Query：
学者姓名：王伟煌
Refining：
Year
Type
Indexed by
Source
Complex
Co-
Language
Clean All
Abstract ：
Encapsulation is a critical strategy for mitigating the instability of perovskites, which remains the primary challenge for their commercialization. Traditional encapsulation adhesives, such as ethylene vinyl acetate and epoxy resin, are constrained by high-temperature processes and potential chemical reactions that can impair the efficiency of perovskite devices. The use of vacuum silicone grease, primarily composed of polydimethylsiloxane (PDMS), not only shields the perovskite devices from moisture and oxygen but also significantly enhances their power conversion efficiency from 23.91% to 25.34%. Further investigations reveal that this improvement can be attributed to the formation of coordination bonds between the oxygen atoms in PDMS and lead within the perovskite structure. This mechanism boosts efficiency and inhibits the formation of Pb0 defects, significantly contributing to efficiency loss and instability. A ten-fold increase in stability is observed at approximate to 90% humidity, underscoring its potential as a low-temperature, non-damaging, and effective encapsulation method for enhancing the stability and performance of perovskite solar cells.
Keyword ：
defect suppression defect suppression encapsulation encapsulation PDMS PDMS perovskite solar cells perovskite solar cells stability stability
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Wu, Jionghua , Lan, Junxing , Wang, Renjie et al. Low-Temperature Encapsulation with Silicone Grease Enhances Efficiency and Stability of Perovskite Solar Cells via Pb0 Defect Passivation [J]. | ADVANCED FUNCTIONAL MATERIALS , 2025 . |
| MLA | Wu, Jionghua et al. "Low-Temperature Encapsulation with Silicone Grease Enhances Efficiency and Stability of Perovskite Solar Cells via Pb0 Defect Passivation" . | ADVANCED FUNCTIONAL MATERIALS (2025) . |
| APA | Wu, Jionghua , Lan, Junxing , Wang, Renjie , Cheng, Can , Wang, Weihuang , Deng, Hui et al. Low-Temperature Encapsulation with Silicone Grease Enhances Efficiency and Stability of Perovskite Solar Cells via Pb0 Defect Passivation . | ADVANCED FUNCTIONAL MATERIALS , 2025 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
Zinc oxide (ZnO) is used as an electron transport layer (ETL) in inverted organic solar cells (IOSCs) owing to its excellent performance, such as good light transmission and high conductivity, while its surface defects and photocatalytic properties limit the development of IOSCs. Herein, we apply an antioxidant, syringic acid (SA), to modify the surface of ZnO film, which observably improve the efficiency and stability of IOSCs. It is found that SA can effectively passivate the surface defects of ZnO and optimize surface morphology, as well as reduce the work function (WF) of ZnO resulting in an improvement of the charge transport of IOSCs. The power conversion efficiency (PCE) of PM6:Y6-based IOSCs is increased from 16.19 % to 18.18 %, it is the highest PCE values of the single-junction IOSCs based on PM6:Y6 system as reported. Meanwhile, the photostability of the device is markedly improved due to SA could suppress the photocatalytic of ZnO under the ultraviolet aging.
Keyword ：
Photostability' Inverted organic solar cells Photostability' Inverted organic solar cells Surface defects Surface defects Syringic acid Syringic acid Zinc oxide Zinc oxide
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Zheng, Qiao , Guo, Zhaohuang , Zhuang, Jinyong et al. 18.18 % Efficiency of organic solar cells based on PM6:Y6 with Syringic acid modified ZnO [J]. | SURFACES AND INTERFACES , 2025 , 65 . |
| MLA | Zheng, Qiao et al. "18.18 % Efficiency of organic solar cells based on PM6:Y6 with Syringic acid modified ZnO" . | SURFACES AND INTERFACES 65 (2025) . |
| APA | Zheng, Qiao , Guo, Zhaohuang , Zhuang, Jinyong , Zhou, Ziqi , Wu, Jionghua , Deng, Hui et al. 18.18 % Efficiency of organic solar cells based on PM6:Y6 with Syringic acid modified ZnO . | SURFACES AND INTERFACES , 2025 , 65 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
Antimony sulfide (Sb2S3) thin film have a suitable band gap (1.73 eV) and high absorption coefficient, indicating potential prospects in indoor photovoltaics. The open-circuit voltage (VOC) attenuation under indoor weak light limits the performance and application, which is affected by the heterojunction interface quality. Hence, we propose a hole transport layer free Sb2S3 indoor photovoltaic cell using Li-doped TiO2 as the electron transport layer to overcome weak-light VOC loss. The Li-doped TiO2 films prepared by spray pyrolysis LiCl additive precursor reveal higher surface potentials, enhancing electron collections. The doped interface also promoted subsequent grain growth of Sb2S3 thin film. The champion device, configured as FTO/TiO2:Li/Sb2S3/Au, achieves an efficiency of 6.12% with an optimal Li doping ratio of 8% in the TiO2 layer. The Li introduction at the junction interface suppresses the photocarrier recombinations under indoor light, thus improving device performance. The indoor power conversion efficiency of the Li-TiO2 based Sb2S3 device reaches 12.7% under the irradiation of 1000-lux LED, showing 48% improvement compared with the undoped device. The Li-doped TiO2/Sb2S3 photovoltaic device demonstrates significant advantages, particularly in cold and monochromatic light conditions, opening new prospects for indoor application.
Keyword ：
conversion efficiency conversion efficiency indoor photovoltaics indoor photovoltaics Li-doped TiO2 Li-doped TiO2 Sb2S3 Sb2S3 VOC improvement VOC improvement
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Wu, Kefei , Deng, Hui , Feng, Xinxin et al. Suppressing weak-light voltage attenuation in Sb2S3 indoor photovoltaics using Li-doped TiO2 layer [J]. | NANO RESEARCH , 2025 , 18 (10) . |
| MLA | Wu, Kefei et al. "Suppressing weak-light voltage attenuation in Sb2S3 indoor photovoltaics using Li-doped TiO2 layer" . | NANO RESEARCH 18 . 10 (2025) . |
| APA | Wu, Kefei , Deng, Hui , Feng, Xinxin , Hong, Jinwei , Wang, Guidong , Ishaq, Muhammad et al. Suppressing weak-light voltage attenuation in Sb2S3 indoor photovoltaics using Li-doped TiO2 layer . | NANO RESEARCH , 2025 , 18 (10) . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
The crystallization process plays a decisive role in fabricating efficient and flexible Cu2ZnSn(S, Se)4 (CZTSSe) thin film solar cells (TFSCs). However, the unknown difference of crystallization kinetics of CZTSSe films by different solution systems remains to be distinguished for efficient and flexible CZTSSe TFSCs. In this work, based on mainstream amine-thiol (AT) and 2-methoxyethanol (C3H8O2, MOE) solution systems, the crystallization kinetics of CZTSSe films and the photoelectronic properties of relevant flexible devices are well compared and studied. The results show that AT solution processed CZTSSe films form a bi-layer structure with bottom small grains under unidirectional grain growth mode, whereas there are large CZTSSe grains throughout the MOE solution processed CZTSSe film under bidirectional grain growth mode. In addition, significant composition deviation, undesirable band gap alignment, and carbon residues except for excellent flexibility and mechanical durability can be found in CZTSSe-AT films, while CZTSSe-MOE films possess well compositional uniformity, desirable band gap alignment and consistency with precursor solution. Finally, better heterojunction quality, lower interfacial defects concentration, free of direct carrier recombination path, smaller quasi neutral region width and fewer copper vacancy (VCu) defects lead to an evident increase of the short-circuit current density (JSC) for TFSC-MOE by 14.26%, which demonstrates a better carrier transportation and extraction ability. Meanwhile, the power conversion efficiency of MOE processed flexible CZTSSe TFSCs (9.92%) is enhanced by 8% compared to that of AT processed ones (9.18%). These results can offer a deeper understanding on crystallization kinetics of CZTSSe films, and offer solid theoretical reference for future efficient flexible CZTSSe TFSCs.
Keyword ：
crystallization kinetics crystallization kinetics Cu2ZnSn(S, Se)4 Cu2ZnSn(S, Se)4 flexible flexible selenization selenization thin film solar cells thin film solar cells
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Li, Yifan , Sun, Quanzhen , Xie, Weihao et al. Study on the crystallization kinetics variation induced by disparate liquid system: Leading to efficient carrier transportation of flexible CZTSSe solar cells [J]. | NANO RESEARCH , 2025 , 18 (10) . |
| MLA | Li, Yifan et al. "Study on the crystallization kinetics variation induced by disparate liquid system: Leading to efficient carrier transportation of flexible CZTSSe solar cells" . | NANO RESEARCH 18 . 10 (2025) . |
| APA | Li, Yifan , Sun, Quanzhen , Xie, Weihao , Zhang, Caixia , Deng, Hui , Wang, Weihuang et al. Study on the crystallization kinetics variation induced by disparate liquid system: Leading to efficient carrier transportation of flexible CZTSSe solar cells . | NANO RESEARCH , 2025 , 18 (10) . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
The optimization of the back interface is an important means of improving the power conversion efficiency (PCE) of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Here, a CuO sacrificial layer is introduced into the Mo/CZTSSe back interface to improve device efficiency. The insertion of the CuO sacrificial layer inhibits the formation of Sn(S,Se)2 secondary phases in the CZTSSe film. Meanwhile, the interfacial trap state (N IT) is reduced by about 22%. Furthermore, the 75 nm CuO sacrificial layer can reduce the thickness of the MoSe2 layer, leading to a 33.18 meV reduction in the back interfacial barrier. This design enhances the back interfacial transport characteristics and suppresses defects. Finally, the flexible CZTSSe solar cell achieve the efficiency of 10.57%.
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Su, Zhenyi , Xie, Weihao , Sun, Quanzhen et al. Overcoming Back Interfacial Barrier Improves Flexible Cu2ZnSn(S,Se)4 Solar Cell Efficiency via CuO Sacrificial Layers [J]. | ACS MATERIALS LETTERS , 2025 , 7 (4) : 1329-1335 . |
| MLA | Su, Zhenyi et al. "Overcoming Back Interfacial Barrier Improves Flexible Cu2ZnSn(S,Se)4 Solar Cell Efficiency via CuO Sacrificial Layers" . | ACS MATERIALS LETTERS 7 . 4 (2025) : 1329-1335 . |
| APA | Su, Zhenyi , Xie, Weihao , Sun, Quanzhen , Li, Yifan , Zhong, Zhipan , Wang, Weihuang et al. Overcoming Back Interfacial Barrier Improves Flexible Cu2ZnSn(S,Se)4 Solar Cell Efficiency via CuO Sacrificial Layers . | ACS MATERIALS LETTERS , 2025 , 7 (4) , 1329-1335 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
2D perovskite materials are ideal candidates for indoor photovoltaic (IPV) applications due to their tunable bandgap, high absorption coefficients, and enhanced stability. However, attaining uniform crystallization and overcoming low carrier mobility remain key challenges for 2D perovskites, limiting their overall performance. In this study, a 2D perovskite light-absorbing layer is constructed using a Dion-Jacobson (DJ)-phase EDA(FA)(4)Pb5I16 (n = 5) and introduced butylammonium iodide (BAI) for interface modification, thereby creating a novel DJ/Ruddlesden-Popper (RP) dual 2D perovskite heterostructure. By adjusting the thickness of the BAI-based perovskite layer, the relationship between interfacial defect states and carrier mobility is investigated under varying indoor light intensities. The results indicate that, by achieving a balance between interfacial defect passivation and carrier transport, the optimized 2D perovskite device reaches a power conversion efficiency (PCE) of 30.30% and an open-circuit voltage (V-OC) of 936 mV under 1000 lux (3000 K LED). 2D-DJ/RP perovskite IPV exhibits a twentyfold increase in T-90 lifetime compared to 3D perovskite devices. It is the first time to systematically study 2D perovskites in IPV applications, demonstrating that rationally designed and optimized 2D perovskites hold significant potential for fabricating high-performance indoor PSCs.
Keyword ：
2D perovskite solar cells 2D perovskite solar cells carrier transport carrier transport defect passivation defect passivation dual-phase 2D perovskite heterostructures dual-phase 2D perovskite heterostructures indoor photovoltaic indoor photovoltaic
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Wang, Renjie , Wu, Jionghua , Zheng, Qiao et al. Stable and Efficient Indoor Photovoltaics Through Novel Dual-Phase 2D Perovskite Heterostructures [J]. | ADVANCED MATERIALS , 2025 , 37 (18) . |
| MLA | Wang, Renjie et al. "Stable and Efficient Indoor Photovoltaics Through Novel Dual-Phase 2D Perovskite Heterostructures" . | ADVANCED MATERIALS 37 . 18 (2025) . |
| APA | Wang, Renjie , Wu, Jionghua , Zheng, Qiao , Deng, Hui , Wang, Weihuang , Chen, Jing et al. Stable and Efficient Indoor Photovoltaics Through Novel Dual-Phase 2D Perovskite Heterostructures . | ADVANCED MATERIALS , 2025 , 37 (18) . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
A favorable back contact interface is essential for obtaining efficient flexible Cu2ZnSn(S, Se)4 (CZTSSe) thin film solar cells. Here, Mo/CZTSSe back interfaces are improved by treating Mo foil substrates with a plasma method. MoO3 layers are generated on the Mo foils substrates with the plasma treatment, enhancing the wettability of the substrate surfaces and thus promoting the grain growth of the CZTSSe films. The contact resistance and barrier height (Phi B) at the Mo/CZTSSe interface is decreased, enhancing the transport of the hole carrier. Moreover, the quality of the CZTSSe/CdS heterojunction is significantly improved owing to the modified CZTSSe absorber. Ultimately, the flexible CZTSSe solar cell has achieved a power conversion efficiency (PCE) of 10.59 % without antireflection coating. Benefiting from the positive modification at Mo/CZTSSe interface, the PCE of the flexible device still maintains 95.87 % of the initial PCE after bending 5000 times at the bending diameter of 2 cm. This simple and effective way of optimizing the back interface provides a new direction for the PCE improvement of the flexible CZTSSe solar cells.
Keyword ：
Barrier height Barrier height Carrier transmission Carrier transmission Flexible CZTSSe solar cell Flexible CZTSSe solar cell Mo/CZTSSe back interface Mo/CZTSSe back interface Plasma treatment Plasma treatment
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Zhang, Caixia , Xu, Wen , Sun, Quanzhen et al. Plasma treatment modifying back interface to achieve flexible Cu2ZnSn(S, Se)4 solar cells with 10.59% efficiency [J]. | APPLIED SURFACE SCIENCE , 2025 , 692 . |
| MLA | Zhang, Caixia et al. "Plasma treatment modifying back interface to achieve flexible Cu2ZnSn(S, Se)4 solar cells with 10.59% efficiency" . | APPLIED SURFACE SCIENCE 692 (2025) . |
| APA | Zhang, Caixia , Xu, Wen , Sun, Quanzhen , Zhong, Zhipan , Xie, Weihao , Li, Yifan et al. Plasma treatment modifying back interface to achieve flexible Cu2ZnSn(S, Se)4 solar cells with 10.59% efficiency . | APPLIED SURFACE SCIENCE , 2025 , 692 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
The structural design of n-i-p in antimony selenide (Sb2Se3) thin film solar cells can effectively improve the low carrier collection efficiency caused by the lower doping concentration of Sb2Se3. However, the unideal carrier transport ability of the intrinsic light-absorbing layer remains a major limitation for its power conversion efficiency improvement. Herein, it is discovered that the carrier transport in Sb2Se3 thin films strongly depends on the film thickness of the absorber layer in n-i-p structure. By exploring the carrier transport mechanism under different thicknesses of light-absorbing layers, a suitable absorber layer with thickness of 550 nm is demonstrated can effectively separate, transport, and extract photogenerated carriers in Sb2Se3 solar cells. Finally, the vapor transport deposition processed Sb2Se3 solar cells achieve the highest PCE of 7.62% with a short-circuit current density of 30.71 mAcm(-2). This finding provides a constructive guidance for the future researches on Sb2Se3 thin film solar cells with n-i-p structure.
Keyword ：
n-i-p structure n-i-p structure Sb2Se3 solar cell Sb2Se3 solar cell Thickness-dependent carrier transport Thickness-dependent carrier transport Vapor transport deposition Vapor transport deposition
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Cao, Zi-Xiu , Liu, Chuan-Yu , Li, Jian-Peng et al. Thickness-dependent carriers transport in Sb2Se3 thin film solar cells [J]. | RARE METALS , 2025 , 44 (5) : 3051-3059 . |
| MLA | Cao, Zi-Xiu et al. "Thickness-dependent carriers transport in Sb2Se3 thin film solar cells" . | RARE METALS 44 . 5 (2025) : 3051-3059 . |
| APA | Cao, Zi-Xiu , Liu, Chuan-Yu , Li, Jian-Peng , Dong, Jia-Bin , Hu, Shi-Hao , Wang, Wei-Huang et al. Thickness-dependent carriers transport in Sb2Se3 thin film solar cells . | RARE METALS , 2025 , 44 (5) , 3051-3059 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
High performances of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells are heavily influenced by the quality of heterojunctions. Herein, an oxygen (O) doping of CZTSSe/CdS heterojunction is performed to suppress the formation of the defects by an ultraviolet ozone (UV-O3) treatment for the efficient flexible CZTSSe solar cells. The introduction of O reduces the non-radiative recombination and increases the carrier concentration of the CdS films. Furthermore, the defect density of the CdS film has been reduced from 8.24 x 1016 to 2.91 x 1016 cm-3 by the O-doping. The results indicate that the electron transport is effectively promoted due to the decreased conduction band offset (CBO) at the heterojunction interface. As a result, the champion flexible CZTSSe solar cell achieves a power conversion efficiency (PCE) of 11.21%, with a significantly improved short circuit current density. The study for improving the CZTSSe/CdS heterojunction through O-doping treatment provides a new insight for enhancing the PCE of the flexible CZTSSe solar cells. (c) 2025 Science Press and Dalian Institute of Chemical Physics, Chinese Academy of Sciences. Published by Elsevier B.V. and Science Press. All rights are reserved, including those for text and data mining, AI training, and similar technologies.
Keyword ：
Flexible CZTSSe solar cells Flexible CZTSSe solar cells O -doping O -doping Sulfur vacancy defects passivation Sulfur vacancy defects passivation UV-O 3 treatment UV-O 3 treatment
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Zhang, Yuheng , Wang, Weihuang , Sun, Quanzhen et al. Flexible CZTSSe solar cells with 11.21% efficiency enabled by O-doped CZTSSe/CdS heterojunction [J]. | JOURNAL OF ENERGY CHEMISTRY , 2025 , 105 : 806-813 . |
| MLA | Zhang, Yuheng et al. "Flexible CZTSSe solar cells with 11.21% efficiency enabled by O-doped CZTSSe/CdS heterojunction" . | JOURNAL OF ENERGY CHEMISTRY 105 (2025) : 806-813 . |
| APA | Zhang, Yuheng , Wang, Weihuang , Sun, Quanzhen , Xie, Weihao , Li, Yifan , Su, Zhenyi et al. Flexible CZTSSe solar cells with 11.21% efficiency enabled by O-doped CZTSSe/CdS heterojunction . | JOURNAL OF ENERGY CHEMISTRY , 2025 , 105 , 806-813 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
Antimony selenosulfide (Sb2(S,Se)3) solar cells suffer from charge carrier loss, which has limited the power conversion efficiency to around 10%. Here we develop a charge carrier management strategy using a textured fluorine-doped tin oxide substrate as the front contact to enhance light scattering and maximize charge generation. To overcome voids and shunt paths introduced by the textured surface, we insert a SnO2 layer by atomic layer deposition at the textured fluorine-doped tin oxide/CdS interface. This results in a conformal deposition of CdS and an optimal bandgap profile in the Sb2(S,Se)3 absorber, which improves charge transport and lowers charge recombination at the interface and in the bulk, respectively. We achieve a certified efficiency of 10.70% sodium selenosulfate-based Sb2(S,Se)3 solar cells with excellent stability. We prove the generality of the method demonstrating selenourea-based Sb2(S,Se)3 and upscaling the solar cells to 1 cm2. The results represent a step forward in the development of antimony-based solar cells.
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Dong, Jiabin , Gao, Qianqian , Wu, Li et al. Carrier management through electrode and electron-selective layer engineering for 10.70% efficiency antimony selenosulfide solar cells [J]. | NATURE ENERGY , 2025 , 10 (7) . |
| MLA | Dong, Jiabin et al. "Carrier management through electrode and electron-selective layer engineering for 10.70% efficiency antimony selenosulfide solar cells" . | NATURE ENERGY 10 . 7 (2025) . |
| APA | Dong, Jiabin , Gao, Qianqian , Wu, Li , Yang, Junjie , Liu, Huizhen , Wang, Weihuang et al. Carrier management through electrode and electron-selective layer engineering for 10.70% efficiency antimony selenosulfide solar cells . | NATURE ENERGY , 2025 , 10 (7) . |
| Export to | NoteExpress RIS BibTex |
Version ：
Export
| Results： |
Selected to |
| Format： |
