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学者姓名：王凌华
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Abstract ：
High-performance electro-optic (EO) materials greatly enhance modulators and switches in various photonic applications. We investigate the evolution of the tolerance factor (t) and EO coefficient (rc) in A-site and B-site doped BaTiO3 (BT) thin films. Our analysis reveals that cation transmutation has a remarkable impact on their dielectric constant, spontaneous polarization, optical band gap, and EO coefficient. Notably, Pb-doped BT samples exhibit an even higher rc value of 336.5 pm/V, representing a nearly 60% increase compared to pure BT and approximately 11 times larger than that of LiNbO3. This substantial improvement in EO performance can be attributed to enhanced local structural heterogeneity resulting from cation dopants. Furthermore, infusing dopants in BT also result in good structural uniformity and reliable EO performances, regardless of temperature and frequency. Our study offers valuable insights into doping engineering for obtaining functional perovskite oxides, enabling the development of power-efficient, ultra-compact integrated nanophotonic devices.
Keyword ：
barium titanate barium titanate electro-optic electro-optic nanophotonic device nanophotonic device Pockels coefficient Pockels coefficient tolerance factor tolerance factor
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| GB/T 7714 | Zhu, Minmin , Zhang, Xianrong , Wei, Can et al. Chemical design of barium titanate thin films for nanophotonic devices [J]. | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) : 6263-6274 . |
| MLA | Zhu, Minmin et al. "Chemical design of barium titanate thin films for nanophotonic devices" . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY 107 . 9 (2024) : 6263-6274 . |
| APA | Zhu, Minmin , Zhang, Xianrong , Wei, Can , Yi, Xiaoyuan , Yang, Dan , Zhang, Haizhong et al. Chemical design of barium titanate thin films for nanophotonic devices . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) , 6263-6274 . |
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超辐射发光二极管作为光纤陀螺的核心元件，其性能直接影响光纤陀螺的精度；其中超辐射发光二极管出光功率越高，光纤陀螺接收信号信噪比越好。InP/AlGaInAs增益材料具有电子限制效率高的优点，然而由于Al元素容易氧化，面临一定的应用可靠性问题。本文采用InP/InGaAsP作为增益材料，通过在外延结构上采用宽带隙电子阻挡层来提高量子阱的电子限制效率。试验结果表明，激光芯片最大出光功率从69 mW提升至92 mW。在此基础上，通过优化材料沉积速率改善增益区和应变电子阻挡层材料质量。结果显示，激光芯片可靠性得到较为明显改善，经过1 000 h寿命老化，样品阈值和功率变化率在合格范围之内。最后，进行超辐射发光二极管芯片制备。测试表明，电子阻挡层使得室温下SLD芯片饱和出光功率从19 mW提高至24mW，饱和工作电流也有所提高，光谱宽度达到80 nm，光谱中心波长在1 500 nm附近；芯片1 000 h寿命老化阈值和光功率变化稳定，未出现性能退化样品。
Keyword ：
InP/InGaAsP InP/InGaAsP 材料生长速率 材料生长速率 电子阻挡结构 电子阻挡结构 超辐射发光二极管 超辐射发光二极管
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| GB/T 7714 | 薛正群 , 王凌华 , 陈玉萍 . 1.5μm高功率超辐射发光二极管的制备和性能 [J]. | 发光学报 , 2024 , 45 (04) : 644-650 . |
| MLA | 薛正群 et al. "1.5μm高功率超辐射发光二极管的制备和性能" . | 发光学报 45 . 04 (2024) : 644-650 . |
| APA | 薛正群 , 王凌华 , 陈玉萍 . 1.5μm高功率超辐射发光二极管的制备和性能 . | 发光学报 , 2024 , 45 (04) , 644-650 . |
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As the core component of fiber optic gyroscopes（FOG），the performance of the superluminescent diodes directly affects the accuracy of the FOG. The higher the output power of the superluminescent diodes，the better the signal-to-noise ratio received by the gyroscope. InP/AlGaInAs have the advantage of high electron confinement efficiency. However，due to the problem of Al oxidation，they pose certain risks in terms of application reliability. In this paper，the InP/InGaAsP are used as gain materials，and the electron confinement efficiency of the quantum wells is improved by adopting the broad bandgap InGaAsP electron blocking layer in the epi-structure. Experimental results show that the electron blocking layer increases the maximum output power of the laser diode from 69 mW to 92 mW. Furthermore，by optimizing the material growth rate to improve the quality of both the active region and the strained electron blocking layer，it is observed that the reliability of the laser diode is significantly improved after aging for 1 000 h，with threshold and power variation falling within acceptable ranges. Finally，superluminescent diode （SLD）chips were fabricated，and the tested results showed that the electron blocking layer increased the saturated output power of SLD chips from 19 mW to 24 mW at room temperature. The saturated operating current of SLD also increased，with a spectral width of 80 nm and a center wavelength of 1 500 nm. Furthermore，after aging for 1 000 h，the threshold and power of SLD remained stable without performance degradation. © 2024 Editorial Office of Chinese Optics. All rights reserved.
Keyword ：
Diodes Diodes Efficiency Efficiency Electrons Electrons Growth rate Growth rate Gyroscopes Gyroscopes III-V semiconductors III-V semiconductors Indium phosphide Indium phosphide Semiconducting indium phosphide Semiconducting indium phosphide Semiconductor alloys Semiconductor alloys Semiconductor lasers Semiconductor lasers Semiconductor quantum wells Semiconductor quantum wells
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| GB/T 7714 | Xue, Zhengqun , Wang, Linghua , Chen, Yuping . Preparation and Performance of 1.5 μm High-power Superluminescent Diodes [J]. | Chinese Journal of Luminescence , 2024 , 45 (4) : 644-650 . |
| MLA | Xue, Zhengqun et al. "Preparation and Performance of 1.5 μm High-power Superluminescent Diodes" . | Chinese Journal of Luminescence 45 . 4 (2024) : 644-650 . |
| APA | Xue, Zhengqun , Wang, Linghua , Chen, Yuping . Preparation and Performance of 1.5 μm High-power Superluminescent Diodes . | Chinese Journal of Luminescence , 2024 , 45 (4) , 644-650 . |
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Integrated optical power splitters are basic but indispensable on-chip devices in silicon photonics. They can be used either for power distribution or monitoring, or as the building blocks for more complex devices or circuits. Although different types of optical power splitters with different architectures have been proposed and demonstrated, devices that could work with arbitrary power splitting ratio in a large bandwidth without polarization dependence are still rare to be seen. In this paper, we propose and investigate an optical power splitter with adiabatically tapered waveguide structures on a thick silicon nitride platform, which could meet the requirement mentioned above. With optimized structural parameters obtained by three-dimensional finite-difference time-domain (3D-FDTD) simulation, the polarization dependence of different power splitting ratio gets almost eliminated for each specific working wavelength. In a broad wavelength range (1 340–1 800 nm), the insertion loss (IL) of the device is below 1 dB, and the variation of the power splitting ratio (PSR) can be controlled within ∼±5% if compared with the targeted design value for 1 550 nm centered wavelength. Simple structure, relaxed critical dimensions, and good fabrication tolerance make this device compatible with the standard fabrication process in commercial silicon photonic foundries. © Tianjin University of Technology 2024.
Keyword ：
A A
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| GB/T 7714 | Zheng, L. , Chen, Y. , Xue, Z. et al. Broadband and polarization-independent arbitrary ratio integrated optical power splitter built on thick silicon nitride platform [J]. | Optoelectronics Letters , 2024 , 20 (10) : 577-583 . |
| MLA | Zheng, L. et al. "Broadband and polarization-independent arbitrary ratio integrated optical power splitter built on thick silicon nitride platform" . | Optoelectronics Letters 20 . 10 (2024) : 577-583 . |
| APA | Zheng, L. , Chen, Y. , Xue, Z. , Huang, J. , Zhu, M. , Wang, L. . Broadband and polarization-independent arbitrary ratio integrated optical power splitter built on thick silicon nitride platform . | Optoelectronics Letters , 2024 , 20 (10) , 577-583 . |
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A broadband and CMOS-compatible polarization beam splitter and rotator (PSR) built on the silicon nitride -on-silicon multilayer platform is presented. The PSR is realized by cascading a polarization beam splitter and a polarization rotator, which are both subtly constructed with an asymmetrical directional coupler waveguide struc-ture. The advantage of this device is that the function of PSR can be directly realized in the SiN layer, providing a promising solution to the polarization diversity schemes in SiN photonic circuits. The chip is expected to have high power handling capability as the light is input from the SiN waveguide. The use of silicon dioxide as the upper cladding of the device ensures its compatibility with the metal back-end-of-line process. By optimizing the struc-ture parameters, a polarization conversion loss lower than 1 dB and cross talk larger than 27.6 dB can be obtained for TM-TE mode conversion over a wavelength range of 1450 to 1600 nm. For TE mode, the insertion loss is lower than 0.26 dB and cross talk is larger than 25.3 dB over the same wavelength range. The proposed device has good potential in diversifying the functionalities of the multilayer photonic chip with high integration density.(c) 2023 Optica Publishing Group
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| GB/T 7714 | Wang, Linghua , Peng, Hejie , Zheng, Langteng et al. Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform [J]. | APPLIED OPTICS , 2023 , 62 (4) : 1046-1056 . |
| MLA | Wang, Linghua et al. "Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform" . | APPLIED OPTICS 62 . 4 (2023) : 1046-1056 . |
| APA | Wang, Linghua , Peng, Hejie , Zheng, Langteng , Chen, Huaixi , Zhang, Yazhen , Huang, Jiwei et al. Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform . | APPLIED OPTICS , 2023 , 62 (4) , 1046-1056 . |
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为了准确测量米级长度线型狭缝波导的准横电波(TE)和准横磁波(TM)的色散,设计了一种马赫-曾德尔干涉仪(MZI)的色散测量光路.介绍了相位拟合法和平衡波长法的测量原理,并结合测量光路进行测量.测量结果表明:滤除偏振模式间的串扰噪声,可进一步提高色散测量的准确度;通过调整波导的狭缝尺寸,可对其色散进行有效调控,当狭缝厚度为0.1μm时,波导在1 440～1 640 nm波长范围内具有接近零且平坦的色散.
Keyword ：
色散 色散 集成光波导 集成光波导 马赫-曾德尔干涉仪 马赫-曾德尔干涉仪
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| GB/T 7714 | 林智辉 , 王凌华 , 朱世德 et al. 面向米级狭缝波导的偏振模式色散测量 [J]. | 光通信技术 , 2023 , 47 (6) : 66-71 . |
| MLA | 林智辉 et al. "面向米级狭缝波导的偏振模式色散测量" . | 光通信技术 47 . 6 (2023) : 66-71 . |
| APA | 林智辉 , 王凌华 , 朱世德 , 王少昊 . 面向米级狭缝波导的偏振模式色散测量 . | 光通信技术 , 2023 , 47 (6) , 66-71 . |
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We design a bimodal interference sensor on a 400-nm-thick silicon nitride (SiN) platform, using a subwavelength grating (SWG) waveguide structure. By optimizing the structure parameters, the sensor exhibits a bulk sensitivity of 2100 nm/RIU and the surface sensitivity of 0.72 nm/nm. Compared with its counterparts in silicon, our device has similar performance, but can already be fabricated with accessed commercial foundry. © 2023 IEEE.
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| GB/T 7714 | Liao, Wenyu , Chen, Yiqiang , Wang, Linghua . Investigation of a Subwavelength Grating Bimodal Interferometric Sensor Built on Silicon Nitride Platform [C] . 2023 . |
| MLA | Liao, Wenyu et al. "Investigation of a Subwavelength Grating Bimodal Interferometric Sensor Built on Silicon Nitride Platform" . (2023) . |
| APA | Liao, Wenyu , Chen, Yiqiang , Wang, Linghua . Investigation of a Subwavelength Grating Bimodal Interferometric Sensor Built on Silicon Nitride Platform . (2023) . |
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Silicon nitride (SiN) is an ideal material which is compatible with complementary metal-oxide-semiconductor (CMOS) technology. Its advantages include suitability for a large spectral range, low propagation loss and low thermo-optic coefficient, etc. Wavelength division (de)multiplexing (WDM) device is a crucial component for optical transmission networks. In this paper, we demonstrate a six-channel WDM device built with angled multimode interferometer (AMMI) structure in SiN material. Using the first- and second-order self-imaging effects in the multimode waveguides, the number of the multiplexed channels is increased from 3 to 6, without increasing the overall length of the device. The device is designed to operate in the C+L band, and the central wavelength spacing between the neighboring channels is 20nm. The simulation results show that the insertion loss of the device in each channel is less than 0.81dB and the averaged crosstalk of the channels is ∼14.9dB. Meanwhile, the device also exhibits low temperature sensitivity and large fabrication tolerance, which is suitable for mass production in commercial foundries. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.
Keyword ：
CMOS integrated circuits CMOS integrated circuits Interferometers Interferometers Light transmission Light transmission MOS devices MOS devices Oxide semiconductors Oxide semiconductors Silicon nitride Silicon nitride Temperature Temperature
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| GB/T 7714 | Chen, Yiqiang , Liao, Wenyu , Wang, Linghua . A six-channel angled multimode interferometer in silicon nitride for wavelength division multiplexing [C] . 2023 . |
| MLA | Chen, Yiqiang et al. "A six-channel angled multimode interferometer in silicon nitride for wavelength division multiplexing" . (2023) . |
| APA | Chen, Yiqiang , Liao, Wenyu , Wang, Linghua . A six-channel angled multimode interferometer in silicon nitride for wavelength division multiplexing . (2023) . |
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A compact and broadband polarization beam splitter (PBS) based on silicon (Si) nitride (SiN)-on-Si-on-insulator multilayer platform with vertical asymmetrical directional coupler (ADC) is designed and analyzed. The vertical ADC is consisted of two waveguides, which are placed in the bottom Si layer and upper SiN layer separately. It is found that by properly choosing the values of the structure parameters, especially taking advantages of the extra freedom of the relative location between these two waveguides, the performance of the PBS can be significantly improved. By incorporating tapered structures into the coupling region in the further step, bandwidth of 294 nm, which is determined by the insertion loss of <1 dB and the extinction ratio of >20 dB in both polarizations, is realized within a coupling length as compact as 6.9 mu m. The proposed device has a good potential to be applied in three-dimensional photonic integration, where higher integration density or more on-chip functions can be realized.
Keyword ：
photonic integration photonic integration polarization beam splitter polarization beam splitter silicon photonics silicon photonics vertical asymmetrical directional coupler vertical asymmetrical directional coupler
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| GB/T 7714 | Peng, Hejie , Zheng, Langteng , Zhang, Yazhen et al. Design and analysis of a compact and broadband polarization beam splitter on silicon nitride on silicon-on-insulator multilayer platform using a partially overlapped vertical asymmetrical directional coupler [J]. | OPTICAL ENGINEERING , 2023 , 62 (12) . |
| MLA | Peng, Hejie et al. "Design and analysis of a compact and broadband polarization beam splitter on silicon nitride on silicon-on-insulator multilayer platform using a partially overlapped vertical asymmetrical directional coupler" . | OPTICAL ENGINEERING 62 . 12 (2023) . |
| APA | Peng, Hejie , Zheng, Langteng , Zhang, Yazhen , Huang, Jiwei , Wei, Rongshan , Wang, Shaohao et al. Design and analysis of a compact and broadband polarization beam splitter on silicon nitride on silicon-on-insulator multilayer platform using a partially overlapped vertical asymmetrical directional coupler . | OPTICAL ENGINEERING , 2023 , 62 (12) . |
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本发明提出基于氮化硅平台的低损耗宽带宽波长复用/解复用器，包括一根条形波导；所述条形波导为以直线方式延伸的条状件，该条状件的顶面与底面平行，一侧以宽度渐变的方式形成输出端的锥状波导，另一侧以条状的矩形柱形成输入端的直波导；条形波导的锥状波导的两个侧面分别与第一锥形波导的输入端、第二锥形波导的输入端紧邻形成两个波长复用/解复用结构；所述第一锥形波导的输出端、第二锥形波导的输出端处均设有用于解耦的弯曲波导；第一锥形波导输出端、第二锥形波导输出端处均设有用于提高器件的消光比滤波结构；所述直波导的侧面与第三锥形波导的输出端紧邻形成模分复用结构；本发明具有大带宽，低损耗，高消光比等特点。
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| GB/T 7714 | 王凌华 , 郑浪腾 . 基于氮化硅平台的低损耗宽带宽波长复用/解复用器 : CN202210111218.9[P]. | 2022-01-29 00:00:00 . |
| MLA | 王凌华 et al. "基于氮化硅平台的低损耗宽带宽波长复用/解复用器" : CN202210111218.9. | 2022-01-29 00:00:00 . |
| APA | 王凌华 , 郑浪腾 . 基于氮化硅平台的低损耗宽带宽波长复用/解复用器 : CN202210111218.9. | 2022-01-29 00:00:00 . |
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