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学者姓名：孙磊
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Abstract ：
The fabrication of uniform metal bump arrays with submicron-sized diameters is crucial for achieving Micro-LED displays with ultra-high pixel density. This study presents a fabrication strategy that utilizes an undercut sacrificial layer in the lift-off process to achieve fine-pitched metal bump arrays. The influences of sacrificial layer thickness and developing time on the undercut degree, as well as their effects on the morphology and dimensional consistency of bumps, are investigated. It is observed that increasing the developing time leads to a higher degree of undercut, not only facilitating the lift-off of the sacrificial layer but also resulting in an increased base radius of the metal bumps. By optimizing process parameters, we successfully achieved Au bump arrays with a base radius around 0.99 mu m, top radius around 0.3 mu m, and a pitch size of 1.4 mu m, exhibiting height nonuniformity below 5%. This fabrication strategy for uniform metal bump arrays with ultra-high density will greatly contribute to advancing Micro-LED technology towards high definition and high brightness.
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| GB/T 7714 | Lai, Zelei , Zou, Zhenyou , Ye, Jinyu et al. Fabrication of uniform submicron metal bump arrays based on undercut sacrificial layer for lift-off process [J]. | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2025 , 36 (12) . |
| MLA | Lai, Zelei et al. "Fabrication of uniform submicron metal bump arrays based on undercut sacrificial layer for lift-off process" . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 36 . 12 (2025) . |
| APA | Lai, Zelei , Zou, Zhenyou , Ye, Jinyu , Lin, Yibin , Zhou, Xiongtu , Sun, Jie et al. Fabrication of uniform submicron metal bump arrays based on undercut sacrificial layer for lift-off process . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2025 , 36 (12) . |
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To overcome the challenges associated with conventional ultraviolet-C (UV-C) light-emitting devices-such as toxic mercury, aging of organic adhesives, and various stability concerns-an efficient UV-C emitting nano-glass composite (nano-GC) has been developed. The transparent nano-GCs embedded with Pr3+-doped Li(Al7B4O17) nanocrystals (NCs), achieved through precise modulation of the fluoride content in the glass matrix network. The unique architecture of these nano-GCs synergistically combines the high luminescence efficiency characteristic of a crystalline phase with the robustness of glass. Upon excitation by deep-UV, X-ray and high energy electron-beams, the nano-GCs exhibit pronounced 5d-4f interconfigurational emissions of Pr3+, with their emission profile closely aligning with the germicidal effectiveness curve. Although the transmittance of nano-GCs is reduced compared to that of precursor glass (PG), their UV-C luminescence output is significantly enhanced-e.g., a sixfold increase under e-beam pumping. These nano-GCs achieve an impressive photoluminescence quantum yield of up to 25.93%, surpassing most previously reported Pr3+ doped glasses and nano-GCs. Moreover, the nano-GCs exhibit robust X-ray excited luminescence, with an intensity more than twice that of the commercial Bi4Ge3O12 (BGO) crystal, and exhibit a highly linear response to X-ray dose, accompanied by a decay time of 24.13 ns under gamma-ray excitation. Collectively, this study presents a novel approach to the development of disinfection phosphors and fast scintillators.
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| GB/T 7714 | Wang, Sikai , Wu, Ziyang , Sun, Lei et al. UV-C emitting phosphors of Pr3+-doped fluoroborate nano-glass composites for disinfection and as fast scintillators [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2025 , 13 (12) : 6302-6308 . |
| MLA | Wang, Sikai et al. "UV-C emitting phosphors of Pr3+-doped fluoroborate nano-glass composites for disinfection and as fast scintillators" . | JOURNAL OF MATERIALS CHEMISTRY C 13 . 12 (2025) : 6302-6308 . |
| APA | Wang, Sikai , Wu, Ziyang , Sun, Lei , Ren, Jinjun , Zheng, Xiaoxin , Zhang, Jianzhong et al. UV-C emitting phosphors of Pr3+-doped fluoroborate nano-glass composites for disinfection and as fast scintillators . | JOURNAL OF MATERIALS CHEMISTRY C , 2025 , 13 (12) , 6302-6308 . |
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针对细粒度图像类间差异小、鉴别性特征难以捕捉、识别精度低等问题,提出一种基于跨粒度特征渐进融合的细粒度图像识别方法.首先,使用随机区域混淆模块(RRCM)生成不同粒度级别的图像,用于训练骨干网络ConvNeXt的不同阶段;其次,使用随机样本交换模块(RRSM)增强不同粒度图像在模型中层的表征;然后,使用渐进式多粒度训练策略、互信道损失函数进行模型训练,协同融合跨粒度信息;最后,拼接融合多粒度特征并组合分类器,获得最终识别结果.实验结果表明,所提方法在CUB-200-2011、Stanford Cars和FGVC-Aircraft等3个公开数据集上的识别精度分别为92.8%、95.5%和94.0%,优于当前主流的细粒度图像识别方法.在自行构建的Lock-Hole锁芯孔数据集上的识别精度达到97.3%,单张图像平均识别时间为0.016 s,能够实现锁芯孔图像的精准识别,满足应急开锁场景下的快速锁芯孔识别要求.
Keyword ：
ConvNeXt ConvNeXt 渐进多粒度训练 渐进多粒度训练 细粒度图像 细粒度图像 跨粒度信息融合 跨粒度信息融合 锁芯孔识别 锁芯孔识别
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| GB/T 7714 | 朱坤华 , 孙磊 , 廖一鹏 et al. 基于跨粒度特征渐进融合的细粒度锁芯孔识别 [J]. | 激光与光电子学进展 , 2024 , 61 (18) : 155-166 . |
| MLA | 朱坤华 et al. "基于跨粒度特征渐进融合的细粒度锁芯孔识别" . | 激光与光电子学进展 61 . 18 (2024) : 155-166 . |
| APA | 朱坤华 , 孙磊 , 廖一鹏 , 严欣 , 程飞飞 . 基于跨粒度特征渐进融合的细粒度锁芯孔识别 . | 激光与光电子学进展 , 2024 , 61 (18) , 155-166 . |
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In this paper, the highly oriented ZnO/ZrN nanoneedle emitters with excellent field emission performance were fabricated by sputtering ZrN particles with different N2 flux to modify ZnO nanoneedle arrays. The effects of different N2 flow on the microscopic morphology, structure and field emission properties of ZnO nanoneedles were investigated. The results shows that the ZnO/ZrN nanoneedles (ZnO/ZrN-1.6) emitter prepared when the flow of N2 gas is 1.6 SCCM exhibits the best field emission performance, with the lowest turn-on electric field Eto at 0.81 V/& mu;m, and a field emission current density of 25 mA/cm2 which was 25 times of pure ZnO. In addition to the improvement of band structure, the improvement of field emission performance can also be attributed to the tunneling effect of electrons through heterostructure. This well-aligned ZnO/ZrN core-shell cathode with excellent emission characteristics grown on carbon cloth substrate has the potential applications in future flexible light source devices.
Keyword ：
Core -shell structure Core -shell structure Field emission Field emission ZnO ZnO
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| GB/T 7714 | Sun, Lei , Wang, Xingfu , Lai, Wenzong et al. Effect of N2 flux on the field emission properties of synthesized ZnO/ZrN core-shell nanostructures [J]. | VACUUM , 2023 , 214 . |
| MLA | Sun, Lei et al. "Effect of N2 flux on the field emission properties of synthesized ZnO/ZrN core-shell nanostructures" . | VACUUM 214 (2023) . |
| APA | Sun, Lei , Wang, Xingfu , Lai, Wenzong , Liao, Yipeng , Ma, Lian . Effect of N2 flux on the field emission properties of synthesized ZnO/ZrN core-shell nanostructures . | VACUUM , 2023 , 214 . |
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扩散板作为液晶显示器(Liquid Crystal Display,LCD)背光中不可或缺的重要部件,可起到雾化光线的作用.常见的扩散板主要有表面微结构型与粒子散射型两种,主要性能参数是雾度及透光性,加入量子点的扩散板还具备色转换和改善色彩呈现能力的特性.相较于量子点色彩增强膜,量子点扩散板具有制备工艺更简单、成本更低、雾化能力更高等优势,非常适合于Mini-LED背光源.本文对液晶显示用扩散板的研究进展做了简要概述,并着重介绍了多层结构的量子点扩散板的制备工艺及性能.在稳定性方面,所制备量子点扩散板在高温高湿(60℃/90％RH)环境下可长时间储存,在蓝光照射条件下(中心波长450 nm,45℃/85％RH)的T95寿命超过了1000 h.同时,该量子点扩散板在450 nm蓝光Mini-LED背光照射下的亮度均匀性高于80％,蓝、绿、红光的半峰宽分别小于20 nm、25 nm、25 nm,色域覆盖率达到了DCI-P3标准的99.58％.总之,该量子点扩散板兼具优异的色转换与匀光的功能,且寿命稳定,有望在大中型尺寸液晶显示器中得到大规模应用.
Keyword ：
Mini-LED Mini-LED 扩散板 扩散板 液晶显示 液晶显示 背光 背光 量子点 量子点
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| GB/T 7714 | 叶道春 , 谢洪兴 , 李思杰 et al. 液晶显示用量子点扩散板的研究进展 [J]. | 液晶与显示 , 2023 , 38 (3) : 304-318 . |
| MLA | 叶道春 et al. "液晶显示用量子点扩散板的研究进展" . | 液晶与显示 38 . 3 (2023) : 304-318 . |
| APA | 叶道春 , 谢洪兴 , 李思杰 , 季洪雷 , 许怀书 , 李阳 et al. 液晶显示用量子点扩散板的研究进展 . | 液晶与显示 , 2023 , 38 (3) , 304-318 . |
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Diffuser plate which has the function of scattering light is an important component of liquid crystal display (LCD). The common diffuser plates mainly divide into the type of surface with microstructure and internal particle scattering, whose essential properties are hazing and transmitting light. The diffuser plates with embedded quantum dots also feature color conversion and improve color rendering capabilities. Compared with the combination of a quantum dot enhancement film (QDEF) and a diffuser plate, the quantum dot diffuser plate (QD-DP) has the advantages of simpler preparation process, lower cost, and higher atomization ability, which is suitable for mini-LED backlight. This paper briefly summarizes the research progress of diffuser plate for liquid crystal display, and focuses on the preparation process and performance of a multi-layer QD-DP. In terms of stability, the prepared QD-DP can be stored for a long time in the environment of high temperature and high humidity (60 & DEG;C/90%), and the lifetime (T95) exceeds 1 000 h under blue light irradiation (450 nm, 45 & DEG;C/85% RH). Moreover, the luminance uniformity of QD-DP under 450 nm blue light irradiation is higher than 80%. The half-peak width of blue/green/red light is lower than 20 nm,25 nm,25 nm, respectively. The color gamut area reaches 99. 58% of the DCI-P3 standard. In conclusion, QD-DP has excellent functions of color conversion and uniform light coupled with the characteristics of stable lifespan, which is expected to be widely used in large and medium-sized LCDs.
Keyword ：
backlight backlight diffuser plate diffuser plate LCD LCD Mini-LED Mini-LED quantum dots quantum dots
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| GB/T 7714 | Dao-chun, Ye , Hong-xing, Xie , Si-jie, Li et al. Research progress of quantum-dot diffuser plate for liquid crystal display [J]. | CHINESE JOURNAL OF LIQUID CRYSTALS AND DISPLAYS , 2023 , 38 (3) : 304-318 . |
| MLA | Dao-chun, Ye et al. "Research progress of quantum-dot diffuser plate for liquid crystal display" . | CHINESE JOURNAL OF LIQUID CRYSTALS AND DISPLAYS 38 . 3 (2023) : 304-318 . |
| APA | Dao-chun, Ye , Hong-xing, Xie , Si-jie, Li , Hong-lei, J., I , Huai -shu, Xu , Yang, L., I et al. Research progress of quantum-dot diffuser plate for liquid crystal display . | CHINESE JOURNAL OF LIQUID CRYSTALS AND DISPLAYS , 2023 , 38 (3) , 304-318 . |
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The field emission electron source has a wide range of application value in the field of vacuum electronics, and the realization of the uniformity and patterning of the in-situ growth of the emitter material is the key technology. The traditional patterning process is complicated and the pattern has not been carefully designed, resulting in uneven electric field distribution. This paper uses ANSYS Maxwell 16.0 simulation software to study the law of electron motion trajectory, and proposes a new idea of the effective emission size of the graphical emitter array and the cathode structure of the optimal array spacing to improve the field emission performance. The simulation results show that when the array spacing d is 200 μm, the electric field distribution in the central area of the patterned array is flat, and the surrounding area of the array rises abruptly. This is mainly due to the fact that the edge part of the array exhibits the characteristics of a needle tip more than the central part of the array. When d is smaller, the field strength of the edge area between the unit arrays is superimposed, and a field strength superimposition area appears. When d slowly increases, the edge superposition effect of the field strength is weakened, and the electric field shielding effect is also weakened. Therefore, when d is larger (400 μm), the field strength of the cathode surface tends to be flat, because the edge superposition effect of the field strength and the electric field shielding effect are balanced. However, as d increases to a certain extent, when the array spacing is 600 μm, the center position of the cell array plane can be relatively far away, the field emission of the cell array is relatively independent, and the electron emission has a neutral area. It can be seen that when d is selected at a moderate value, the superposition effect of the field strength at the edge of the array is weakened, and there will be no blind areas in the surrounding electric field, and the electric field basically achieves a uniform distribution. Subsequently, according to the simulation results, the patterned seed layer is accurately positioned by inkjet printing, and then the ZnO nanorod array is hydrothermally grown. Field emission test results show that as d increases, the turn-on field strength Eon decreases from 2.95 V/μm at 200 μm to 0.57 V/μm at 400 μm, and further changes to 2.26 V/μm at 600 μm. The enhancement factor b increases first and then decreases as d increases from 200 μm to 600 μm. This is consistent with the simulation results, that is, when the effective emission size of the ZnO cathode array is 200 μm, when d is 400 μm, the field emission performance is optimal, and its turn-on field is 0.57 V/μm, and the field emission enhancement factor is 32 179. Combining the high efficiency of graphic design and inkjet printing, it is expected to realize a high-performance field emission electron source. © 2022, Science Press. All right reserved.
Keyword ：
Computer software Computer software Electrons Electrons Electron sources Electron sources Field emission Field emission Field emission cathodes Field emission cathodes Field emission displays Field emission displays II-VI semiconductors II-VI semiconductors Ink jet printing Ink jet printing Nanorods Nanorods Shielding Shielding Structural optimization Structural optimization Vacuum technology Vacuum technology Zinc oxide Zinc oxide
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| GB/T 7714 | Sun, Lei , Liao, Yipeng , Zhu, Kunhua et al. Preparation of ZnO Patterned Array and Its Field Emission Performance [J]. | Acta Photonica Sinica , 2022 , 51 (5) . |
| MLA | Sun, Lei et al. "Preparation of ZnO Patterned Array and Its Field Emission Performance" . | Acta Photonica Sinica 51 . 5 (2022) . |
| APA | Sun, Lei , Liao, Yipeng , Zhu, Kunhua , Yan, Xin . Preparation of ZnO Patterned Array and Its Field Emission Performance . | Acta Photonica Sinica , 2022 , 51 (5) . |
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In this paper, a InP/ZnSe/ZnS quantum dots photoresist (QDPR) film has been successfully prepared after the as-synthesized InP/ZnSe/ZnS quantum dots (QDs) were mixed with the photoresist, where the molar ratio of P3- : In3+: Se2- was 6:1:3 and the reaction time the ZnS shell was 60 min. The influence of the thickness of the film and the mass ratio of InP/ZnS QDs to photoresist on the photoluminescence quantum yield (PLQY) was investigated. The results show that the PLQY changes from 39.9% to 52.6% and the CIE color coordinates could vary from (0.28, 0. 10) to (0.65, 0.32) with the assistance of 5.5 pairs of DBR structures when the thickness of the InP/ZnSe/ZnS QDPR films is 7.82 mu m and the mass ratio (wt%) of the InP/ZnSe/ZnS QDs to the photoresist is 25%. Compared with the InP/ZnSe/ZnS QDs film, the PLQY of the patterned InP/ZnSe/ZnS QDs layer can reach to be 47.2% and the CIE color coordinates of is varied from (0.28, 0.10) to (0.35, 0.14). Furthermore, the PLQY of the patterned InP/ZnSe/ZnS QDs layer can be improved to 65.1% at 5.5 pairs of DBR structures. Based on these results, the InP/ZnSe/ZnS QDs films, especially patterned QD layer, show great potential for the fabrication of high-quality QD color filter and full-color displays. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
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| GB/T 7714 | Chen, Wandi , Wang, Wenwen , Sun, Lei et al. Synthesis and characterization of InP/ZnSe/ZnS quantum dots for photo-emissive color conversion [J]. | OPTICAL MATERIALS EXPRESS , 2022 , 12 (4) : 1717-1730 . |
| MLA | Chen, Wandi et al. "Synthesis and characterization of InP/ZnSe/ZnS quantum dots for photo-emissive color conversion" . | OPTICAL MATERIALS EXPRESS 12 . 4 (2022) : 1717-1730 . |
| APA | Chen, Wandi , Wang, Wenwen , Sun, Lei , Chen, Shiyao , Yan, Qun , Guo, Tailiang et al. Synthesis and characterization of InP/ZnSe/ZnS quantum dots for photo-emissive color conversion . | OPTICAL MATERIALS EXPRESS , 2022 , 12 (4) , 1717-1730 . |
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The paper presents an effective preparation approach for patterning quantum-dot color conversion films (QDCCF) in white-balance display backlights, where the red and green sub-pixel arrays are respectively fabricated by precise screen printing technology and the subsequent overprinting process. By using the D65 light source as a design target, a theoretical adjustment method for output white balance is proposed, in which the quantity ratio of QDs can be obtained by combining the theoretical balance of three primary colors, the experimental balance of the QD's intensity, and the transmittance of color filter (CF). The ratio of green/red QDs for the target white balance was verified by both the experiment and theoretical calculation. Results show that the measured chromaticity coordinates of the backlight sample are (0.3138, 0.3402), the corresponding color temperature is 6385 K, and the color gamut can reach 86.1% Rec. 2020 in CIE 1976 chromaticity diagram. The experimental results accords well with the design theory, which supports that this method could be an alternative way for the fabrication of QDCCF.
Keyword ：
Backlight Backlight Color conversion Color conversion Color gamut Color gamut Quantum dot Quantum dot Screen printing Screen printing White balance White balance
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| GB/T 7714 | Huang, Bingle , Chen, Enguo , Sun, Lei et al. Quantum-dot color conversion film patterned by screen printing and overprinting process for display backlights [J]. | OPTICS AND LASER TECHNOLOGY , 2022 , 145 . |
| MLA | Huang, Bingle et al. "Quantum-dot color conversion film patterned by screen printing and overprinting process for display backlights" . | OPTICS AND LASER TECHNOLOGY 145 (2022) . |
| APA | Huang, Bingle , Chen, Enguo , Sun, Lei , Guo, Tailiang . Quantum-dot color conversion film patterned by screen printing and overprinting process for display backlights . | OPTICS AND LASER TECHNOLOGY , 2022 , 145 . |
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| GB/T 7714 | Huang, Bingle , Chen, Enguo , Sun, Lei et al. Quantum-dot color conversion film patterned by screen printing and overprinting process for display backlights (vol 145, 107486, 2022) [J]. | OPTICS AND LASER TECHNOLOGY , 2022 , 147 . |
| MLA | Huang, Bingle et al. "Quantum-dot color conversion film patterned by screen printing and overprinting process for display backlights (vol 145, 107486, 2022)" . | OPTICS AND LASER TECHNOLOGY 147 (2022) . |
| APA | Huang, Bingle , Chen, Enguo , Sun, Lei , Guo, Tailiang . Quantum-dot color conversion film patterned by screen printing and overprinting process for display backlights (vol 145, 107486, 2022) . | OPTICS AND LASER TECHNOLOGY , 2022 , 147 . |
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