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学者姓名：杨尊先
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基于量子点(QDs)的发光二极管器件(QLEDs)因其出色的色彩饱和度和方便的溶液制造工艺而引起了学术界的极大兴趣.目前,镉基红绿蓝光QLEDs的外量子效率(EQE)都已经达到理论极限,但是还存在严重的载流子注入不平衡的现象,这会导致器件的稳定性和寿命大幅度降低.文章通过一种简单的方法对电子传输层(ETL)进行掺杂处理,从而降低电子迁移率,使器件实现更为平衡的载流子注入.在ZnMgO的乙醇溶液中加入适量的乙醇胺(EA)溶液,胺根离子(NH2-)可以填补ZnMgO中的氧空位,从而调控ZnMgO的电子迁移率.对比于控制器件,优化器件的EQE提升到 14.6%,电流效率(CE)提升到60.7 cd/A,分别提升了1.87倍和1.94倍,同时峰值亮度达到252402 cd/m2.
Keyword ：
乙醇胺 乙醇胺 电子传输层 电子传输层 载流子注入 载流子注入 量子点发光二极管 量子点发光二极管
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| GB/T 7714 | 陈烨 , 杨尊先 , 郭太良 . 载流子注入速率调控实现高效稳定的量子点发光二极管 [J]. | 真空科学与技术学报 , 2025 , 45 (4) : 317-325 . |
| MLA | 陈烨 等. "载流子注入速率调控实现高效稳定的量子点发光二极管" . | 真空科学与技术学报 45 . 4 (2025) : 317-325 . |
| APA | 陈烨 , 杨尊先 , 郭太良 . 载流子注入速率调控实现高效稳定的量子点发光二极管 . | 真空科学与技术学报 , 2025 , 45 (4) , 317-325 . |
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Perovskite quantum dots (PQDs) have attracted more and more attention in light-emitting diode (LED) devices due to their outstanding photoelectric properties. Surface ligands not only enable size control of quantum dots but also enhance their optoelectronic performance. However, the efficiency of exciton recombination in PQDs is often hindered by the desorption dynamics of surface ligands, leading to suboptimal electrical performance. In this study, sodium methanesulfonate (NaMeS) was successfully introduced during PQD synthesis and ligand exchange, where the S=O groups effectively interacted with the perovskite components. The NaMeS-modified PQD films exhibited significantly improved surface morphology, radiative recombination efficiency, and carrier mobility. Consequently, Pe-LEDs derived from NaMeS-capped PQDs achieved a remarkable enhancement in performance with a maximum external quantum efficiency of 9.41%. This work thus provides a novel and effective strategy for the development of high-performance PQDs and their applications in LEDs.
Keyword ：
ligand exchange ligand exchange perovskite quantumdots perovskite quantumdots radiativerecombination radiativerecombination sodium methanesulfonate sodium methanesulfonate surface passivation surface passivation
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| GB/T 7714 | Ye, Yuliang , Wang, Jiaxiang , Yang, Zunxian et al. Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices [J]. | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (4) : 6639-6647 . |
| MLA | Ye, Yuliang et al. "Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices" . | ACS APPLIED MATERIALS & INTERFACES 17 . 4 (2025) : 6639-6647 . |
| APA | Ye, Yuliang , Wang, Jiaxiang , Yang, Zunxian , Chen, Ye , Zhang, Hui , Bai, Yuting et al. Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices . | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (4) , 6639-6647 . |
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Perovskite quantum dots (PQDs) have emerged as promising candidates for next-generation high-quality lighting and high-definition displays due to their outstanding luminescence properties, characterized by a narrow emission spectrum and tunable color. However, during the purification process involving polar solvents, ligand detachment from the quantum dot surface often induces crystal defects, thereby compromising their long-term stability. Herein, the effects of various post-processing strategies on PQD performance are systematically explored, including the use of oleic acid (OA), didodecyldimethylammonium bromide (DDAB), and their combinations, alongside OA-assisted synthesis. Furthermore, a synergistic post-processing strategy based on DDAB-NaMeS (sodium methanesulfonate) is proposed to elucidate the mechanism of ligand reconstruction on the quantum dot surface during purification. The resulting PQDs demonstrated excellent stability over a storage period exceeding one month, and the corresponding Quantum Dots Light-Emitting Diodes (QLEDs) achieved a peak external quantum efficiency (EQE) of 9.82%, representing a 1.91-fold improvement over standard devices. These QLEDs exhibited exceptional optoelectronic performance, underscoring their potential for application in other sulfonic acid ligands and perovskite-based materials.
Keyword ：
ligand exchange ligand exchange light-emitting diodes light-emitting diodes perovskite quantum dots perovskite quantum dots post-treatment post-treatment surface reconstruction surface reconstruction
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| GB/T 7714 | Wang, Jiaxiang , Yang, Zunxian , Chen, Ye et al. Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes [J]. | ADVANCED OPTICAL MATERIALS , 2025 , 13 (8) . |
| MLA | Wang, Jiaxiang et al. "Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes" . | ADVANCED OPTICAL MATERIALS 13 . 8 (2025) . |
| APA | Wang, Jiaxiang , Yang, Zunxian , Chen, Ye , Zhang, Hui , Chen, Yue , Bai, Yuting et al. Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes . | ADVANCED OPTICAL MATERIALS , 2025 , 13 (8) . |
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Quantum dot (QD) based light-emitting diode devices (QLEDs) attracted significant academic interest due to their outstanding color saturation and convenient solution-based manufacturing processes. Currently, the external quantum efficiency (EQE) of red, green, and blue QLEDs reached their own theoretical limits. However, there was still a common phenomenon of roll-off existed in QLEDs. In this work, QLEDs with an ultra low roll-off were realized via simple carrier injection regulation strategy in achieving carrier recombination balance and exhibited excellent repeatability. By modifying quantum dots and electron transport layer (ETL), the champion device with the peak EQE of 15.2 %, and a current efficiency (CE) of 63.4 cd/A was successfully fabricated, which were 1.9 and 2.0 times greater than those of the control devices, respectively. The devices delivered a peak brightness of 266,778 cd/m2, and the EQE remained at 15.0 % at a brightness of 50,000 cd/m2, staying above 14 % within the range of 3000 to 200,000 cd/m2. At a voltage of 10 V, the peak EQE of the optimized devices decreased by only 7.6 % when compared with their optimum value of EQEs, while the EQE of the control device declined by 26.6 %. Finally, analysis of 40 different batches of devices revealed an average EQE of 14.3 %, demonstrating that this strategy exhibited good repeatability. This approach provided a convenient means to regulate carrier injection and further elucidated the relationship between roll-off and carrier injection balance in QLEDs, proposing a strategy to enhance their performance and simultaneously mitigate roll-off.
Keyword ：
Low roll-off Low roll-off QLEDs QLEDs Quantum dots (QDs) Quantum dots (QDs) Repeatability Repeatability
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| GB/T 7714 | Chen, Ye , Yang, Zunxian , Wang, Jiaxiang et al. Dual optimization strategies to achieve low roll-off and stable quantum dot light-emitting diodes [J]. | OPTICAL MATERIALS , 2025 , 160 . |
| MLA | Chen, Ye et al. "Dual optimization strategies to achieve low roll-off and stable quantum dot light-emitting diodes" . | OPTICAL MATERIALS 160 (2025) . |
| APA | Chen, Ye , Yang, Zunxian , Wang, Jiaxiang , Zhang, Hui , Chen, Yue , Jiang, Xudong et al. Dual optimization strategies to achieve low roll-off and stable quantum dot light-emitting diodes . | OPTICAL MATERIALS , 2025 , 160 . |
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Artificial photoelectric synapses exhibit great potential for overcoming the Von Neumann bottleneck in computational systems. All-inorganic halide perovskites hold considerable promise in photoelectric synapses due to their superior photon-harvesting efficiency. In this study, a novel wavy-structured CsPbBr3/ZnO hybrid film was realized by depositing zinc oxide (ZnO) onto island-like CsPbBr3 film via atomic layer deposition (ALD) at 70 degrees C. Due to the capability of ALD to grow high-quality films over small surface areas, dense and thin ZnO film filled the gaps between the island-shaped CsPbBr3 grains, thereby enabling reduced light-absorption losses and efficient charge transport between the CsPbBr3 light absorber and the ZnO electron-transport layer. This ZnO/island-like CsPbBr3 hybrid synaptic transistor could operate at a drain-source voltage of 1.0 V and a gate-source voltage of 0 V triggered by green light (500 nm) pulses with low light intensities of 0.035 mW/cm(2). The device exhibited a quiescent current of similar to 0.5 nA. Notably, after patterning, it achieved a significantly reduced off-state current of 10(-11) A and decreased the quiescent current to 0.02 nA. In addition, this transistor was able to mimic fundamental synaptic behaviors, including excitatory postsynaptic currents (EPSCs), paired-pulse facilitation (PPF), short-term to long-term plasticity (STP to LTP) transitions, and learning-experience behaviors. This straightforward strategy demonstrates the possibility of utilizing neuromorphic synaptic device applications under low voltage and weak light conditions.
Keyword ：
atomic layer deposition atomic layer deposition island-like perovskite film island-like perovskite film metal oxide metal oxide quiescent current quiescent current synaptic hybrid phototransistors synaptic hybrid phototransistors
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| GB/T 7714 | Liu, Jiahui , Ye, Yuliang , Yang, Zunxian . Island-like Perovskite Photoelectric Synaptic Transistor with ZnO Channel Layer Deposited by Low-Temperature Atomic Layer Deposition [J]. | MATERIALS , 2025 , 18 (12) . |
| MLA | Liu, Jiahui et al. "Island-like Perovskite Photoelectric Synaptic Transistor with ZnO Channel Layer Deposited by Low-Temperature Atomic Layer Deposition" . | MATERIALS 18 . 12 (2025) . |
| APA | Liu, Jiahui , Ye, Yuliang , Yang, Zunxian . Island-like Perovskite Photoelectric Synaptic Transistor with ZnO Channel Layer Deposited by Low-Temperature Atomic Layer Deposition . | MATERIALS , 2025 , 18 (12) . |
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Nonlinear characteristics are essential for neuromorphic devices to process high-dimensional and unstructured data. However, enabling a device to realize a nonlinear response under the same stimulation condition is challenging as this involves two opposing processes: simultaneous charge accumulation and recombination. In this study, a hybrid transistor based on a mixed-halide perovskite was fabricated to achieve dynamic nonlinear changes in synaptic plasticity. The utilization of a light-induced mixed-bandgap structure within the mixed perovskite film has been demonstrated to increase the recombination paths of photogenerated carriers of the hybrid film, thereby promoting the formation of nonlinear signals in the device. The constructed heterojunction optoelectronic synaptic transistor, formed by combining a mixed-halide perovskite with a p-type semiconductor, generates dynamic nonlinear decay responses under 400 nm light pulses with an intensity as low as 0.02 mW/cm2. Furthermore, it has been demonstrated that nonlinear photocurrent growth can be achieved under 650 nm light pulses. It is important to note that this novel nonlinear response is characterized by its dynamism. These improvements provide a novel method for expanding the modulation capability of optoelectronic synaptic devices for synaptic plasticity. © 2025 by the authors.
Keyword ：
Heterojunctions Heterojunctions Optoelectronic devices Optoelectronic devices Perovskite solar cells Perovskite solar cells Photoelectricity Photoelectricity Plasticity Plasticity Transistors Transistors
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| GB/T 7714 | Liu, Jiahui , Yang, Zunxian , Zheng, Yujie et al. A Perovskite-Based Photoelectric Synaptic Transistor with Dynamic Nonlinear Response [J]. | Photonics , 2025 , 12 (7) . |
| MLA | Liu, Jiahui et al. "A Perovskite-Based Photoelectric Synaptic Transistor with Dynamic Nonlinear Response" . | Photonics 12 . 7 (2025) . |
| APA | Liu, Jiahui , Yang, Zunxian , Zheng, Yujie , Su, Wenkun . A Perovskite-Based Photoelectric Synaptic Transistor with Dynamic Nonlinear Response . | Photonics , 2025 , 12 (7) . |
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Photoelectronic transistors had attracted significant attention in the field of neuromorphic computing, as they integrated efficient sensing, memory, and processing capabilities into a single device. The design of multilayer heterostructures offered novel opportunities for developing multifunctional optoelectronic devices, particularly for neuromorphic optoelectronic devices that required integrated non-volatile memory and excellent optical response characteristics. TIPS-pentacene films with High-quality were successfully prepared through liquid surface growth and evaporation crystallization, and these films were further transferred to target substrates for heterostructure devices. Based on this strategy, a CsPbBr3/PMMA/TIPS-pentacene heterojunction photoelectronics transistor was developed to overcome the limitations of traditional solution-based strategies for preparing multilayer structures. Owing to the ultra-thin and high-quality TIPS-pentacene conductive layer and its excellent interface contact with the underlying film, the composite transistor demonstrated high electrical properties, including high mobility and low subthreshold swing. It exhibited typical synaptic characteristics such as pulsepromotion facilitation (PPF). The device also delivered excellent non-volatile memory characteristics, with multistate memory windows observed under different gate scanning ranges. Based on the strong gate modulation, the photoelectronic transistor array successfully simulated the dark and bright adaptation behaviors of the human visual system. Therefore, the preparation strategy for multifunctional photoelectronic transistors proposed in this work provided an unique perspective for the next generation of artificial neural systems.
Keyword ：
Heterostructure Heterostructure High performance High performance Non-volatile memory Non-volatile memory Small molecule semiconductor Small molecule semiconductor Synapse transistors arrays Synapse transistors arrays Transfer semiconductor film Transfer semiconductor film
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| GB/T 7714 | Zhang, Hui , Yang, Zunxian , Chen, Ye et al. Multifunctional heterojunction synaptic transistors based on transferred organic semiconductor crystals for superior visual adaptation [J]. | ORGANIC ELECTRONICS , 2025 , 144 . |
| MLA | Zhang, Hui et al. "Multifunctional heterojunction synaptic transistors based on transferred organic semiconductor crystals for superior visual adaptation" . | ORGANIC ELECTRONICS 144 (2025) . |
| APA | Zhang, Hui , Yang, Zunxian , Chen, Ye , Wang, Jiaxiang , Hong, Jiajie , Bai, Yuting et al. Multifunctional heterojunction synaptic transistors based on transferred organic semiconductor crystals for superior visual adaptation . | ORGANIC ELECTRONICS , 2025 , 144 . |
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Cadmium selenide (CdSe)-based colloidal quantum dots (QDs) exhibit unique properties such as tunable colors, narrow emission, high photoluminescence efficiency, and high stability, making them one of the most promising candidates for next-generation displays. CdSe-based QD light-emitting diodes (QLEDs) have attracted more and more attention mainly due to their advantages including high electroluminescence brightness, low turn-on voltage, and ultrathin device structures. However, there are still many challenges, mainly including the lattice defects aroused by lattice strain during the QD growth process and the surface defects caused by ligand desorption. CdSe-based QLEDs with high photoelectronic performance were finally achieved in our work just by optimizing the synthesis processes and further reducing defects in QD shells. There was a great decrease in the defect density of the QD shell indirectly according to their testing results in the fluorescence lifetime and single-carrier devices. After the reaction system was diluted with a solvent in the hot-injection method, there was some blue shift in the QD emission observed from 595 to 562 nm. Then, with the ZnSe shell further coated onto the QD, the size of the effective emission center was reduced to some extent, and further, a blue shift in the emission was obtained with the wavelength down to 533 nm. Finally, on the outside of the as-synthesized QDs, the ZnS shell was used to passivate and further protect the ZnSe layer, which greatly increased the average fluorescence lifetime of the CdSe-based QDs from 22.94 to 36.41 ns. Additionally, a layer of lithium fluoride (LiF) with optimized thickness was further deposited onto the QD emitting layer to prevent ligand desorption from ethanol solvent cleaning. Therefore, the CdSe-based QD fluorescence efficiency was greatly improved and the maximum external quantum efficiency (EQE) of 8.06% for our CdSe-based QLEDs was achieved with a LiF layer of 3 nm.
Keyword ：
CdZnSe quantum dots (QDs) CdZnSe quantum dots (QDs) defect state control defect state control LiF film LiF film nucleation control nucleation control QLED QLED
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| GB/T 7714 | Huang, Qiaocan , Yang, Zunxian , Ye, Yuliang et al. Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes [J]. | ACS APPLIED NANO MATERIALS , 2024 , 7 (2) : 1896-1906 . |
| MLA | Huang, Qiaocan et al. "Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes" . | ACS APPLIED NANO MATERIALS 7 . 2 (2024) : 1896-1906 . |
| APA | Huang, Qiaocan , Yang, Zunxian , Ye, Yuliang , Meng, Zongyi , Zeng, Zhiwei , Hong, Hongyi et al. Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes . | ACS APPLIED NANO MATERIALS , 2024 , 7 (2) , 1896-1906 . |
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Domain distribution, defect density as well as carrier transport all exert some great impact on the performance of quasi-two-dimensional (quasi -2D) perovskites light emitting diodes (PeLEDs). Herein, the novelty multifunctional metformin hydrochloride (MFCl) buried passivated layer was introduced to optimize the crystal dynamics, surface morphology, and electro-luminescent properties of the quasi -2D perovskites. On the one hand, MF ion to some extent optimized the domain distribution just by both decreasing the n = 2 phase and increasing the threedimensional (3D) phase, which facilitated the charge funnelling. On the other hand, by combining MFCl with PSS or PSS-Na, the energy level of the hole transport layer was effectively adjusted, resulting in an obvious reduction of the injection barrier. As a result, the MFCl-optimized blue quasi -2D PeLEDs with the maximum external quantum efficiency of 5.22 % was achieved, which is 3.6 times higher than that of the device without the MFCl treatment. This work provided favourable strategy for the performance enhancement of blue quasi -2D PeLEDs, in which a multifunction interface was introduced to synchronously improve the phase distribution as well as the defect passivation of quasi -2D perovskite, meanwhile all of those further promoted the charge transportation.
Keyword ：
Blue emitting device Blue emitting device Multifunctional Interface Multifunctional Interface Oriented Crystallization Oriented Crystallization Quasi-2D Perovskite Quasi-2D Perovskite
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| GB/T 7714 | Ye, Yuliang , Cui, Zhou , Yang, Zunxian et al. A multifunctional interface optimization strategy for efficient Quasi-2D blue perovskite Light-Emitting diodes [J]. | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
| MLA | Ye, Yuliang et al. "A multifunctional interface optimization strategy for efficient Quasi-2D blue perovskite Light-Emitting diodes" . | CHEMICAL ENGINEERING JOURNAL 483 (2024) . |
| APA | Ye, Yuliang , Cui, Zhou , Yang, Zunxian , Zeng, Zhiwei , Meng, Zongyi , Hong, Hongyi et al. A multifunctional interface optimization strategy for efficient Quasi-2D blue perovskite Light-Emitting diodes . | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
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直接存储存取是一种在各个模块间进行大量数据传输的高速度、高效率的传输方式.在CPU对DMA进行初始化配置后,允许DMA作为主机占用总线,直接对外围设备和存储器的数据进行读写,实现外设和存储器、存储器和存储器之间的数据传输,不再需要CPU的干预,可以解放CPU,极大提高数据传输效率.本文旨在基于AHB总线协议的双通道DMA控制器实现外设与存储器之间的数据传输.
Keyword ：
AHB AHB FPGA FPGA SoC SoC Vivado2018 Vivado2018 直接存储存取 直接存储存取
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| GB/T 7714 | 蓝倩婷 , 杨尊先 , 王法翔 . 基于AHB总线的双通道DMA控制器的系统设计 [J]. | 集成电路与嵌入式系统 , 2024 , 24 (4) : 47-50 . |
| MLA | 蓝倩婷 et al. "基于AHB总线的双通道DMA控制器的系统设计" . | 集成电路与嵌入式系统 24 . 4 (2024) : 47-50 . |
| APA | 蓝倩婷 , 杨尊先 , 王法翔 . 基于AHB总线的双通道DMA控制器的系统设计 . | 集成电路与嵌入式系统 , 2024 , 24 (4) , 47-50 . |
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