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学者姓名：许晓锐
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Abstract ：
In this work, a vertical gallium oxide (Ga2O3) Schottky barrier diode (SBD) with suspended field plate-assisted shallow mesa termination (SFPM-SBD) is proposed and fabricated. The suspended field plate is achieved by using Cl-2 in the ICP etching process to facilitate isotropic etching of Ga2O3. Compared with shallow mesa SBD, the introduction of SFPM can further optimize the electric field (E_Field) distribution. Consequently, a high breakdown voltage (BV) of over 3.5 kV and a low specific ON-resistance of 5.77 m Omega & sdot;cm(2) are achieved, resulting in a power figure of merit (PFOM) >2.12 GW/cm(2). Furthermore, the large-area device with 3 x 3 mm(2) is fabricated, achieving a BV exceeding 1.5 kV and a high forward current of 12 A at 2 V. The simplified fabrication process of the SFPM-SBD, combined with its outstanding performance, makes it a promising candidate for multikilovolt and ampere-class applications.
Keyword ：
Anodes Anodes Electric breakdown Electric breakdown Electric field (E_Field) management Electric field (E_Field) management Etching Etching Fabrication Fabrication gallium oxide (Ga2O3) gallium oxide (Ga2O3) Laser theory Laser theory Leakage currents Leakage currents Optics Optics Power lasers Power lasers Schottky barrier diode (SBD) Schottky barrier diode (SBD) Schottky barriers Schottky barriers Schottky diodes Schottky diodes termination termination
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| GB/T 7714 | Han, Xueli , Xu, Xiaorui , Wang, Zhengbo et al. Ga2O3 Vertical SBD With Suspended Field Plate-Assisted Shallow Mesa Termination for Multikilovolt and Ampere-Class Applications [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2025 , 72 (8) : 4307-4312 . |
| MLA | Han, Xueli et al. "Ga2O3 Vertical SBD With Suspended Field Plate-Assisted Shallow Mesa Termination for Multikilovolt and Ampere-Class Applications" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 72 . 8 (2025) : 4307-4312 . |
| APA | Han, Xueli , Xu, Xiaorui , Wang, Zhengbo , Yang, Hanchao , Chen, Desen , Deng, Yicong et al. Ga2O3 Vertical SBD With Suspended Field Plate-Assisted Shallow Mesa Termination for Multikilovolt and Ampere-Class Applications . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2025 , 72 (8) , 4307-4312 . |
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The unclear p-type conduction mechanism and lack of reliable p-type Ga2O3 severely hinder Ga2O3-based high-voltage electronics. Here, we demonstrate in situ nitrogen (N) doping via metal-organic chemical vapor deposition homoepitaxy using N2O as oxygen source and acceptor dopant. Structural and compositional analyses confirm efficient N incorporation (favored by N-Ga bonding) compensating residual Si/H donors without compromising crystallinity. The Ga2O3:N epilayers achieve excellent p-type performance: 1.04 x 1018 cm-3 hole concentration, 0.47 cm2 V-1 s-1 mobility at room temperature, and 0.168 eV activation energy. A completely new insight into the p-type conduction mechanism in Ga2O3 is introduced, focusing on the crystallographic visualization of acceptors (N2-) and holes (O-), as well as the hole excitation process. It is suggested that careful suppression of the donor compensation effect and precise control of the N chemical potential, which leads to the fabrication of trace O- species solid-dissolved within Ga2O3, are essential for achieving high-hole-concentration p-type conduction in oxides.
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| GB/T 7714 | Lu, Yaoping , Jia, Lemin , Chen, Duanyang et al. Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping [J]. | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (17) : 4243-4251 . |
| MLA | Lu, Yaoping et al. "Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping" . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS 16 . 17 (2025) : 4243-4251 . |
| APA | Lu, Yaoping , Jia, Lemin , Chen, Duanyang , Li, Titao , Qi, Hongji , Xu, Xiaorui et al. Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (17) , 4243-4251 . |
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Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of (1-Ga2O3 thin film to enhance the power figure of merit of (1-Ga2O3 Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of (1-Ga2O3 SBDs could be modified by varying the ratios of BCl3 and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of (1-Ga2O3 epitaxial layer, the (1-Ga2O3 SBD without termination structure exhibits a low specific on-resistance (Ron,sp) of 4 m Omega & sdot;cm2 and high breakdown voltage (BV) of 1500 V. These results can pave the way for the preparation of high-performance (1-Ga2O3 power SBDs.
Keyword ：
Beta-phase gallium oxide Beta-phase gallium oxide Inductively coupled plasma etching Inductively coupled plasma etching Schottky barrier diode Schottky barrier diode Surface quality Surface quality
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| GB/T 7714 | Deng, Yicong , Chen, Desen , Li, Titao et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode [J]. | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
| MLA | Deng, Yicong et al. "Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode" . | MICRO AND NANOSTRUCTURES 199 (2025) . |
| APA | Deng, Yicong , Chen, Desen , Li, Titao , Zhu, Minmin , Xu, Xiaorui , Zhang, Haizhong et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode . | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
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Conventional Ga2O3-based solar-blind photodetectors typically require a high bias voltage for efficient operation, leading to significant energy consumption. To address this, we propose an alternative approach using MOCVDgrown homoepitaxial (3-Ga2O3 thin films on (100) Sn-doped (3-Ga2O3 wafer to develop photodetectors with ultralow bias and high gain. A graphene/ Ga2O3 heterojunction device was fabricated, exhibiting an exceptionally low dark current of 0.1nA and a photocurrent ratio of 104 at -5 V, along with a suppression ratio (R254nm/R405nm) of 1800 at 0 V. By leveraging graphene's carrier-carrier scattering and Ga2O3 ' s UV absorption, the device achieved a responsivity increase from 0.04 mA/W (0 V) to 30 mA/W (-0.5 V), equivalent to a 73944 % enhancement, while the detectivity improved by 1096 %, reaching 2.68 x 1012 Jones. This work provides insights into the development of highly sensitive, low-power solar-blind UV photodetectors.
Keyword ：
Detectivity Detectivity Heterojunction Heterojunction Homoepitaxial Ga 2 O 3 Homoepitaxial Ga 2 O 3 Responsivity Responsivity Solar-blind photodetectors Solar-blind photodetectors
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| GB/T 7714 | Zhuang, Jiachang , Jia, Lemin , Lu, Yaoping et al. High-performance, energy-efficient graphene/Ga2O3 heterojunction solar-blind photodetectors enhanced by carrier-carrier scattering [J]. | OPTICS AND LASER TECHNOLOGY , 2025 , 192 . |
| MLA | Zhuang, Jiachang et al. "High-performance, energy-efficient graphene/Ga2O3 heterojunction solar-blind photodetectors enhanced by carrier-carrier scattering" . | OPTICS AND LASER TECHNOLOGY 192 (2025) . |
| APA | Zhuang, Jiachang , Jia, Lemin , Lu, Yaoping , Zheng, Zhenjie , Li, Titao , Zhu, Shoudong et al. High-performance, energy-efficient graphene/Ga2O3 heterojunction solar-blind photodetectors enhanced by carrier-carrier scattering . | OPTICS AND LASER TECHNOLOGY , 2025 , 192 . |
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Photovoltaic solar-blind ultraviolet photodetectors (SBPDs) operate independently of an external power source, addressing critical demands in extreme environments, such as forest fire detection and atmospheric ozone layer monitoring. Gallium oxide (Ga2O3) offers significant potential for extreme applications due to its radiation resistance and high-temperature stability. Here, we present a novel homoepitaxy strategy to produce an "atomic smooth" step-flow Ga2O3 photosensitive layer, successfully fabricating device-grade Ga2O3/n+-Ga2O3 homojunctions for photovoltaic SBPDs. These devices exhibit a maximum open-circuit voltage of 1.0 V, an ultrahigh external quantum efficiency of 59.5%, and an ultrafast response time of 100 ns under zero bias, maintaining consistent performance even at 390 K. By implementing a 2D step-flow growth mode, both bulk and interface defects were effectively suppressed, achieving the desired band alignment. Furthermore, the optimized high-quality depletion region formed by the Ga2O3 layer facilitates enhanced carrier drift, resulting in an efficient carrier collection. This work fully explores the potential of Ga2O3 SBPDs for extreme applications and provides an effective design strategy for achieving photovoltaic detectors characterized by zero power consumption, high responsivity, and rapid response.
Keyword ：
Ga2O3 Ga2O3 homoepitaxy homoepitaxy open-circuit voltage open-circuit voltage solar-blind photodetector solar-blind photodetector step-flow step-flow
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| GB/T 7714 | Zhu, Shoudong , Zheng, Zhenjie , Lu, Yaoping et al. Ultrahigh-Performance Photovoltaic Ga2O3 Solar-Blind Ultraviolet Detectors via Two-Dimensional Step-Flow Growth and Drift Region Optimization [J]. | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (34) : 48523-48531 . |
| MLA | Zhu, Shoudong et al. "Ultrahigh-Performance Photovoltaic Ga2O3 Solar-Blind Ultraviolet Detectors via Two-Dimensional Step-Flow Growth and Drift Region Optimization" . | ACS APPLIED MATERIALS & INTERFACES 17 . 34 (2025) : 48523-48531 . |
| APA | Zhu, Shoudong , Zheng, Zhenjie , Lu, Yaoping , Long, Hao , Zhuang, Jiachang , Jia, Lemin et al. Ultrahigh-Performance Photovoltaic Ga2O3 Solar-Blind Ultraviolet Detectors via Two-Dimensional Step-Flow Growth and Drift Region Optimization . | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (34) , 48523-48531 . |
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In this Letter, a Ga2O3 vertical Schottky barrier diode (SBD) with self-aligned field plate and mesa termination is fabricated and studied. The combination of field plate and mesa termination can effectively make the electric field distribution uniform in the termination, and thus the proposed SBD features high breakdown voltage (BV). Moreover, to eliminate alignment deviation and simplify the fabrication process, a self-aligned etching process is developed. The experimental results show that a low specific on-resistance of 4.405 m Omegacm(2) and a high BV of 3113 V can be simultaneously derived on the proposed SBD, yielding a high power figure of merit of 2.2 GW/cm(2). Meanwhile, a considerably low forward voltage of 1.53 V at 100 A/cm(2) is also achieved, demonstrating the low conduction loss of the device.
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination [J]. | APPLIED PHYSICS LETTERS , 2024 , 125 (2) . |
| MLA | Xu, Xiaorui et al. "Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination" . | APPLIED PHYSICS LETTERS 125 . 2 (2024) . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Chen, Duanyang , Wang, Fangzhou , Yu, Cheng et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination . | APPLIED PHYSICS LETTERS , 2024 , 125 (2) . |
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A novel design of ultrahigh efficiency and ultralow threshold energy all-optical switches based on local state transition of complete-connected optical waveguide networks (CCOWNs) is proposed. The generation of the ultra-narrow transmission peak and the ultra-strong photonic localization in network is attributed to the mutation of states, which are significant improvements in the performance of all-optical switch. First, the ultra-strong photonic localization induces the Kerr effect in nonlinear material, which transforms the transmission peaks into a transmission valley and results in the super-high efficiency. The efficiency of switch based on CCOWN with 11 unit cell (UC) and each UC possessing 7 nodes was calculated and found to be approximately 1.38x1039\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$1.38 \times 10<^>{39}$$\end{document}, which is 13 orders of magnitude better than previously reported. Furthermore, the ultra-strong photonic localization also leads to the ultralow threshold energy. Calculations reveal that the threshold control energy of all-optical switch based on CCOWN only with 7 UC and each UC possessing 5 nodes is about 5.78x10-30\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$5.78 \times 10<^>{-30}$$\end{document} J, which is 5 orders of magnitude smaller than the best reported results. In addition, fitting formulas for the transmission and switching efficiency with UC number have been derived, and the results show that the switching efficiency increased exponentially with the UC number and nodes. This study not only presents a new model for designing all-optical switch with outstanding performance, but also provides the possibility for further practical use of all-optical switch, while deepening our insight into optical waveguide networks.
Keyword ：
All-optical switching All-optical switching Nonlinear optics Nonlinear optics Ultrahigh efficiency Ultrahigh efficiency Waveguide network Waveguide network
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| GB/T 7714 | Xu, Xiaohui , Xu, Xiaorui . Ultrahigh efficiency and ultralow threshold energy all-optical switch based on state transition of defective waveguide networks [J]. | OPTICAL REVIEW , 2024 , 31 (5) : 538-547 . |
| MLA | Xu, Xiaohui et al. "Ultrahigh efficiency and ultralow threshold energy all-optical switch based on state transition of defective waveguide networks" . | OPTICAL REVIEW 31 . 5 (2024) : 538-547 . |
| APA | Xu, Xiaohui , Xu, Xiaorui . Ultrahigh efficiency and ultralow threshold energy all-optical switch based on state transition of defective waveguide networks . | OPTICAL REVIEW , 2024 , 31 (5) , 538-547 . |
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In this work, a novel gallium oxide (Ga2O3) vertical FinFET with integrated Schottky barrier diode (SBD-FinFET), which achieves low conduction losses, is proposed. In the reverse conduction state, the integrated SBD can provide additional low-resistance path to conduct reverse current, hence achieving low reverse conduction loss. In the switching state, the SBD-FinFET can also reduce gate-drain capacitance and gate charge, thus featuring fast switching speed and low switching losses. Furthermore, in the other states, the integrated SBD of the SBD-FinFET is in the OFF state, which does not significantly affect the device characteristics. The well-calibrated simulation results show that when compared with the state-of-the-art FinFET with integrated Fin channel and ohmic contact diode (FOD-FinFET), the SBD-FinFET can reduce reverse conduction loss, turn-on loss, and turn-off loss by 25%, 19%, and 22%, respectively, while other characteristics retain almost unchanged.
Keyword ：
beta-gallium oxide (Ga2O3) beta-gallium oxide (Ga2O3) conduction losses conduction losses Electric breakdown Electric breakdown Field effect transistors Field effect transistors FinFET FinFET FinFETs FinFETs Gallium Gallium Logic gates Logic gates Schottky barrier diode (SBD) Schottky barrier diode (SBD) Schottky barriers Schottky barriers Schottky diodes Schottky diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) : 2530-2535 . |
| MLA | Xu, Xiaorui et al. "Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 4 (2024) : 2530-2535 . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Xu, Xiaohui , Yang, Dan , Zhu, Minmin et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) , 2530-2535 . |
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In this Letter, a high-quality and high-resistivity nitrogen (N)-doped Ga2O3 current blocking layer (CBL) is grown utilizing metal-organic chemical vapor deposition homoepitaxial technology. By using nitrous oxide (N2O) as oxygen source for Ga2O3 growth and N source for doping and controlling the growth temperature, the grown CBL can effectively achieve high (similar to 10(19) cm(-3)) or low (similar to 10(17) cm-3) N doping concentrations, as well as high crystal quality. Furthermore, the electrical properties of the developed CBL are verified at the device level, which shows that the device using the CBL can withstand bidirectional voltages exceeding 3.5 kV with very low leakage (<= 1 x 10(-4) A/cm2). This work can pave the way for the realization of high-voltage and low-leakage Ga2O3 vertical devices, especially metal-oxide-semiconductor field effect transistors.
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| GB/T 7714 | Xu, Xiaorui , Chen, Desen , Lu, Yaoping et al. Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication [J]. | APPLIED PHYSICS LETTERS , 2024 , 125 (20) . |
| MLA | Xu, Xiaorui et al. "Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication" . | APPLIED PHYSICS LETTERS 125 . 20 (2024) . |
| APA | Xu, Xiaorui , Chen, Desen , Lu, Yaoping , Li, Titao , Han, Xueli , Chen, Duanyang et al. Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication . | APPLIED PHYSICS LETTERS , 2024 , 125 (20) . |
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In this article, the failure behavior and mechanism of p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) in the third quadrant under repetitive surge current stress are investigated. Repetitive stress tests with different surge current peak values I-peak are carried out. At high I-peak , as the stress cycle increases, the evolution of the peak value of surge voltage induced by surge current shows an obvious turning phenomenon and a significant increasing trend. When the surge voltage reaches a certain value, the gate-to-source breakdown occurs, and then, the device is burned out. We propose that the degradation of the third-quadrant conduction characteristics results in the change of surge voltage, and excessive electric field intensity induced by high gate-to-drain voltage V(GD )causes the gate Schottky junction breakdown. It is confirmed by further experiments, electrical performance characterization, and simulation. Inconsistent degradation of the two-dimensional electron gas (2DEG) channel in various regions causes the aforementioned turning phenomenon. As the stress cycle increases, the channel degradation in the gate-to-source/drain access region occupies a dominant position. In this situation, the V-GD increases continuously, which will enhance the tunneling effect at the Schottky junction, until breakdown occurs. Besides, the device shows better surge current reliability at higher gate-to-source voltage. These results provide important insights into the improvement of GaN HEMTs reliability.
Keyword ：
Degradation and failure behavior Degradation and failure behavior failure mechanism failure mechanism p-GaN high-electron-mobility transistors (HEMTs) p-GaN high-electron-mobility transistors (HEMTs) surge current surge current surge voltage surge voltage
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| GB/T 7714 | Wang, Xiaoming , Chen, Wanjun , Sun, Ruize et al. Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2023 , 71 (3) : 1694-1701 . |
| MLA | Wang, Xiaoming et al. "Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 3 (2023) : 1694-1701 . |
| APA | Wang, Xiaoming , Chen, Wanjun , Sun, Ruize , Liu, Chao , Chen, Xinghuan , Xia, Yun et al. Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2023 , 71 (3) , 1694-1701 . |
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