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学者姓名：朱敏敏
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Ultra-wide bandgap semiconductors are frequently utilized materials in the fabrication of deep ultraviolet photodetectors (DUVPDs). However, it is imperative to enhance both the photoresponsivity and response speed of these detectors. Herein, we deposited high-quality (111)-oriented ZnGa 2 O 4 films with a bandgap of approximately 4.75 eV onto c -plane sapphire (0001) substrates using magnetron sputtering. Our findings illuminate the pivotal role of pressure in shaping their structural properties, chemical compositions, and photoelectric characteristics. Importantly, DUVPDs based on ZnGa 2 O 4 films exhibited a photo/dark current ratio of 1.46 x 10 4 . Furthermore, we observed the highest responsivity to be 72.2 A/W, complemented by a photodetectivity of 4.21 x 10 14 Jones, an external quantum efficiency of 4.04 x 10 4 %, and rise and decay times of 2.32 s and 0.055 s, respectively. This study underscores the commendable photoresponsivity and rapid response time of the ZnGa 2 O 4 photodetector, positioning it as a compelling candidate for the advancement of deep ultraviolet devices.
Keyword ：
Deep ultraviolet photodetector Deep ultraviolet photodetector MSM structure MSM structure Photodetectivity Photodetectivity Response speed Response speed
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| GB/T 7714 | Xin, Yangmei , Zhang, Wenfei , Gao, Zhen et al. Preparation of ZnGa 2 O 4-based deep ultraviolet photodetector with high photodetectivity by magnetron sputtering [J]. | VACUUM , 2024 , 224 . |
| MLA | Xin, Yangmei et al. "Preparation of ZnGa 2 O 4-based deep ultraviolet photodetector with high photodetectivity by magnetron sputtering" . | VACUUM 224 (2024) . |
| APA | Xin, Yangmei , Zhang, Wenfei , Gao, Zhen , Xiu, Junshan , Yu, Dan , Li, Zhao et al. Preparation of ZnGa 2 O 4-based deep ultraviolet photodetector with high photodetectivity by magnetron sputtering . | VACUUM , 2024 , 224 . |
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Polymer matrix composites with excellent thermal management performance have emerged as remarkable materials in the realms of microelectronic devices and wireless communication technologies. However, achieving high thermal conductivity in most composites often requires a high filling load, which will compromise other desirable properties. Herein, utilizing physical foaming and vacuum infiltration methods, we introduce a 3D honeycomb composite consisting of surface-hydroxylated hexagonal boron nitride (OH-BN) and epoxy. The 3D OH-BN honeycomb foam in the composite features a lightweight design (0.33 g/cm3), high strength (7178 times its own weight) and prominent heat transfer performance. Significantly, these composites achieve notable thermal properties, including high through-plane thermal conductivity (2.073 W m−1 K−1) and relatively low thermal resistance (0.995 °C/W) at a reduced filling load (17.2 vol%). In comparison with pure epoxy, the through-plane thermal conductivity is enhanced by an impressive 894 %, while the thermal resistance is reduced to 1/9.4 of that observed in pure epoxy. Besides, the 3D honeycomb composites combine outstanding mechanical performance, low dielectric properties and excellent insulation, underscoring their potential in the field of thermal management applications in microelectronic devices, wireless communication systems and integrated circuits. © 2024
Keyword ：
Boron nitride Boron nitride Dielectric properties of solids Dielectric properties of solids Filled polymers Filled polymers Fillers Fillers Foams Foams Heat transfer Heat transfer Honeycomb structures Honeycomb structures III-V semiconductors III-V semiconductors Nitrides Nitrides Polymer matrix composites Polymer matrix composites Temperature control Temperature control Thermal conductivity Thermal conductivity Thermal insulation Thermal insulation
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| GB/T 7714 | Liu, Guang , Ding, Ao , Xu, Pingfan et al. Thermal conductivity of epoxy composites containing 3D honeycomb boron nitride filler [J]. | Chemical Engineering Journal , 2024 , 489 . |
| MLA | Liu, Guang et al. "Thermal conductivity of epoxy composites containing 3D honeycomb boron nitride filler" . | Chemical Engineering Journal 489 (2024) . |
| APA | Liu, Guang , Ding, Ao , Xu, Pingfan , Zhu, Minmin , Zhang, Haizhong , Zheng, Yuying et al. Thermal conductivity of epoxy composites containing 3D honeycomb boron nitride filler . | Chemical Engineering Journal , 2024 , 489 . |
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Sintering for large-sized, stoichiometric Bi0.5Na0.5TiO3 (BNT) ceramics is of great challenge due to the loss of volatile Bi/Na at A-site of perovskite structure. In this work, BNT ceramic tile with the size of similar to 10 x 10 cm2 and near-stoichiometric composition has been successfully fabricated by Isobam-assisted gelcasting process, followed by sintering with 1150 degrees C calcined power bed. The powder bed used and sintering duration were found to have a great influence on the formation of the Na-deficient phase (Bi4.5Na0.5Ti4O15) in the ceramics, and the strategies to eliminate it have been explored. The obtained ceramics exhibit a dielectric constant/loss of 673.6/0.039 at 1 kHz, as well as an electrostrictive strain of similar to 0.07% which corresponds to a converse piezoelectric constant d33*$d_{33}<^>*$ of 105.2 pm/V. Our work thus provides an effective approach to prepare large-sized and stoichiometric BNT ceramics.
Keyword ：
BNT BNT dielectric dielectric electrostriction electrostriction sintering sintering stoichiometry stoichiometry
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| GB/T 7714 | Guo, Huilu , Zhu, Minmin , Zhao, Yida et al. Sintering of large-sized and near-stoichiometric BNT ceramics with enhanced dielectric and electrostrictive properties [J]. | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (6) : 4086-4095 . |
| MLA | Guo, Huilu et al. "Sintering of large-sized and near-stoichiometric BNT ceramics with enhanced dielectric and electrostrictive properties" . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY 107 . 6 (2024) : 4086-4095 . |
| APA | Guo, Huilu , Zhu, Minmin , Zhao, Yida , Du, Zehui . Sintering of large-sized and near-stoichiometric BNT ceramics with enhanced dielectric and electrostrictive properties . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (6) , 4086-4095 . |
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In this work, a novel gallium oxide (Ga2O3) vertical FinFET with integrated Schottky barrier diode (SBD-FinFET), which achieves low conduction losses, is proposed. In the reverse conduction state, the integrated SBD can provide additional low-resistance path to conduct reverse current, hence achieving low reverse conduction loss. In the switching state, the SBD-FinFET can also reduce gate-drain capacitance and gate charge, thus featuring fast switching speed and low switching losses. Furthermore, in the other states, the integrated SBD of the SBD-FinFET is in the OFF state, which does not significantly affect the device characteristics. The well-calibrated simulation results show that when compared with the state-of-the-art FinFET with integrated Fin channel and ohmic contact diode (FOD-FinFET), the SBD-FinFET can reduce reverse conduction loss, turn-on loss, and turn-off loss by 25%, 19%, and 22%, respectively, while other characteristics retain almost unchanged.
Keyword ：
beta-gallium oxide (Ga2O3) beta-gallium oxide (Ga2O3) conduction losses conduction losses Electric breakdown Electric breakdown Field effect transistors Field effect transistors FinFET FinFET FinFETs FinFETs Gallium Gallium Logic gates Logic gates Schottky barrier diode (SBD) Schottky barrier diode (SBD) Schottky barriers Schottky barriers Schottky diodes Schottky diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) : 2530-2535 . |
| MLA | Xu, Xiaorui et al. "Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 4 (2024) : 2530-2535 . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Xu, Xiaohui , Yang, Dan , Zhu, Minmin et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) , 2530-2535 . |
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High-performance electro-optic (EO) materials greatly enhance modulators and switches in various photonic applications. We investigate the evolution of the tolerance factor (t) and EO coefficient (rc) in A-site and B-site doped BaTiO3 (BT) thin films. Our analysis reveals that cation transmutation has a remarkable impact on their dielectric constant, spontaneous polarization, optical band gap, and EO coefficient. Notably, Pb-doped BT samples exhibit an even higher rc value of 336.5 pm/V, representing a nearly 60% increase compared to pure BT and approximately 11 times larger than that of LiNbO3. This substantial improvement in EO performance can be attributed to enhanced local structural heterogeneity resulting from cation dopants. Furthermore, infusing dopants in BT also result in good structural uniformity and reliable EO performances, regardless of temperature and frequency. Our study offers valuable insights into doping engineering for obtaining functional perovskite oxides, enabling the development of power-efficient, ultra-compact integrated nanophotonic devices.
Keyword ：
barium titanate barium titanate electro-optic electro-optic nanophotonic device nanophotonic device Pockels coefficient Pockels coefficient tolerance factor tolerance factor
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| GB/T 7714 | Zhu, Minmin , Zhang, Xianrong , Wei, Can et al. Chemical design of barium titanate thin films for nanophotonic devices [J]. | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) : 6263-6274 . |
| MLA | Zhu, Minmin et al. "Chemical design of barium titanate thin films for nanophotonic devices" . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY 107 . 9 (2024) : 6263-6274 . |
| APA | Zhu, Minmin , Zhang, Xianrong , Wei, Can , Yi, Xiaoyuan , Yang, Dan , Zhang, Haizhong et al. Chemical design of barium titanate thin films for nanophotonic devices . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) , 6263-6274 . |
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本工作通过微磁学模拟数值计算证实了以超低电流密度驱动拓扑绝缘体/楔形铁磁异质结构实现确定性无场切换是可行的。此外，我们研究了楔形铁磁层尺寸、界面Dzyaloshinskii-Moriya相互作用、类场转矩和倾斜垂直磁各向异性的偏离极角等因素对自旋轨道矩无场切换的影响。综合优化各个因素后，拓扑绝缘体(BiSb)/楔形铁磁异质结构的临界切换电流密度最低可降至9.0×10~6 A/cm~2,比传统重金属/铁磁结构的临界切换电流密度降低了1～2个数量级。这项研究对于推动低功耗自旋轨道矩磁性随机存储器的产业化应用具有重要的意义。
Keyword ：
垂直磁各向异性 垂直磁各向异性 微磁学模拟 微磁学模拟 拓扑绝缘体 拓扑绝缘体 无场切换 无场切换 自旋轨道矩 自旋轨道矩
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| GB/T 7714 | 邱鹏 , 朱敏敏 , 胡炜 et al. BiSb/楔形铁磁结构中的自旋轨道矩无场切换 [J]. | 功能材料与器件学报 , 2024 , 30 (04) : 197-205 . |
| MLA | 邱鹏 et al. "BiSb/楔形铁磁结构中的自旋轨道矩无场切换" . | 功能材料与器件学报 30 . 04 (2024) : 197-205 . |
| APA | 邱鹏 , 朱敏敏 , 胡炜 , 张海忠 . BiSb/楔形铁磁结构中的自旋轨道矩无场切换 . | 功能材料与器件学报 , 2024 , 30 (04) , 197-205 . |
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Mainstream high-k gate materials, such as SiO2, Al2O3, and HfZrO2, are in demand for modern electronics. However, these dielectrics possess lower thermal conductivity, significantly limiting thermal dissipation in electronic devices. Herein, we propose the utilization of complementary metal-oxide semiconductor- (CMOS) compatible high power impulse magnetron sputtering (HiPIMS) for the mass production of highly textured hexagonal boron nitride (h-BN) on (100)-, (110)-, and (111)-oriented SrTiO3 substrates. The as-prepared films exhibit distinct vertical alignments, as evidenced by HRTEM and FTIR analysis. Notably, the R value, ranging from 0.46 to 0.50, is associated with the stress in the film. Importantly, distinct anisotropies in thermal conductivity, dielectric constant, and optical band gap are observed. Furthermore, the values of thermal conductivity in these highly textured h-BN films are 4.5, 5.7, and 5.3 Wm- 1K-1, which is almost three times larger than those of SiO2 (1.4 Wm- 1K-1) and Al2O3 (1.35 Wm- 1K-1), and even an order of magnitude larger than that of HfZrO2 (0.67 Wm- 1K-1). The combination of excellent dielectric characteristics, favorable thermal conductivity, and superior stability over a broad temperature range makes this novel material outperform conventional dielectric gate materials in high-power electronics applications.
Keyword ：
Boron nitride thin films Boron nitride thin films Dielectric dispersion Dielectric dispersion Highly textured Highly textured HiPIMS HiPIMS Self-dissipating electronics Self-dissipating electronics Thermal conductivity Thermal conductivity
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| GB/T 7714 | Zhu, Minmin , Shao, Yong , Xin, Yangmei et al. Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics [J]. | VACUUM , 2024 , 225 . |
| MLA | Zhu, Minmin et al. "Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics" . | VACUUM 225 (2024) . |
| APA | Zhu, Minmin , Shao, Yong , Xin, Yangmei , Yang, Dan , Lu, Xiaoqiang , Zhang, Haizhong . Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics . | VACUUM , 2024 , 225 . |
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The regeneration of bone tissue is a complex process requiring innovative biomaterials with enhanced osteogenic properties to facilitate successful tissue engineering. Herein, a 3D bionic scaffold comprised of covalently bound graphene/carbon nanotube monoliths are present (3DGp/CNTs) exhibiting long-range ordered porous characteristics, showcasing promising attributes for bone tissue applications. The lightweight, all-carbon scaffolds not only demonstrate excellent mechanical performance in the hydrated state but also mimic the structural and functional features of the extracellular matrix, actively promoting cellular adhesion, proliferation, and differentiation. Significantly, the osteogenic differentiation of dental pulp stem cells (DPSCs) is observed, as evidenced by the upregulation of RUNX2, OSX, BSP, ALP, OPN, and OCN expression. This notable outcome can be attributed to the synergistic effect of 3DGp/CNTs, which create a conducive microenvironment for DPSCs and promote osteogenic differentiation by activating the BMP pathway. This observation elucidates the mechanism through which 3DGp/CNTs induce DPSC mineralization. The combination of these advantages, along with its straightforward and cost-effective preparation technique, positions 3DGp/CNTs as a promising candidate for dental clinical engineering. © 2024 Wiley-VCH GmbH.
Keyword ：
carbon nanotubes carbon nanotubes dental pulp stem cells dental pulp stem cells graphene graphene osteogenic differentiation osteogenic differentiation
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| GB/T 7714 | Zhang, X. , Zhuang, J. , Wei, C. et al. Enhancing Osteogenic Differentiation of Dental Pulp Stem Cells with Covalently Bonded All-Carbon Scaffolds [J]. | Advanced Functional Materials , 2024 , 34 (30) . |
| MLA | Zhang, X. et al. "Enhancing Osteogenic Differentiation of Dental Pulp Stem Cells with Covalently Bonded All-Carbon Scaffolds" . | Advanced Functional Materials 34 . 30 (2024) . |
| APA | Zhang, X. , Zhuang, J. , Wei, C. , Jin, C. , Zhu, M. , Zhao, S. et al. Enhancing Osteogenic Differentiation of Dental Pulp Stem Cells with Covalently Bonded All-Carbon Scaffolds . | Advanced Functional Materials , 2024 , 34 (30) . |
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Metal matrix composites (MMCs), renowned for their lightweight and exceptional mechanical properties, are currently in high demand. Herein, carbon fiber-aluminum metal matrix composites (CF/Al MMCs) modified with 4 types of corrosion-barrier interface coatings (CBCs), respectively, including Ni, TiO2, ZnO, and Al2O3 were investigated, and the composites were prepared by squeeze casting technique. The effects of these CBCs on the CF/Al interface reaction and the mechanical properties and electrochemical corrosion resistance of the composites are revealed and discussed thoroughly. It is observed that T300-carbon fiber reinforced MMCs without any CBCs exhibit low mechanical strength due to the formation of Al4C3 phase induced by strong interaction between fiber and matrix. With CBCs, the formation of Al4C3 was significantly suppressed. Comparatively, the ZnO-coated CF/Al MMCs exhibit the most remarkable enhancement in the mechanical properties with a flexural strength of 796.4 MPa and a modulus of 105.3 GPa, which are approximately 114% and 52.2% higher than those of the counterparts without CBCs, respectively. More importantly, the CF/Al MMCs with CBCs demonstrate superior chemical corrosion resistance, retaining their mechanical performance even after a 7-day immersion in salt solutions. These results provide an important guideline in interface engineering for MMCs with enhanced mechanical properties and electrochemical corrosion resistance.
Keyword ：
Casting Casting Corrosion Corrosion Mechanical properties Mechanical properties Metal-matrix composites Metal-matrix composites
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| GB/T 7714 | Zhu, Minmin , Shao, Yong , Zhao, Yida et al. Interface engineering in CF/Al matrix composites for enhancement in mechanical strength and anti-corrosion properties [J]. | MATERIALS CHARACTERIZATION , 2024 , 212 . |
| MLA | Zhu, Minmin et al. "Interface engineering in CF/Al matrix composites for enhancement in mechanical strength and anti-corrosion properties" . | MATERIALS CHARACTERIZATION 212 (2024) . |
| APA | Zhu, Minmin , Shao, Yong , Zhao, Yida , Chua, Beng Wah , Du, Zehui , Gan, Chee Lip . Interface engineering in CF/Al matrix composites for enhancement in mechanical strength and anti-corrosion properties . | MATERIALS CHARACTERIZATION , 2024 , 212 . |
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The next-generation computing system is required to perform 10(18) floating point operations per second to address the exponential growth of data from sensory terminals, driven by advancements in artificial intelligence and the Internet of Things. Even if a supercomputer possesses the capability to execute these operations, managing heat dissipation becomes a significant challenge when the electronic synapse array reaches a comparable scale with the human neuron network. One potential solution to address thermal hotspots in electronic devices is the use of vertically-aligned hexagonal boron nitride (h-BN) known for its high thermal conductivity. In this study, we have developed textured h-BN films using the high power impulse magnetron sputtering technique. The thermal conductivity of the oriented h-BN film is approximately 354% higher than that of the randomly oriented counterpart. By fabricating electronic synapses based on the textured h-BN thin film, we demonstrate various bio-synaptic plasticity in this device. Our results indicate that orientation engineering can effectively enable h-BN to function as a suitable self-heat dissipation layer, thereby paving the way for future wearable memory devices, solar cells, and neuromorphic devices.
Keyword ：
boron nitride boron nitride high thermal conductivity high thermal conductivity low-power memory low-power memory neuromorphic computing neuromorphic computing vertically-aligned vertically-aligned
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| GB/T 7714 | Zhang, Haizhong , Ju, Xin , Jiang, Haitao et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor [J]. | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) : 1907-1914 . |
| MLA | Zhang, Haizhong et al. "Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor" . | SCIENCE CHINA-MATERIALS 67 . 6 (2024) : 1907-1914 . |
| APA | Zhang, Haizhong , Ju, Xin , Jiang, Haitao , Yang, Dan , Wei, Rongshan , Hu, Wei et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor . | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) , 1907-1914 . |
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