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学者姓名：王少昊
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Abstract ：
无片外电容低压差线性稳压器(Low-Dropout Regulator,LDO)具有输出纹波小、集成度高等优势.为了克服仅将运算放大器作为误差放大器(Error Amplifier,EA)时LDO瞬态响应较慢的问题,可在运算放大器后级联多级反相器并增加输出反馈电容来改善EA的响应速度.但是当多级反相器仅采用标准阈值电压晶体管时,该EA方案中的静态功耗较高且在瞬态响应期间晶体管容易进线性区.本文提出一种采用混合阈值两级反相器的无片外电容LDO结构,通过在末级反相器中采用高阈值电压晶体管替代相同尺寸的标准阈值晶体管,能够将静态电流降低 75%的同时仅损失约 20%的瞬态响应性能.此外,设计中还加入了阈值电压修调(Threshold Voltage Modulation,TVM)模块,避免高阈值电压晶体管在瞬态响应过程中关断.本文采用SMIC 55nmCMOS工艺对提出的LDO设计进行了仿真.结果表明,该LDO设计在输入、输出电压分别为1.2 V和1.1 V时,整体静态电流仅10 μA,实现了低功耗性能.当负载电流在 30 ns内发生了 20 mA的跳变时,其输出上冲电压为 36 mV,恢复时间为 36 ns.此外,该LDO的线性和负载调整率分别为 0.17 mV/V和 0.2 μV/mA,低频时电源抑制比为-98 dB.
Keyword ：
低压差线性稳压器 低压差线性稳压器 低静态电流 低静态电流 快速瞬态响应 快速瞬态响应 混合阈值反相器 混合阈值反相器
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| GB/T 7714 | 盛祥和 , 郭少威 , 卢杨 et al. 基于混合阈值反相器的低功耗无片外电容LDO [J]. | 微电子学与计算机 , 2025 , 42 (2) : 120-127 . |
| MLA | 盛祥和 et al. "基于混合阈值反相器的低功耗无片外电容LDO" . | 微电子学与计算机 42 . 2 (2025) : 120-127 . |
| APA | 盛祥和 , 郭少威 , 卢杨 , 陈龙 , 杨业成 , 王少昊 . 基于混合阈值反相器的低功耗无片外电容LDO . | 微电子学与计算机 , 2025 , 42 (2) , 120-127 . |
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随着新一轮科技革命和产业变革的加速演进,特别是 5G、人工智能、物联网、虚拟现实/增强现实和高性能计算等技术的快速发展,集成电路产业已成为全球技术竞争的焦点.作为集成电路设计领域的顶级国际会议,国际固态电路会议(ISSCC)汇聚了全球最前沿的技术成果.本文对近 5 年ISSCC中国内地和港澳地区论文接收情况进行梳理,并对 2024 年研究成果进行深入分析,涵盖作者背景、研究机构、基金支持、合作情况以及研究趋势等.此外,对这些论文的核心内容进行了翻译和整理,旨在为国内集成电路领域的研究人员提供最新的技术洞察,进而激发创新思维,推动产业进步.
Keyword ：
ISSCC ISSCC 技术洞察 技术洞察 研究趋势 研究趋势 集成电路 集成电路
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| GB/T 7714 | 杨业成 , 王少昊 . ISSCC 2024论文技术热点分析 [J]. | 微纳电子与智能制造 , 2024 , 6 (2) : 1-31 . |
| MLA | 杨业成 et al. "ISSCC 2024论文技术热点分析" . | 微纳电子与智能制造 6 . 2 (2024) : 1-31 . |
| APA | 杨业成 , 王少昊 . ISSCC 2024论文技术热点分析 . | 微纳电子与智能制造 , 2024 , 6 (2) , 1-31 . |
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低压差线性稳压器（Low Dropout Regulator,LDO）电路要求低输入输出压差和高电源抑制比（Power Supply Rejection Ratio,PSRR）。本文采用前馈纹波消除电路和负电容电路实现了在低输入输出压差（≤0.2 V）条件下分别对无片外电容高电源抑制比LDO的10 KHz以下频段和1 MHz频带内的电源噪声抑制能力进行提升。此外，提出的方案还通过调整第二级误差放大器的增益，实现了级间电源噪声制约，进一步提升了电源抑制比。本文基于SMIC 55 nm工艺对提出的LDO电路进行了设计与仿真。结果表明，设计的LDO在1.8 V输入电压下可以获得稳定的1.6 V输出电压，输入输出压差≤0.2 V，在1MHz以下频段内PSRR均大于75 dB,10～100 KHz频段的积分噪声为15μVRMS。此外，该LDO还实现1.43 m V/V线性调整率，负载调整率为10μV/mA，总体电路消耗静态电流为76μA。
Keyword ：
前馈纹波消除 前馈纹波消除 无电容型LDO 无电容型LDO 负电容电路 负电容电路 高电源抑制比 高电源抑制比
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| GB/T 7714 | 郭少威 , 盛祥和 , 卢杨 et al. 一种无片外电容高电源抑制比LDO设计 [J]. | 中国集成电路 , 2024 , 33 (05) : 28-33,78 . |
| MLA | 郭少威 et al. "一种无片外电容高电源抑制比LDO设计" . | 中国集成电路 33 . 05 (2024) : 28-33,78 . |
| APA | 郭少威 , 盛祥和 , 卢杨 , 王少昊 . 一种无片外电容高电源抑制比LDO设计 . | 中国集成电路 , 2024 , 33 (05) , 28-33,78 . |
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The rising of big data and artificial intelligence applications requires embedded memory with higher density, lower power consumption, and wider bandwidth. Embedded dynamic random-access memory (eDRAM) are one of the promising embedded memory technologies. Recent advances in thin-film amorphous oxide semiconductor field-effect transistors (AOSFET) have enabled two-transistor-zero-capacitor (2TOC) gain cell eDRAMs to have three-dimensional integration capability and ultra-long retention time. However, 2TOC gain cell eDRAMs are still facing read accuracy challenges. In this paper, we explored the statistical distribution characteristics of storage node (SN) charges during the retention and read phases by conducting perturbation analysis on the 2TOC GC eDRAM. Furthermore, we proposed a retention channel model and a read channel model for the 2TOC GC eDRAM. The Monte Carlo circuit simulation results indicate that both the retention channel and read channel can well describe the statistical properties of retention errors and read errors in the 2TOC GC eDRAM. Both channel models can be used to enhance the overall reliability of the GC eDRAM. © 2024 IEEE.
Keyword ：
Channel modeling Channel modeling eDRAM eDRAM Gain cell Gain cell
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| GB/T 7714 | Ting, Xu, Y. , Zheng, X.B. , Wang, S.H. . Channel Modeling for 2TOC Gain-Cell eDRAM [未知]. |
| MLA | Ting, Xu, Y. et al. "Channel Modeling for 2TOC Gain-Cell eDRAM" [未知]. |
| APA | Ting, Xu, Y. , Zheng, X.B. , Wang, S.H. . Channel Modeling for 2TOC Gain-Cell eDRAM [未知]. |
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近年来，数据密集型应用对存储器的存储密度和功耗等性能提出了更高的要求。传统的嵌入式缓存采用6T-SRAM和1T1C-eDRAM技术难以提升存储密度，且存在较高的背景功率。其中，6T-SRAM的背景功率主要来自晶体管的高泄漏电流，1T1C-eDRAM则主要来自刷新功耗。非晶氧化物半导体(AOSFET)因其极低的泄漏电流和三维集成潜力备受关注。(AOSFET)2T0C-eDRAM是下一代嵌入式缓存技术的有力竞争者。针对当前缺乏功耗分析方法的现状，本文建立了2T0C-eDRAM的读写功耗、刷新功率和泄漏功率模型，并将其集成到定制化NVSim模块中，实现了对AOSFET 2T0C-eDRAM存储系统的功耗分析。仿真结果表明，在大容量存储阵列中，AOSFET 2T0C-eDRAM的读写功耗会略低于6T-SRAM、1T1C-eDRAM和硅基 2T0C-eDRAM，其背景功率(刷新功率和泄漏功率)仅为6T-SRAM的1/6，1T1C-eDRAM的1/10，硅基 2T0C-eDRAM的1/10。
Keyword ：
2T0C GC-eDRAM 2T0C GC-eDRAM AOSFET AOSFET 仿真方法 仿真方法 功耗 功耗 存储系统 存储系统
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| GB/T 7714 | 李伟 , 陈龙 , 杨业成 et al. 面向AOSFET增益单元的存储系统功耗分析研究 [J]. | 电子制作 , 2024 , 32 (14) : 36-39,10 . |
| MLA | 李伟 et al. "面向AOSFET增益单元的存储系统功耗分析研究" . | 电子制作 32 . 14 (2024) : 36-39,10 . |
| APA | 李伟 , 陈龙 , 杨业成 , 郑凌丰 , 王少昊 . 面向AOSFET增益单元的存储系统功耗分析研究 . | 电子制作 , 2024 , 32 (14) , 36-39,10 . |
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受隧道磁阻比（Tunnel Magneto Resistance, TMR）下降、工艺偏差和热波动等因素影响，先进工艺节点（亚25 nm）下的自旋转移力矩磁随机存储器（Spin Transfer Torque Magnetoresistive Random Access Memory, STT-MRAM）的读取裕度降低，读写正确率下降。纠错码（Error Correction Codes, ECC）技术方案能有效提升STT-MRAM读取可靠性。但是，常见的一位硬判决量化器无法发挥多位量化软判决ECC编解码算法的优势，而基于模数转换器的软判决量化器在实现上又要以牺牲面积和功耗为代价。提出的面向STT-MRAM的两位量化器采用全裕度灵敏放大器（Sensitive Amplifier, SA）和电阻量化判决门限，显著降低了量化器的电路复杂度和读写错误率。结果表明，在TMR和低读取裕度条件下，基于提出的两位量化器和极化码（Polar）编码的ECC算法能实现优于基于一位量化器的里德-索洛蒙博斯-乔赫里-霍克文黑姆码（Bose, Chaudhuri&Hocquenghem, BCH）编解码方案的输出帧错误率（Frame Error Rate, FER）。此外，本文提出在STT-MRAM级联信道模型中考虑实际SA引入的读判据错误，用于准确评估读取裕度对读正确率造成的影响。结果表明，基于全裕度SA的两位电阻量化方案能够显著提升判决器的有效读取裕度，减小SA引入的读判据错误，在TMR≤90%时，实现比采用一位硬判决量化器的BCH码平均低47%的输出FER。
Keyword ：
信道模型 信道模型 信道量化器 信道量化器 灵敏放大器 灵敏放大器 纠错编码 纠错编码 自旋转移力矩磁随机存储器 自旋转移力矩磁随机存储器
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| GB/T 7714 | 赖怡桐 , 唐慧琴 , 陈平平 et al. 基于全裕度SA的高读可靠性STT-MRAM两位量化器设计 [J]. | 微电子学与计算机 , 2024 , (02) : 108-114 . |
| MLA | 赖怡桐 et al. "基于全裕度SA的高读可靠性STT-MRAM两位量化器设计" . | 微电子学与计算机 02 (2024) : 108-114 . |
| APA | 赖怡桐 , 唐慧琴 , 陈平平 , 王少昊 . 基于全裕度SA的高读可靠性STT-MRAM两位量化器设计 . | 微电子学与计算机 , 2024 , (02) , 108-114 . |
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Magnetic random-access memory (MRAM)-based computing-in-memory (CIM) schemes can be divided into write-based CIM and read-based CIM. Compared with read-based CIM, the write-based CIM can perform more operations such as AND, OR, majority (MAJ) gate, and full adder (FA). However, write-based CIM schemes require a large number of memory cells and multiple processing cycles. In this paper, we proposed a compact write-based CIM scheme by using a one transistor one high-speed switch magnetic tunnel junction (IT-IHSS-MTJ) memory cell to implement NAND, NOR, XOR, and MAJ gates within two write cycles and one read cycle. Moreover, we also demonstrated that FA operation can also be performed using three 1 T-IHSS-MTJ cells within six cycles. According to the simulation results performed using the SMIC 40 nm CMOS process and the HSS-MTJ SPICE model, we have demonstrated that these logic functions can be achieved. When compared to the write-based CIM using SOT-MRAM, the proposed CIM requires fewer cells and shorter latency to achieve the same logic operations. © 2024 IEEE.
Keyword ：
computing-in-memory computing-in-memory full adder full adder magnetic RAM magnetic RAM non-volatile memory non-volatile memory
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| GB/T 7714 | Lu, Y. , Wang, Z.Y. , Yang, Y.C. et al. Compact Write-Based Computing-in-Memory (CIM) Using High Speed Switching (HSS) MRAM [未知]. |
| MLA | Lu, Y. et al. "Compact Write-Based Computing-in-Memory (CIM) Using High Speed Switching (HSS) MRAM" [未知]. |
| APA | Lu, Y. , Wang, Z.Y. , Yang, Y.C. , Wang, S.H. . Compact Write-Based Computing-in-Memory (CIM) Using High Speed Switching (HSS) MRAM [未知]. |
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Short-channel-length thin-film amorphous oxide semiconductor field-effect transistor (AOSFET) two-transistor zero-capacitor (2TOC) gain cell (GC) memories are one of the promising technologies for three-dimensional integrated memories. 2TOC with a high-threshold voltage write transistor and a low-threshold voltage read transistor can achieve tens of thousands of seconds of retention time and low power consumption. However, the low threshold voltage of the read transistor leads to an increasing leakage current from the unselected data cells, which reduces the read margin. In this paper, we propose using a pre-charge sense amplifier (PCSA) to reduce leakage current and enhance the read margin. A reference generation circuit is also proposed to enhance the read accuracy. The simulation results show that the proposed PCSA increases the read margin to 168 mV. For the large array with 128 memory cells in a column, a 90 mV read margin can still be achieved compared to the 55 mV in the conventional SA setup. © 2024 IEEE.
Keyword ：
amorphous oxide semiconductor amorphous oxide semiconductor Gain-cell DRAM Gain-cell DRAM Sense amplifier Sense amplifier
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| GB/T 7714 | Zhu, Z.J. , Yang, Y.C. , Zheng, L.F. et al. ReadMagin Enhanced PCSA for AOSFET 2TOC Gain Cell Memory [未知]. |
| MLA | Zhu, Z.J. et al. "ReadMagin Enhanced PCSA for AOSFET 2TOC Gain Cell Memory" [未知]. |
| APA | Zhu, Z.J. , Yang, Y.C. , Zheng, L.F. , Wang, S.H. . ReadMagin Enhanced PCSA for AOSFET 2TOC Gain Cell Memory [未知]. |
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Chiral noncollinear magnetic nanostructures, such as skyrmions, are intriguing spin configurations with significant potential for magnetic memory technologies. However, the limited availability of 2D magnetic materials that host skyrmions with Curie temperatures above room temperature presents a major challenge for practical implementation. Chromium tellurides exhibit diverse spin configurations and remarkable stability under ambient conditions, making them a promising platform for fundamental spin physics research and the development of innovative 2D spintronic devices. Here, domain structures of Cr0.85Te nanoflakes synthesized via chemical vapor deposition are investigated, using magnetic force microscopy at room temperature. The results reveal that the domain width of the as-grown nanoflakes scales with the square root of their thicknesses. Notably, the emergence and annihilation of skyrmions are observed, which can be reversibly controlled by external magnetic fields and thermal excitation in ambient air. Micromagnetic simulations suggest that the emergence of skyrmions in Cr0.85Te nanoflakes arises from inversion symmetry breaking due to compositional gradients across the sample thickness, rather than the interfacial Dzyaloshinskii-Moriya interaction. These findings provide new insights into the mechanisms underlying skyrmion formation in 2D ferromagnets and open exciting possibilities for manipulating domain structures at room temperature, offering practical pathways for developing next-generation spintronic devices.
Keyword ：
Cr0.85Te nanoflakes Cr0.85Te nanoflakes magnetic domain evolution magnetic domain evolution magnetic force microscopy magnetic force microscopy room temperature 2D ferromagnetic room temperature 2D ferromagnetic skyrmions skyrmions
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| GB/T 7714 | Ni, Yan , Guo, Yongxiang , Jiang, Yuan-Yuan et al. Emergent Skyrmions in Cr0.85Te nanoflakes at Room Temperature [J]. | SMALL , 2024 . |
| MLA | Ni, Yan et al. "Emergent Skyrmions in Cr0.85Te nanoflakes at Room Temperature" . | SMALL (2024) . |
| APA | Ni, Yan , Guo, Yongxiang , Jiang, Yuan-Yuan , Huang, Ting , Mu, Qiuxuan , Hou, Feiyan et al. Emergent Skyrmions in Cr0.85Te nanoflakes at Room Temperature . | SMALL , 2024 . |
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低压差线性稳压器（LDO）具有低功耗、瞬态响应性能好、电源噪声抑制比高、结构简单等优势，被广泛地应用在物联网、生物医疗、便携式设备等领域。无片外负载电容型LDO无需外接大容量负载电容，易于片上集成，是当前LDO技术发展的主要方向之一。但是，随着等效电容的减小，无片外电容型LDO在设计上难以同时满足低静态电流和高瞬态响应的要求。本文基于低静态电流优先的设计思路，采用SMIC 180 nm CMOS工艺设计了一种具有双向动态偏置推挽级误差放大器的瞬态增强型无片外电容LDO，仅需微安级的静态电流即可实现高压摆率并足以驱动调整管。在此基础上，该LDO采用基于衬底偏置效应的瞬态增强电路，在无需消耗额外功率和引入旁路电容的同时，进一步降低了输出端过冲电压幅度，在实现低功耗的同时提升了整体瞬态响应性能。仿真结果表明，设计的LDO在1.2 V电源电压下可以获得稳定的1 V输出，在1 kHz下，其电源抑制比达到了-72 dB；当负载电流在50μA～100 m A区间时可实现1.69μA的静态电流、0.019 mA/mV的负载调整率、2.5μs的恢复时间和小于200 mV的过冲电压。
Keyword ：
低静态电流 低静态电流 无电容型LDO 无电容型LDO 瞬态增强 瞬态增强
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| GB/T 7714 | 罗伟淞 , 朱梓杰 , 卢杨 et al. 一种低静态电流瞬态增强型无片外电容LDO [J]. | 中国集成电路 , 2023 , 32 (04) : 66-72 . |
| MLA | 罗伟淞 et al. "一种低静态电流瞬态增强型无片外电容LDO" . | 中国集成电路 32 . 04 (2023) : 66-72 . |
| APA | 罗伟淞 , 朱梓杰 , 卢杨 , 王少昊 . 一种低静态电流瞬态增强型无片外电容LDO . | 中国集成电路 , 2023 , 32 (04) , 66-72 . |
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