Query:
学者姓名:徐中炜
Refining:
Year
Type
Indexed by
Source
Complex
Co-
Language
Clean All
Abstract :
密立根油滴实验是大学物理实验中的重要课程。实验中学生通过宏观的力学研究微观世界的量子性,能够培养学生的动手能力自主学习能力、对已有知识的综合运用能力、组织协调能力。然而教学中存在实验样本少、实验流程长、“试错”选择性筛选结果等问题。本文通过分析教学成果,探讨了教学过程中存在的缺陷,并提出对教学设备进行改进的方案:使用机器视觉来改进密立根油滴实验的流程,实时图像处理和自动化数据收集,学生可以更专注于实验的理论和结果分析,而不是繁琐的操作过程。这样的系统还可以使实验结果更易于分享和讨论,增加互动性,从而提高学生的学习积极性和吸收效果。不仅可以提高教学质量,还可以激发学生的兴趣,培养他们的科学素养和创新能力。这是教育技术发展的一个重要方向,值得探索和实施。
Keyword :
元电荷 元电荷 密立根油滴 密立根油滴 教学研究 教学研究 机器视觉 机器视觉 油滴实验 油滴实验
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | 徐中炜 , 吕佩伟 , 施洋 et al. 基于机器视觉密立根油滴实验的教学探索与实践 [J]. | 大学物理实验 , 2024 , 37 (04) : 101-107 . |
MLA | 徐中炜 et al. "基于机器视觉密立根油滴实验的教学探索与实践" . | 大学物理实验 37 . 04 (2024) : 101-107 . |
APA | 徐中炜 , 吕佩伟 , 施洋 , 马靖 . 基于机器视觉密立根油滴实验的教学探索与实践 . | 大学物理实验 , 2024 , 37 (04) , 101-107 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
InP quantum dots (QDs) are considered to be one of the most promising materials for application in light-emitting devices due to the advantages of heavy-metal-free characteristic and widely tunable spectrum covering most of the visible and near-infrared regions. However, the performance of InP quantum dot light-emitting diodes (QLEDs) lags far behind their Cd-containing counterparts, especially as the InP pixelated de-vice is still in its infancy. In this study, multi-component functional QD inks with excellent stability and print-ability was developed for inkjet printing InP array QLEDs. High-quality QD films can be obtained, both on flat and bank-containing substrates, by precisely controlling the competition between capillary and Marangoni flows in the printed droplets, enabling high device performance. In addition, a periodic ZnO microlens arrays was prepared by nanoimprinting technology to enhance the light extraction efficiency of inkjet-printed InP QLEDs, leading to 127.6% improvement in external quantum efficiency (EQE) compared to the control device. The maximum luminance, EQE and current efficiency of the obtained device are 17,759 cd/m2, 8.1% and 11.1 cd/A, respectively. These results may facilitate the applications of high performance environment-friendly QLEDs by inkjet printing technology.
Keyword :
Inkjet printing Inkjet printing InP quantum dots InP quantum dots Light extraction Light extraction QLEDs QLEDs
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Bai, Jieyu , Hu, Hailong , Yu, Yongshen et al. Achieving high performance InP quantum dot light-emitting devices by using inkjet printing [J]. | ORGANIC ELECTRONICS , 2023 , 113 . |
MLA | Bai, Jieyu et al. "Achieving high performance InP quantum dot light-emitting devices by using inkjet printing" . | ORGANIC ELECTRONICS 113 (2023) . |
APA | Bai, Jieyu , Hu, Hailong , Yu, Yongshen , Zhu, Yangbin , Xu, Zhongwei , Zheng, Wenchen et al. Achieving high performance InP quantum dot light-emitting devices by using inkjet printing . | ORGANIC ELECTRONICS , 2023 , 113 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
Interactive display devices integrating multiple functions have become a development trend of display technology. The excellent luminescence properties of perovskite quantum dots (PQDs) make it an ideal luminescent material for the next generation of wide-color gamut displays. Here we design and fabricate dual-function light-sensing/displaying light-emitting devices based on PQDs. The devices can display information as an output port, and simultaneously sense outside light signals as an input port and modulate the display information in a non-contact mode. The dual functions were attributed to the device designs: (1) the hole transport layer in the devices also acts as the light-sensing layer to absorb outside light signals; (2) the introduced hole trapping layer interface can trap holes originating from the light-sensing layer, and thus tune the charge transport properties and the light-emitting intensities. The sensing and display behavior of the device can be further modulated by light signals with different time and space information. This fusion of sensing and display functions has broad prospects in non-contact interactive screens and communication ports.
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Ju, Songman , Zhu, Yangbin , Hu, Hailong et al. Dual-function perovskite light-emitting/sensing devices for optical interactive display [J]. | LIGHT-SCIENCE & APPLICATIONS , 2022 , 11 (1) . |
MLA | Ju, Songman et al. "Dual-function perovskite light-emitting/sensing devices for optical interactive display" . | LIGHT-SCIENCE & APPLICATIONS 11 . 1 (2022) . |
APA | Ju, Songman , Zhu, Yangbin , Hu, Hailong , Liu, Yang , Xu, Zhongwei , Zheng, Jinping et al. Dual-function perovskite light-emitting/sensing devices for optical interactive display . | LIGHT-SCIENCE & APPLICATIONS , 2022 , 11 (1) . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
Effective utilization of natural slight vibration with small movement speed is beneficial to development of energy harvest technology for solving energy problems. However, obtaining high current output when harvesting mechanical energy with ultralow vibration speed is difficult. Here, inspired by stomatopod (mantis) shrimp that has the ability to release pre-stored energy in a rapid action for generating an extremely fast strike, we propose an integrate-and-fire triboelectric (IF-TENG) to realize speed amplification. In this device, input mechanical energy from ultralow-speed vibrations can be firstly integrated, and then be instantaneously released in full when reaching a threshold. Thus, charged friction layers of the TENG can move at a high speed, leading to a relatively high output current. In addition to the speed amplification, the IF-TENG can stabilize the output current at different vibration speeds. Furthermore, we demonstrate that the idea of IF component could be introduced to both vertical contact-separation and lateral-sliding mode TENG for output performance enhancement, which supplies an efficient way for converting ultralow-speed vibration into electricity.
Keyword :
High output current High output current Integrate-and-fire Integrate-and-fire Low-speed vibrations Low-speed vibrations Speed amplification Speed amplification Triboelectric nanogenerators Triboelectric nanogenerators
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Xu, Zhongwei , Li, Dianlun , Wang, Kun et al. Stomatopod-inspired integrate-and-fire triboelectric nanogenerator for harvesting mechanical energy with ultralow vibration speed [J]. | APPLIED ENERGY , 2022 , 312 . |
MLA | Xu, Zhongwei et al. "Stomatopod-inspired integrate-and-fire triboelectric nanogenerator for harvesting mechanical energy with ultralow vibration speed" . | APPLIED ENERGY 312 (2022) . |
APA | Xu, Zhongwei , Li, Dianlun , Wang, Kun , Liu, Ye , Wang, Jiaxin , Qiu, Zhirong et al. Stomatopod-inspired integrate-and-fire triboelectric nanogenerator for harvesting mechanical energy with ultralow vibration speed . | APPLIED ENERGY , 2022 , 312 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
Perovskite quantum dots light-emitting diodes (PQLEDs), due to the advantages of high luminous efficiency, high color purity, adjustable spectral range, etc., has an excellent prospect in the next generation of high-definition displays. As an indispensable part of displays, blue PQLEDs are usually achieved by mixing halogen, which, however, will lead to halogen ion migration and phase separation of perovskite material at high temperature and bias pressure, thus make the electroluminescent spectrum redshift. In this manuscript, we propose a strategy to inhibit phase separation of blue perovskite quantum dots (PQDs) by introducing alkali metal, and obtain stable perovskite quantum dot light-emitting diodes. The PQLEDs based on this strategy show an external quantum efficiency (EQE) of 1.87% and a brightness of 3757 cd m- 2, and can still guarantee stable electroluminescence (EL) spectra at a bias of up to 14 V. The work is beneficial for probing into the mechanism of suppressing the phase separation of mixed halogen blue PQDs and offer a promising strategy to enhance the color stability of blue PQLEDs.
Keyword :
Blue light-emitting diodes Blue light-emitting diodes Perovskite quantum dots Perovskite quantum dots Phase separation Phase separation Spectral stability Spectral stability
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Ju, Songman , Mao, Chaomin , Liu, Yang et al. Inhibiting phase separation of perovskite quantum dots for achieving stable blue light-emitting diodes [J]. | ORGANIC ELECTRONICS , 2022 , 113 . |
MLA | Ju, Songman et al. "Inhibiting phase separation of perovskite quantum dots for achieving stable blue light-emitting diodes" . | ORGANIC ELECTRONICS 113 (2022) . |
APA | Ju, Songman , Mao, Chaomin , Liu, Yang , Zhu, Yangbin , Xu, Zhongwei , Yang, Kaiyu et al. Inhibiting phase separation of perovskite quantum dots for achieving stable blue light-emitting diodes . | ORGANIC ELECTRONICS , 2022 , 113 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
Perovskite quantum dots (PQDs) have been widely used to realize light-emitting diodes (LEDs) with high color purity, efficiency, and wide color gamut. Due to the demand for huge amount of display information, development on high-resolution PQD LEDs (PQLEDs) with massive pixel density are highly desired. Herein, high-resolution PQLEDs are fabricated by using nanoimprint technique. By preparing a honeycomb-insulating polymer polymethyl methacrylate (PMMA) film, the high-resolution pixelated quantum dot emissive layer is formed. In addition, the leakage current of the device is significantly reduced because the direct contact between electron transport layer and hole transport layer is avoided. The PQLEDs based on nanoimprint technology show a resolution of 9072 pixels per inch (PPI), and a maximum external quantum efficiency (EQE) and brightness of 7.81% and 146 400 cd m(-2), respectively. The results demonstrate that high-resolution PQLEDs can be realized by using nanoimprint technology, holding great commercial potential for next-generation near-eye displays.
Keyword :
high-resolution high-resolution leakage current leakage current light-emitting diodes light-emitting diodes nanoimprint nanoimprint perovskite quantum dots perovskite quantum dots
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Mao, Chaomin , Ju, Songman , Zheng, Jinping et al. Ultra-High-Resolution Perovskite Quantum Dot Light-Emitting Diodes [J]. | ADVANCED OPTICAL MATERIALS , 2022 , 11 (4) . |
MLA | Mao, Chaomin et al. "Ultra-High-Resolution Perovskite Quantum Dot Light-Emitting Diodes" . | ADVANCED OPTICAL MATERIALS 11 . 4 (2022) . |
APA | Mao, Chaomin , Ju, Songman , Zheng, Jinping , Zheng, Yueting , Xu, Zhongwei , Lin, Lihua et al. Ultra-High-Resolution Perovskite Quantum Dot Light-Emitting Diodes . | ADVANCED OPTICAL MATERIALS , 2022 , 11 (4) . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
The demonstration of high-resolution quantum-dot light-emitting diodes by transfer printing could prove useful for next-generation displays. With the ever-growing demand for a greater number of pixels, next-generation displays have challenging requirements for resolution as well as colour gamut. Here, to meet this need, quantum-dot light-emitting diodes (QLEDs) with an ultrahigh pixel resolution of 9,072-25,400 pixels per inch are realized via transfer printing combined with the Langmuir-Blodgett film technology. To reduce the leakage current of the devices, a honeycomb-patterned layer of wide-bandgap quantum dots is embedded between the light-emitting quantum-dot pixels as a non-emitting charge barrier layer. Red and green QLEDs are demonstrated. Notably, the red devices achieve a brightness of up to 262,400 cd m(-2) at an applied voltage of 8 V and a peak external quantum efficiency of 14.72%. This work provides a promising way for achieving ultrahigh-resolution QLED devices with high performance.
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Meng, Tingtao , Zheng, Yueting , Zhao, Denglin et al. Ultrahigh-resolution quantum-dot light-emitting diodes [J]. | NATURE PHOTONICS , 2022 , 16 (4) : 297-, . |
MLA | Meng, Tingtao et al. "Ultrahigh-resolution quantum-dot light-emitting diodes" . | NATURE PHOTONICS 16 . 4 (2022) : 297-, . |
APA | Meng, Tingtao , Zheng, Yueting , Zhao, Denglin , Hu, Hailong , Zhu, Yangbin , Xu, Zhongwei et al. Ultrahigh-resolution quantum-dot light-emitting diodes . | NATURE PHOTONICS , 2022 , 16 (4) , 297-, . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
Recently, solution-processed quantum dot light-emitting diodes (QLEDs) have emerged as a promising candidate for next-generation lighting and display devices. However, when given a constant voltage or current, the QLEDs need a certain working time to reach their maximum brightness. Such positive aging challenge, dramatically reducing the response speed of the device and causing a luminescence delay, is urgent to be investigated and resolved. In the current work, we introduce a charge-storage layer architecture by inserting copper(I) thiocyanate (CuSCN) between the organic hole-injection layer and hole-transport layer. The extracted holes will be released during the next electrical signal stimulation to increase the efficiency of charge transport. As a result, the response speed of the QLEDs is improved by an order of magnitude. In addition, by inserting an inorganic CuSCN layer, the efficiency, lifetime, and environmental stability of red/green/blue full-color QLEDs are enhanced simultaneously. Moreover, this work provides a generic strategy for the fabrication of fast-response and high-efficiency full-color QLEDs without luminescence delay, which plays a critical role in the practical industrialization of QLEDs.
Keyword :
charge storage layer charge storage layer luminescence delay luminescence delay quantum dot quantum dot response speed response speed
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Zhu, Yangbin , Liu, Yang , Hu, Hailong et al. Fast-response, high-stability, and high-efficiency full-color quantum dot light-emitting diodes with charge storage layer [J]. | SCIENCE CHINA-MATERIALS , 2021 , 65 (4) : 1012-1019 . |
MLA | Zhu, Yangbin et al. "Fast-response, high-stability, and high-efficiency full-color quantum dot light-emitting diodes with charge storage layer" . | SCIENCE CHINA-MATERIALS 65 . 4 (2021) : 1012-1019 . |
APA | Zhu, Yangbin , Liu, Yang , Hu, Hailong , Xu, Zhongwei , Bai, Jieyu , Yang, Kaiyu et al. Fast-response, high-stability, and high-efficiency full-color quantum dot light-emitting diodes with charge storage layer . | SCIENCE CHINA-MATERIALS , 2021 , 65 (4) , 1012-1019 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
Optical security labels play a significant role in protecting both our wealth and health. However, simultaneously meeting the requirements including low-cost fabrication, easy detection, and high-level security is still challenging for security labels. Here, we design an unclonable anti-counterfeiting system with triple-level security by using the inkjet printing technique, which can be authenticated by naked eyes, a portable microscope, and a fluorescence microscope. These labels are achieved by printing microscale quantum dot (QD) ink droplets on premodified substrates with random-distributed glass microspheres. Due to the unique capillary action induced by the glass microspheres, QDs in the ink droplets are deposited around the microspheres, forming microscale multicircular patterns. Multiple pinning of QDs at the three-phase contact lines appears during the evaporation of the droplet, resulting in the formation of a nanoscale labyrinthine pattern around the microspheres. The nanoscale labyrinth pattern and the microscale multicircular microsphere array, together with the printed macroscopic image, constitute a triple-level progressive anti-counterfeiting system. Moreover, the system is compatible with an artificial intelligence-based identification strategy that allows rapid identification and verification of the unclonable security labels.
Keyword :
anti-counterfeiting anti-counterfeiting inkjet printing inkjet printing labyrinth pattern labyrinth pattern physical unclonable function physical unclonable function quantum dots quantum dots
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Zheng, Xin , Zhu, Yangbin , Liu, Yang et al. Inkjet-Printed Quantum Dot Fluorescent Security Labels with Triple-Level Optical Encryption [J]. | ACS APPLIED MATERIALS & INTERFACES , 2021 , 13 (13) : 15701-15708 . |
MLA | Zheng, Xin et al. "Inkjet-Printed Quantum Dot Fluorescent Security Labels with Triple-Level Optical Encryption" . | ACS APPLIED MATERIALS & INTERFACES 13 . 13 (2021) : 15701-15708 . |
APA | Zheng, Xin , Zhu, Yangbin , Liu, Yang , Zhou, Linpeng , Xu, Zhongwei , Feng, Chen et al. Inkjet-Printed Quantum Dot Fluorescent Security Labels with Triple-Level Optical Encryption . | ACS APPLIED MATERIALS & INTERFACES , 2021 , 13 (13) , 15701-15708 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
The performance of perovskite quantum dot light-emitting diodes (PeQLEDs) has been rapidly enhanced recently, but the devices are still stuck in the stage of using small-scale solution processes, such as spin-coating. In this work, we report the realization of high performance PeQLEDs by using inkjet printing technique. We demonstrate the preparation of a printable perovskite quantum dot ink by using a hybrid solvent consisting of high boiling solvent dodecane and low boiling solvent n-octane. A universal strategy for eliminating coffee rings during inkjet printing of perovskite inks is developed based on the modulation of ink formulation, and the stacking model of perovskite quantum dot in a pixel pit structure is proposed. The inkjet-printed PeLEDs exhibit a low turn-on voltage of 2.7 V, a brightness of 10992 cd/m2 at 6.6 V and a maximum current efficiency of 8.67 cd/ A, which is by far the highest value reported for inkjet-printed PeLEDs. The results pave a way for future realization of high performance pixelated PeLED displays with inkjet printing technique.
Keyword :
Coffee ring Coffee ring Inkjet printing Inkjet printing PeLEDs PeLEDs Perovskite Perovskite
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Zheng, Chunbo , Zheng, Xin , Feng, Chen et al. High-brightness perovskite quantum dot light-emitting devices using inkjet printing [J]. | ORGANIC ELECTRONICS , 2021 , 93 . |
MLA | Zheng, Chunbo et al. "High-brightness perovskite quantum dot light-emitting devices using inkjet printing" . | ORGANIC ELECTRONICS 93 (2021) . |
APA | Zheng, Chunbo , Zheng, Xin , Feng, Chen , Ju, Songman , Xu, Zhongwei , Ye, Yuliang et al. High-brightness perovskite quantum dot light-emitting devices using inkjet printing . | ORGANIC ELECTRONICS , 2021 , 93 . |
Export to | NoteExpress RIS BibTex |
Version :
Export
Results: |
Selected to |
Format: |