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学者姓名：李悌涛
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Brain-inspired neuromorphic sensory devices play a crucial role in addressing the limitations of von Neumann systems in contemporary computing. Currently, synaptic devices rely on memristors and thin-film transistors, requiring the establishment of a read voltage. A built-in electric field exists within the p-n junction, enabling the operation of zero-read-voltage synaptic devices. In this study, we propose an artificial synapse utilizing a ZnO diode. Typical rectification curves characterize the formation of ZnO diodes. ZnO diodes demonstrate distinct synaptic properties, including paired-pulse facilitation, paired-pulse depression, long-term potentiation, and long-term depression modulations, with a read voltage of 0 V. An artificial neural network is constructed to simulate recognition tasks using MNIST and Fashion-MNIST databases, achieving test accuracy values of 92.36% and 76.71%, respectively. This research will pave the way for advancing zero-read-voltage artificial synaptic diodes for neural network computing.
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| GB/T 7714 | Yang, Ruqi , Li, Titao , Hu, Dunan et al. ZnO-based artificial synaptic diodes with zero-read voltage for neural network computing [J]. | APPLIED PHYSICS LETTERS , 2024 , 125 (17) . |
| MLA | Yang, Ruqi et al. "ZnO-based artificial synaptic diodes with zero-read voltage for neural network computing" . | APPLIED PHYSICS LETTERS 125 . 17 (2024) . |
| APA | Yang, Ruqi , Li, Titao , Hu, Dunan , Chen, Qiujiang , Lu, Bin , Huang, Feng et al. ZnO-based artificial synaptic diodes with zero-read voltage for neural network computing . | APPLIED PHYSICS LETTERS , 2024 , 125 (17) . |
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This research employs first-principles calculations to address the challenges presented by processing complexity and low damage tolerance in transition metal borides. The study focuses on designing and investigating MAB phase compounds of M4AlB4 (M = Cr, Mo, W). We conduct a comprehensive assessment of the stability, phononic, electronic, elastic, and optical properties of Cr4AlB4, Mo4AlB4, and W4AlB4. The calculated results reveal formation enthalpies of -0.516, -0.490, and -0.336 eV per atom for Cr4AlB4, Mo4AlB4, and W4AlB4, respectively. Notably, W4AlB4 emerges as a promising precursor material for MABene synthesis, demonstrating exceptional thermal shock resistance. The dielectric constants epsilon(1)(0) were determined as 126.466, 80.277, and 136.267 for Cr4AlB4, Mo4AlB4, and W4AlB4, respectively. Significantly, W4AlB4 exhibits remarkably high reflectivity (>80%) within the wavelength range of 19.84-23.6 nm, making it an ideal candidate for extreme ultraviolet (EUV) reflective coatings. The insights gleaned from this study provide a strong research framework and theoretical guidance for advancing the synthesis of innovative MAB-phase compounds.
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| GB/T 7714 | Lu, Yaoping , Li, Titao , Li, Kangjie et al. Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W) [J]. | RSC ADVANCES , 2024 , 14 (2) : 1186-1194 . |
| MLA | Lu, Yaoping et al. "Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W)" . | RSC ADVANCES 14 . 2 (2024) : 1186-1194 . |
| APA | Lu, Yaoping , Li, Titao , Li, Kangjie , Hao, Derek , Chen, Zuxin , Zhang, Haizhong . Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W) . | RSC ADVANCES , 2024 , 14 (2) , 1186-1194 . |
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In this work, a novel gallium oxide (Ga2O3) vertical FinFET with integrated Schottky barrier diode (SBD-FinFET), which achieves low conduction losses, is proposed. In the reverse conduction state, the integrated SBD can provide additional low-resistance path to conduct reverse current, hence achieving low reverse conduction loss. In the switching state, the SBD-FinFET can also reduce gate-drain capacitance and gate charge, thus featuring fast switching speed and low switching losses. Furthermore, in the other states, the integrated SBD of the SBD-FinFET is in the OFF state, which does not significantly affect the device characteristics. The well-calibrated simulation results show that when compared with the state-of-the-art FinFET with integrated Fin channel and ohmic contact diode (FOD-FinFET), the SBD-FinFET can reduce reverse conduction loss, turn-on loss, and turn-off loss by 25%, 19%, and 22%, respectively, while other characteristics retain almost unchanged.
Keyword ：
beta-gallium oxide (Ga2O3) beta-gallium oxide (Ga2O3) conduction losses conduction losses Electric breakdown Electric breakdown Field effect transistors Field effect transistors FinFET FinFET FinFETs FinFETs Gallium Gallium Logic gates Logic gates Schottky barrier diode (SBD) Schottky barrier diode (SBD) Schottky barriers Schottky barriers Schottky diodes Schottky diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) : 2530-2535 . |
| MLA | Xu, Xiaorui et al. "Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 4 (2024) : 2530-2535 . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Xu, Xiaohui , Yang, Dan , Zhu, Minmin et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) , 2530-2535 . |
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In this Letter, a Ga2O3 vertical Schottky barrier diode (SBD) with self-aligned field plate and mesa termination is fabricated and studied. The combination of field plate and mesa termination can effectively make the electric field distribution uniform in the termination, and thus the proposed SBD features high breakdown voltage (BV). Moreover, to eliminate alignment deviation and simplify the fabrication process, a self-aligned etching process is developed. The experimental results show that a low specific on-resistance of 4.405 mΩ·cm2 and a high BV of 3113 V can be simultaneously derived on the proposed SBD, yielding a high power figure of merit of 2.2 GW/cm2. Meanwhile, a considerably low forward voltage of 1.53 V at 100 A/cm2 is also achieved, demonstrating the low conduction loss of the device. © 2024 Author(s).
Keyword ：
Electric fields Electric fields Etching Etching Gallium compounds Gallium compounds Schottky barrier diodes Schottky barrier diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination [J]. | Applied Physics Letters , 2024 , 125 (2) . |
| MLA | Xu, Xiaorui et al. "Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination" . | Applied Physics Letters 125 . 2 (2024) . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Chen, Duanyang , Wang, Fangzhou , Yu, Cheng et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination . | Applied Physics Letters , 2024 , 125 (2) . |
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Ga2O3-based solar-blind photodetectors (SBPDs) with typical Schottky structure usually exhibit low responsivity and rapid saturation as reverse bias increase in the lack of avalanche gain. In this study, large-area photosensitive Ga2O3 single-crystalline films were homoepitaxially grown by MOCVD, enabling the fabrication of high-performance SBPDs. At a low bias of -5 V, the device exhibits an ultrahigh photoresponsivity of 27.5 A/W and a photo-to-dark current ratio of 2.4 × 105 with an ultralow dark current of 3.74 × 10-8 A/cm2, superior to most similar Ga2O3 SBPDs reported to date. Furthermore, without sacrificing the response speed (tr = 100 ns, td = 240.5 μs), the device attained a peak external quantum efficiency of 1.5 × 104%. This stems from the ultrahigh photoconductive-like gain caused by significant mobility differences of photogenerated carriers under reverse bias in high-quality Ga2O3 homo-epilayer. © 2024 IEEE.
Keyword ：
Ga2O3 Ga2O3 high gain high gain homoepitaxy homoepitaxy SBPD SBPD Schottky photodiode Schottky photodiode
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| GB/T 7714 | Zheng, Z. , Lu, Y. , Zhuang, J. et al. Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode with Low Dark Current [J]. | IEEE Electron Device Letters , 2024 , 46 (2) : 143-146 . |
| MLA | Zheng, Z. et al. "Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode with Low Dark Current" . | IEEE Electron Device Letters 46 . 2 (2024) : 143-146 . |
| APA | Zheng, Z. , Lu, Y. , Zhuang, J. , Jia, L. , Zhu, S. , Chen, D. et al. Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode with Low Dark Current . | IEEE Electron Device Letters , 2024 , 46 (2) , 143-146 . |
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In this Letter, a high-quality and high-resistivity nitrogen (N)-doped Ga2O3 current blocking layer (CBL) is grown utilizing metal-organic chemical vapor deposition homoepitaxial technology. By using nitrous oxide (N2O) as oxygen source for Ga2O3 growth and N source for doping and controlling the growth temperature, the grown CBL can effectively achieve high (similar to 10(19) cm(-3)) or low (similar to 10(17) cm-3) N doping concentrations, as well as high crystal quality. Furthermore, the electrical properties of the developed CBL are verified at the device level, which shows that the device using the CBL can withstand bidirectional voltages exceeding 3.5 kV with very low leakage (<= 1 x 10(-4) A/cm2). This work can pave the way for the realization of high-voltage and low-leakage Ga2O3 vertical devices, especially metal-oxide-semiconductor field effect transistors.
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| GB/T 7714 | Xu, Xiaorui , Chen, Desen , Lu, Yaoping et al. Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication [J]. | APPLIED PHYSICS LETTERS , 2024 , 125 (20) . |
| MLA | Xu, Xiaorui et al. "Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication" . | APPLIED PHYSICS LETTERS 125 . 20 (2024) . |
| APA | Xu, Xiaorui , Chen, Desen , Lu, Yaoping , Li, Titao , Han, Xueli , Chen, Duanyang et al. Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication . | APPLIED PHYSICS LETTERS , 2024 , 125 (20) . |
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In this work, t he i nfluence o f d ifferent s urface treatments on the breakdown voltage (BV) and the specific on-state resistance (R-on,R-sp) of the beta-phase gallium oxide (beta-Ga2O3) Schottky barrier diodes (SBD) is investigated. The results show that after fast inductively coupled plasma (ICP) etching, slow ICP etching and piranha treatment, the unreliable surface of beta-Ga2O3 can be effectively removed with small surface roughness and little co-products, thus increasing BV from 141 V to 724 V and reducing R-on,R- sp from 5.1 m Omega center dot cm(2) to 1.2 m Omega center dot cm(2). Consequently, the results validate the effectiveness of the surface treatments and can provide guidance for device process optimization.
Keyword ：
Beta-phase gallium oxide Beta-phase gallium oxide Inductively coupled plasma etching Inductively coupled plasma etching Schottky barrier diode Schottky barrier diode Surface quality Surface quality
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Ye, Shurui et al. Demonstration of Surface Treatment for β-Ga2O3 Schottky Barrier Diode with High Breakdown Voltage and Low Specific On-Resistance [J]. | 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 , 2024 : 240-243 . |
| MLA | Xu, Xiaorui et al. "Demonstration of Surface Treatment for β-Ga2O3 Schottky Barrier Diode with High Breakdown Voltage and Low Specific On-Resistance" . | 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 (2024) : 240-243 . |
| APA | Xu, Xiaorui , Deng, Yicong , Ye, Shurui , Chen, Desen , Li, Titao , Zhu, Minmin et al. Demonstration of Surface Treatment for β-Ga2O3 Schottky Barrier Diode with High Breakdown Voltage and Low Specific On-Resistance . | 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 , 2024 , 240-243 . |
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The ultra-wide bandgap (similar to 6.2 eV), thermal stability and radiation tolerance of AlN make it an ideal choice for preparation of high-performance far-ultraviolet photodetectors (FUV PDs). However, the challenge of epitaxial crack-free AlN single-crystalline films (SCFs) on GaN templates with low defect density has limited its practical applications in vertical devices. Here, a novel preparation strategy of high-quality AlN films was proposed via the metal organic chemical vapor deposition (MOCVD) technique. Cross-sectional transmission electron microscopy (TEM) studies clearly indicate that sharp, crack-free AlN films in single-crystal configurations were achieved. We also constructed a p-graphene/i-AlN/n-GaN photovoltaic FUV PD with excellent spectral selectivity for the FUV/UV-C rejection ratio of >10(3), a sharp cutoff edge at 206 nm and a high responsivity of 25 mA/W. This work provides an important reference for device design of AN materials for high-performance FUV PDs.
Keyword ：
AlN AlN far-ultraviolet photodetection far-ultraviolet photodetection heteroepitaxy heteroepitaxy MOCVD MOCVD single crystalline films single crystalline films
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| GB/T 7714 | Li, Titao , Lu, Yaoping , Chen, Zuxin . Heteroepitaxy Growth and Characterization of High-Quality AlN Films for Far-Ultraviolet Photodetection [J]. | NANOMATERIALS , 2022 , 12 (23) . |
| MLA | Li, Titao et al. "Heteroepitaxy Growth and Characterization of High-Quality AlN Films for Far-Ultraviolet Photodetection" . | NANOMATERIALS 12 . 23 (2022) . |
| APA | Li, Titao , Lu, Yaoping , Chen, Zuxin . Heteroepitaxy Growth and Characterization of High-Quality AlN Films for Far-Ultraviolet Photodetection . | NANOMATERIALS , 2022 , 12 (23) . |
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