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学者姓名：许晓锐
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Abstract ：
In this work, a novel gallium oxide (Ga2O3) vertical FinFET with integrated Schottky barrier diode (SBD-FinFET), which achieves low conduction losses, is proposed. In the reverse conduction state, the integrated SBD can provide additional low-resistance path to conduct reverse current, hence achieving low reverse conduction loss. In the switching state, the SBD-FinFET can also reduce gate-drain capacitance and gate charge, thus featuring fast switching speed and low switching losses. Furthermore, in the other states, the integrated SBD of the SBD-FinFET is in the OFF state, which does not significantly affect the device characteristics. The well-calibrated simulation results show that when compared with the state-of-the-art FinFET with integrated Fin channel and ohmic contact diode (FOD-FinFET), the SBD-FinFET can reduce reverse conduction loss, turn-on loss, and turn-off loss by 25%, 19%, and 22%, respectively, while other characteristics retain almost unchanged.
Keyword ：
beta-gallium oxide (Ga2O3) beta-gallium oxide (Ga2O3) conduction losses conduction losses Electric breakdown Electric breakdown Field effect transistors Field effect transistors FinFET FinFET FinFETs FinFETs Gallium Gallium Logic gates Logic gates Schottky barrier diode (SBD) Schottky barrier diode (SBD) Schottky barriers Schottky barriers Schottky diodes Schottky diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) : 2530-2535 . |
| MLA | Xu, Xiaorui et al. "Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 4 (2024) : 2530-2535 . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Xu, Xiaohui , Yang, Dan , Zhu, Minmin et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) , 2530-2535 . |
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Abstract ：
A novel design of ultrahigh efficiency and ultralow threshold energy all-optical switches based on local state transition of complete-connected optical waveguide networks (CCOWNs) is proposed. The generation of the ultra-narrow transmission peak and the ultra-strong photonic localization in network is attributed to the mutation of states, which are significant improvements in the performance of all-optical switch. First, the ultra-strong photonic localization induces the Kerr effect in nonlinear material, which transforms the transmission peaks into a transmission valley and results in the super-high efficiency. The efficiency of switch based on CCOWN with 11 unit cell (UC) and each UC possessing 7 nodes was calculated and found to be approximately 1.38×1039, which is 13 orders of magnitude better than previously reported. Furthermore, the ultra-strong photonic localization also leads to the ultralow threshold energy. Calculations reveal that the threshold control energy of all-optical switch based on CCOWN only with 7 UC and each UC possessing 5 nodes is about 5.78×10-30 J, which is 5 orders of magnitude smaller than the best reported results. In addition, fitting formulas for the transmission and switching efficiency with UC number have been derived, and the results show that the switching efficiency increased exponentially with the UC number and nodes. This study not only presents a new model for designing all-optical switch with outstanding performance, but also provides the possibility for further practical use of all-optical switch, while deepening our insight into optical waveguide networks. © The Optical Society of Japan 2024.
Keyword ：
78A50 78A50 78A60 78A60 All-optical switching All-optical switching Nonlinear optics Nonlinear optics Ultrahigh efficiency Ultrahigh efficiency Waveguide network Waveguide network
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| GB/T 7714 | Xu, X. . Ultrahigh efficiency and ultralow threshold energy all-optical switch based on state transition of defective waveguide networks [J]. | Optical Review , 2024 . |
| MLA | Xu, X. . "Ultrahigh efficiency and ultralow threshold energy all-optical switch based on state transition of defective waveguide networks" . | Optical Review (2024) . |
| APA | Xu, X. . Ultrahigh efficiency and ultralow threshold energy all-optical switch based on state transition of defective waveguide networks . | Optical Review , 2024 . |
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Abstract ：
In this Letter, a Ga2O3 vertical Schottky barrier diode (SBD) with self-aligned field plate and mesa termination is fabricated and studied. The combination of field plate and mesa termination can effectively make the electric field distribution uniform in the termination, and thus the proposed SBD features high breakdown voltage (BV). Moreover, to eliminate alignment deviation and simplify the fabrication process, a self-aligned etching process is developed. The experimental results show that a low specific on-resistance of 4.405 mΩ·cm2 and a high BV of 3113 V can be simultaneously derived on the proposed SBD, yielding a high power figure of merit of 2.2 GW/cm2. Meanwhile, a considerably low forward voltage of 1.53 V at 100 A/cm2 is also achieved, demonstrating the low conduction loss of the device. © 2024 Author(s).
Keyword ：
Electric fields Electric fields Etching Etching Gallium compounds Gallium compounds Schottky barrier diodes Schottky barrier diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination [J]. | Applied Physics Letters , 2024 , 125 (2) . |
| MLA | Xu, Xiaorui et al. "Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination" . | Applied Physics Letters 125 . 2 (2024) . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Chen, Duanyang , Wang, Fangzhou , Yu, Cheng et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination . | Applied Physics Letters , 2024 , 125 (2) . |
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In this article, the failure behavior and mechanism of p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) in the third quadrant under repetitive surge current stress are investigated. Repetitive stress tests with different surge current peak values I-peak are carried out. At high I-peak , as the stress cycle increases, the evolution of the peak value of surge voltage induced by surge current shows an obvious turning phenomenon and a significant increasing trend. When the surge voltage reaches a certain value, the gate-to-source breakdown occurs, and then, the device is burned out. We propose that the degradation of the third-quadrant conduction characteristics results in the change of surge voltage, and excessive electric field intensity induced by high gate-to-drain voltage V(GD )causes the gate Schottky junction breakdown. It is confirmed by further experiments, electrical performance characterization, and simulation. Inconsistent degradation of the two-dimensional electron gas (2DEG) channel in various regions causes the aforementioned turning phenomenon. As the stress cycle increases, the channel degradation in the gate-to-source/drain access region occupies a dominant position. In this situation, the V-GD increases continuously, which will enhance the tunneling effect at the Schottky junction, until breakdown occurs. Besides, the device shows better surge current reliability at higher gate-to-source voltage. These results provide important insights into the improvement of GaN HEMTs reliability.
Keyword ：
Degradation and failure behavior Degradation and failure behavior failure mechanism failure mechanism p-GaN high-electron-mobility transistors (HEMTs) p-GaN high-electron-mobility transistors (HEMTs) surge current surge current surge voltage surge voltage
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| GB/T 7714 | Wang, Xiaoming , Chen, Wanjun , Sun, Ruize et al. Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2023 , 71 (3) : 1694-1701 . |
| MLA | Wang, Xiaoming et al. "Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 3 (2023) : 1694-1701 . |
| APA | Wang, Xiaoming , Chen, Wanjun , Sun, Ruize , Liu, Chao , Chen, Xinghuan , Xia, Yun et al. Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2023 , 71 (3) , 1694-1701 . |
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