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学者姓名：贾乐敏
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Abstract ：
Ga2O3 -based solar-blind photodetectors (SBPDs) with typical Schottky structure usually exhibit low responsivity and rapid saturation as reverse bias increase in the lack of avalanche gain. In this study, large-area photosensitive Ga2O3 single-crystalline films were homoepitaxially grown by MOCVD, enabling the fabrication of high-performance SBPDs. At a low bias of -5 V, the device exhibits an ultrahigh photoresponsivity of 27.5 A/W and a photo-to-dark current ratio of 2.4 x 10(5) with an ultralow dark current of 3.74 x 10(-8) A/cm (2) , superior to most similar Ga2O3 SBPDs reported to date. Furthermore, without sacrificing the response speed (t(r) = 100 ns, t(d) = 240.5 mu s), the device attained a peak external quantum efficiency of 1.5 x 10 (4) %. This stems from the ultrahigh photoconductive-like gain caused by significant mobility differences of photogenerated carriers under reverse bias in high-quality Ga2O3 homo-epilayer.
Keyword ：
Dark current Dark current Ga2O3 Ga2O3 Gallium Gallium high gain high gain homoepitaxy homoepitaxy MOCVD MOCVD Performance evaluation Performance evaluation Photoconductivity Photoconductivity Photodiodes Photodiodes Photonic band gap Photonic band gap SBPD SBPD Schottky barriers Schottky barriers Schottky photodiode Schottky photodiode Substrates Substrates X-ray scattering X-ray scattering
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| GB/T 7714 | Zheng, Zhenjie , Lu, Yaoping , Zhuang, Jiachang et al. Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode With Low Dark Current [J]. | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (2) : 143-146 . |
| MLA | Zheng, Zhenjie et al. "Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode With Low Dark Current" . | IEEE ELECTRON DEVICE LETTERS 46 . 2 (2025) : 143-146 . |
| APA | Zheng, Zhenjie , Lu, Yaoping , Zhuang, Jiachang , Jia, Lemin , Zhu, Shoudong , Chen, Duanyang et al. Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode With Low Dark Current . | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (2) , 143-146 . |
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The unclear p-type conduction mechanism and lack of reliable p-type Ga2O3 severely hinder Ga2O3-based high-voltage electronics. Here, we demonstrate in situ nitrogen (N) doping via metal-organic chemical vapor deposition homoepitaxy using N2O as oxygen source and acceptor dopant. Structural and compositional analyses confirm efficient N incorporation (favored by N-Ga bonding) compensating residual Si/H donors without compromising crystallinity. The Ga2O3:N epilayers achieve excellent p-type performance: 1.04 x 1018 cm-3 hole concentration, 0.47 cm2 V-1 s-1 mobility at room temperature, and 0.168 eV activation energy. A completely new insight into the p-type conduction mechanism in Ga2O3 is introduced, focusing on the crystallographic visualization of acceptors (N2-) and holes (O-), as well as the hole excitation process. It is suggested that careful suppression of the donor compensation effect and precise control of the N chemical potential, which leads to the fabrication of trace O- species solid-dissolved within Ga2O3, are essential for achieving high-hole-concentration p-type conduction in oxides.
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| GB/T 7714 | Lu, Yaoping , Jia, Lemin , Chen, Duanyang et al. Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping [J]. | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (17) : 4243-4251 . |
| MLA | Lu, Yaoping et al. "Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping" . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS 16 . 17 (2025) : 4243-4251 . |
| APA | Lu, Yaoping , Jia, Lemin , Chen, Duanyang , Li, Titao , Qi, Hongji , Xu, Xiaorui et al. Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (17) , 4243-4251 . |
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Abstract ：
Monitoring the vacuum ultraviolet (VUV) radiation from the Sun by spaceborne photodetectors is an indispensable and crucial approach in solar physics research and atmospheric photochemistry investigations. Diamond-based photodetectors are emerging as ideal candidates to replace traditional silicon-based detectors for high-selectivity and radiation hardness. Here, a vertical Schottky photodiode based on p-type high-quality single-crystal diamond is presented. By modulating the diamond surface band structure and band alignment, an ultra-short response time of only 15 ns, and a photo-to-dark current ratio greater than 105 under the reverse bias are achieved. It is the first time to study the spectral response of the diamond photodiode in the range of 260 nm to as low as 120 nm under vacuum conditions, exhibiting an ideal selective responsivity and excellent imaging capability in the VUV range. This device holds promising prospects for coupling with optomechanical systems to enable a multidimensional detection of solar VUV radiation, including imaging and spectrum.
Keyword ：
Schottky photodiode Schottky photodiode single-crystal diamond single-crystal diamond ultra-short response time ultra-short response time vacuum ultraviolet imaging vacuum ultraviolet imaging
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| GB/T 7714 | Jia, Lemin , Zhu, Siqi , Zhang, Naiji et al. Ultrafast Diamond Photodiodes for Vacuum Ultraviolet Imaging in Space-Based Applications [J]. | ADVANCED OPTICAL MATERIALS , 2025 , 13 (7) . |
| MLA | Jia, Lemin et al. "Ultrafast Diamond Photodiodes for Vacuum Ultraviolet Imaging in Space-Based Applications" . | ADVANCED OPTICAL MATERIALS 13 . 7 (2025) . |
| APA | Jia, Lemin , Zhu, Siqi , Zhang, Naiji , Lin, Zhuogeng , Cai, Wei , Cheng, Lu et al. Ultrafast Diamond Photodiodes for Vacuum Ultraviolet Imaging in Space-Based Applications . | ADVANCED OPTICAL MATERIALS , 2025 , 13 (7) . |
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The precise control of acceptor doping concentrations in epilayers is critical for fabricating key β-Ga2O3-based power electronic structures, including current-blocking layers, p-type epilayers, and drift layers. Unintentional nitrogen (N) compensating dopants introduced by N2O (a common oxygen precursor) during β-Ga2O3 metalorganic chemical vapor deposition growth significantly affects electrical properties. This study demonstrates that N concentration in epilayers is largely determined by growth temperature and surface adsorption efficiency. As the epitaxial temperature increases, the N doping concentration in the epilayer decreases. When the epitaxial temperature exceeds 1000 °C, the efficiency of N adsorption on β-Ga2O3 surfaces is influenced by both epitaxial parameters and substrate orientation. Modifying epitaxial parameters, especially by increasing chamber pressure, enhances the N concentration in β-Ga2O3 epilayers. Stronger N adsorption occurs on the (100)-plane compared to the (001)-plane epilayer; however, the (001)-plane epilayer allows better N concentration tuning through adjustments in parameters. First-principles calculations indicate that such observed differences in adsorption efficiency are attributable to variations in adsorption energies specific to each plane, coupled with competitive interactions between nitrogen (N) and oxygen (O) atoms during surface reactions. This study offers fundamental insights that advance the engineering of β-Ga2O3 homoepilayers for power electronics applications. © 2025 Author(s).
Keyword ：
Adsorption Adsorption Doping (additives) Doping (additives) Efficiency Efficiency Epilayers Epilayers Epitaxial growth Epitaxial growth Gallium compounds Gallium compounds Nitrogen Nitrogen Oxygen Oxygen Surface reactions Surface reactions
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| GB/T 7714 | Lu, Yaoping , Yang, Ancang , Li, Titao et al. In situ nitrogen doping of β-Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study [J]. | Applied Physics Letters , 2025 , 127 (7) . |
| MLA | Lu, Yaoping et al. "In situ nitrogen doping of β-Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study" . | Applied Physics Letters 127 . 7 (2025) . |
| APA | Lu, Yaoping , Yang, Ancang , Li, Titao , Zhang, Jinxin , Jia, Lemin , Chen, Duanyang et al. In situ nitrogen doping of β-Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study . | Applied Physics Letters , 2025 , 127 (7) . |
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Conventional Ga2O3-based solar-blind photodetectors typically require a high bias voltage for efficient operation, leading to significant energy consumption. To address this, we propose an alternative approach using MOCVDgrown homoepitaxial (3-Ga2O3 thin films on (100) Sn-doped (3-Ga2O3 wafer to develop photodetectors with ultralow bias and high gain. A graphene/ Ga2O3 heterojunction device was fabricated, exhibiting an exceptionally low dark current of 0.1nA and a photocurrent ratio of 104 at -5 V, along with a suppression ratio (R254nm/R405nm) of 1800 at 0 V. By leveraging graphene's carrier-carrier scattering and Ga2O3 ' s UV absorption, the device achieved a responsivity increase from 0.04 mA/W (0 V) to 30 mA/W (-0.5 V), equivalent to a 73944 % enhancement, while the detectivity improved by 1096 %, reaching 2.68 x 1012 Jones. This work provides insights into the development of highly sensitive, low-power solar-blind UV photodetectors.
Keyword ：
Detectivity Detectivity Heterojunction Heterojunction Homoepitaxial Ga 2 O 3 Homoepitaxial Ga 2 O 3 Responsivity Responsivity Solar-blind photodetectors Solar-blind photodetectors
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| GB/T 7714 | Zhuang, Jiachang , Jia, Lemin , Lu, Yaoping et al. High-performance, energy-efficient graphene/Ga2O3 heterojunction solar-blind photodetectors enhanced by carrier-carrier scattering [J]. | OPTICS AND LASER TECHNOLOGY , 2025 , 192 . |
| MLA | Zhuang, Jiachang et al. "High-performance, energy-efficient graphene/Ga2O3 heterojunction solar-blind photodetectors enhanced by carrier-carrier scattering" . | OPTICS AND LASER TECHNOLOGY 192 (2025) . |
| APA | Zhuang, Jiachang , Jia, Lemin , Lu, Yaoping , Zheng, Zhenjie , Li, Titao , Zhu, Shoudong et al. High-performance, energy-efficient graphene/Ga2O3 heterojunction solar-blind photodetectors enhanced by carrier-carrier scattering . | OPTICS AND LASER TECHNOLOGY , 2025 , 192 . |
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Abstract ：
Photovoltaic solar-blind ultraviolet photodetectors (SBPDs) operate independently of an external power source, addressing critical demands in extreme environments, such as forest fire detection and atmospheric ozone layer monitoring. Gallium oxide (Ga2O3) offers significant potential for extreme applications due to its radiation resistance and high-temperature stability. Here, we present a novel homoepitaxy strategy to produce an "atomic smooth" step-flow Ga2O3 photosensitive layer, successfully fabricating device-grade Ga2O3/n+-Ga2O3 homojunctions for photovoltaic SBPDs. These devices exhibit a maximum open-circuit voltage of 1.0 V, an ultrahigh external quantum efficiency of 59.5%, and an ultrafast response time of 100 ns under zero bias, maintaining consistent performance even at 390 K. By implementing a 2D step-flow growth mode, both bulk and interface defects were effectively suppressed, achieving the desired band alignment. Furthermore, the optimized high-quality depletion region formed by the Ga2O3 layer facilitates enhanced carrier drift, resulting in an efficient carrier collection. This work fully explores the potential of Ga2O3 SBPDs for extreme applications and provides an effective design strategy for achieving photovoltaic detectors characterized by zero power consumption, high responsivity, and rapid response.
Keyword ：
Ga2O3 Ga2O3 homoepitaxy homoepitaxy open-circuit voltage open-circuit voltage solar-blind photodetector solar-blind photodetector step-flow step-flow
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| GB/T 7714 | Zhu, Shoudong , Zheng, Zhenjie , Lu, Yaoping et al. Ultrahigh-Performance Photovoltaic Ga2O3 Solar-Blind Ultraviolet Detectors via Two-Dimensional Step-Flow Growth and Drift Region Optimization [J]. | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (34) : 48523-48531 . |
| MLA | Zhu, Shoudong et al. "Ultrahigh-Performance Photovoltaic Ga2O3 Solar-Blind Ultraviolet Detectors via Two-Dimensional Step-Flow Growth and Drift Region Optimization" . | ACS APPLIED MATERIALS & INTERFACES 17 . 34 (2025) : 48523-48531 . |
| APA | Zhu, Shoudong , Zheng, Zhenjie , Lu, Yaoping , Long, Hao , Zhuang, Jiachang , Jia, Lemin et al. Ultrahigh-Performance Photovoltaic Ga2O3 Solar-Blind Ultraviolet Detectors via Two-Dimensional Step-Flow Growth and Drift Region Optimization . | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (34) , 48523-48531 . |
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