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学者姓名：杨丹
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Abstract ：
In this work, a novel gallium oxide (Ga2O3) vertical FinFET with integrated Schottky barrier diode (SBD-FinFET), which achieves low conduction losses, is proposed. In the reverse conduction state, the integrated SBD can provide additional low-resistance path to conduct reverse current, hence achieving low reverse conduction loss. In the switching state, the SBD-FinFET can also reduce gate-drain capacitance and gate charge, thus featuring fast switching speed and low switching losses. Furthermore, in the other states, the integrated SBD of the SBD-FinFET is in the OFF state, which does not significantly affect the device characteristics. The well-calibrated simulation results show that when compared with the state-of-the-art FinFET with integrated Fin channel and ohmic contact diode (FOD-FinFET), the SBD-FinFET can reduce reverse conduction loss, turn-on loss, and turn-off loss by 25%, 19%, and 22%, respectively, while other characteristics retain almost unchanged.
Keyword ：
beta-gallium oxide (Ga2O3) beta-gallium oxide (Ga2O3) conduction losses conduction losses Electric breakdown Electric breakdown Field effect transistors Field effect transistors FinFET FinFET FinFETs FinFETs Gallium Gallium Logic gates Logic gates Schottky barrier diode (SBD) Schottky barrier diode (SBD) Schottky barriers Schottky barriers Schottky diodes Schottky diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) : 2530-2535 . |
| MLA | Xu, Xiaorui et al. "Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 4 (2024) : 2530-2535 . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Xu, Xiaohui , Yang, Dan , Zhu, Minmin et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) , 2530-2535 . |
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High-performance electro-optic (EO) materials greatly enhance modulators and switches in various photonic applications. We investigate the evolution of the tolerance factor (t) and EO coefficient (rc) in A-site and B-site doped BaTiO3 (BT) thin films. Our analysis reveals that cation transmutation has a remarkable impact on their dielectric constant, spontaneous polarization, optical band gap, and EO coefficient. Notably, Pb-doped BT samples exhibit an even higher rc value of 336.5 pm/V, representing a nearly 60% increase compared to pure BT and approximately 11 times larger than that of LiNbO3. This substantial improvement in EO performance can be attributed to enhanced local structural heterogeneity resulting from cation dopants. Furthermore, infusing dopants in BT also result in good structural uniformity and reliable EO performances, regardless of temperature and frequency. Our study offers valuable insights into doping engineering for obtaining functional perovskite oxides, enabling the development of power-efficient, ultra-compact integrated nanophotonic devices.
Keyword ：
barium titanate barium titanate electro-optic electro-optic nanophotonic device nanophotonic device Pockels coefficient Pockels coefficient tolerance factor tolerance factor
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| GB/T 7714 | Zhu, Minmin , Zhang, Xianrong , Wei, Can et al. Chemical design of barium titanate thin films for nanophotonic devices [J]. | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) : 6263-6274 . |
| MLA | Zhu, Minmin et al. "Chemical design of barium titanate thin films for nanophotonic devices" . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY 107 . 9 (2024) : 6263-6274 . |
| APA | Zhu, Minmin , Zhang, Xianrong , Wei, Can , Yi, Xiaoyuan , Yang, Dan , Zhang, Haizhong et al. Chemical design of barium titanate thin films for nanophotonic devices . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) , 6263-6274 . |
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Mainstream high-k gate materials, such as SiO2, Al2O3, and HfZrO2, are in demand for modern electronics. However, these dielectrics possess lower thermal conductivity, significantly limiting thermal dissipation in electronic devices. Herein, we propose the utilization of complementary metal-oxide semiconductor- (CMOS) compatible high power impulse magnetron sputtering (HiPIMS) for the mass production of highly textured hexagonal boron nitride (h-BN) on (100)-, (110)-, and (111)-oriented SrTiO3 substrates. The as-prepared films exhibit distinct vertical alignments, as evidenced by HRTEM and FTIR analysis. Notably, the R value, ranging from 0.46 to 0.50, is associated with the stress in the film. Importantly, distinct anisotropies in thermal conductivity, dielectric constant, and optical band gap are observed. Furthermore, the values of thermal conductivity in these highly textured h-BN films are 4.5, 5.7, and 5.3 Wm- 1K-1, which is almost three times larger than those of SiO2 (1.4 Wm- 1K-1) and Al2O3 (1.35 Wm- 1K-1), and even an order of magnitude larger than that of HfZrO2 (0.67 Wm- 1K-1). The combination of excellent dielectric characteristics, favorable thermal conductivity, and superior stability over a broad temperature range makes this novel material outperform conventional dielectric gate materials in high-power electronics applications.
Keyword ：
Boron nitride thin films Boron nitride thin films Dielectric dispersion Dielectric dispersion Highly textured Highly textured HiPIMS HiPIMS Self-dissipating electronics Self-dissipating electronics Thermal conductivity Thermal conductivity
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| GB/T 7714 | Zhu, Minmin , Shao, Yong , Xin, Yangmei et al. Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics [J]. | VACUUM , 2024 , 225 . |
| MLA | Zhu, Minmin et al. "Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics" . | VACUUM 225 (2024) . |
| APA | Zhu, Minmin , Shao, Yong , Xin, Yangmei , Yang, Dan , Lu, Xiaoqiang , Zhang, Haizhong . Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics . | VACUUM , 2024 , 225 . |
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The next-generation computing system is required to perform 10(18) floating point operations per second to address the exponential growth of data from sensory terminals, driven by advancements in artificial intelligence and the Internet of Things. Even if a supercomputer possesses the capability to execute these operations, managing heat dissipation becomes a significant challenge when the electronic synapse array reaches a comparable scale with the human neuron network. One potential solution to address thermal hotspots in electronic devices is the use of vertically-aligned hexagonal boron nitride (h-BN) known for its high thermal conductivity. In this study, we have developed textured h-BN films using the high power impulse magnetron sputtering technique. The thermal conductivity of the oriented h-BN film is approximately 354% higher than that of the randomly oriented counterpart. By fabricating electronic synapses based on the textured h-BN thin film, we demonstrate various bio-synaptic plasticity in this device. Our results indicate that orientation engineering can effectively enable h-BN to function as a suitable self-heat dissipation layer, thereby paving the way for future wearable memory devices, solar cells, and neuromorphic devices.
Keyword ：
boron nitride boron nitride high thermal conductivity high thermal conductivity low-power memory low-power memory neuromorphic computing neuromorphic computing vertically-aligned vertically-aligned
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| GB/T 7714 | Zhang, Haizhong , Ju, Xin , Jiang, Haitao et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor [J]. | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) : 1907-1914 . |
| MLA | Zhang, Haizhong et al. "Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor" . | SCIENCE CHINA-MATERIALS 67 . 6 (2024) : 1907-1914 . |
| APA | Zhang, Haizhong , Ju, Xin , Jiang, Haitao , Yang, Dan , Wei, Rongshan , Hu, Wei et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor . | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) , 1907-1914 . |
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Highly stretchable and mechanically foldable electronic devices such as photodetectors (PDs) have garnered significant attention in recent years. Nevertheless, existing devices in this category often compromise their photosensitivity and/or response time in order to achieve the desired stretchability. Here we present a novel free -standing stretchable photodetector constructed using electrospun ferroelectric P(VDF-TrFE) nanofibers (NFs) adorned with boron nitride quantum dots (BNQDs). The incorporation of BNQDs leads to a remarkable 160.0 % increase in the Young's modulus of the composite NFs and enhances their strain capacity to an impressive 120 %. Furthermore, it significantly augments the photoresponsivity by 847.8 %, primarily attributable to the abundant trap states present in the BNQDs. Additionally, we discovered a strong dependency of the giant photocurrent (Iph) on the channel length (l), whereby Iph approximate to 1/l2. Notably, our fabricated devices exhibit exceptional stretchability, allowing for up to 100 % strain while maintaining a rapid rise time of approximately 15.6 ms and an expeditious decay time of 12.6 ms. Our findings underscore the significant potential of ferroelectric polymer NFs decorated with BNQDs in the realm of flexible optoelectronic applications.
Keyword ：
Boron nitride quantum dots Boron nitride quantum dots Photodetector Photodetector Photoresponsivity Photoresponsivity P(VDF-TrFE) nanofiber P(VDF-TrFE) nanofiber Stretchability Stretchability
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| GB/T 7714 | Zhu, Minmin , Ren, Fuying , Jiang, Haitao et al. Boron nitride quantum dots-decorated ferroelectric nanofibers for high performance wearable photodetectors [J]. | MATERIALS TODAY NANO , 2023 , 25 . |
| MLA | Zhu, Minmin et al. "Boron nitride quantum dots-decorated ferroelectric nanofibers for high performance wearable photodetectors" . | MATERIALS TODAY NANO 25 (2023) . |
| APA | Zhu, Minmin , Ren, Fuying , Jiang, Haitao , Zhuang, Jiachang , Yang, Dan , Bao, Yiping et al. Boron nitride quantum dots-decorated ferroelectric nanofibers for high performance wearable photodetectors . | MATERIALS TODAY NANO , 2023 , 25 . |
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Thermal rectification (TR) phenomena in carbon nanotubes (CNTs) have been previously foreseen through theoretical predictions; however, its experimental realization in bulk CNT arrays remains relatively unexplored. Herein, we have synthesized vertically aligned carbon nanotube (VACNT) arrays of similar to 4.5 mm in length on a 4-inch silicon wafer by a combined bubble-assisted chemical vapor deposition method. By integrating these VACNT arrays with SnZn alloys, we have successfully developed devices capable of functioning across a wide temperature range spanning from 200 degrees C to 400 degrees C. Notably, the thermal boundary resistances (TBR) between the VACNTs and SnZn alloy exhibit pronounced dependence on the alloy's composition, exhibiting variations ranging from 0.12 cm(2)KW(-1) to 1.12 cm(2)KW(-1). Of particular significance, the TBRs of Sn50Zn50/VACNT compounds in the forward direction were found to fall within the range of 0.63-0.98 cm(2)KW(-1) in the temperature range from120 degrees C to 180 degrees C, while in the backward direction, they exhibited values in the range of 0.13-0.34 cm(2)KW(-1). These contrasting TBR values highlight a marked thermal rectification performance with a substantial TR coefficient between 0.49 and 0.66. Our comprehensive investigation sheds valuable insights into the TR effects within VACNTs and metal/alloy interfaces, presenting a promising avenue for the development of future thermal logic circuits and thermal transistors.
Keyword ：
Bubble-assisted CVD Bubble-assisted CVD SnZn alloys SnZn alloys Thermal boundary resistances Thermal boundary resistances Thermal rectification Thermal rectification VACNT arrays VACNT arrays
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| GB/T 7714 | Zhu, Minmin , Jiang, Haitao , Zhao, Anwen et al. Thermal boundary resistance and thermal rectification in VACNT arrays integrated with SnZn alloys [J]. | JOURNAL OF ALLOYS AND COMPOUNDS , 2023 , 969 . |
| MLA | Zhu, Minmin et al. "Thermal boundary resistance and thermal rectification in VACNT arrays integrated with SnZn alloys" . | JOURNAL OF ALLOYS AND COMPOUNDS 969 (2023) . |
| APA | Zhu, Minmin , Jiang, Haitao , Zhao, Anwen , Chen, Bensong , Ng, Zhi Kai , Yang, Dan et al. Thermal boundary resistance and thermal rectification in VACNT arrays integrated with SnZn alloys . | JOURNAL OF ALLOYS AND COMPOUNDS , 2023 , 969 . |
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