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学者姓名：韩玉磊
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Kagome superconductors AV(3)Sb(5) (A = K, Rb and Cs) have attracted much recent attention due to the coexistence of multiple exotic orders. Among them, the charge density wave (CDW) order has been shown to host various unconventional behaviors. Here, we investigate the CDW order by a combination of both bulk and surface doping methods. While element substitutions in bulk doping change both carriers and the crystal lattice, the surface doping primarily tunes the carrier concentration. As such, our results reveal a two-dimensional phase diagram of the CDW in doped CsV3Sb5. In the lightly bulk doped regime, the existence of CDW order is reversible by tuning the carrier concentration. But excessive bulk doping permanently destroys the CDW, regardless of the carrier doping level. These results provide insights to the origin of the CDW from both electronic and structural degrees of freedom. They also open an avenue for manipulating the exotic CDW order in Kagome superconductors.
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| GB/T 7714 | Huai, Linwei , Li, Hongyu , Han, Yulei et al. Two-dimensional phase diagram of the charge density wave in doped CsV3Sb5 [J]. | NPJ QUANTUM MATERIALS , 2024 , 9 (1) . |
| MLA | Huai, Linwei et al. "Two-dimensional phase diagram of the charge density wave in doped CsV3Sb5" . | NPJ QUANTUM MATERIALS 9 . 1 (2024) . |
| APA | Huai, Linwei , Li, Hongyu , Han, Yulei , Luo, Yang , Peng, Shuting , Wei, Zhiyuan et al. Two-dimensional phase diagram of the charge density wave in doped CsV3Sb5 . | NPJ QUANTUM MATERIALS , 2024 , 9 (1) . |
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Quantum anomalous Hall (QAH) insulators exhibit chiral edge channels characterized by vanishing longitudinal conductance and quantized Hall conductance of Ce2/h, wherein the Chern number C is an integer equal to the number of the parallel chiral edge channels. These chiral edge channels conduct dissipationless transport in QAH insulators, making them pivotal for applications in low-consumption electronics and topological quantum computing. While the QAH effect with multiple chiral edge channels (i.e., C > 1) has been demonstrated in multilayers consisting of magnetic topological insulators and normal insulators, the channel number remains fixed for a given sample. Here, we unveil the tunability of the number of chiral edge channels within a single QAH insulator device. By tuning the magnetization of individual layers within the multilayer system, Chern insulating states with different Chern numbers are unveiled. The tunable Chern number was corroborated by our theoretical calculations. Furthermore, we conducted layer-dependent calculations to elucidate the contribution of the Chern number from different layers in the multilayer. Our findings demonstrate an extra degree of freedom in manipulating the chiral edge channels in QAH insulators. This tunability offers an extra dimension for the implementation of the QAH-based multichannel dissipationless transport. © 2024 American Physical Society.
Keyword ：
Degrees of freedom (mechanics) Degrees of freedom (mechanics) Multilayers Multilayers Quantum chemistry Quantum chemistry Quantum computers Quantum computers Quantum Hall effect Quantum Hall effect Topology Topology Tuning Tuning
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| GB/T 7714 | Deng, Peng , Han, Yulei , Zhang, Peng et al. Tuning the number of chiral edge channels in a fixed quantum anomalous Hall system [J]. | Physical Review B , 2024 , 109 (20) . |
| MLA | Deng, Peng et al. "Tuning the number of chiral edge channels in a fixed quantum anomalous Hall system" . | Physical Review B 109 . 20 (2024) . |
| APA | Deng, Peng , Han, Yulei , Zhang, Peng , Chong, Su Kong , Qiao, Zhenhua , Wang, Kang L. . Tuning the number of chiral edge channels in a fixed quantum anomalous Hall system . | Physical Review B , 2024 , 109 (20) . |
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Since the first report on single-layer MoS2 based transistor, rapid progress has been achieved in two-dimensional (2D) material-based atomically thin electronics, providing an alternative approach to solve the bottleneck in silicon device miniaturization. In this scenario, reliable contact between the metal electrodes and the subnanometer-thick 2D materials becomes crucial in determining the device performance. Here, utilizing the quasi-van der Waals (vdW) epitaxy of metals on fluorophlogopite mica, we demonstrate an all-stacking method for the fabrication of 2D devices with high-quality vdW contacts by mechanically transferring pre-deposited metal electrodes. This technique is applicable for complex device integration with sizes up to the wafer scale and is also capable of tuning the electric characteristics of the interfacial junctions by transferring selective metals. Our results provide an efficient, scalable, and low-cost technique for 2D electronics, allowing high-density device integration as well as a handy tool for fundamental research in vdW materials. 2D semiconductors may offer a platform for future electronics, but the wafer-scale fabrication of high-performance 2D transistors remains challenging. Here, the authors report a universal all-stacking method to fabricate wafer-scale 2D electronic devices with van der Waals contacts, based on epitaxial metallic electrodes grown on fluorophlogopite mica.
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| GB/T 7714 | Zhang, Xiaodong , Huang, Chenxi , Li, Zeyu et al. Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts [J]. | NATURE COMMUNICATIONS , 2024 , 15 (1) . |
| MLA | Zhang, Xiaodong et al. "Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts" . | NATURE COMMUNICATIONS 15 . 1 (2024) . |
| APA | Zhang, Xiaodong , Huang, Chenxi , Li, Zeyu , Fu, Jun , Tian, Jiaran , Ouyang, Zhuping et al. Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts . | NATURE COMMUNICATIONS , 2024 , 15 (1) . |
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We numerically study the general valley polarization and anomalous Hall effect in van der Waals (vdW) heterostructures based on monolayer jacutingaite family materials Pt(2)AX(3) (A = Hg, Cd, Zn; X = S, Se, Te). We perform a systematic study on the atomic, electronic, and topological properties of vdW heterostructures composed of monolayer Pt(2)AX(3) and two-dimensional ferromagnetic insulators. We show that four kinds of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase, i.e., Pt2HgS3/NiBr2, Pt2HgSe3/CoBr2, Pt2HgSe3/NiBr2, and Pt2ZnS3/CoBr2, with a maximum valley splitting of 134.2 meV in Pt2HgSe3/NiBr2 and sizable global band gap of 58.8 meV in Pt2HgS3/NiBr2. Our findings demonstrate an ideal platform to implement applications on topological valleytronics.
Keyword ：
first-principles calculations first-principles calculations jacutingaite family materials jacutingaite family materials quantum anomalous Hall effect quantum anomalous Hall effect topological valleytronics topological valleytronics transition metal dichalcogenides transition metal dichalcogenides valley polarization valley polarization van der Waals heterostructure van der Waals heterostructure
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| GB/T 7714 | Zhu, Xudong , Chen, Yuqian , Liu, Zheng et al. Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials [J]. | FRONTIERS OF PHYSICS , 2023 , 18 (2) . |
| MLA | Zhu, Xudong et al. "Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials" . | FRONTIERS OF PHYSICS 18 . 2 (2023) . |
| APA | Zhu, Xudong , Chen, Yuqian , Liu, Zheng , Han, Yulei , Qiao, Zhenhua . Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials . | FRONTIERS OF PHYSICS , 2023 , 18 (2) . |
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Recently, the magnetic domain walls have been experimentally observed in antiferromagnetic topological insulators MnBi2Te4. Here we study the intrinsic topological zero-line modes (ZLMs) that appear along the domain walls, and find that these ZLMs are layer dependent in MnBi2Te4 multilayers. We reveal the role of the spatial layer degree of freedom and magnetic domain wall configurations in determining the electronic transport properties and the distribution of the ZLMs in antiferromagnetic topological insulator systems. For antiferromagnetic domain wall with out-of-plane magnetization within each domain, we find that ZLMs are only distributed in the odd-number layers equally. For the Neel domain wall, the ZLMs are no longer distributed in the odd-number layers equally due to the mirror symmetry (Mz) breaking, and can exist in the even-number layers in multilayer systems. Moreover, the ZLMs are mainly distributed in the outermost layers with increasing layer thickness. Our findings lay out a strategy in manipulating ZLMs and can be utilized to distinguish the corresponding magnetic structures.
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| GB/T 7714 | Liang, Wenhao , Hou, Tao , Zeng, Junjie et al. Layer-dependent zero-line modes in antiferromagnetic topological insulators [J]. | PHYSICAL REVIEW B , 2023 , 107 (7) . |
| MLA | Liang, Wenhao et al. "Layer-dependent zero-line modes in antiferromagnetic topological insulators" . | PHYSICAL REVIEW B 107 . 7 (2023) . |
| APA | Liang, Wenhao , Hou, Tao , Zeng, Junjie , Liu, Zheng , Han, Yulei , Qiao, Zhenhua . Layer-dependent zero-line modes in antiferromagnetic topological insulators . | PHYSICAL REVIEW B , 2023 , 107 (7) . |
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In 2010, the quantum anomalous Hall effect (QAHE) in graphene was proposed in the presence of Rashba spin-orbit coupling and a ferromagnetic exchange field. After a decade of experimental exploration, the anomalous Hall conductance can only reach about 0.25 in units of 2e2/h, which was attributed to the tiny Rashba spin-orbit coupling. Here, we show theoretically that Re-intercalation in a graphene/CrI3 heterostructure can not only induce sizable Rashba spin-orbit coupling (>40 meV), but also open up large band gaps at valleys K (22.2 meV) and K' (30.3 meV), and a global band gap over 5.5 meV (19.5 meV with random Re distribution) hosting QAHE. A low-energy continuum model is constructed to explain the underlying physical mechanism. We find that Rashba spin-orbit coupling is robust against external stress whereas a tensile strain can increase the global bulk gap. Furthermore, we comprehensively explore the electronic properties of 3d, 4d, 5d transition-metal intercalation in graphene/CrI3 systems.
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| GB/T 7714 | Han, Yulei , Yan, Zhi , Li, Zeyu et al. Large Rashba spin-orbit coupling and high-temperature quantum anomalous Hall effect in Re-intercalated graphene/CrI3 heterostructure [J]. | PHYSICAL REVIEW B , 2023 , 107 (20) . |
| MLA | Han, Yulei et al. "Large Rashba spin-orbit coupling and high-temperature quantum anomalous Hall effect in Re-intercalated graphene/CrI3 heterostructure" . | PHYSICAL REVIEW B 107 . 20 (2023) . |
| APA | Han, Yulei , Yan, Zhi , Li, Zeyu , Xu, Xiaohong , Zhang, Zhenyu , Niu, Qian et al. Large Rashba spin-orbit coupling and high-temperature quantum anomalous Hall effect in Re-intercalated graphene/CrI3 heterostructure . | PHYSICAL REVIEW B , 2023 , 107 (20) . |
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Spin-polarized two-dimensional (2D) materials with large and tunable spin-splitting energy promise the field of 2D spintronics. While graphene has been a canonical 2D material, its spin properties and tunability are limited. Here, this work demonstrates the emergence of robust spin-polarization in graphene with large and tunable spin-splitting energy of up to 132 meV at zero applied magnetic fields. The spin polarization is induced through a magnetic exchange interaction between graphene and the underlying ferrimagnetic oxide insulating layer, Tm3Fe5O12, as confirmed by its X-ray magnetic circular dichroism (XMCD). The spin-splitting energies are directly measured and visualized by the shift in their Landau-fan diagram mapped by analyzing the measured Shubnikov-de-Haas (SdH) oscillations as a function of applied electric fields, showing consistent fit with the first-principles and machine learning calculations. Further, the observed spin-splitting energies can be tuned over a broad range between 98 and 166 meV by field cooling. The methods and results are applicable to other 2D (magnetic) materials and heterostructures, and offer great potential for developing next-generation spin logic and memory devices. This work demonstrates the emergence of robust spin-polarization in graphene on a ferrimagnetic insulating oxide Tm3Fe5O12 (TmIG) with large spin-splitting energy of up to hundreds of meV. Moreover, the induced spin-splitting energy can be tuned over a broad range by field cooling technique. The observed spin polarization in graphene with large and tunable spin-splitting energy promises the field of 2D spintronics.image
Keyword ：
2D materials 2D materials complex oxides complex oxides field cooling field cooling Landau-fan diagram Landau-fan diagram spin-polarization spin-polarization
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| GB/T 7714 | Hu, Junxiong , Han, Yulei , Chi, Xiao et al. Tunable Spin-Polarized States in Graphene on a Ferrimagnetic Oxide Insulator [J]. | ADVANCED MATERIALS , 2023 , 36 (8) . |
| MLA | Hu, Junxiong et al. "Tunable Spin-Polarized States in Graphene on a Ferrimagnetic Oxide Insulator" . | ADVANCED MATERIALS 36 . 8 (2023) . |
| APA | Hu, Junxiong , Han, Yulei , Chi, Xiao , Omar, Ganesh Ji , Al Ezzi, Mohammed Mohammed Esmail , Gou, Jian et al. Tunable Spin-Polarized States in Graphene on a Ferrimagnetic Oxide Insulator . | ADVANCED MATERIALS , 2023 , 36 (8) . |
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We numerically study the general valley polarization and anomalous Hall effect in van der Waals(vdW)heterostructures based on monolayer jacutingaite family materials Pt2AX3(A=Hg,Cd,Zn;X=S,Se,Te).We perform a systematic study on the atomic,electronic,and topological prop-erties of vdW heterostructures composed of monolayer Pt2AX3 and two-dimensional ferromagnetic insulators.We show that four kinds of vdW heterostructures exhibit valley-polarized quantum anomalous Hall phase,i.e.,Pt2HgS3/NiBr2,Pt2HgSe3/CoBr2,Pt2HgSe3/NiBr2,and Pt2ZnS3/CoBr2,with a maximum valley splitting of 134.2 meV in Pt2HgSe3/NiBr2 and sizable global band gap of 58.8 meV in Pt2HgS3/NiBr2.Our findings demonstrate an ideal platform to implement applications on topological valleytronics.
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| GB/T 7714 | Xudong Zhu , Yuqian Chen , Zheng Liu et al. Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials [J]. | 物理学前沿 , 2023 , 18 (2) : 213-224 . |
| MLA | Xudong Zhu et al. "Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials" . | 物理学前沿 18 . 2 (2023) : 213-224 . |
| APA | Xudong Zhu , Yuqian Chen , Zheng Liu , Yulei Han , Zhenhua Qiao . Valley-polarized quantum anomalous Hall effect in van der Waals heterostructures based on monolayer jacutingaite family materials . | 物理学前沿 , 2023 , 18 (2) , 213-224 . |
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Van Hove singularity (VHS) has been considered as a driving source for unconventional superconductivity. A VHS in two-dimensional (2D) materials consists of a saddle point connecting electron-like and hole-like bands. In a rare case, when a VHS appears at Fermi level, both electron-like and hole-like conduction can coexist, giving rise to an enhanced density of states as well as an attractive component of Coulomb interaction for unconventional electronic pairing. However, this van Hove scenario is often destroyed by an incorrect chemical potential or competing instabilities. Here, by using angle-resolved photoemission measurements, we report the observation of a VHS perfectly aligned with the Fermi level in a kagome superconductor CsV3-xTaxSb5 (x similar to 0.4), in which a record-high superconducting transition temperature is achieved among all the current variants of AV(3)Sb(5) (A = Cs, Rb, K) at ambient pressure. Doping dependent measurements reveal the important role of van Hove scenario in boosting superconductivity, and spectroscopic-imaging scanning tunneling microscopy measurements indicate a distinct superconducting state in this system.
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| GB/T 7714 | Luo, Yang , Han, Yulei , Liu, Jinjin et al. A unique van Hove singularity in kagome superconductor CsV3-xTaxSb5 with enhanced superconductivity [J]. | NATURE COMMUNICATIONS , 2023 , 14 (1) . |
| MLA | Luo, Yang et al. "A unique van Hove singularity in kagome superconductor CsV3-xTaxSb5 with enhanced superconductivity" . | NATURE COMMUNICATIONS 14 . 1 (2023) . |
| APA | Luo, Yang , Han, Yulei , Liu, Jinjin , Chen, Hui , Huang, Zihao , Huai, Linwei et al. A unique van Hove singularity in kagome superconductor CsV3-xTaxSb5 with enhanced superconductivity . | NATURE COMMUNICATIONS , 2023 , 14 (1) . |
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Quantum anomalous Hall effect (QAHE) is the real topological state without magnetic field that is robust against any perturbations, and is related to a bulk topological number C, counting the number of chiral edge modes. Such chiral edge modes also exist at the magnetic domain walls between regions with different Chern numbers. Here, we systematically investigate the electronic properties of topological junctions formed at boundaries of QAHEs with different Chern numbers. We find that the number of chiral edge modes along the junction is determined by the difference of Chern numbers of adjacent regions, which can be understood from the coupling between counterpropagating channels along the junction. Finally, we show that the current partition of topological junctions can be flexibly manipulated by tuning the number of quantum anomalous Hall regions, Chern numbers, and the magnetization directions. Our work provides an ideal platform to design multichannel low-power devices for electronic circuits and switching applications.
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| GB/T 7714 | Han, Yulei , Pan, Shiyao , Qiao, Zhenhua . Topological junctions in high-Chern-number quantum anomalous Hall systems [J]. | PHYSICAL REVIEW B , 2023 , 108 (11) . |
| MLA | Han, Yulei et al. "Topological junctions in high-Chern-number quantum anomalous Hall systems" . | PHYSICAL REVIEW B 108 . 11 (2023) . |
| APA | Han, Yulei , Pan, Shiyao , Qiao, Zhenhua . Topological junctions in high-Chern-number quantum anomalous Hall systems . | PHYSICAL REVIEW B , 2023 , 108 (11) . |
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