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学者姓名：王少昊
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Abstract ：
低压差线性稳压器（Low Dropout Regulator,LDO）电路要求低输入输出压差和高电源抑制比（Power Supply Rejection Ratio,PSRR）。本文采用前馈纹波消除电路和负电容电路实现了在低输入输出压差（≤0.2 V）条件下分别对无片外电容高电源抑制比LDO的10 KHz以下频段和1 MHz频带内的电源噪声抑制能力进行提升。此外，提出的方案还通过调整第二级误差放大器的增益，实现了级间电源噪声制约，进一步提升了电源抑制比。本文基于SMIC 55 nm工艺对提出的LDO电路进行了设计与仿真。结果表明，设计的LDO在1.8 V输入电压下可以获得稳定的1.6 V输出电压，输入输出压差≤0.2 V，在1MHz以下频段内PSRR均大于75 dB,10～100 KHz频段的积分噪声为15μVRMS。此外，该LDO还实现1.43 m V/V线性调整率，负载调整率为10μV/mA，总体电路消耗静态电流为76μA。
Keyword ：
前馈纹波消除 前馈纹波消除 无电容型LDO 无电容型LDO 负电容电路 负电容电路 高电源抑制比 高电源抑制比
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| GB/T 7714 | 郭少威 , 盛祥和 , 卢杨 et al. 一种无片外电容高电源抑制比LDO设计 [J]. | 中国集成电路 , 2024 , 33 (05) : 28-33,78 . |
| MLA | 郭少威 et al. "一种无片外电容高电源抑制比LDO设计" . | 中国集成电路 33 . 05 (2024) : 28-33,78 . |
| APA | 郭少威 , 盛祥和 , 卢杨 , 王少昊 . 一种无片外电容高电源抑制比LDO设计 . | 中国集成电路 , 2024 , 33 (05) , 28-33,78 . |
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受隧道磁阻比（Tunnel Magneto Resistance, TMR）下降、工艺偏差和热波动等因素影响，先进工艺节点（亚25 nm）下的自旋转移力矩磁随机存储器（Spin Transfer Torque Magnetoresistive Random Access Memory, STT-MRAM）的读取裕度降低，读写正确率下降。纠错码（Error Correction Codes, ECC）技术方案能有效提升STT-MRAM读取可靠性。但是，常见的一位硬判决量化器无法发挥多位量化软判决ECC编解码算法的优势，而基于模数转换器的软判决量化器在实现上又要以牺牲面积和功耗为代价。提出的面向STT-MRAM的两位量化器采用全裕度灵敏放大器（Sensitive Amplifier, SA）和电阻量化判决门限，显著降低了量化器的电路复杂度和读写错误率。结果表明，在TMR和低读取裕度条件下，基于提出的两位量化器和极化码（Polar）编码的ECC算法能实现优于基于一位量化器的里德-索洛蒙博斯-乔赫里-霍克文黑姆码（Bose, Chaudhuri&Hocquenghem, BCH）编解码方案的输出帧错误率（Frame Error Rate, FER）。此外，本文提出在STT-MRAM级联信道模型中考虑实际SA引入的读判据错误，用于准确评估读取裕度对读正确率造成的影响。结果表明，基于全裕度SA的两位电阻量化方案能够显著提升判决器的有效读取裕度，减小SA引入的读判据错误，在TMR≤90%时，实现比采用一位硬判决量化器的BCH码平均低47%的输出FER。
Keyword ：
信道模型 信道模型 信道量化器 信道量化器 灵敏放大器 灵敏放大器 纠错编码 纠错编码 自旋转移力矩磁随机存储器 自旋转移力矩磁随机存储器
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| GB/T 7714 | 赖怡桐 , 唐慧琴 , 陈平平 et al. 基于全裕度SA的高读可靠性STT-MRAM两位量化器设计 [J]. | 微电子学与计算机 , 2024 , (02) : 108-114 . |
| MLA | 赖怡桐 et al. "基于全裕度SA的高读可靠性STT-MRAM两位量化器设计" . | 微电子学与计算机 02 (2024) : 108-114 . |
| APA | 赖怡桐 , 唐慧琴 , 陈平平 , 王少昊 . 基于全裕度SA的高读可靠性STT-MRAM两位量化器设计 . | 微电子学与计算机 , 2024 , (02) , 108-114 . |
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Magnetic random-access memory (MRAM)-based computing-in-memory (CIM) schemes can be divided into write-based CIM and read-based CIM. Compared with read-based CIM, the write-based CIM can perform more operations such as AND, OR, majority (MAJ) gate, and full adder (FA). However, write-based CIM schemes require a large number of memory cells and multiple processing cycles. In this paper, we proposed a compact write-based CIM scheme by using a one transistor one high-speed switch magnetic tunnel junction (IT-IHSS-MTJ) memory cell to implement NAND, NOR, XOR, and MAJ gates within two write cycles and one read cycle. Moreover, we also demonstrated that FA operation can also be performed using three 1 T-IHSS-MTJ cells within six cycles. According to the simulation results performed using the SMIC 40 nm CMOS process and the HSS-MTJ SPICE model, we have demonstrated that these logic functions can be achieved. When compared to the write-based CIM using SOT-MRAM, the proposed CIM requires fewer cells and shorter latency to achieve the same logic operations. © 2024 IEEE.
Keyword ：
computing-in-memory computing-in-memory full adder full adder magnetic RAM magnetic RAM non-volatile memory non-volatile memory
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| GB/T 7714 | Lu, Y. , Wang, Z.Y. , Yang, Y.C. et al. Compact Write-Based Computing-in-Memory (CIM) Using High Speed Switching (HSS) MRAM [未知]. |
| MLA | Lu, Y. et al. "Compact Write-Based Computing-in-Memory (CIM) Using High Speed Switching (HSS) MRAM" [未知]. |
| APA | Lu, Y. , Wang, Z.Y. , Yang, Y.C. , Wang, S.H. . Compact Write-Based Computing-in-Memory (CIM) Using High Speed Switching (HSS) MRAM [未知]. |
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近年来，数据密集型应用对存储器的存储密度和功耗等性能提出了更高的要求。传统的嵌入式缓存采用6T-SRAM和1T1C-eDRAM技术难以提升存储密度，且存在较高的背景功率。其中，6T-SRAM的背景功率主要来自晶体管的高泄漏电流，1T1C-eDRAM则主要来自刷新功耗。非晶氧化物半导体(AOSFET)因其极低的泄漏电流和三维集成潜力备受关注。(AOSFET)2T0C-eDRAM是下一代嵌入式缓存技术的有力竞争者。针对当前缺乏功耗分析方法的现状，本文建立了2T0C-eDRAM的读写功耗、刷新功率和泄漏功率模型，并将其集成到定制化NVSim模块中，实现了对AOSFET 2T0C-eDRAM存储系统的功耗分析。仿真结果表明，在大容量存储阵列中，AOSFET 2T0C-eDRAM的读写功耗会略低于6T-SRAM、1T1C-eDRAM和硅基 2T0C-eDRAM，其背景功率(刷新功率和泄漏功率)仅为6T-SRAM的1/6，1T1C-eDRAM的1/10，硅基 2T0C-eDRAM的1/10。
Keyword ：
2T0C GC-eDRAM 2T0C GC-eDRAM AOSFET AOSFET 仿真方法 仿真方法 功耗 功耗 存储系统 存储系统
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| GB/T 7714 | 李伟 , 陈龙 , 杨业成 et al. 面向AOSFET增益单元的存储系统功耗分析研究 [J]. | 电子制作 , 2024 , 32 (14) : 36-39,10 . |
| MLA | 李伟 et al. "面向AOSFET增益单元的存储系统功耗分析研究" . | 电子制作 32 . 14 (2024) : 36-39,10 . |
| APA | 李伟 , 陈龙 , 杨业成 , 郑凌丰 , 王少昊 . 面向AOSFET增益单元的存储系统功耗分析研究 . | 电子制作 , 2024 , 32 (14) , 36-39,10 . |
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The rising of big data and artificial intelligence applications requires embedded memory with higher density, lower power consumption, and wider bandwidth. Embedded dynamic random-access memory (eDRAM) are one of the promising embedded memory technologies. Recent advances in thin-film amorphous oxide semiconductor field-effect transistors (AOSFET) have enabled two-transistor-zero-capacitor (2TOC) gain cell eDRAMs to have three-dimensional integration capability and ultra-long retention time. However, 2TOC gain cell eDRAMs are still facing read accuracy challenges. In this paper, we explored the statistical distribution characteristics of storage node (SN) charges during the retention and read phases by conducting perturbation analysis on the 2TOC GC eDRAM. Furthermore, we proposed a retention channel model and a read channel model for the 2TOC GC eDRAM. The Monte Carlo circuit simulation results indicate that both the retention channel and read channel can well describe the statistical properties of retention errors and read errors in the 2TOC GC eDRAM. Both channel models can be used to enhance the overall reliability of the GC eDRAM. © 2024 IEEE.
Keyword ：
Channel modeling Channel modeling eDRAM eDRAM Gain cell Gain cell
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| GB/T 7714 | Ting, Xu, Y. , Zheng, X.B. , Wang, S.H. . Channel Modeling for 2TOC Gain-Cell eDRAM [未知]. |
| MLA | Ting, Xu, Y. et al. "Channel Modeling for 2TOC Gain-Cell eDRAM" [未知]. |
| APA | Ting, Xu, Y. , Zheng, X.B. , Wang, S.H. . Channel Modeling for 2TOC Gain-Cell eDRAM [未知]. |
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This paper proposes a medium access control (MAC) protocol based on deep reinforcement learning (DRL), i.e., multi-channel transmit deep-reinforcement learning multi-channel access (MCT-DLMA) in heterogeneous wireless networks (HetNets). The work concerns practical unsaturated channel traffic that arrives following a Poisson distribution instead of saturated traffic that arrives before.By learning the access mode from historical information, MCT-DLMA can well fill the spectrum holes in the communication of existing users. In particular, it enables the cognitive user to multi-channel transmit at a time, e.g., via the multi-carrier technology. Thus, the spectrum resource can be fully utilized, and the sum throughput of the HetNet is maximized. Simulation results show that the proposed algorithm provides a much higher throughput than the conventional schemes, i.e., the whittle index policy and the DLMA algorithms for both the saturated and unsaturated traffic, respectively. In addition, it also achieves a near-optimal result in dynamic environments with changing primary users, which proves the enhanced robustness to time-varying communications.
Keyword ：
deep reinforcement learning deep reinforcement learning heterogeneous network heterogeneous network MAC protocol MAC protocol spectrum hole spectrum hole
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| GB/T 7714 | Zhang, Xu , Chen, Pingping , Yu, Genjian et al. Deep Reinforcement Learning Heterogeneous Channels for Poisson Multiple Access [J]. | MATHEMATICS , 2023 , 11 (4) . |
| MLA | Zhang, Xu et al. "Deep Reinforcement Learning Heterogeneous Channels for Poisson Multiple Access" . | MATHEMATICS 11 . 4 (2023) . |
| APA | Zhang, Xu , Chen, Pingping , Yu, Genjian , Wang, Shaohao . Deep Reinforcement Learning Heterogeneous Channels for Poisson Multiple Access . | MATHEMATICS , 2023 , 11 (4) . |
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低压差线性稳压器（LDO）具有低功耗、瞬态响应性能好、电源噪声抑制比高、结构简单等优势，被广泛地应用在物联网、生物医疗、便携式设备等领域。无片外负载电容型LDO无需外接大容量负载电容，易于片上集成，是当前LDO技术发展的主要方向之一。但是，随着等效电容的减小，无片外电容型LDO在设计上难以同时满足低静态电流和高瞬态响应的要求。本文基于低静态电流优先的设计思路，采用SMIC 180 nm CMOS工艺设计了一种具有双向动态偏置推挽级误差放大器的瞬态增强型无片外电容LDO，仅需微安级的静态电流即可实现高压摆率并足以驱动调整管。在此基础上，该LDO采用基于衬底偏置效应的瞬态增强电路，在无需消耗额外功率和引入旁路电容的同时，进一步降低了输出端过冲电压幅度，在实现低功耗的同时提升了整体瞬态响应性能。仿真结果表明，设计的LDO在1.2 V电源电压下可以获得稳定的1 V输出，在1 kHz下，其电源抑制比达到了-72 dB；当负载电流在50μA～100 m A区间时可实现1.69μA的静态电流、0.019 mA/mV的负载调整率、2.5μs的恢复时间和小于200 mV的过冲电压。
Keyword ：
低静态电流 低静态电流 无电容型LDO 无电容型LDO 瞬态增强 瞬态增强
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| GB/T 7714 | 罗伟淞 , 朱梓杰 , 卢杨 et al. 一种低静态电流瞬态增强型无片外电容LDO [J]. | 中国集成电路 , 2023 , 32 (04) : 66-72 . |
| MLA | 罗伟淞 et al. "一种低静态电流瞬态增强型无片外电容LDO" . | 中国集成电路 32 . 04 (2023) : 66-72 . |
| APA | 罗伟淞 , 朱梓杰 , 卢杨 , 王少昊 . 一种低静态电流瞬态增强型无片外电容LDO . | 中国集成电路 , 2023 , 32 (04) , 66-72 . |
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A broadband and CMOS-compatible polarization beam splitter and rotator (PSR) built on the silicon nitride -on-silicon multilayer platform is presented. The PSR is realized by cascading a polarization beam splitter and a polarization rotator, which are both subtly constructed with an asymmetrical directional coupler waveguide struc-ture. The advantage of this device is that the function of PSR can be directly realized in the SiN layer, providing a promising solution to the polarization diversity schemes in SiN photonic circuits. The chip is expected to have high power handling capability as the light is input from the SiN waveguide. The use of silicon dioxide as the upper cladding of the device ensures its compatibility with the metal back-end-of-line process. By optimizing the struc-ture parameters, a polarization conversion loss lower than 1 dB and cross talk larger than 27.6 dB can be obtained for TM-TE mode conversion over a wavelength range of 1450 to 1600 nm. For TE mode, the insertion loss is lower than 0.26 dB and cross talk is larger than 25.3 dB over the same wavelength range. The proposed device has good potential in diversifying the functionalities of the multilayer photonic chip with high integration density.(c) 2023 Optica Publishing Group
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| GB/T 7714 | Wang, Linghua , Peng, Hejie , Zheng, Langteng et al. Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform [J]. | APPLIED OPTICS , 2023 , 62 (4) : 1046-1056 . |
| MLA | Wang, Linghua et al. "Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform" . | APPLIED OPTICS 62 . 4 (2023) : 1046-1056 . |
| APA | Wang, Linghua , Peng, Hejie , Zheng, Langteng , Chen, Huaixi , Zhang, Yazhen , Huang, Jiwei et al. Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform . | APPLIED OPTICS , 2023 , 62 (4) , 1046-1056 . |
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针对SoC中电源管理模块对高功能一面积比和高瞬态响应的需求,本文提出一种基于翻转电压跟随器(FVF)的无片外电容低压差线性稳压器(LDO),采用电压峰值检测技术实现动态电流偏置,进而提升系统瞬态响应.基于SMIC 40nm工艺的仿真结果表明,在典型负载切换状态下,提出方案的下冲和上冲恢复时间相比传统的FVF结构LDO电路分别缩短了 75％和29％.
Keyword ：
无片外电容LDO 无片外电容LDO 线性稳压器 线性稳压器 翻转电压跟随器 翻转电压跟随器 高瞬态响应 高瞬态响应
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| GB/T 7714 | 陈俊杰 , 袁磊 , 陈子杰 et al. 一种无片外电容高瞬态响应LDO设计 [J]. | 中国集成电路 , 2023 , 32 (3) : 26-30,64 . |
| MLA | 陈俊杰 et al. "一种无片外电容高瞬态响应LDO设计" . | 中国集成电路 32 . 3 (2023) : 26-30,64 . |
| APA | 陈俊杰 , 袁磊 , 陈子杰 , 王少昊 . 一种无片外电容高瞬态响应LDO设计 . | 中国集成电路 , 2023 , 32 (3) , 26-30,64 . |
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Taking inspiration from the human eye's information processing capabilities, the artificial optoelectronic neuronic device (AOEND) offers a promising approach to creating a bionic eye that performs real-time, low -power processing by integrating optical sensors, signal processing, and electronic neurons into a single device. Despite significant advancements, the current AOEND still faces challenges in terms of power consumption, flexibility, bio-compatibility, and, most importantly, achieving photo-sensitivity across the same broadband perceivable wavelength range (380nm to 740nm) as the human eye. In this study, we present a commercially ready, dual-gated thin-film-transistor (TFT)-based AOEND. Our device exhibits exceptional photo-response to specific wavelengths by utilizing an organic TIPS-pentacene material as the channel layer and intentionally tailoring its optical bandgap to approximately 1.6eV. Additionally, the device successfully replicates various photon-triggered synaptic characteristics and performs visual sensing, memory processing, and other functions with low power consumption. Our findings present a viable strategy for the development of future integrated sensing-memory-processing flexible devices for optoelectronic artificial retina perception applications.
Keyword ：
All -organic phototransistor All -organic phototransistor Bionic eyes Bionic eyes Broadband vision Broadband vision Optoelectronic neuronic device Optoelectronic neuronic device Tips-pentacene Tips-pentacene
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| GB/T 7714 | Zhang, Haizhong , Ju, Xin , Chi, Dongzhi et al. A neuromorphic bionic eye with broadband vision and biocompatibility using TIPS-pentacene-based phototransistor array retina [J]. | APPLIED MATERIALS TODAY , 2023 , 33 . |
| MLA | Zhang, Haizhong et al. "A neuromorphic bionic eye with broadband vision and biocompatibility using TIPS-pentacene-based phototransistor array retina" . | APPLIED MATERIALS TODAY 33 (2023) . |
| APA | Zhang, Haizhong , Ju, Xin , Chi, Dongzhi , Feng, Linrun , Liu, Zhe , Yew, Kwangsing et al. A neuromorphic bionic eye with broadband vision and biocompatibility using TIPS-pentacene-based phototransistor array retina . | APPLIED MATERIALS TODAY , 2023 , 33 . |
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