Ferroelectric　non-volatile　memory　devices　are　the　most　promising　type　of　memory　for　future　use　in　commercial　applications.　However,　conventional　planar　organic　ferroelectric　memory　transistors　usually　show　poor　performance　in　current　density,　operating　speed　and　mechanical　stability.　There　are　three　main　factors　which　restrict　the　performance　of　organic　ferroelectric　memory　transistors:　the　intrinsic　low　charge　mobility　of　the　organic　semiconductor　material;　the　large　surface　roughness　of　the　ferroelectric　layer;　and　the　relative　long　channel　length.　In　this　research,　a　novel　device　architecture　with　an　ultra-short　channel　length　was　invented.　Benefiting　from　the　short　channel　length,　the　memory　device　devised　in　this　research　exhibits　a　large　current　density　of　up　to　6.32　mA　cm(-2)　and　a　fast　operating　speed.　Furthermore,　the　current　flows　across　the　semiconductor　layer　from　the　bottom　mesh　source　electrode　to　the　top　drain　electrode,　which　reduced　the　influence　of　the　poor　interface　quality　caused　by　the　use　of　poly(vinylidene　fluoride-co-trifluoroethylene)　[P(VDF-TrFe)]　and　enhances　the　performance　of　mechanical　stability　under　bending.　In　addition,　the　main　memory　properties　are　comparable　or　superior　to　previously　reported　organic　ferroelectric　memories　and　inorganic　ferroelectric　memory　with　a　vertical　structure.　Therefore,　benefiting　from　the　ultra-short　channel　length　and　special　device　structure,　the　ferroelectric　memory　in　this　research　exhibited　a　large　driving　force,　excellent　bending　characteristics　and　outstanding　storage　performance,　which　has　great　potential　for　wearable　and　flexible　electric　devices.