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学者姓名：林丽华
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Abstract ：
Significance The evolution of display technology is a cornerstone of modern technological advancement, fundamentally transforming how humans interact with machines. This transformation is vividly apparent in human-computer interactions, where the integration of sophisticated display technologies has led to more intuitive and immersive experiences. The global living standard improvement has further fueled expectations for advanced display devices, with consumers seeking higher quality, efficiency, and functionality. The advent of near-eye display technologies such as augmented reality (AR), mixed reality (MR), and virtual reality (VR) has only heightened the demands for high-resolution microdisplays. These emerging technologies require displays that provide not only high resolution but also compactness, energy efficiency, and the ability to reproduce colors accurately and vividly. The current market is dominated by micro-LED technology and recognized for its superior brightness and energy efficiency. However, the production of full-color micro-LEDs poses significant challenges, chiefly in the massive transfer of differently colored LED chips onto a single wafer. This process demands an exceptionally high yield rate, making it both technologically challenging and costly. As a new type of semiconductor nanocrystal materials with quantum confinement effects, quantum dots (QDs) have sparked great interest in the display field due to their unique properties such as tunable bandgaps, high quantum yields, high stability, and potential for cost-effective solution processing. QDs typically adopt a core- shell structure [Fig. 1(a)] and by adjusting the energy levels of the core-shell structure, excitons within the QDs can be confined. Organic ligands on the surface of QD shells provide steric hindrance among the dots, thus preventing aggregation and fluorescence quenching. The physicochemical properties of QDs can be adjusted by changing their organic ligands. Since Alivisatos's research team first reported LEDs with QDs as the electroluminescent layer in 1994, QD display devices have undergone 30 years of research. Additionally, high-resolution display devices using QDs have been realized via various patterning technologies to exhibit excellent device performance and fine pixel patterns. Although high-resolution patterning technology based on QDs has been extensively studied, there is still a lack of comprehensive reviews and summaries of recent work. Therefore, it is significant to summarize existing research and explore future development trends. Progress The current leading high-resolution QD patterning technologies encompass inkjet printing, photolithography, photo-crosslinking, region-selective deposition, transfer printing, and in-situ fabrication. These technologies are thoroughly compared and summarized in their process flows, strengths, and weaknesses, as depicted in Figs. 2, 6, and 8-12. In 2023, the team led by researcher Chen Zhuo from BOE Technology Group Co., Ltd. utilized electrospray inkjet printing for fabricating both bottom-emitting and top-emitting electroluminescent QD devices, achieving a resolution of 500 ppi. In 2020, the team of Xu Xiaoguang at BOE successfully created a 500 ppi full-color passive matrix QD light-emitting device by a sacrificial layer-assisted photolithography method. That same year, Moon Sung Kang and the team at Sogang University in the republic of Korea developed a method for patterning QDs with a photo-driven ligand crosslinking agent, successfully producing full- color QD patterns with a resolution of 1400 ppi. In 2021, Sun Xiaowei and the team at Southern University of Science and Technology achieved a large-area full-color QD thin film with 1000 ppi resolution via selective electrophoretic deposition. In 2019, Hu Binbin at Henan University reported on assembling QD nanoparticles into microstructures via wetting-induced deposition. In 2021, the team led by Chen Shuming at Southern University of Science and Technology built a resonant cavity in white light QD light-emitting devices to achieve full-color patterned QD devices and a QD film patterning resolution of 8465 ppi. In 2015, Taeghwan Hyeon and the team at the Institute for Basic Science in the republic of Korea realized QD light-emitting devices with a resolution of 2460 ppi using gravure transfer printing technology. In 2022, our team collaborated with the team of Qian Lei at the Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, integrated transfer printing with Langmuir-Blodgett film technology to create ultra-high pixel density QD light-emitting devices at 25400 ppi. In 2021, Zhong Haizheng and the team at the Beijing Institute of Technology prepared patterned CsPbI3 QD patterns on substrates via laser direct writing in situ. Conclusions and Prospects As carriers of visual information, display devices play an indispensable role in our daily lives. Emerging as revolutionary materials, QDs have become the ideal choice for next-generation display technologies with their unique properties such as tunable bandgaps, high quantum yields, and stability. Consequently, mastering high-resolution QD patterning is a crucial challenge that should be addressed for QD display devices to make significant strides in the market. In summary, various high-resolution QD patterning technologies require further detailed exploration to advance the applications and development of QD light-emitting devices in high-quality displays.
Keyword ：
display technology display technology high resolution high resolution patterning technology patterning technology quantum dot quantum dot
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| GB/T 7714 | Pan Youjiang , Lin Lihua , Yang Kaiyu et al. Patterning Technology of High-Resolution Quantum Dots [J]. | ACTA OPTICA SINICA , 2024 , 44 (2) . |
| MLA | Pan Youjiang et al. "Patterning Technology of High-Resolution Quantum Dots" . | ACTA OPTICA SINICA 44 . 2 (2024) . |
| APA | Pan Youjiang , Lin Lihua , Yang Kaiyu , Chen Wei , Hu Hailong , Guo Tailiang et al. Patterning Technology of High-Resolution Quantum Dots . | ACTA OPTICA SINICA , 2024 , 44 (2) . |
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Colloidal quantum dot materials have been widely studied for their excellent narrow emission spectra，tunable emission wavelengths，high luminous efficiencies and excellent stability，and their simultaneous solution-pro-cessability has made quantum dot light-emitting diodes（QLEDs）widely applicable and used. However，the inherent substrate mode within the device leads to a large amount of photons in QLED devices being confined internally and not utilized. In this work，a solvent self-infiltration nanoimprinting process is developed based on the traditional nanoimprinting process while utilizing the surface binding energy of polydimethylsiloxane （PDMS） material itself，which has low pressure dependence and simplifies the traditional process flow，and based on which the micro-nanostructured patterns in three sizes of 1. 3，1，0. 5 μm with high periodicity are produced. Micro-nano-structured patterned layers of three sizes were fabricated based on which the red，green and blue QLED devices were out-coupled to realize light extraction. In this case，the brightness of the 1. 3 μm micro-nanostructured coupled green QLED device reaches 715 069 cd·m-2，and the maximum external quantum efficiency（EQE）and current efficiency are enhanced to 12. 5% and 57. 3 cd·A-1. The individual electrical performances of the 1 μm-size-coupled blue QLED device are nearly 200% improvement. The EQE of the 0. 5 μm size-coupled red QLED device is also improved from 17. 3% to 20. 5%. And through the angular distribution test，it is proved that the micro-nano structure does not affect the luminous intensity of QLED devices，which is still close to the Lambertian emission. The solvent self-infiltration nanoimprinting process and QLED light extraction method proposed in this work provide a simple and effective way to improve the performance of QLEDs. © 2024 Editorial Office of Chinese Optics. All rights reserved.
Keyword ：
Angular distribution Angular distribution Binding energy Binding energy Emission spectroscopy Emission spectroscopy Extraction Extraction Luminance Luminance Nanocrystals Nanocrystals Nanoimprint lithography Nanoimprint lithography Organic light emitting diodes (OLED) Organic light emitting diodes (OLED) Polydimethylsiloxane Polydimethylsiloxane Polystyrenes Polystyrenes Quantum efficiency Quantum efficiency Semiconductor quantum dots Semiconductor quantum dots Silicones Silicones
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| GB/T 7714 | Liang, Long , Zheng, Yueting , Lin, Lihua et al. Improving Performance of Quantum Dot Light-emitting Diode with Self-immersed Nanoimprint-coupling [J]. | Chinese Journal of Luminescence , 2024 , 45 (4) : 613-620 . |
| MLA | Liang, Long et al. "Improving Performance of Quantum Dot Light-emitting Diode with Self-immersed Nanoimprint-coupling" . | Chinese Journal of Luminescence 45 . 4 (2024) : 613-620 . |
| APA | Liang, Long , Zheng, Yueting , Lin, Lihua , Hu, Hailong , Li, Fushan . Improving Performance of Quantum Dot Light-emitting Diode with Self-immersed Nanoimprint-coupling . | Chinese Journal of Luminescence , 2024 , 45 (4) , 613-620 . |
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Photosensitive quantum dot light-emitting diodes (PSQLEDs) possess the dual capabilities of generating and detecting light signals, which is of significant importance for the development of miniaturized and integrated optoelectronic devices. However, the state-of-the-art PSQLEDs can only detect light signals within a certain wavelength range, and require switching between the two functions under different bias voltage directions. In this work, The use of a ZnO/quantum dots (QDs)/ZnO multilayer (ZQZ ML) architecture as both the electron transport layer and the photosensitive layer is pioneered. The QDs in this structure are composed of narrow-bandgap lead sulfide QDs and wide-bandgap cadmium selenide QDs, successfully realizing a unique PSQLED device with C photosensitive characteristics. As a result, the as-fabricated device can respond to illumination from 365 to 1300 nm, and the device achieves a photoresponse rate of 20.9 mA W−1 in self-powered mode to UV light. After UV light irradiation, the maximum external quantum efficiency and maximum luminance of device reached 11.8% and 64,549 cd m−2, respectively. The device shows a record-high luminance ON/OFF ratio of 5500%, which is beneficial for high contrast and accurate information display. © 2024 Wiley-VCH GmbH.
Keyword ：
broad-spectrum detection broad-spectrum detection dual-functional dual-functional light-emitting device light-emitting device photosensitive photosensitive quantum dot quantum dot
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| GB/T 7714 | Pan, Y. , Hu, H. , Yang, K. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity [J]. | Advanced Optical Materials , 2024 , 12 (26) . |
| MLA | Pan, Y. et al. "Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity" . | Advanced Optical Materials 12 . 26 (2024) . |
| APA | Pan, Y. , Hu, H. , Yang, K. , Chen, W. , Lin, L. , Guo, T. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity . | Advanced Optical Materials , 2024 , 12 (26) . |
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With tunable emission in the full visible region, the ecofriendly InP quantum dots (QDs) show unique application prospects in light-emitting devices. At present, InP QDs suffer from wide-bandwidth emission, especially for electroluminescence (EL), which hinders their applications in high-performance display devices. Here, we report a facile one-pot synthesis of narrow bandwidth InP/ZnSeS/ZnS QDs using a safe phosphorus source of tris(dimethylamino)phosphine, in which the ZnSeS inner-shell layer is formed via temperature-gradient solution growth from 240 to 280 degrees C. The synthesized green QDs have a high photoluminescence quantum yield (PLQY) of 91% and full width at half maximum (fwhm) of 36 nm. Moreover, the resultant quantum dot light-emitting devices (QLEDs) also show a narrow fwhm of 42 nm, which is the narrowest emission of green InP QLEDs based on a safe phosphorus source reported so far. Further modulation of the electron injection into the device by inserting a thin layer of lithium fluoride results in a peak external quantum efficiency of 5.56%.
Keyword ：
aminophosphine aminophosphine color purity color purity electroluminescence electroluminescence indium phosphide indium phosphide quantum dots quantum dots
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| GB/T 7714 | Zhao, Haobing , Hu, Hailong , Zheng, Jinping et al. One-Pot Synthesis of InP Multishell Quantum Dots for Narrow-Bandwidth Light-Emitting Devices [J]. | ACS APPLIED NANO MATERIALS , 2023 , 6 (5) : 3797-3802 . |
| MLA | Zhao, Haobing et al. "One-Pot Synthesis of InP Multishell Quantum Dots for Narrow-Bandwidth Light-Emitting Devices" . | ACS APPLIED NANO MATERIALS 6 . 5 (2023) : 3797-3802 . |
| APA | Zhao, Haobing , Hu, Hailong , Zheng, Jinping , Qie, Yuan , Yu, Kuibao , Zhu, Yangbin et al. One-Pot Synthesis of InP Multishell Quantum Dots for Narrow-Bandwidth Light-Emitting Devices . | ACS APPLIED NANO MATERIALS , 2023 , 6 (5) , 3797-3802 . |
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InP quantum dots (QDs) are considered to be one of the most promising materials for application in light-emitting devices due to the advantages of heavy-metal-free characteristic and widely tunable spectrum covering most of the visible and near-infrared regions. However, the performance of InP quantum dot light-emitting diodes (QLEDs) lags far behind their Cd-containing counterparts, especially as the InP pixelated de-vice is still in its infancy. In this study, multi-component functional QD inks with excellent stability and print-ability was developed for inkjet printing InP array QLEDs. High-quality QD films can be obtained, both on flat and bank-containing substrates, by precisely controlling the competition between capillary and Marangoni flows in the printed droplets, enabling high device performance. In addition, a periodic ZnO microlens arrays was prepared by nanoimprinting technology to enhance the light extraction efficiency of inkjet-printed InP QLEDs, leading to 127.6% improvement in external quantum efficiency (EQE) compared to the control device. The maximum luminance, EQE and current efficiency of the obtained device are 17,759 cd/m2, 8.1% and 11.1 cd/A, respectively. These results may facilitate the applications of high performance environment-friendly QLEDs by inkjet printing technology.
Keyword ：
Inkjet printing Inkjet printing InP quantum dots InP quantum dots Light extraction Light extraction QLEDs QLEDs
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| GB/T 7714 | Bai, Jieyu , Hu, Hailong , Yu, Yongshen et al. Achieving high performance InP quantum dot light-emitting devices by using inkjet printing [J]. | ORGANIC ELECTRONICS , 2023 , 113 . |
| MLA | Bai, Jieyu et al. "Achieving high performance InP quantum dot light-emitting devices by using inkjet printing" . | ORGANIC ELECTRONICS 113 (2023) . |
| APA | Bai, Jieyu , Hu, Hailong , Yu, Yongshen , Zhu, Yangbin , Xu, Zhongwei , Zheng, Wenchen et al. Achieving high performance InP quantum dot light-emitting devices by using inkjet printing . | ORGANIC ELECTRONICS , 2023 , 113 . |
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Perovskite quantum dots (PQDs) are promising in the fieldof light-emittingdiodes (LEDs) due to their adjustable band gap, high photoluminescencequantum yield, and high color purity. However, ion migration is proneto occur in the device due to the structural instability of PQDs,resulting in the degradation of external quantum efficiency. In thiswork, we proposed a strategy to realize a perovskite quantum dot light-emittingmemcapacitor (PQLEM) so as to enhance the electroluminescent performanceof PQDs. By varying the pre-bias voltage and time, the ion distributionand trap density in the PQD film could be modified, thereby affectingthe capacitance value and luminous efficiency of the device. Underthe memcapacitive effect, the external quantum efficiency (EQE) ofthe device increases from an initial 2.81 to 7.95%. This work providesa route for achieving perovskite quantum dot light-emitting deviceswith high luminous efficiency.
Keyword ：
efficiency efficiency ion migration ion migration light-emitting diodes light-emitting diodes memcapacitive memcapacitive perovskite quantum dots perovskite quantum dots
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| GB/T 7714 | Ju, Songman , Mao, Chaomin , Zheng, Jinping et al. Perovskite Quantum Dot Light-Emitting Memcapacitor [J]. | ACS APPLIED NANO MATERIALS , 2023 , 6 (11) : 9219-9225 . |
| MLA | Ju, Songman et al. "Perovskite Quantum Dot Light-Emitting Memcapacitor" . | ACS APPLIED NANO MATERIALS 6 . 11 (2023) : 9219-9225 . |
| APA | Ju, Songman , Mao, Chaomin , Zheng, Jinping , Yang, Kaiyu , Lin, Lihua , Guo, Tailiang et al. Perovskite Quantum Dot Light-Emitting Memcapacitor . | ACS APPLIED NANO MATERIALS , 2023 , 6 (11) , 9219-9225 . |
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研究离散变量与连续变量系统在纠缠态下的非局域关联性是量子信息处理中的基本理论与应用课题。对于局域隐变量理论的Bell不等式的违背可以很好地体现这些关联。在本文中，我们对量子比特自旋操作与谐振子旋转宇称操作进行联合测量，研究了量子比特与谐振子相干态的纠缠对Bell不等式的影响，并且证明，当量子比特与谐振子之间的纠缠接近最大值时，二者的非局域关联几乎最大限度地违背了Bell不等式。之后通过对Mermin-Klyshko不等式的违背，进一步研究了一个或多个比特与两个谐振子相干态纠缠的系统的非局域关联性。结果表明随着谐振子相干态的振幅增大，非局域性也会快速增强，同时，相干态振幅取值适中，就能使Merm...
Keyword ：
Bell不等式 Bell不等式 Mermin-Klyshko不等式 Mermin-Klyshko不等式 位移宇称 位移宇称 旋转宇称 旋转宇称 混合系统 混合系统 非局域性 非局域性
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| GB/T 7714 | 杨守邦 , 沈利托 , 林丽华 et al. 基于离散与连续变量系统的混合纠缠态的非局域关联性 [J]. | 量子光学学报 , 2022 , 28 (02) : 96-106 . |
| MLA | 杨守邦 et al. "基于离散与连续变量系统的混合纠缠态的非局域关联性" . | 量子光学学报 28 . 02 (2022) : 96-106 . |
| APA | 杨守邦 , 沈利托 , 林丽华 , 杨贞标 , 钟志荣 , 郑仕标 . 基于离散与连续变量系统的混合纠缠态的非局域关联性 . | 量子光学学报 , 2022 , 28 (02) , 96-106 . |
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The magnetic response of hybrid capacitors (HCs) has become an essential topic in practical applications and fundamental research, but because of the complicated contact surface between the electrode and electrolyte, identifying the effect of the morphologies of electrodes on the magnetic response remains challenging. Here, we prepared needle-, weed- and net-like Co3O4 as electrodes to investigate the morphology-dependent HCs properties under a magnetic field (MF). The results showed that the capacity of the needle- and weed-like electrode changes in a range of 5.8 % to -23.2 % and 12.8 % to -5.1 % at a scan rate from 5 to 100 mV/s with a 4000Gs magnetic field, while that of net-like electrode changes from 45.3 % to 41.3 %. The different magnetic response is attributed to the effect of the morphology on electrolyte convection under an external magnetic field. This work favours understanding the magnetic dependence of HCs properties and pushes the practical application of HCs in magnetic environments.
Keyword ：
Co3O4 Co3O4 electrolyte convection electrolyte convection hybrid capacitors hybrid capacitors magnetic response magnetic response morphology morphology
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| GB/T 7714 | Liang, Zhiwei , Tian, Wensheng , Liu, Yuan et al. Preparation of Co3O4 Electrodes with Different Morphologies for the Investigation of Magnetic Response in Hybrid Capacitors [J]. | CHEMELECTROCHEM , 2022 , 9 (9) . |
| MLA | Liang, Zhiwei et al. "Preparation of Co3O4 Electrodes with Different Morphologies for the Investigation of Magnetic Response in Hybrid Capacitors" . | CHEMELECTROCHEM 9 . 9 (2022) . |
| APA | Liang, Zhiwei , Tian, Wensheng , Liu, Yuan , Du, Yuanzhen , Zhang, Wenxin , Lin, Lihua et al. Preparation of Co3O4 Electrodes with Different Morphologies for the Investigation of Magnetic Response in Hybrid Capacitors . | CHEMELECTROCHEM , 2022 , 9 (9) . |
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Zinc oxide (ZnO) is widely used as an electron transport layer (ETL) in quantum dot light-emitting diodes (QLED) because of its advantages of appropriate energy level and the simple process at low temperature. However, its high conductivity and abundant surface defects have become essential factors limiting the development of QLED. Here, we employ sol-gel derived lithium (Li)-doped ZnO (LZO) film as an ETL for inverted red QLED to achieve low-cost and high-efficiency QLED. We show that the conduction band minimum, the density of oxygen defects and conductivity of ZnO can be tuned by Li-doping. Consequently, the red QLED with 3 wt% Li-doped ZnO ETL exhibit maximum external quantum efficiency (EQE) and current efficiency of 16.4% and 24.1 cd/A, respectively, which are about 1.3-fold greater than those of the device with ZnO ETL. The Li-doping in sol-gel derived ZnO provides a feasible strategy for low-cost and high-performance inverted QLEDs.
Keyword ：
Doping Doping Light-emitting diodes Light-emitting diodes Quantum dot Quantum dot Sol-gel Sol-gel ZnO ZnO
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| GB/T 7714 | Jing, Jipeng , Lin, Lihua , Yang, Kaiyu et al. Highly efficient inverted quantum dot light-emitting diodes employing sol-gel derived Li-doped ZnO as electron transport layer [J]. | ORGANIC ELECTRONICS , 2022 , 103 . |
| MLA | Jing, Jipeng et al. "Highly efficient inverted quantum dot light-emitting diodes employing sol-gel derived Li-doped ZnO as electron transport layer" . | ORGANIC ELECTRONICS 103 (2022) . |
| APA | Jing, Jipeng , Lin, Lihua , Yang, Kaiyu , Hu, Hailong , Guo, Tailiang , Li, Fushan . Highly efficient inverted quantum dot light-emitting diodes employing sol-gel derived Li-doped ZnO as electron transport layer . | ORGANIC ELECTRONICS , 2022 , 103 . |
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Interactive display devices integrating multiple functions have become a development trend of display technology. The excellent luminescence properties of perovskite quantum dots (PQDs) make it an ideal luminescent material for the next generation of wide-color gamut displays. Here we design and fabricate dual-function light-sensing/displaying light-emitting devices based on PQDs. The devices can display information as an output port, and simultaneously sense outside light signals as an input port and modulate the display information in a non-contact mode. The dual functions were attributed to the device designs: (1) the hole transport layer in the devices also acts as the light-sensing layer to absorb outside light signals; (2) the introduced hole trapping layer interface can trap holes originating from the light-sensing layer, and thus tune the charge transport properties and the light-emitting intensities. The sensing and display behavior of the device can be further modulated by light signals with different time and space information. This fusion of sensing and display functions has broad prospects in non-contact interactive screens and communication ports.
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| GB/T 7714 | Ju, Songman , Zhu, Yangbin , Hu, Hailong et al. Dual-function perovskite light-emitting/sensing devices for optical interactive display [J]. | LIGHT-SCIENCE & APPLICATIONS , 2022 , 11 (1) . |
| MLA | Ju, Songman et al. "Dual-function perovskite light-emitting/sensing devices for optical interactive display" . | LIGHT-SCIENCE & APPLICATIONS 11 . 1 (2022) . |
| APA | Ju, Songman , Zhu, Yangbin , Hu, Hailong , Liu, Yang , Xu, Zhongwei , Zheng, Jinping et al. Dual-function perovskite light-emitting/sensing devices for optical interactive display . | LIGHT-SCIENCE & APPLICATIONS , 2022 , 11 (1) . |
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