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author:

Liu, Ming (Liu, Ming.) [1] (Scholars:刘明) | Gao, Chenghui (Gao, Chenghui.) [2] (Scholars:高诚辉) | Yang, Fuqian (Yang, Fuqian.) [3]

Indexed by:

EI Scopus SCIE

Abstract:

Considering the coupling effect between diffusion and stress on diffusion-induced stress presented in a lithium-ion battery, the finite element method is used to analyze the diffusion-induced interfacial delamination of a thin film from a deformable substrate under a potentiostatic condition. Both the film and the substrate are elastic-perfectly plastic, and solute atoms diffuse into the thin film only from top and side surfaces of the thin film. A linear traction-separation law is used to describe the bonding between the film and the substrate. Numerical results show that both the radial stress and the hoop stress in the material near the top surface of the thin film are at a tensile state during lithiation, which can lead to interface damage/delamination and surface cracking concurrently. A film-substrate structure consisting of a substrate with small elastic modulus and yield stress and a thin film of a small film thickness is desirable to inhibit interface damage and delamination.

Keyword:

diffusion-stress coupling finite element analysis interface damage lithium-ion battery thin films

Community:

  • [ 1 ] [Liu, Ming]Fuzhou Univ, Sch Mech Engn & Automat, Fuzhou 350116, Fujian, Peoples R China
  • [ 2 ] [Gao, Chenghui]Fuzhou Univ, Sch Mech Engn & Automat, Fuzhou 350116, Fujian, Peoples R China
  • [ 3 ] [Yang, Fuqian]Univ Kentucky, Dept Chem & Mat Engn, Mat Program, Lexington, KY 40506 USA

Reprint 's Address:

  • 高诚辉

    [Gao, Chenghui]Fuzhou Univ, Sch Mech Engn & Automat, Fuzhou 350116, Fujian, Peoples R China;;[Yang, Fuqian]Univ Kentucky, Dept Chem & Mat Engn, Mat Program, Lexington, KY 40506 USA

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Source :

MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

ISSN: 0965-0393

Year: 2017

Issue: 6

Volume: 25

1 . 7 9 3

JCR@2017

1 . 9 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:306

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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