Construction　of　heterostructure　by　intimately　interfacing　two　or　more　semiconductor　materials　with　different　geometrical　and　electronically　energetic　alignments　at　nanoscale　is　very　important　to　achieve　the　composite　photocatalysts　with　a　high　photocatalytic　efficiency.　Here,　we　in-situ　prepared　an　intimate　contact　MoS2/ZnIn2S4　heterostructure　photocatalyst　by　a　one-pot　solvothermal　reaction.　The　MoS2/ZnIn2S4　heterostructure　significantly　enhanced　the　photocatalytic　H-2　evolution　of　ZnIn2S4　under　visible　light　illumination.　The　hydrogen　evolution　rate　reaches　3891.6　mu　mol　g(-1)　h(-1)　over　5%-MoS2/ZnIn2S4,　which　exceeded　the　photocatalytic　activity　of　Pt-loaded　ZnIn2S4　samples.　The　subtle　atomic-level　intimate　contact　and　strong　interactions　between　ZnIn2S4　and　MoS2　was　ascribed　to　a　highly　efficient　charge　carrier　separation　and　thus　photocatalytic　activity　for　MoS2/ZnIn2S4.　These　results　provide　inspiration　for　the　design　of　composited　photocatalysts　with　efficient　photo　catalytic　H-2　evolution.