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Abstract:
Europium-doped gallium nitride (Eu:GaN) nanocrystals with hexagonal wurtzite structures were prepared from the decomposition of the EuxGa1-x(H2NCONH2)(6)Cl-3 precursor at a mild temperature of 350 degrees C. The absorption spectrum, the excitation spectra and the fluorescence emission spectra of Eu:GaN nanocrystals are measured and discussed. Eu:GaN has a strong fluorescence emission band in the visible region. Furthermore, the first-principles density functional theory has been adopted to explore the fluorescence mechanism. The results show that energy transfer should occur between the GaN host and Eu3+ ions under excitation at 370 nm, and thus the fluorescence emission efficiency of the Eu3+ ions can be improved. In order to further reduce the loss of fluorescence emission and increase the fluorescence quantum yield, Eu:GaN nanocrystals coated by biocompatible silica and dispersed in ethanol are also discussed.
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JOURNAL OF MATERIALS CHEMISTRY C
ISSN: 2050-7526
Year: 2017
Issue: 31
Volume: 5
Page: 7904-7910
5 . 9 7 6
JCR@2017
5 . 7 0 0
JCR@2023
ESI Discipline: MATERIALS SCIENCE;
ESI HC Threshold:306
JCR Journal Grade:1
CAS Journal Grade:2
Cited Count:
WoS CC Cited Count: 5
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 1
Affiliated Colleges: