Query：
学者姓名：李福山
Refining：
Year
Type
Indexed by
Source
Complex
Co-
Language
Clean All
Abstract ：
在我国统筹实施科教兴国战略、人才强国战略、创新驱动发展战略,以及一体推进教育发展、科技创新、人才培养政策的引领与驱动下,高校、企业与科研院所之间的协同育人机制已经从最初的倡议和试点阶段,逐渐迈向了落地实施和深入发展时期.科教融合与产教融合协同育人模式将得到进一步的深化,主要体现在培养主体的多元化、培养层次的提升、培养机制的优化以及培养方式的创新与升级等多个方面.以福州大学物理与信息工程学院为例,针对电子信息领域国家技术和人才战略需求,探索重点高校、头部企业和科研机构通过设立定制化专班、共建科研平台、面向头部企业定向就业、共同举办学术交流论坛、共建导师团队、共同评价培养质量等方式实施研究生培养,打造全要素融合研究生培养新范式,着力实现创新型高层次人才自主培养.
Keyword ：
产教融合 产教融合 校企联合专班 校企联合专班 研究生培养 研究生培养 科教融合 科教融合
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | 杨晓丹 , 柯颖莹 , 郑志刚 et al. 全要素融合的研究生产学研协同培养机制构建研究 [J]. | 中国高校科技 , 2025 , (2) : 93-96 . |
| MLA | 杨晓丹 et al. "全要素融合的研究生产学研协同培养机制构建研究" . | 中国高校科技 2 (2025) : 93-96 . |
| APA | 杨晓丹 , 柯颖莹 , 郑志刚 , 魏金明 , 卢孝强 , 李福山 . 全要素融合的研究生产学研协同培养机制构建研究 . | 中国高校科技 , 2025 , (2) , 93-96 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
Colloidal quantum dots (QDs) have shown great promise in the development of high-resolution displays for near-eye visual communication with the outside world. However, achieving full-color high-precision assembly of QDs at the nanoscale remains a critical challenge. This study proposes a novel strategy for the region-selective assembly of QDs for achieving ultra-high-resolution light-emitting devices. This approach leverages interface-assembled ultrathin surface microstructures to create specific wettability patterns, guiding the selective assembly of QDs on their surfaces. Ultimately, an ultra-high-resolution 36 599 pixels per inch (PPI) light-emitting device is successfully realized, with a record-high external quantum efficiency (EQE) of 18.74%. The addition of a molecular microstructure enhances the fidelity of the assembled QDs pattern, providing nearly a two-fold increase in contrast ratio while effectively suppressing device leakage current. Additionally, the assembly process is compatible with photo-crosslinking technology, resulting in a full-color light-emitting device with an EQE of 11.01%. Our strategy paves a simple and effective way for advancements in high-performance nano-display technology.
Keyword ：
assembly assembly contrast contrast light-emitting device light-emitting device quantum dots quantum dots ultra-high resolution ultra-high resolution
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Zhong, Chao , Yu, Kuibao , Qie, Yuan et al. Ultrahigh-Resolution Full-Color Quantum Dot LEDs Based on Region-Selective Interfacial Self-Assembly [J]. | ADVANCED FUNCTIONAL MATERIALS , 2025 . |
| MLA | Zhong, Chao et al. "Ultrahigh-Resolution Full-Color Quantum Dot LEDs Based on Region-Selective Interfacial Self-Assembly" . | ADVANCED FUNCTIONAL MATERIALS (2025) . |
| APA | Zhong, Chao , Yu, Kuibao , Qie, Yuan , Yu, Yongshen , Lu, Yongyi , Deng, Ge et al. Ultrahigh-Resolution Full-Color Quantum Dot LEDs Based on Region-Selective Interfacial Self-Assembly . | ADVANCED FUNCTIONAL MATERIALS , 2025 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
Mimicking and extending biological sensory memory processing functions and systems—that play significant roles in enhancing interconnections of the human-physical world—are highly preferable for the Internet of Things. However, conventional artificial sensory systems usually consisted of separated modules or relied on perception-memory-processing devices with applications in a limited domain. Here, we propose a self-rectifying multifunctional synapse based on a unique PN optoelectrical memristor interface, achieving an augmented artificial visual system and multifunctional interconnected ports. The synapse realizes in-sensor motion perception and non-contact control beyond perception-memory-processing functions. The self-rectifying device can self-suppress the sneak current in cross-arrays, enabling large-scale and high-density integration. Further integrating synapse with quantum dot light-emitting diodes (QLEDs) evolves more powerful functions like hardware noise filtering and perception-memory-processing-displaying smart systems. © The Author(s) 2025.
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Lin, Q. , Zhu, Y. , Hu, X. et al. Multifunctional PN optoelectronic synapse and its smart integration towards augmented artificial visual system [J]. | npj Flexible Electronics , 2025 , 9 (1) . |
| MLA | Lin, Q. et al. "Multifunctional PN optoelectronic synapse and its smart integration towards augmented artificial visual system" . | npj Flexible Electronics 9 . 1 (2025) . |
| APA | Lin, Q. , Zhu, Y. , Hu, X. , Sun, J. , Wang, Z. , You, K. et al. Multifunctional PN optoelectronic synapse and its smart integration towards augmented artificial visual system . | npj Flexible Electronics , 2025 , 9 (1) . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
Quantum dot photodiodes (QLEDs) hold promising potential for next-generation display and lighting devices due to their high emission efficiency, high color purity in the visible region, tunability of emission wavelengths, and low manufacturing costs. However, QLEDs confine a large number of photons inside the device that cannot be utilized, leading to low external quantum efficiency. In this paper, a simple and efficient strategy to construct bilayer light extraction structures is developed based on the self-assembled polystyrene (PS) microspheres embedded in polyvinyl butyral (PVB) film with excellent thermoplasticity. The maximum external quantum efficiency (EQE) of blue-QLED, green-QLED and red-QLED increased from 8.18% to 13.51%, 12.96% to 19.61% and 21.7% to 25%, respectively. It is found that bilayer light extraction structure does not change the light intensity angular distribution of Lambertian emission mode. The bilayer optically coupled structure proposed in this work provides an efficient and stable way for the improvement of QLED performance.
Keyword ：
External light extraction External light extraction Glass Glass Optical films Optical films Optical surface waves Optical surface waves Performance evaluation Performance evaluation photonic crystal photonic crystal Photonics Photonics QLED QLED Quantum dots Quantum dots self-assembly self-assembly Self-assembly Self-assembly Stimulated emission Stimulated emission Substrates Substrates Surface morphology Surface morphology
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Cui, Leilei , Zhong, Chao , Hu, Hailong et al. High-Performance Quantum Dot Light-Emitting Diodes With Self-Assembled Bilayer Light Extraction Structure [J]. | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (3) : 452-455 . |
| MLA | Cui, Leilei et al. "High-Performance Quantum Dot Light-Emitting Diodes With Self-Assembled Bilayer Light Extraction Structure" . | IEEE ELECTRON DEVICE LETTERS 46 . 3 (2025) : 452-455 . |
| APA | Cui, Leilei , Zhong, Chao , Hu, Hailong , Guo, Tailiang , Li, Fushan . High-Performance Quantum Dot Light-Emitting Diodes With Self-Assembled Bilayer Light Extraction Structure . | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (3) , 452-455 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
Perovskite quantum dots (PQDs) have attracted more and more attention in light-emitting diode (LED) devices due to their outstanding photoelectric properties. Surface ligands not only enable size control of quantum dots but also enhance their optoelectronic performance. However, the efficiency of exciton recombination in PQDs is often hindered by the desorption dynamics of surface ligands, leading to suboptimal electrical performance. In this study, sodium methanesulfonate (NaMeS) was successfully introduced during PQD synthesis and ligand exchange, where the S=O groups effectively interacted with the perovskite components. The NaMeS-modified PQD films exhibited significantly improved surface morphology, radiative recombination efficiency, and carrier mobility. Consequently, Pe-LEDs derived from NaMeS-capped PQDs achieved a remarkable enhancement in performance with a maximum external quantum efficiency of 9.41%. This work thus provides a novel and effective strategy for the development of high-performance PQDs and their applications in LEDs.
Keyword ：
ligand exchange ligand exchange perovskite quantumdots perovskite quantumdots radiativerecombination radiativerecombination sodium methanesulfonate sodium methanesulfonate surface passivation surface passivation
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Ye, Yuliang , Wang, Jiaxiang , Yang, Zunxian et al. Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices [J]. | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (4) : 6639-6647 . |
| MLA | Ye, Yuliang et al. "Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices" . | ACS APPLIED MATERIALS & INTERFACES 17 . 4 (2025) : 6639-6647 . |
| APA | Ye, Yuliang , Wang, Jiaxiang , Yang, Zunxian , Chen, Ye , Zhang, Hui , Bai, Yuting et al. Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices . | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (4) , 6639-6647 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
显示器作为信息传递的载体,对于人们的生活、工作至关重要.随着信息时代的发展,人们对显示质量提出了更高要求,显示单元逐渐趋向于微小化,以满足信息交互的需要.在"元宇宙"和虚拟/增强现实(VR/AR)等新型概念与技术的推动下,微显示技术蓬勃发展.量子点作为微小的发光单元,具有独特的性能优势,包括高色纯度、高量子产率以及可调的发光峰等,其性能几乎不受发光单元尺寸的影响,是实现高性能微显示的有效途径.本文介绍了近年来量子点微显示技术的发展现状,包括图案化技术、全彩化技术以及图案化器件的性能研究和驱动策略,并讨论了其应用前景以及目前面临的主要挑战.本综述对量子点微显示技术研究具有一定的参考价值.
Keyword ：
全彩化技术 全彩化技术 图案化技术 图案化技术 微显示 微显示 量子点 量子点
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | 钟超 , 胡海龙 , 郭太良 et al. 量子点微显示技术的发展与挑战(特邀) [J]. | 中国激光 , 2025 , 52 (5) : 193-212 . |
| MLA | 钟超 et al. "量子点微显示技术的发展与挑战(特邀)" . | 中国激光 52 . 5 (2025) : 193-212 . |
| APA | 钟超 , 胡海龙 , 郭太良 , 李福山 . 量子点微显示技术的发展与挑战(特邀) . | 中国激光 , 2025 , 52 (5) , 193-212 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
Zinc oxide nanoparticles (NPs) are currently indispensable electron transport layer (ETL) materials in achieving high-performance quantum dot (QD) light-emitting diodes (QLEDs). However, due to the high conductivity and pervasive surface defects of ZnO NPs, excessive electron injection and exciton quenching at the QD/ETL interface restrain the practical applications of QLEDs. Here, an ionic liquid additive is introduced to construct a hybrid ETL with ZnO NPs. Ionic liquids tend to anchor at the defective sites of ZnO NPs due to electrostatic interactions and hydrogen bonding. This modification improves the surface properties of QDs, optimizing the interface between QDs and ETL, which in turn decreases the probability of nonradiative recombination. Additionally, the additives modulate the energy band structure of ZnO NPs, resulting in a higher barrier at the ETL/cathode interface to decrease the level of electron injection. The resultant QLEDs achieve a high maximum external quantum efficiency (EQE) of 26.71% and a long lifetime (T 95@1000 cd m-2) of 5140 h. This straightforward approach offers a viable way to fabricate high-efficiency and long operation-lifetime QLEDs.
Keyword ：
charge balance charge balance defectpassivation defectpassivation electron transport layers(ETL) electron transport layers(ETL) ionic liquid ionic liquid QD light-emitting diodes QD light-emitting diodes
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Chen, Tao , Yu, Kuibao , Hu, Hailong et al. Engineering Electron Transport Layer with Ionic Liquid for High-Performance Quantum Dot Light-Emitting Diodes [J]. | ACS APPLIED NANO MATERIALS , 2025 , 8 (9) : 4573-4579 . |
| MLA | Chen, Tao et al. "Engineering Electron Transport Layer with Ionic Liquid for High-Performance Quantum Dot Light-Emitting Diodes" . | ACS APPLIED NANO MATERIALS 8 . 9 (2025) : 4573-4579 . |
| APA | Chen, Tao , Yu, Kuibao , Hu, Hailong , Li, Yuanhang , Huang, Wenjuan , Li, Renjie et al. Engineering Electron Transport Layer with Ionic Liquid for High-Performance Quantum Dot Light-Emitting Diodes . | ACS APPLIED NANO MATERIALS , 2025 , 8 (9) , 4573-4579 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
Halide perovskites (HPs), emerging as a noteworthy class of semiconductors, hold great promise for an array of optoelectronic applications, including anti-counterfeiting, light-emitting diodes (LEDs), solar cells (SCs), and photodetectors, primarily due to their large absorption cross section, high fluorescence efficiency, tunable emission spectrum within the visible region, and high tolerance for lattice defects, as well as their adaptability for solution-based fabrication processes. Unlike luminescent HPs with band-edge emission, trivalent rare-earth (RE) ions typically emit low-energy light through intra-4f optical transitions, characterized by narrow emission spectra and long emission lifetimes. When fused, the cooperative interactions between HPs and REs endow the resulting binary composites not only with optoelectronic properties inherited from their parent materials but also introduce new attributes unattainable by either component alone. This review begins with the fundamental optoelectronic characteristics of HPs and REs, followed by a particular focus on the impact of REs on the electronic structures of HPs and the associated energy transfer processes. The advanced synthesis methods utilized to prepare HPs, RE-doped compounds, and their binary composites are overviewed. Furthermore, potential applications are summarized across diverse domains, including high-fidelity anticounterfeiting, bioimaging, LEDs, photovoltaics, photodetection, and photocatalysis, and conclude with remaining challenges and future research prospects.
Keyword ：
Halide perovskite materials Halide perovskite materials photonic and optoelectronic applications photonic and optoelectronic applications photonic properties photonic properties preparation of RE-HP composites preparation of RE-HP composites rare-earth elements rare-earth elements upconversion upconversion
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Sun, Jiayu , Fu, Hongyang , Jing, Haitong et al. Synergistic Integration of Halide Perovskite and Rare-Earth Ions toward Photonics [J]. | ADVANCED MATERIALS , 2025 , 37 (12) . |
| MLA | Sun, Jiayu et al. "Synergistic Integration of Halide Perovskite and Rare-Earth Ions toward Photonics" . | ADVANCED MATERIALS 37 . 12 (2025) . |
| APA | Sun, Jiayu , Fu, Hongyang , Jing, Haitong , Hu, Xin , Chen, Daqin , Li, Fushan et al. Synergistic Integration of Halide Perovskite and Rare-Earth Ions toward Photonics . | ADVANCED MATERIALS , 2025 , 37 (12) . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
Positive aging in quantum dot light-emitting diodes (QLEDs) is a common phenomenon, and its unpredictability is a serious problem for large size or high-resolution devices. In this work, the compact assembly of quantum dots (QDs) was realized by using Langmuir-Blodgett (LB) technology, and we propose a novel interactive mechanism for the positive aging of QLEDs based on the self-assembled QD film. We suggest that there is a quasi-monolayer phase between strictly solid phase and collapse during the LB process. The QD assembly states vary the external quantum efficiency (EQE) climbing process and the electroluminescent (EL) peak distribution during operation, as well as the aging rearrangement of QDs in the device. The tight alignment of QDs has low entropy and contributes to enhancing device stability. Our study contributes to the understanding of the origin of positive aging of QLEDs and holds potential for the practical application of QLEDs in displays.
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Zheng, Yueting , Luo, Chengyu , Hu, Hailong et al. Positive Aging in Quantum Dot Light-Emitting Diodes with Controllable Quantum Dot Assembly [J]. | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (12) : 2987-2995 . |
| MLA | Zheng, Yueting et al. "Positive Aging in Quantum Dot Light-Emitting Diodes with Controllable Quantum Dot Assembly" . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS 16 . 12 (2025) : 2987-2995 . |
| APA | Zheng, Yueting , Luo, Chengyu , Hu, Hailong , Guo, Tailiang , Li, Fushan . Positive Aging in Quantum Dot Light-Emitting Diodes with Controllable Quantum Dot Assembly . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (12) , 2987-2995 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
Direct photolithography is a feasible patterning technique that facilitates the creation of ultrafine full-color quantum dot (QD) arrays. However, the lithographic pixel size is primarily limited by the wavelength of ultraviolet (UV) light passing through the photomask. Here, we report an ingenious patterning strategy for circumventing pixel resolution limitations via a maskless photolithography, which can readily produce uniform submicrometer patterns (0.5 mu m using a 365 nm UV light). Monolayer photo-cross-linkers are nanoimprinted onto the QD layer to bridge the surface ligands between adjacent QDs under UV irradiation, thereby generating stable QD patterns after developing. More importantly, the molecularly thick photo-cross-linker weakens the electron injection ability and reduces the interface exciton quenching to improve the fluorescence lifetime. We have successfully fabricated high-performance QD light-emitting diodes (QLEDs) with a resolution of 25,400 pixels per inch. This study expands the toolbox for overcoming the diffraction limit of photolithography to achieve ultrahigh resolution QLEDs.
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Qie, Yuan , Hu, Hailong , Yu, Kuibao et al. Breaking the Ultraviolet Lithography Limit to Achieve Submicron Quantum Dot Light-Emitting Array Devices [J]. | ACS MATERIALS LETTERS , 2025 , 7 (4) : 1269-1274 . |
| MLA | Qie, Yuan et al. "Breaking the Ultraviolet Lithography Limit to Achieve Submicron Quantum Dot Light-Emitting Array Devices" . | ACS MATERIALS LETTERS 7 . 4 (2025) : 1269-1274 . |
| APA | Qie, Yuan , Hu, Hailong , Yu, Kuibao , Wu, Rui , Zhong, Chao , Li, Renjie et al. Breaking the Ultraviolet Lithography Limit to Achieve Submicron Quantum Dot Light-Emitting Array Devices . | ACS MATERIALS LETTERS , 2025 , 7 (4) , 1269-1274 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Export
| Results： |
Selected to |
| Format： |
