] [Lin, Hang]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Design & Assembly Funct Nanostruct, Fuzhou 350002, Fujian, Peoples R China
  • [ 2 ] [Xu, Ju]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Design & Assembly Funct Nanostruct, Fuzhou 350002, Fujian, Peoples R China
  • [ 3 ] [Wang, Bo]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Design & Assembly Funct Nanostruct, Fuzhou 350002, Fujian, Peoples R China
  • [ 4 ] [Chen, Hui]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Design & Assembly Funct Nanostruct, Fuzhou 350002, Fujian, Peoples R China
  • [ 5 ] [Lin, Zebin]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Design & Assembly Funct Nanostruct, Fuzhou 350002, Fujian, Peoples R China
  • [ 6 ] [Wang, Yuansheng]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Design & Assembly Funct Nanostruct, Fuzhou 350002, Fujian, Peoples R China
  • [ 7 ] [Lin, Hang]Fujian Prov Key Lab Nanomat, Fuzhou 350002, Fujian, Peoples R China
  • [ 8 ] [Xu, Ju]Fujian Prov Key Lab Nanomat, Fuzhou 350002, Fujian, Peoples R China
  • [ 9 ] [Wang, Yuansheng]Fujian Prov Key Lab Nanomat, Fuzhou 350002, Fujian, Peoples R China
  • [ 10 ] [Huang, Qingming]Fuzhou Univ, Instrumentat Anal & Res Ctr, Fuzhou 350002, Fujian, Peoples R China

Reprint 's Address:

  • [Wang, Yuansheng]Chinese Acad Sci, Fujian Inst Res Struct Matter, Key Lab Design & Assembly Funct Nanostruct, Fuzhou 350002, Fujian, Peoples R China

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2015

Issue: 39

Volume: 7

Page: 21835-21843

7 . 1 4 5

JCR@2015

8 . 5 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:335

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 145

SCOPUS Cited Count: 159

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

Online/Total:119/10071227
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