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学者姓名：王凌华
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Abstract ：
Aluminum alloys are renowned for their lightweight nature, resistance to oxidation, and impressive mechanical properties. Despite these advantages, their mechanical performance deteriorates significantly in extreme environments. Herein, we present an innovative solution by developing aluminum matrix composites (AMCs) that incorporate 3D printed alumina ceramic lattices. Our investigation demonstrates a remarkable 112.4 % increase in the strength of AMCs compared to pure aluminum, with a concurrent 54.8 % improvement in modulus under identical conditions. Additionally, as the volume fraction of the ceramic lattice varies from 0.21 to 0.45, the modulus of AMCs exhibits a noteworthy increase, ranging from 96.2 to 106.5 GPa, surpassing that of pure aluminum (68.8 GPa). Notably, even at temperatures of up to 300 degrees C, the strength of the Al2O3-Al composite matrix remains stable at 477.3 MPa. X-ray computed tomography analysis elucidates that the structural integrity of these composites predominantly relies on the load-bearing capacity of the ceramic lattices, complemented by the damping effect provided by the aluminum matrix. This innovative approach not only paves the way for scalable production of high-strength metal alloys in the industrial sector but also holds promise for substantial economic opportunities in the near future.
Keyword ：
Alumina lattice Alumina lattice Aluminum matrix composites Aluminum matrix composites Stereolithography 3D printing Stereolithography 3D printing Strength Strength X-ray computed tomography X-ray computed tomography
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| GB/T 7714 | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites [J]. | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 : 126-132 . |
| MLA | Zhu, Minmin et al. "Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites" . | JOURNAL OF MANUFACTURING PROCESSES 139 (2025) : 126-132 . |
| APA | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng , Yang, Dan , Zhang, Haizhong , Wang, Linghua et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites . | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 , 126-132 . |
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As the core component of fiber optic gyroscopes（FOG），the performance of the superluminescent diodes directly affects the accuracy of the FOG. The higher the output power of the superluminescent diodes，the better the signal-to-noise ratio received by the gyroscope. InP/AlGaInAs have the advantage of high electron confinement efficiency. However，due to the problem of Al oxidation，they pose certain risks in terms of application reliability. In this paper，the InP/InGaAsP are used as gain materials，and the electron confinement efficiency of the quantum wells is improved by adopting the broad bandgap InGaAsP electron blocking layer in the epi-structure. Experimental results show that the electron blocking layer increases the maximum output power of the laser diode from 69 mW to 92 mW. Furthermore，by optimizing the material growth rate to improve the quality of both the active region and the strained electron blocking layer，it is observed that the reliability of the laser diode is significantly improved after aging for 1 000 h，with threshold and power variation falling within acceptable ranges. Finally，superluminescent diode （SLD）chips were fabricated，and the tested results showed that the electron blocking layer increased the saturated output power of SLD chips from 19 mW to 24 mW at room temperature. The saturated operating current of SLD also increased，with a spectral width of 80 nm and a center wavelength of 1 500 nm. Furthermore，after aging for 1 000 h，the threshold and power of SLD remained stable without performance degradation. © 2024 Editorial Office of Chinese Optics. All rights reserved.
Keyword ：
Diodes Diodes Efficiency Efficiency Electrons Electrons Growth rate Growth rate Gyroscopes Gyroscopes III-V semiconductors III-V semiconductors Indium phosphide Indium phosphide Semiconducting indium phosphide Semiconducting indium phosphide Semiconductor alloys Semiconductor alloys Semiconductor lasers Semiconductor lasers Semiconductor quantum wells Semiconductor quantum wells
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| GB/T 7714 | Xue, Zhengqun , Wang, Linghua , Chen, Yuping . Preparation and Performance of 1.5 μm High-power Superluminescent Diodes [J]. | Chinese Journal of Luminescence , 2024 , 45 (4) : 644-650 . |
| MLA | Xue, Zhengqun et al. "Preparation and Performance of 1.5 μm High-power Superluminescent Diodes" . | Chinese Journal of Luminescence 45 . 4 (2024) : 644-650 . |
| APA | Xue, Zhengqun , Wang, Linghua , Chen, Yuping . Preparation and Performance of 1.5 μm High-power Superluminescent Diodes . | Chinese Journal of Luminescence , 2024 , 45 (4) , 644-650 . |
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High-performance electro-optic (EO) materials greatly enhance modulators and switches in various photonic applications. We investigate the evolution of the tolerance factor (t) and EO coefficient (rc) in A-site and B-site doped BaTiO3 (BT) thin films. Our analysis reveals that cation transmutation has a remarkable impact on their dielectric constant, spontaneous polarization, optical band gap, and EO coefficient. Notably, Pb-doped BT samples exhibit an even higher rc value of 336.5 pm/V, representing a nearly 60% increase compared to pure BT and approximately 11 times larger than that of LiNbO3. This substantial improvement in EO performance can be attributed to enhanced local structural heterogeneity resulting from cation dopants. Furthermore, infusing dopants in BT also result in good structural uniformity and reliable EO performances, regardless of temperature and frequency. Our study offers valuable insights into doping engineering for obtaining functional perovskite oxides, enabling the development of power-efficient, ultra-compact integrated nanophotonic devices.
Keyword ：
barium titanate barium titanate electro-optic electro-optic nanophotonic device nanophotonic device Pockels coefficient Pockels coefficient tolerance factor tolerance factor
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| GB/T 7714 | Zhu, Minmin , Zhang, Xianrong , Wei, Can et al. Chemical design of barium titanate thin films for nanophotonic devices [J]. | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) : 6263-6274 . |
| MLA | Zhu, Minmin et al. "Chemical design of barium titanate thin films for nanophotonic devices" . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY 107 . 9 (2024) : 6263-6274 . |
| APA | Zhu, Minmin , Zhang, Xianrong , Wei, Can , Yi, Xiaoyuan , Yang, Dan , Zhang, Haizhong et al. Chemical design of barium titanate thin films for nanophotonic devices . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) , 6263-6274 . |
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Grating-assisted, contra-directional couplers (GA-CDCs), owing to their four-port operations, can offer several important advantages over traditional, single waveguide-based Bragg gratings. However, how to flexibly design the spectral responses of GA-CDCs has been much less studied. We report the spectral tailoring methodology of GA-CDCs to achieve arbitrary, physically realizable, complex spectral responses. Silicon GA-CDCs with various customized responses are demonstrated using the methodology, including sidelobe-suppressed filters, single- and multi-channel flattop filters, sawtooth- and triangle-shaped filters, and three-channel photonic Hilbert transformers. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.
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| GB/T 7714 | Cheng, Rui , Zheng, Yanfeng , Feng, Jiawang et al. Spectral tailoring of silicon grating-assisted contra-directional couplers [J]. | OPTICS LETTERS , 2024 , 49 (24) : 7210-7213 . |
| MLA | Cheng, Rui et al. "Spectral tailoring of silicon grating-assisted contra-directional couplers" . | OPTICS LETTERS 49 . 24 (2024) : 7210-7213 . |
| APA | Cheng, Rui , Zheng, Yanfeng , Feng, Jiawang , Wang, Linghua . Spectral tailoring of silicon grating-assisted contra-directional couplers . | OPTICS LETTERS , 2024 , 49 (24) , 7210-7213 . |
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Integrated optical power splitters are basic but indispensable on-chip devices in silicon photonics.They can be used either for power distribution or monitoring,or as the building blocks for more complex devices or circuits.Although different types of optical power splitters with different architectures have been proposed and demonstrated,devices that could work with arbitrary power splitting ratio in a large bandwidth without polarization dependence are still rare to be seen.In this paper,we propose and investigate an optical power splitter with adiabatically tapered waveguide structures on a thick silicon nitride platform,which could meet the requirement mentioned above.With optimized structural parameters obtained by three-dimensional finite-difference time-domain(3D-FDTD)simulation,the polari-zation dependence of different power splitting ratio gets almost eliminated for each specific working wavelength.In a broad wavelength range(1 340-1 800 nm),the insertion loss(IL)of the device is below 1 dB,and the variation of the power splitting ratio(PSR)can be controlled within～±5％if compared with the targeted design value for 1 550 nm centered wavelength.Simple structure,relaxed critical dimensions,and good fabrication tolerance make this device compatible with the standard fabrication process in commercial silicon photonic foundries.
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| GB/T 7714 | ZHENG Langteng , CHEN Yiqiang , XUE Zhengqun et al. Broadband and polarization-independent arbitrary ratio integrated optical power splitter built on thick silicon nitride platform [J]. | 光电子快报（英文版） , 2024 , 20 (10) : 577-583 . |
| MLA | ZHENG Langteng et al. "Broadband and polarization-independent arbitrary ratio integrated optical power splitter built on thick silicon nitride platform" . | 光电子快报（英文版） 20 . 10 (2024) : 577-583 . |
| APA | ZHENG Langteng , CHEN Yiqiang , XUE Zhengqun , HUANG Jiwei , ZHU Minmin , WANG Linghua . Broadband and polarization-independent arbitrary ratio integrated optical power splitter built on thick silicon nitride platform . | 光电子快报（英文版） , 2024 , 20 (10) , 577-583 . |
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We design a bimodal interference sensor on a 400-nm-thick silicon nitride (SiN) platform, using a subwavelength grating (SWG) waveguide structure. By optimizing the structure parameters, the sensor exhibits a bulk sensitivity of 2100 nm/RIU and the surface sensitivity of 0.72 nm/nm. Compared with its counterparts in silicon, our device has similar performance, but can already be fabricated with accessed commercial foundry. © 2023 IEEE.
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| GB/T 7714 | Liao, Wenyu , Chen, Yiqiang , Wang, Linghua . Investigation of a Subwavelength Grating Bimodal Interferometric Sensor Built on Silicon Nitride Platform [C] . 2023 . |
| MLA | Liao, Wenyu et al. "Investigation of a Subwavelength Grating Bimodal Interferometric Sensor Built on Silicon Nitride Platform" . (2023) . |
| APA | Liao, Wenyu , Chen, Yiqiang , Wang, Linghua . Investigation of a Subwavelength Grating Bimodal Interferometric Sensor Built on Silicon Nitride Platform . (2023) . |
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本发明提出一种光通信波段宽带宽高效率水平端面耦合器及其制作方法，包括：硅衬底层，二氧化硅包覆层和全刻蚀的倒锥型硅纳米线波导；在所述全刻蚀的倒锥型硅纳米线波导上方的二氧化硅包覆层中，有三层数量、尺寸以及结构完全相同的氮化硅波导阵列。能在光通信波段实现普通单模光纤与硅集成光子芯片的高效率、大带宽，且非偏振相关的有效耦合，且具对准容差较大、器件结构参数选取灵活、易于加工等明显优点，有助于推动硅集成光芯片的封装以及进一步在光通信、光互连方面的应用研究。
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| GB/T 7714 | 王凌华 , 韩风阳 . 光通信波段宽带宽高效率水平端面耦合器及其制作方法 : CN202210084606.2[P]. | 2022-01-25 00:00:00 . |
| MLA | 王凌华 et al. "光通信波段宽带宽高效率水平端面耦合器及其制作方法" : CN202210084606.2. | 2022-01-25 00:00:00 . |
| APA | 王凌华 , 韩风阳 . 光通信波段宽带宽高效率水平端面耦合器及其制作方法 : CN202210084606.2. | 2022-01-25 00:00:00 . |
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本发明提出基于氮化硅平台的低损耗宽带宽波长复用/解复用器，包括一根条形波导；所述条形波导为以直线方式延伸的条状件，该条状件的顶面与底面平行，一侧以宽度渐变的方式形成输出端的锥状波导，另一侧以条状的矩形柱形成输入端的直波导；条形波导的锥状波导的两个侧面分别与第一锥形波导的输入端、第二锥形波导的输入端紧邻形成两个波长复用/解复用结构；所述第一锥形波导的输出端、第二锥形波导的输出端处均设有用于解耦的弯曲波导；第一锥形波导输出端、第二锥形波导输出端处均设有用于提高器件的消光比滤波结构；所述直波导的侧面与第三锥形波导的输出端紧邻形成模分复用结构；本发明具有大带宽，低损耗，高消光比等特点。
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| GB/T 7714 | 王凌华 , 郑浪腾 . 基于氮化硅平台的低损耗宽带宽波长复用/解复用器 : CN202210111218.9[P]. | 2022-01-29 00:00:00 . |
| MLA | 王凌华 et al. "基于氮化硅平台的低损耗宽带宽波长复用/解复用器" : CN202210111218.9. | 2022-01-29 00:00:00 . |
| APA | 王凌华 , 郑浪腾 . 基于氮化硅平台的低损耗宽带宽波长复用/解复用器 : CN202210111218.9. | 2022-01-29 00:00:00 . |
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Silicon nitride (SiN) is an ideal material which is compatible with complementary metal-oxide-semiconductor (CMOS) technology. Its advantages include suitability for a large spectral range, low propagation loss and low thermo-optic coefficient, etc. Wavelength division (de)multiplexing (WDM) device is a crucial component for optical transmission networks. In this paper, we demonstrate a six-channel WDM device built with angled multimode interferometer (AMMI) structure in SiN material. Using the first- and second-order self-imaging effects in the multimode waveguides, the number of the multiplexed channels is increased from 3 to 6, without increasing the overall length of the device. The device is designed to operate in the C+L band, and the central wavelength spacing between the neighboring channels is 20nm. The simulation results show that the insertion loss of the device in each channel is less than 0.81dB and the averaged crosstalk of the channels is ∼14.9dB. Meanwhile, the device also exhibits low temperature sensitivity and large fabrication tolerance, which is suitable for mass production in commercial foundries. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.
Keyword ：
CMOS integrated circuits CMOS integrated circuits Interferometers Interferometers Light transmission Light transmission MOS devices MOS devices Oxide semiconductors Oxide semiconductors Silicon nitride Silicon nitride Temperature Temperature
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| GB/T 7714 | Chen, Yiqiang , Liao, Wenyu , Wang, Linghua . A six-channel angled multimode interferometer in silicon nitride for wavelength division multiplexing [C] . 2023 . |
| MLA | Chen, Yiqiang et al. "A six-channel angled multimode interferometer in silicon nitride for wavelength division multiplexing" . (2023) . |
| APA | Chen, Yiqiang , Liao, Wenyu , Wang, Linghua . A six-channel angled multimode interferometer in silicon nitride for wavelength division multiplexing . (2023) . |
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A broadband and CMOS-compatible polarization beam splitter and rotator (PSR) built on the silicon nitride -on-silicon multilayer platform is presented. The PSR is realized by cascading a polarization beam splitter and a polarization rotator, which are both subtly constructed with an asymmetrical directional coupler waveguide struc-ture. The advantage of this device is that the function of PSR can be directly realized in the SiN layer, providing a promising solution to the polarization diversity schemes in SiN photonic circuits. The chip is expected to have high power handling capability as the light is input from the SiN waveguide. The use of silicon dioxide as the upper cladding of the device ensures its compatibility with the metal back-end-of-line process. By optimizing the struc-ture parameters, a polarization conversion loss lower than 1 dB and cross talk larger than 27.6 dB can be obtained for TM-TE mode conversion over a wavelength range of 1450 to 1600 nm. For TE mode, the insertion loss is lower than 0.26 dB and cross talk is larger than 25.3 dB over the same wavelength range. The proposed device has good potential in diversifying the functionalities of the multilayer photonic chip with high integration density.(c) 2023 Optica Publishing Group
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| GB/T 7714 | Wang, Linghua , Peng, Hejie , Zheng, Langteng et al. Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform [J]. | APPLIED OPTICS , 2023 , 62 (4) : 1046-1056 . |
| MLA | Wang, Linghua et al. "Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform" . | APPLIED OPTICS 62 . 4 (2023) : 1046-1056 . |
| APA | Wang, Linghua , Peng, Hejie , Zheng, Langteng , Chen, Huaixi , Zhang, Yazhen , Huang, Jiwei et al. Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform . | APPLIED OPTICS , 2023 , 62 (4) , 1046-1056 . |
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