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学者姓名：林立华
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Abstract ：
High-resolution (HR) displays are in much demand as metaverse makes near-eye displays the most important equipment in recent years. Based on wave optics, a microscale optical crosstalk model for HR display devices is proposed. It is indicated that the pixel pattern will be distorted over long-distance transmission in light-emitting devices with inner periodic microstructure, and the optical distortion is related to the size of pixels and the distance from the emitting layer to the outlet. A bottom emissive HR red quantum dot light-emitting diode (QLED) array is introduced to confirm the model and a top emission scheme is provided to effectively reduce the transmission distance and suppress the pixel distortion. Optical-crosstalk-free pixels are finally achieved by adopting the optimized top-emission cathode thickness of 30 nm. This study provides a direction for realizing high-quality and high-resolution micro-displays. The optical distortion is related to the size of pixels and the distance from the emitting layer to the outlet. A top emission scheme is provided to effectively reduce the transmission distance and suppress the pixel distortion. Optical-crosstalk-free pixels are achieved by adopting the optimized top emission cathode thickness of 30 nm. image
Keyword ：
display distortion display distortion high-resolution high-resolution optical crosstalk optical crosstalk QLED QLED
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| GB/T 7714 | Zheng, Yueting , Lin, Lihua , Hu, Hailong et al. Optical Crosstalk Suppression in High-Resolution Quantum Dot Light-Emitting Devices [J]. | ADVANCED OPTICAL MATERIALS , 2024 , 12 (15) . |
| MLA | Zheng, Yueting et al. "Optical Crosstalk Suppression in High-Resolution Quantum Dot Light-Emitting Devices" . | ADVANCED OPTICAL MATERIALS 12 . 15 (2024) . |
| APA | Zheng, Yueting , Lin, Lihua , Hu, Hailong , Guo, Tailiang , Li, Fushan . Optical Crosstalk Suppression in High-Resolution Quantum Dot Light-Emitting Devices . | ADVANCED OPTICAL MATERIALS , 2024 , 12 (15) . |
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With pixel miniaturization, the performance of high-resolution quantum dot light-emitting diodes (QLEDs) usually degrades. Considering the dimension of ultrasmall pixels, herein, a barrier architecture based on localized surface plasmon resonance (LSPR) that promotes the radiative recombination of neighboring quantum dots is rationally designed to improve the device performance. Au nanoparticles (NPs) are embedded in an insulating polymer to form a honeycomb-patterned barrier layer via the nanoimprint process. Each pixel fabricated in the void area (average diameter of 1.5 mu m) of the barrier layer is surrounded by a number of LSPR-NPs to enhance the luminescence. The resultant green QLEDs with a resolution of 9027 pixels per inch show a maximum external quantum efficiency of 11.1%, a 42.8% enhancement compared to the control device. Additionally, the lifetime of high-resolution QLEDs is obviously improved by the LSPR effect.
Keyword ：
Au nanoparticles Au nanoparticles high-resolution high-resolution light-emitting diodes light-emitting diodes localized surfaceplasmon resonance localized surfaceplasmon resonance quantum dot quantum dot
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| GB/T 7714 | Zhang, Xu , Hu, Hailong , Qie, Yuan et al. Boosting the Efficiency of High-Resolution Quantum Dot Light-Emitting Devices Based on Localized Surface Plasmon Resonance [J]. | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (10) : 13219-13224 . |
| MLA | Zhang, Xu et al. "Boosting the Efficiency of High-Resolution Quantum Dot Light-Emitting Devices Based on Localized Surface Plasmon Resonance" . | ACS APPLIED MATERIALS & INTERFACES 16 . 10 (2024) : 13219-13224 . |
| APA | Zhang, Xu , Hu, Hailong , Qie, Yuan , Lin, Lihua , Guo, Tailiang , Li, Fushan . Boosting the Efficiency of High-Resolution Quantum Dot Light-Emitting Devices Based on Localized Surface Plasmon Resonance . | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (10) , 13219-13224 . |
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Abstract ：
由于量子点优异的材料特性，包括可调的能带间隙、高量子产率、高稳定性和可低成本地溶液加工等，其在显示领域引发了浓厚的兴趣和研究热潮。近年来，随着全世界对高质量显示的需求日益增长，特别是随着虚拟/增强现实（VR/AR）等近眼显示技术的兴起，对高亮度、高分辨率、高效率以及低功耗的显示技术提出了更高的要求。本文全面探讨了高分辨率量子点图案化技术，深入解析它们的工艺流程，并详细阐述它们在量子点显示器件中的各种应用。此外，还概述了高分辨率量子点图案化技术在实际应用中所面临的主要挑战。我们认为，要将高分辨率量子点图案化技术真正地应用到实际设备中，必须全面考虑各种因素，不仅包括从图案化技术出发，同时还涉及到从材料选择和器件结构设计等多个角度的深入思考和策划。本综述可为高分辨率量子点图案化技术行业的发展和研究提供有价值的参考。
Keyword ：
图案化技术 图案化技术 显示技术 显示技术 量子点 量子点 高分辨率 高分辨率
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| GB/T 7714 | 潘友江 , 林立华 , 杨开宇 et al. 高分辨率量子点图案化技术 [J]. | 光学学报 , 2024 , 44 (02) : 44-59 . |
| MLA | 潘友江 et al. "高分辨率量子点图案化技术" . | 光学学报 44 . 02 (2024) : 44-59 . |
| APA | 潘友江 , 林立华 , 杨开宇 , 陈伟 , 胡海龙 , 郭太良 et al. 高分辨率量子点图案化技术 . | 光学学报 , 2024 , 44 (02) , 44-59 . |
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钙钛矿量子点(PQD)的喷墨打印技术在全彩显示应用中具有巨大潜力,但一些关键问题仍然影响其发光效率,例如不平衡的载流子注入、低质量的钙钛矿薄膜以及PQD自身的非辐射复合通道等.为解决这些问题,我们引入了界面修饰层苯乙基溴化铵(PEABr)以平衡器件的载流子传输.PEABr与钙钛矿二元溶剂(甲苯、萘)具有相似的结构,可改善PQD的印刷特性和成膜能力,并有效钝化PQD膜的Br-空位和界面缺陷.基于这一策略,成功实现了在414 cd/m²亮度下,最大外量子效率(EQE)达到8.82％、电流效率(CE)达到29.15 cd/A的喷墨打印钙钛矿量子点发光二极管(PeLED),为喷墨打印技术在未来显示领域中的应用提供了有益的思路.
Keyword ：
喷墨打印 喷墨打印 电致发光器件 电致发光器件 界面修饰 界面修饰 钙钛矿量子点 钙钛矿量子点
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| GB/T 7714 | 陈逸群 , 林立华 , 胡海龙 et al. 基于多功能苯乙基溴化铵修饰层的喷墨打印钙钛矿量子点发光二极管 [J]. | 发光学报 , 2024 , 45 (8) : 1343-1353 . |
| MLA | 陈逸群 et al. "基于多功能苯乙基溴化铵修饰层的喷墨打印钙钛矿量子点发光二极管" . | 发光学报 45 . 8 (2024) : 1343-1353 . |
| APA | 陈逸群 , 林立华 , 胡海龙 , 李福山 . 基于多功能苯乙基溴化铵修饰层的喷墨打印钙钛矿量子点发光二极管 . | 发光学报 , 2024 , 45 (8) , 1343-1353 . |
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胶体量子点材料因其优良的窄发射光谱、可调发射波长、高发光效率和优异的稳定性而被广泛研究，且同时具有溶液可加工性使得量子点发光二极管（Quantum dot light-emitting diode, QLED）具有广泛的适用性和应用。然而，器件自身存在的基底模式导致QLED器件大量光子被限制在内部无法利用。本文基于纳米压印工艺同时利用聚二甲基硅氧烷（Polydimethylsiloxane,PDMS）材料本身的表面结合能开发出溶剂自浸润式纳米压印工艺，对压力依赖度低的同时简化了工艺流程，制备出高质量周期性的1.3,1,0.5μm三种尺寸的微纳结构图案层，对红、绿、蓝三色QLED器件进行耦合实现光提取。在这种情况下，1.3μm微纳结构耦合绿光QLED器件亮度达到715 069 cd·m~(-2)，最大外量子效率（External quantum efficiency,EQE）和电流效率分别提升至12.5%和57.3 cd·A~(-1);1μm尺寸耦合的蓝光QLED器件各电学性能提升接近200%;0.5μm尺寸耦合红光QLED器件EQE也从17.3%提升至20.5%。并通过角分布测试，证明微纳结构不会对QLED器件发光强度造成影响，仍然接近朗伯体发射。本工作提出的溶剂自浸润式纳米压印工艺及QLED光提取方法，为QLED的性能提升提供了一条简单有效的途径。
Keyword ：
光学仿真 光学仿真 纳米压印 纳米压印 耦合光学性能 耦合光学性能 量子点发光二极管 量子点发光二极管
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| GB/T 7714 | 梁龙 , 郑悦婷 , 林立华 et al. 自浸润式纳米压印耦合实现量子点发光二极管性能提升 [J]. | 发光学报 , 2024 , 45 (04) : 613-620 . |
| MLA | 梁龙 et al. "自浸润式纳米压印耦合实现量子点发光二极管性能提升" . | 发光学报 45 . 04 (2024) : 613-620 . |
| APA | 梁龙 , 郑悦婷 , 林立华 , 胡海龙 , 李福山 . 自浸润式纳米压印耦合实现量子点发光二极管性能提升 . | 发光学报 , 2024 , 45 (04) , 613-620 . |
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Graphdiyne (GDY), a novel two-dimensional (2D) carbon allotrope featuring sp- and sp2-hybridized carbon, boasts high electron mobility and an intrinsic direct band gap, making it a promising candidate for spin-based semiconductor device applications. However, its inherent nonmagnetism limits its potential in this area. In this study, we demonstrate that dual-doping GDY with fluorine (F) and hydroxyl (OH) groups can induce room-temperature (RT) ferromagnetism, the intensity of which can be modulated by adjusting the levels of F and OH dual-doping. Our experimental results and theoretical analyses reveal several key findings: (i) both dopants preferentially adsorb onto the chain structure of GDY, leading to local magnetic moments; (ii) OH groups deter clustering of F adatoms, thus enhancing magnetic-inducing efficiency; and (iii) these magnetic moments are coupled through superexchange interactions between magnetic 1,2,3-trimethylbenzene motifs. This carefully devised strategy not only facilitates the realization of RT ferromagnetic GDY but also paves the way for the development of GDY-based spintronic devices. This advancement could potentially broaden the scope of applications for this unique 2D material.
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| GB/T 7714 | Lin, Lihua , Ye, Xiaoxue , Pan, Hongzhe et al. Induced Room-Temperature Ferromagnetism in Graphdiyne by a Synergistic Effect of Out-of-Plane F and OH Dual-Doping [J]. | CHEMISTRY OF MATERIALS , 2023 , 35 (22) : 9552-9561 . |
| MLA | Lin, Lihua et al. "Induced Room-Temperature Ferromagnetism in Graphdiyne by a Synergistic Effect of Out-of-Plane F and OH Dual-Doping" . | CHEMISTRY OF MATERIALS 35 . 22 (2023) : 9552-9561 . |
| APA | Lin, Lihua , Ye, Xiaoxue , Pan, Hongzhe , Li, Fushan , Du, Youwei . Induced Room-Temperature Ferromagnetism in Graphdiyne by a Synergistic Effect of Out-of-Plane F and OH Dual-Doping . | CHEMISTRY OF MATERIALS , 2023 , 35 (22) , 9552-9561 . |
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Preparation of high-quality functional films with nanoscale thickness and tunable layers is highly preferable and indispensable for optoelectronic applications, and has drawn enormous attention from research communities. Constructing dense self-assembled monolayer films is an ideal route to realize highly ordered functional films of optoelectronic devices. Moreover, the self-assembly technique can be used to construct elaborated micro/nanoarchitecture for multifunctional and integrated devices by further incorporating patterning methods. A review bridging the controllable-assembled-monolayer technique and functional optoelectronic devices is highly desirable, which would boost the device's performance and even enable emerging applications like ultrahigh-resolution devices. Here we overview the primary mechanism, material systems, transfer methods, and device applications of the controllable-assembled-monolayers. We highlight the high-quality quasi-lattice monolayer films and corresponding potential optoelectronic applications. A systematic review of the controllable-assembled-monolayer technique will help further our understanding of its potential in constructing functional films and optoelectronic devices. Systematic review of the application of controllable assembled LB films in combination with optoelectronic applications.
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| GB/T 7714 | Lin, Heng , Zheng, Yueting , Zhong, Chao et al. Controllable-assembled functional monolayers by the Langmuir-Blodgett technique for optoelectronic applications [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2023 , 12 (4) : 1177-1210 . |
| MLA | Lin, Heng et al. "Controllable-assembled functional monolayers by the Langmuir-Blodgett technique for optoelectronic applications" . | JOURNAL OF MATERIALS CHEMISTRY C 12 . 4 (2023) : 1177-1210 . |
| APA | Lin, Heng , Zheng, Yueting , Zhong, Chao , Lin, Lihua , Yang, Kaiyu , Liu, Yang et al. Controllable-assembled functional monolayers by the Langmuir-Blodgett technique for optoelectronic applications . | JOURNAL OF MATERIALS CHEMISTRY C , 2023 , 12 (4) , 1177-1210 . |
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