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author:

Lin, Jinfeng (Lin, Jinfeng.) [1] | Lu, Qiling (Lu, Qiling.) [2] | Wu, Xiao (Wu, Xiao.) [3] (Scholars:吴啸) | Sun, Hailing (Sun, Hailing.) [4] | Lin, Cong (Lin, Cong.) [5] (Scholars:林枞) | Lin, Tengfei (Lin, Tengfei.) [6] (Scholars:林腾飞) | Xue, Kan-Hao (Xue, Kan-Hao.) [7] | Miao, Xiangshui (Miao, Xiangshui.) [8] | Sa, Baisheng (Sa, Baisheng.) [9] (Scholars:萨百晟) | Sun, Zhimei (Sun, Zhimei.) [10]

Indexed by:

EI Scopus SCIE

Abstract:

Herein, the tape-casting technique was used to fabricate an Er-doped (K0.5Na0.5)NbO3 (KNN: 0.02Er) laminar ceramic, which possesses a pseudo-cubic phase structure with regular cube-shaped grains. Considering the substitution behavior of the Er dopant in the KNN lattice, X-ray diffraction analysis and density functional theory simulations both verify that Er can replace K and Na sites. And Er-induced enlargement of the energy band gap of KNN: 0.02Er has been obtained in the reflectance spectra and simulations. Furthermore, the ceramic exhibits dual-mode down-conversion and up-conversion photoluminescence (PL). As a lead-free luminescent ferroelectric, the PL intensity of KNN: 0.02Er can be enhanced by polarization induced by electric poling. And the dual-mode PL can be obviously modulated under an electric field in an in situ, reversible, real-time and dynamical way. Our results offer an effective theoretical way to bridge the relationship between the crystal structure/chemical bonding environment and the performance of the KNN system, and also provide an opportunity to realize electrically controlled tuning of the PL response in KNN-based luminescent ferroelectrics and the corresponding optoelectronic devices.

Keyword:

Community:

  • [ 1 ] [Lin, Jinfeng]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 2 ] [Lu, Qiling]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 3 ] [Wu, Xiao]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 4 ] [Lin, Cong]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 5 ] [Lin, Tengfei]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 6 ] [Sa, Baisheng]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China
  • [ 7 ] [Sun, Hailing]Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
  • [ 8 ] [Xue, Kan-Hao]Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Res Ctr Optoelect, Wuhan 430074, Peoples R China
  • [ 9 ] [Miao, Xiangshui]Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan Natl Res Ctr Optoelect, Wuhan 430074, Peoples R China
  • [ 10 ] [Sun, Zhimei]Beihang Univ, Int Res Inst Multidisciplinary Sci, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
  • [ 11 ] [Sun, Zhimei]Beihang Univ, Int Res Inst Multidisciplinary Sci, Ctr Integrated Computat Mat Sci, Beijing 100191, Peoples R China

Reprint 's Address:

  • 吴啸 萨百晟

    [Wu, Xiao]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China;;[Sa, Baisheng]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Fujian, Peoples R China

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Source :

JOURNAL OF MATERIALS CHEMISTRY C

ISSN: 2050-7526

Year: 2019

Issue: 26

Volume: 7

Page: 7885-7892

7 . 0 5 9

JCR@2019

5 . 7 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:236

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 59

SCOPUS Cited Count: 57

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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