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学者姓名：赖云锋
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Abstract ：
本发明涉及一种双局域场协同增强上转换发光的复合薄膜，包括衬底、光子晶体层、贵金属层、介质层和上转换发光层。所述复合薄膜的制备方法，先用溶剂热法制备NaGdF4 : Yb3+/Er3+/Al3+纳米晶，接着在衬底上制备光子晶体层，然后在光子晶体层上制备贵金属层，再在贵金属层上制备介质层，最后将上转换发光NaGdF4纳米晶旋涂于介质层上制得上转换发光层。该复合薄膜及其制备方法有利于提高上转换发光性能，且制备简单。
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| GB/T 7714 | 周海芳 , 翁雪花 , 赖云锋 et al. 双局域场协同增强上转换发光的复合薄膜及其制备方法 : CN202111634076.6[P]. | 2021-12-29 00:00:00 . |
| MLA | 周海芳 et al. "双局域场协同增强上转换发光的复合薄膜及其制备方法" : CN202111634076.6. | 2021-12-29 00:00:00 . |
| APA | 周海芳 , 翁雪花 , 赖云锋 , 程树英 . 双局域场协同增强上转换发光的复合薄膜及其制备方法 : CN202111634076.6. | 2021-12-29 00:00:00 . |
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Lanthanide-doped upconversion nanoparticles (UCNPs)have potential applications in optical and optoelectronic devices due to their novel optical properties. The surface plasmon is an effective method in improving the upconversion luminescence (UCL) properties, and it is essential to tunee the distance between the metal NPs and UCNPs for improving UCL. In this work, the Ag/TiO2/NaGdF4:Er3+/Yb3+/Al3+ composite films were fabricated, and the effect of the TiO2 layer thickness on spectral characteristics in the composite films was investigated. It is shown that the thickness of TiO2 film has a significant effect on the Ag NPs plasma resonance and fluorescence intensity. The maximum upconversion emission enhancement factors of the red and green emission were obtained for the sample with 15-nm-thickness TiO2 under the 980 nm excitation. That is mainly originated from the enhancement of the resonate energy transfer (Yb3+→Er3+) rate under the competition between non-radiative transition and local field effects. © 2022 Informa UK Limited, trading as Taylor & Francis Group.
Keyword ：
Ag/TiO2/NaGdF4:Er3+/Yb3+/Al3+ composite films Ag/TiO2/NaGdF4:Er3+/Yb3+/Al3+ composite films energy transfer energy transfer plasma resonance plasma resonance Upconversion fluorescence enhancement Upconversion fluorescence enhancement
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| GB/T 7714 | Zheng, P. , Chen, M. , Zhou, H. et al. Influence of TiO2 Space layer on plasmon enhanced Luminescence of Ag/TiO2/NaGdF4:Er3+/Yb3+/Al3+ composite Films [J]. | Materials Research Innovations , 2023 , 27 (5) : 289-295 . |
| MLA | Zheng, P. et al. "Influence of TiO2 Space layer on plasmon enhanced Luminescence of Ag/TiO2/NaGdF4:Er3+/Yb3+/Al3+ composite Films" . | Materials Research Innovations 27 . 5 (2023) : 289-295 . |
| APA | Zheng, P. , Chen, M. , Zhou, H. , Wang, C. , Lai, Y. , Yu, J. et al. Influence of TiO2 Space layer on plasmon enhanced Luminescence of Ag/TiO2/NaGdF4:Er3+/Yb3+/Al3+ composite Films . | Materials Research Innovations , 2023 , 27 (5) , 289-295 . |
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Surface plasmon resonance and photonic crystals (PCs) effect are effective methods for improving upconversion luminescence (UCL) for upconversion nanoparticles. In this work, PCs/Ag/Al2O3/UC hybrid structure is pre-sented to enhance UCL of NaGdF4:Er3+/Yb3+/Al3+ nanorods through tuning the thickness of the Al2O3 layer. The optical and luminescence properties were studied and compared with those of UC and PCs/Ag/UC hybrid, it is shown that the thickness of Al2O3 layer has a significant effect on fluorescence intensity, outstanding upcon-version luminescence enhancement and the green-to-red intensity ratios have been achieved at 980 nm excita-tion. The maximum enhancement factors of the red and green emission were obtained for the sample with 10 nm Al2O3 layer, respectively. The mechanism of UCL enhancement for PCs/Ag/Al2O3/UC hybrid structure was discussed.
Keyword ：
Ag Ag Dielectric confinement Dielectric confinement Energy transfer Energy transfer Local field enhancement Local field enhancement PCs PCs UC hybrid UC hybrid Upconversion enhancement Upconversion enhancement
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| GB/T 7714 | Zhou, Haifang , Zou, Jiaxin , Weng, Xuehua et al. Upconversion luminescence enhancement of NaGdF4:Er3+/Yb3+/Al3+nanorods through tuning Al2O3 layer in a hybrid photonic-plasmonic-dielectric structure [J]. | OPTICAL MATERIALS , 2023 , 137 . |
| MLA | Zhou, Haifang et al. "Upconversion luminescence enhancement of NaGdF4:Er3+/Yb3+/Al3+nanorods through tuning Al2O3 layer in a hybrid photonic-plasmonic-dielectric structure" . | OPTICAL MATERIALS 137 (2023) . |
| APA | Zhou, Haifang , Zou, Jiaxin , Weng, Xuehua , Lai, Yunfeng , Yu, Jinling . Upconversion luminescence enhancement of NaGdF4:Er3+/Yb3+/Al3+nanorods through tuning Al2O3 layer in a hybrid photonic-plasmonic-dielectric structure . | OPTICAL MATERIALS , 2023 , 137 . |
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提出一种基于伪标签-1D DenseNet-KNN的光伏阵列故障诊断方法,实现在少标签样本下的光伏阵列复合故障开集识别.首先,分析各种常见单一故障和灰尘覆盖下复合故障的I-V特性曲线;然后,为克服常规半监督机器学习算法需手动提取数据特征的问题,采用一种伪标签与1D DenseNet相结合的半监督方法自动提取特征;最后,将从训练数据中提取的特征、训练数据预测的标签和测试样本提取的特征输入KNN算法并进行开集复合故障诊断.实验表明,该方法不仅能准确分类各种已知类别样本,还能识别出未知类别故障,且模型训练只需要少量的标签数据.
Keyword ：
I-V特性曲线 I-V特性曲线 KNN算法 KNN算法 伪标签半监督学习 伪标签半监督学习 光伏阵列 光伏阵列 开集识别 开集识别 故障诊断 故障诊断
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| GB/T 7714 | 陈泽理 , 卢箫扬 , 林培杰 et al. 基于伪标签-1D DenseNet-KNN的光伏阵列开集复合故障诊断方法 [J]. | 福州大学学报（自然科学版） , 2023 , 51 (4) : 490-497 . |
| MLA | 陈泽理 et al. "基于伪标签-1D DenseNet-KNN的光伏阵列开集复合故障诊断方法" . | 福州大学学报（自然科学版） 51 . 4 (2023) : 490-497 . |
| APA | 陈泽理 , 卢箫扬 , 林培杰 , 赖云锋 , 程树英 , 陈志聪 et al. 基于伪标签-1D DenseNet-KNN的光伏阵列开集复合故障诊断方法 . | 福州大学学报（自然科学版） , 2023 , 51 (4) , 490-497 . |
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Three-dimensional (3D) topological insulators (TIs) have attracted much attention due to their topologically protected surface states. Here, we use circularly polarized light to induce the photo-induced anomalous Hall effect (PAHE) in 3D TIs Sb2Te3 thin films with different thicknesses of 5, 7, 12 and 20 quintuple layers (QLs) at room temperature. The dependence of PAHE current on the light spot locations of Sb2Te3 thin films is investigated, which is found to show a completely different behavior from that observed in two-dimensional electron gas (2DEG) systems. This is due to the fact that the total PAHE current is the superposition of the PAHE of the top and bottom surface states. A theoretical model has been proposed to separate the PAHE current of the top and bottom surface states. In addition, as the thickness of the Sb2Te3 film increases from 5 QL to 20 QL, the PAHE currents of the top and bottom surface states first increase and then decrease. The photo-induced anomalous Hall, conductivity of the top surface states in the 7-QL Sb2Te3 film excited by 1064 nm light is as large as 592 nA & BULL; V-1 & BULL; cm & BULL; W-1, which is much larger than that observed in InGaAs/AlGaAs quantum wells (4.45 nA & BULL; V-1 & BULL; cm & BULL; W-1) and GaN/AlGaN heterostructures (1.43 nA & BULL; V-1 & BULL; cm & BULL; W-1). The giant PAHE value observed in Sb2Te3 films suggests that 3D TIs may provide a good platform for spintronic devices.
Keyword ：
Photo-induced anomalous Hall effects Photo-induced anomalous Hall effects Sb2Te3 Sb2Te3 Spatial distribution Spatial distribution Top and bottom surface states Top and bottom surface states Topological insulators Topological insulators
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| GB/T 7714 | Lang, Xinjie , Yu, Jinling , Hong, Xiyu et al. Spatial distribution of photo-induced anomalous Hall effects of the top and bottom surface states in topological insulators Sb2Te3 [J]. | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , 2023 , 150 . |
| MLA | Lang, Xinjie et al. "Spatial distribution of photo-induced anomalous Hall effects of the top and bottom surface states in topological insulators Sb2Te3" . | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 150 (2023) . |
| APA | Lang, Xinjie , Yu, Jinling , Hong, Xiyu , Chen, Yonghai , Cheng, Shuying , Lai, Yunfeng et al. Spatial distribution of photo-induced anomalous Hall effects of the top and bottom surface states in topological insulators Sb2Te3 . | PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES , 2023 , 150 . |
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The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi2Te3 films is investigated. It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi2Te3 film shows an opposite sign with that on the right edge. In addition, the helicity-dependent photoconductivity current increases linearly with the applied longitudinal electric field, and it reverses the sign with the reversal of the electric field. As the thickness of the Bi2Te3 film increases, the helicity-dependent photoconductivity current also increases. Theoretical analysis suggests that the helicity-dependent photo-conductivity current may come from the intrinsic spin orbit coupling (SOC) or the SOC introduced by the chiral impurities or defects.
Keyword ：
Bi2Te3 Bi2Te3 edge states edge states helicity-dependent photoconductance helicity-dependent photoconductance spin orbit coupling spin orbit coupling
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| GB/T 7714 | Zhou, Yuchao , Yu, Jinling , Chen, Yonghai et al. Helicity-dependent photoconductance of the edge states in the topological insulator Bi2Te3 [J]. | CHINESE PHYSICS B , 2023 , 32 (8) . |
| MLA | Zhou, Yuchao et al. "Helicity-dependent photoconductance of the edge states in the topological insulator Bi2Te3" . | CHINESE PHYSICS B 32 . 8 (2023) . |
| APA | Zhou, Yuchao , Yu, Jinling , Chen, Yonghai , Lai, Yunfeng , Cheng, Shuying . Helicity-dependent photoconductance of the edge states in the topological insulator Bi2Te3 . | CHINESE PHYSICS B , 2023 , 32 (8) . |
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Bismuthoxyselenide (Bi2O2Se) is a two-dimensional(2D) layered semiconductor material with high electron Hall mobilityand excellent environmental stability as well as strong spin-orbitinteraction (SOI), which has attracted intense attention for applicationin spintronic and spin optoelectronic devices. However, a comprehensivestudy of spin photocurrent and its microscopic origin in Bi2O2Se is still missing. Here, the helicity-dependent photocurrent(HDPC) was investigated in Bi2O2Se nanosheets.By analyzing the dependence of HDPC on the angle of incidence, wefind that the HDPC originates from surface states with C ( s ) symmetry in Bi2O2Se, which can be attributed to the circular photogalvanic effect(CPGE) and circular photon drag effect (CPDE). It is revealed thatthe HDPC current almost changes linearly with the source-drainvoltage. Furthermore, we demonstrate effective tuning of HDPC inBi(2)O(2)Se by ionic liquid gating, indicating thatthe spin splitting of the surface electronic structure is effectivelytuned. By analyzing the gate voltage dependence of HDPC, we can unambiguouslyidentify the surface polarity and the surface electronic structureof Bi2O2Se. The large HDPC in Bi2O2Se nanosheets and its efficient electrical tuning demonstratethat 2D Bi2O2Se nanosheets may provide a goodplatform for opto-spintronics devices.
Keyword ：
Bi2O2Se nanosheets Bi2O2Se nanosheets circular photogalvanic effect circular photogalvanic effect circularphoton drag effect circularphoton drag effect helicity-dependentphotocurrent helicity-dependentphotocurrent ionic liquid ionic liquid surface polarity surface polarity
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| GB/T 7714 | Wu, Wenyi , Yu, Jinling , Chen, Yong-Hai et al. Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi2O2Se Nanosheets [J]. | ACS NANO , 2023 , 17 (17) : 16633-16643 . |
| MLA | Wu, Wenyi et al. "Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi2O2Se Nanosheets" . | ACS NANO 17 . 17 (2023) : 16633-16643 . |
| APA | Wu, Wenyi , Yu, Jinling , Chen, Yong-Hai , Liu, Yu , Cheng, Shuying , Lai, Yunfeng et al. Electric Control of Helicity-Dependent Photocurrent and Surface Polarity Detection on Two-Dimensional Bi2O2Se Nanosheets . | ACS NANO , 2023 , 17 (17) , 16633-16643 . |
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Antimony sulfide (Sb2S3) photodetectors (PDs) have great potential in commercial applications. The performances are affected by photocarrier distribution and recombination. Here, the gate-controlled Sb2S3 thin film PD is fabricated on the TiO2/SiO2/Si substrate by the vacuum method. The p-channel Sb2S3 transistor obtained a threshold voltage of 0.6 V and a switching ratio of 1064, achieving an effective regulation by gate voltages. A negative gate voltage can enhance conductivity and can suppress recombination. The responsivity and detectivity of the PD reach 1.6 A/W and 1.2 x 1011 Jones, respectively. The device realizes logic outputs by the signal inputs of illumination and gate voltage.(c) 2023 Optica Publishing Group
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| GB/T 7714 | Deng, Hui , Kang, Yubin , Jia, Yi et al. Gate-controlled Sb2S3 thin film photodetectors for logic switches [J]. | OPTICS LETTERS , 2023 , 48 (20) : 5265-5268 . |
| MLA | Deng, Hui et al. "Gate-controlled Sb2S3 thin film photodetectors for logic switches" . | OPTICS LETTERS 48 . 20 (2023) : 5265-5268 . |
| APA | Deng, Hui , Kang, Yubin , Jia, Yi , Chen, Zekun , Wang, Weihuang , Xia, Yong et al. Gate-controlled Sb2S3 thin film photodetectors for logic switches . | OPTICS LETTERS , 2023 , 48 (20) , 5265-5268 . |
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针对成捆原木端面检测存在由于目标密集而形成的大量小目标难以精确识别的问题，提出融合BiFPN(bidirectional weighted feature pyramid network,双向加权特征金字塔网络)和YOLOv5s的密集型原木端面检测方法。为了提高密集原木图像中小目标的平均精度和查全率，模型中添加了一个小目标检测层以保留更多的浅层语义信息；为避免添加了小目标检测层后特征融合过程中的信息丢失，进而导致特征相对复杂的目标误检率、漏检率升高，融合简化版的BiFPN,在特征融合结构中加入跨尺度连接线以保留更多深层的语义信息，二者结合进一步提高了模型的鲁棒性。为了深入验证该模型的有效性，采取COCO公共数据集评判指标，将原木目标分为大、中、小3种目标并分别进行测试分析。试验结果表明：改进的模型对大目标的查全率和平均精度分别为99.70%和98.79%,调和均值为0.991;中目标的查全率和平均精度分别为98.02%和97.90%,调和均值为0.975,大目标和中目标相比于原模型性能几乎不变；小目标的查全率和平均精度为97.25%和96.86%,相比于原模型分别提高了20.96%和21.13%,调和均值0.973,相比于原模型提高了0.114。改进的模型检测速度为平均每张图片11.89 ms,模型参数量为14.4 MB,仅比原模型高了0.7 MB。因此，改进后的模型具有检测精度高、鲁棒性强、轻量化等特点，为实际环境复杂多变、数量庞大的密集原木端面检测提供了一种可行的方法。
Keyword ：
BiFPN BiFPN YOLOv5s YOLOv5s 密集原木端面检测 密集原木端面检测 小目标检测层 小目标检测层 目标检测 目标检测
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| GB/T 7714 | 余平平 , 林耀海 , 赖云锋 et al. 融合BiFPN和YOLOv5s的密集型原木端面检测方法 [J]. | 林业工程学报 , 2023 , 8 (01) : 126-134 . |
| MLA | 余平平 et al. "融合BiFPN和YOLOv5s的密集型原木端面检测方法" . | 林业工程学报 8 . 01 (2023) : 126-134 . |
| APA | 余平平 , 林耀海 , 赖云锋 , 程树英 , 林培杰 . 融合BiFPN和YOLOv5s的密集型原木端面检测方法 . | 林业工程学报 , 2023 , 8 (01) , 126-134 . |
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Abstract ：
The helicity-dependent photoconductance of the edge states in three-dimensional topological insulator Bi2Te3 films is investigated. It is revealed that the helicity-dependent photoconductivity current on the left edge of the Bi2Te3 film shows an opposite sign with that on the right edge. In addition, the helicity-dependent photoconductivity current increases linearly with the applied longitudinal electric field, and it reverses the sign with the reversal of the electric field. As the thickness of the Bi2Te3 film increases, the helicity-dependent photoconductivity current also increases. Theoretical analysis suggests that the helicity-dependent photo-conductivity current may come from the intrinsic spin orbit coupling (SOC) or the SOC introduced by the chiral impurities or defects.
Keyword ：
BiTe BiTe edge states edge states helicity-dependent photoconductance helicity-dependent photoconductance spin orbit coupling spin orbit coupling
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| GB/T 7714 | Yuchao Zhou , Jinling Yu , Yonghai Chen et al. Helicity-dependent photoconductance of the edge states in the topological insulator BiTe [J]. | Chinese Physics B , 2023 , 32 (8) . |
| MLA | Yuchao Zhou et al. "Helicity-dependent photoconductance of the edge states in the topological insulator BiTe" . | Chinese Physics B 32 . 8 (2023) . |
| APA | Yuchao Zhou , Jinling Yu , Yonghai Chen , Yunfeng Lai , Shuying Cheng . Helicity-dependent photoconductance of the edge states in the topological insulator BiTe . | Chinese Physics B , 2023 , 32 (8) . |
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