This　paper　reports　data　for　the　electrical　characteristics　and　the　operating　mechanisms　of　flexible　resistive　switching　devices　based　on　WS2　nanosheets　(NSs)　dispersed　in　a　poly(methyl　methacrylate)　(PMMA)　layer.　The　ON/OFF　ratio　of　the　memristive　device　based　on　an　Al/WS2　NSs:PMMA/indium　tin　oxides　(ITO)　structure　was　approximately　5.9　x　10(4).　The　memristive　device　based　on　the　WS2　NSs　also　exhibited　the　bipolar　switching　characteristics　with　low　power　consumption　and　great　performance　in　the　bent　state　with　radii　of　the　curvatures　of　20　and　10　mm.　Especially,　the　results　obtained　after　bending　the　device　were　similar　to　those　observed　before　bending.　The　device　showed　nearly　the　same　ON/OFF　ratio　for　a　retention　time　of　1　x　10(4)　sec,　and　the　number　of　endurance　cycles　was　greater　than　1　x　10(2).　The　set　voltage　and　the　reset　voltage　probability　distributions　for　the　setting　and　the　resetting　processes　indicated　bipolar　switching　characteristics.　The　operating　and　the　carrier　transport　mechanisms　of　the　Al/WS2　NSs:PMMA/ITO　device　could　be　explained　based　on　the　current-voltage　results　with　the　aid　of　an　energy　band　diagram.