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学者姓名：孙捷
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以超高密度Cu/Sn微凸点和Cu/SnAg微凸点为研究对象,采用COMSOL软件建立仿真模型,研究了不同焊料凸点高度对键合可靠性的影响;采用电镀法制备Cu/Sn凸点阵列和Cu/SnAg凸点阵列,重点对界面处金属间化合物(Intermetallic compounds,IMC)进行研究.结果表明,Cu/SnAg凸点高度的增加有利于降低凸点键合界面应力,从而提高芯片键合可靠性.金属凸点尺寸越小,界面处金属间化合物生长越快,空洞数量越多.雾锡凸点的晶粒尺寸大于亮锡凸点,而且晶界数量较少,使得凸点界面上IMC的生长速度较慢.因此,雾锡凸点能够有效减少凸点界面空洞的形成,SnAg合金替代纯锡材料可以进一步减少凸点界面空洞的形成.通过优化工艺条件,成功制备出点间距为8 μm,像素阵列为1 920×1 080的超高密度Cu/SnAg金属凸点.
Keyword ：
Cu/SnAg凸点 Cu/SnAg凸点 Cu/Sn凸点 Cu/Sn凸点 电镀 电镀 金属间化合物 金属间化合物
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| GB/T 7714 | 罗灿琳 , 林畅 , 曾煌杰 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 [J]. | 光电子技术 , 2025 , 45 (1) : 10-17 . |
| MLA | 罗灿琳 et al. "电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究" . | 光电子技术 45 . 1 (2025) : 10-17 . |
| APA | 罗灿琳 , 林畅 , 曾煌杰 , 张永爱 , 孙捷 , 严群 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 . | 光电子技术 , 2025 , 45 (1) , 10-17 . |
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As Micro-LED sizes shrink, luminescence efficiency drops significantly due to sidewall damage from plasma etching. This study introduces a precision-selective ion implantation (PSII) strategy to boost external quantum efficiency (EQE) and brightness of Micro-LED at high current density, vital for applications like augmented reality (AR) and optical communication, instead of relying on sidewall passivation for low current density efficiency. PSII's effects is systematically evaluated on electrical isolation and photoelectric properties. Results demonstrate that Micro/Nano-LED arrays with a pixel density up to 25,400 ppi are achieved through the PSII strategy. Turn-off leakage current is reduced, with improved carrier injection efficiency, EQE, and luminance. At 10,000 A cm- 2, EQE and brightness increased by approximate to 30% and approximate to 25%, respectively. Moreover, lattice damage induced by ion bombardment enhanced UV and blue light absorption while suppressing visible emission, which benefits photodetectors (PDs). Demonstrations in AR displays, optical communication systems, and UV PDs showed superior performance compared to etching-based methods. The modulation bandwidth reached 131.2 MHz, a 30% improvement, and PD photocurrent increased by approximate to 90%. This PSII-based pixelation strategy enables high-brightness Micro-LED displays with significant potential for multifunctional integrated applications, offering a robust alternative to traditional etching processes for advanced optoelectronic devices.
Keyword ：
Etching-damage-free pixelation strategy Etching-damage-free pixelation strategy Ion implantation Ion implantation Micro-LED display Micro-LED display Multifunctional integrated applications Multifunctional integrated applications
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| GB/T 7714 | Ye, Jinyu , Su, Wenjuan , Lin, Yibin et al. High-Performance Micro-LED Displays via Etching-Damage-Free Pixelation Strategy for Multifunctional Integrated Applications [J]. | ADVANCED SCIENCE , 2025 . |
| MLA | Ye, Jinyu et al. "High-Performance Micro-LED Displays via Etching-Damage-Free Pixelation Strategy for Multifunctional Integrated Applications" . | ADVANCED SCIENCE (2025) . |
| APA | Ye, Jinyu , Su, Wenjuan , Lin, Yibin , Peng, Yuyan , Zhou, Xiongtu , Guo, Tailiang et al. High-Performance Micro-LED Displays via Etching-Damage-Free Pixelation Strategy for Multifunctional Integrated Applications . | ADVANCED SCIENCE , 2025 . |
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In the field of quantum dot (QD)-based micro-light-emitting diode (mu LED) full-color display technology, achieving high color conversion efficiency (CCE) is one of the key performance indicators. In this work, a mu LED architecture is presented that incorporates an optimized nanorod array, with QDs and nanogapped gold nanoparticles (AuNNPs) embedded in the inter-rod gaps. By harnessing non-radiative energy transfer (NRET) and localized surface plasmon resonance (LSPR), the absorption and utilization of quantum well (QW) energy by the QDs are significantly enhanced. To ensure efficient current spreading and uniform light emission, graphene is employed as a transparent conductive layer to interconnect the nanorods. As graphene can transfer photogenerated carriers to the QDs, enhancing their quantum yield, it is also introduced as an intermediate insertion layer and support layer, allowing the integration of a second layer of QDs and AuNNPs on the light-emitting surface. This design maintains the electrical performance of the nanorod mu LED while achieving ultra-high CCE. Experimental results demonstrate that the proposed mu LED with nanorod structures and AuNNPs achieves a maximum CCE of 94%, representing a 102% improvement compared to conventional planar mu LEDs. These findings offer promising insights for advancing high-performance, full-color mu LED display technologies through nanoscale engineering.
Keyword ：
graphene graphene local surface plasmon local surface plasmon micro-LED micro-LED non-radiative energy non-radiative energy quantum dot quantum dot
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| GB/T 7714 | Fang, Aoqi , Li, Qingqing , Liu, Jixin et al. Ultra-High Quantum Dot Color Conversion in Graphene-Connected Nanorod Micro-LEDs via Non-Radiative Energy Transfer and Localized Surface Plasmon Resonance [J]. | LASER & PHOTONICS REVIEWS , 2025 . |
| MLA | Fang, Aoqi et al. "Ultra-High Quantum Dot Color Conversion in Graphene-Connected Nanorod Micro-LEDs via Non-Radiative Energy Transfer and Localized Surface Plasmon Resonance" . | LASER & PHOTONICS REVIEWS (2025) . |
| APA | Fang, Aoqi , Li, Qingqing , Liu, Jixin , Du, Zaifa , Tang, Penghao , Xu, Hao et al. Ultra-High Quantum Dot Color Conversion in Graphene-Connected Nanorod Micro-LEDs via Non-Radiative Energy Transfer and Localized Surface Plasmon Resonance . | LASER & PHOTONICS REVIEWS , 2025 . |
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It is an urgent task to create reliable, cost-effective, simple in technology elements for performing quantum computing with qubits based on pairs of photons having entangled polarizations. The conditions of soliton formation in a liquid crystal (LC) layer for generation of a pair of photons in an entangled quantum state (biphotons) during quantum calculations are considered. The geometrical dimensions of the soliton generated by a pulse of optical radiation, its dynamics and stability are estimated. Besides, propagation of both extraordinary and ordinary rays in the nematic LC with different boundary conditions is calculated. The paper is a demonstration of using display technologies and science for new generation of optical processing tasks. From another side, quantum computing can be used also in images processing for the tasks of display picture rendering. © 2025, John Wiley and Sons Inc. All rights reserved.
Keyword ：
Birefringence Birefringence Image processing Image processing Light modulation Light modulation Light polarization Light polarization Liquid crystal displays Liquid crystal displays Nonlinear optics Nonlinear optics Optical data processing Optical data processing Photons Photons Quantum optics Quantum optics Qubits Qubits Solitons Solitons
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| GB/T 7714 | Belyaev, Victor , Solomatin, Alexey , Kamalov, Timur et al. Liquid crystal spatial light modulator for quantum computing [C] . 2025 : 386-389 . |
| MLA | Belyaev, Victor et al. "Liquid crystal spatial light modulator for quantum computing" . (2025) : 386-389 . |
| APA | Belyaev, Victor , Solomatin, Alexey , Kamalov, Timur , Chausov, Denis , Latipov, Andrey , Petrushinin, Mikhail et al. Liquid crystal spatial light modulator for quantum computing . (2025) : 386-389 . |
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The development of immersive technologies is also taking place in the areas of quantum computer science. It is important to create models and methods of quantum computing and communications. An experiment on two identical samples of nanocrystals has shown that when they interact remotely, resonant states are destroyed, which can be considered as a manifestation of quantum entanglement. It can be assumed that the considered model of the motion and interaction of an electron in a quantum–dimensional object, a nanocrystal with a perfect crystal structure, corresponds to the quantum coherence and entanglement of electronic states, and the nanocrystal itself can be a source and recorder of entangled electronic states and photons. © 2025, John Wiley and Sons Inc. All rights reserved.
Keyword ：
Carbon Quantum Dots Carbon Quantum Dots Crystal structure Crystal structure Nanocrystals Nanocrystals Photons Photons Quantum communication Quantum communication Quantum computers Quantum computers Quantum optics Quantum optics Semiconductor quantum dots Semiconductor quantum dots
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| GB/T 7714 | Zhukov, Nikolai , Belyaev, Victor , Kuleshova, Yulia et al. Quantum Coherence and Entanglement of Electrons and Photons in Nanocrystals for VR/AR/MR/Metaverse Systems [C] . 2025 : 437-440 . |
| MLA | Zhukov, Nikolai et al. "Quantum Coherence and Entanglement of Electrons and Photons in Nanocrystals for VR/AR/MR/Metaverse Systems" . (2025) : 437-440 . |
| APA | Zhukov, Nikolai , Belyaev, Victor , Kuleshova, Yulia , Kuznetsov, Mikhail , Sun, Jie , Yan, Qun . Quantum Coherence and Entanglement of Electrons and Photons in Nanocrystals for VR/AR/MR/Metaverse Systems . (2025) : 437-440 . |
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In order to reduce the reverse leakage current of gallium nitride (GaN) p-i-n diode and improve the switching ratio of the device, the preparation process of GaN based quasi-vertical p-i-n diode was optimized from three aspects. First, the effects of metal and oxide etching masks on GaN step etching were compared, and it was found that the device etched with metal nickel (Ni) mask had better positive characteristics than silicon dioxide (SiO2) mask. Secondly, sidewall treatment was used to repair the damaged sidewall after etching, and the repair mechanism was discussed. Finally, the passivation layer was prepared by low temperature and high temperature growth respectively, and the performance of the device under different process conditions was compared. After the optimization of the preparation process, the leakage current of the quasi-vertical p-i-n diode was reduced by three orders of magnitude compared with the control group. The optimized device exhibits an ideal factor n of 1.12, turn-on voltage (Von) of 3.34 V, specific on-resistance (Ron,sp) of 2.27 m Omega & sdot; cm(2), positive and negative current density of 161.54 A/cm(2) and 2.55x10(-9 )A/cm(2), respectively, and a switching ratio of 6.35x10(10) .
Keyword ：
Anodes Anodes Cathodes Cathodes Epitaxial growth Epitaxial growth Etching Etching Gallium nitride Gallium nitride GaN GaN leakage current leakage current Leakage currents Leakage currents Nickel Nickel Optimization Optimization Passivation Passivation passivation layer optimization passivation layer optimization P-i-n diodes P-i-n diodes quasi-vertical diode quasi-vertical diode sidewall repair sidewall repair
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| GB/T 7714 | Ren, Zihan , Xu, Xiucheng , Guo, Weiling et al. Optimizing the Preparation Process of Quasi-Vertical GaN p-i-n Diode to Reduce Reverse Leakage and Increase Switching Ratio [J]. | IEEE JOURNAL OF QUANTUM ELECTRONICS , 2025 , 61 (2) . |
| MLA | Ren, Zihan et al. "Optimizing the Preparation Process of Quasi-Vertical GaN p-i-n Diode to Reduce Reverse Leakage and Increase Switching Ratio" . | IEEE JOURNAL OF QUANTUM ELECTRONICS 61 . 2 (2025) . |
| APA | Ren, Zihan , Xu, Xiucheng , Guo, Weiling , Gao, Haoran , Xu, Wanyu , Sun, Jie . Optimizing the Preparation Process of Quasi-Vertical GaN p-i-n Diode to Reduce Reverse Leakage and Increase Switching Ratio . | IEEE JOURNAL OF QUANTUM ELECTRONICS , 2025 , 61 (2) . |
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Traditional semiconductor used as channel materials in driving transistors suffer from significant performance degradation as the semiconductor thickness is reduced. The two-dimensional (2D) materials with smooth, dangling-bond-free surfaces, represented by graphene, can be alternatives. Graphene boasts several advantages, including structural stability, ultra-thin thickness, near-total transparency, exceptional flexibility, and high mobility. Therefore, graphene field-effect transistors (GFETs) in the paper are used to drive Micro-light-emitting diodes (Micro-LEDs), key elements in next-generation advanced displays due to their high resolution, high brightness, high contrast, etc. Importantly, this study addresses the two major bottlenecks i.e. Micro-LEDs' mass transfer and graphene transfer. That is, monolithically integrated devices of Micro-LED and its driver GFET are designed and fabricated, bypassing the issue of traditional Micro-LEDs' mass transfer. For the first time, transfer-free method by plasma-enhanced chemical vapor deposition (PECVD) is used to grow graphene directly on GaN Micro-LED samples and prepared graphene transistors. This approach avoids doping and damage to the graphene during the transfer process, significantly shortens the growth time, and improves the fabrication efficiency. The devices possess broad applications potential and compatibility with semiconductor planar processes. This study paves the way for the transfer-free growth of graphene and the integration of Micro-LEDs with 2D materials transistors.
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| GB/T 7714 | Liu, Jixin , Sun, Jie , Mei, Yu et al. Monolithic integration of GaN Micro-LEDs to active matrix driving transistors made on transfer-free graphene [J]. | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2025 , 186 . |
| MLA | Liu, Jixin et al. "Monolithic integration of GaN Micro-LEDs to active matrix driving transistors made on transfer-free graphene" . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 186 (2025) . |
| APA | Liu, Jixin , Sun, Jie , Mei, Yu , Fang, Aoqi , Tang, Penghao , Xu, Hao et al. Monolithic integration of GaN Micro-LEDs to active matrix driving transistors made on transfer-free graphene . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2025 , 186 . |
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Micro light-emitting diode (Micro-LED) displays have been considered promising candidate for reaching the augmented/virtual reality (AR/VR) display technology. However, it's challenging to attain the display application with ultra-high PPI (pixel per inch) and larger panel size in virtue of the difficulties of chip fabrication and subsequent bonding process. In this paper, we demonstrated a 0.7-inch active-matrix (AM) monolithic blue Micro-LED display integrated with silicon-based complementary metal oxide semiconductor (CMOS) driver by indium bump bonding. The display features a full high-definition (FHD) resolution of 1920 x 1080, a pixel pitch of 8 mu m, and a PPI of 3175. Key fabrication processes were investigated experimentally including self-alignment etching of mesa, elevation of the cathode to match the anode height, and preparation of uniform Micro-bumps array. The blue Micro-LED display exhibits excellent electrical and optical characteristic with a low forward voltage of 3.45 V. Moreover, a 3D model of integrated Micro-LED-CMOS was built by theoretical simulation and the finite element analysis was employed to evaluate the reliability of the heterogeneous integration. Finally, we illustrated the great prospect of the fabricated Micro-LED as the light engine for lightweight AR and spatial light field display.
Keyword ：
Active-Matrix Micro-LED Active-Matrix Micro-LED FHD-Resolution FHD-Resolution Finite element method Finite element method Micro-bumps array Micro-bumps array
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| GB/T 7714 | Li, Yang , Zhang, Kaixin , Zhi, Ting et al. 3175 PPI active-matrix Micro-LED device array towards full high-definition light engine [J]. | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2025 , 188 . |
| MLA | Li, Yang et al. "3175 PPI active-matrix Micro-LED device array towards full high-definition light engine" . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 188 (2025) . |
| APA | Li, Yang , Zhang, Kaixin , Zhi, Ting , Tao, Tao , Huang, Chunlei , Nie, Junyang et al. 3175 PPI active-matrix Micro-LED device array towards full high-definition light engine . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2025 , 188 . |
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The fabrication of uniform metal bump arrays with submicron-sized diameters is crucial for achieving Micro-LED displays with ultra-high pixel density. This study presents a fabrication strategy that utilizes an undercut sacrificial layer in the lift-off process to achieve fine-pitched metal bump arrays. The influences of sacrificial layer thickness and developing time on the undercut degree, as well as their effects on the morphology and dimensional consistency of bumps, are investigated. It is observed that increasing the developing time leads to a higher degree of undercut, not only facilitating the lift-off of the sacrificial layer but also resulting in an increased base radius of the metal bumps. By optimizing process parameters, we successfully achieved Au bump arrays with a base radius around 0.99 mu m, top radius around 0.3 mu m, and a pitch size of 1.4 mu m, exhibiting height nonuniformity below 5%. This fabrication strategy for uniform metal bump arrays with ultra-high density will greatly contribute to advancing Micro-LED technology towards high definition and high brightness.
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| GB/T 7714 | Lai, Zelei , Zou, Zhenyou , Ye, Jinyu et al. Fabrication of uniform submicron metal bump arrays based on undercut sacrificial layer for lift-off process [J]. | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2025 , 36 (12) . |
| MLA | Lai, Zelei et al. "Fabrication of uniform submicron metal bump arrays based on undercut sacrificial layer for lift-off process" . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 36 . 12 (2025) . |
| APA | Lai, Zelei , Zou, Zhenyou , Ye, Jinyu , Lin, Yibin , Zhou, Xiongtu , Sun, Jie et al. Fabrication of uniform submicron metal bump arrays based on undercut sacrificial layer for lift-off process . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2025 , 36 (12) . |
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Currently, due to their cost-effectiveness and excellent physical properties, indium and tin are frequently utilized as bump materials for micro-light emitting diodes (Micro-LEDs) and silicon complementary metal-oxide-semiconductor (CMOS) devices to realize flip-chip bonding technology. However, as micro-LED pixel sizes and spacings decrease, forming indium and tin bumps that meet bonding requirements becomes challenging. These bumps are difficult to form an ideal spherical shape in the reflow process and easy to cause interconnection problems between adjacent pixels, adversely affecting device performance. To address this, we propose a novel Au-Au bump technology for micro-LED flip-chip bonding. This technology aims to effectively avoid interconnection issues while simplifying the micro-LED process flow and reducing production costs. Therefore, this paper designed a micro-LED device with 2822 PPI, 640 x 360 resolution, and 9 mu m pixel pitch to verify the feasibility of Au-Au micro-bump bonding. During this process, Au bump with diameter of 3.9 mu m and 6.5 mu m were fabricated for micro-LED array and CMOS driver chip respectively, followed by integrating them using the flip-chip bonding process. Cross-sectional analysis confirmed the high reliability and stability of the AuAu connection, enabling the micro-LED device to function properly. Furthermore, the Au bump micro-LED exhibits greater electroluminescence (EL) intensity and brightness than the In bump micro-LED, potentially due to the optical losses incurred during the preparation of indium bumps within the micro-LED chip.
Keyword ：
Au-Au micro-bump Au-Au micro-bump Flip-chip bonding Flip-chip bonding Micro-LED Micro-LED Narrow pitch Narrow pitch
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| GB/T 7714 | Yang, Tianxi , Sun, Jie , Zhou, Yijian et al. 2822 PPI active matrix micro-LED display fabricated via Au-Au micro-bump bonding technology [J]. | DISPLAYS , 2025 , 87 . |
| MLA | Yang, Tianxi et al. "2822 PPI active matrix micro-LED display fabricated via Au-Au micro-bump bonding technology" . | DISPLAYS 87 (2025) . |
| APA | Yang, Tianxi , Sun, Jie , Zhou, Yijian , Lu, Yuchen , Li, Jin , Huang, Zhonghang et al. 2822 PPI active matrix micro-LED display fabricated via Au-Au micro-bump bonding technology . | DISPLAYS , 2025 , 87 . |
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