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学者姓名：张海忠
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Abstract ：
如何同质外延生长出具有原子级平整的氧化镓(Ga2O3)单晶薄膜,是制备高性能Ga2O3基功率电子器件或紫外光电器件的基础.本文通过金属有机气相外延(MOVPE)技术综合调控外延生长的热力学条件与动力学参数,在Ga2O3衬底上制备了厚度为1.0 µm的器件级Ga2O3单晶薄膜(非故意掺杂),对薄膜样品进行了物相、表面形貌、晶体质量和电学性能的研究.该薄膜具有单一β相,呈现出与衬底相同的(100)面择优取向.对Ga2O3薄膜表面形貌进行AFM表征,呈现出典型的台阶流形貌,表面粗糙度0.166 nm,且台阶高度0.6 nm(a/2),表明薄膜具有原子级平整.进一步通过HRXRD双晶摇摆曲线评估Ga2O3薄膜结晶质量,外延膜的FWHM低于单晶衬底,表明外延在晶格匹配衬底上的Ga2O3薄膜质量优于衬底.霍尔效应测试结果表明,Ga2O3薄膜的电子迁移率为92.1 cm2/(V·s),载流子浓度为2.65×1016cm-3.本文的研究结果表明只要通过精细化调控温度、压力、Ⅵ/Ⅲ比等关键热力学条件,使核心动力学参数中的横向扩散速率充分大于纵向沉积速率,就有可能在通用的非刻意斜切衬底上实现高长速二维"台阶流"生长.本研究所制备的具有优异晶体质量与电学特性的(100)面同质外延单晶薄膜,在制造高性能Ga2O3功率电子器件具有重要的应用潜力.
Keyword ：
MOVPE MOVPE 二维"台阶流"生长 二维"台阶流"生长 单晶薄膜 单晶薄膜 原子级平整 原子级平整 同质外延 同质外延 氧化镓 氧化镓
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| GB/T 7714 | 李悌涛 , 卢耀平 , 陈端阳 et al. 氧化镓同质外延及二维"台阶流"生长研究 [J]. | 人工晶体学报 , 2025 , 54 (2) : 219-226 . |
| MLA | 李悌涛 et al. "氧化镓同质外延及二维"台阶流"生长研究" . | 人工晶体学报 54 . 2 (2025) : 219-226 . |
| APA | 李悌涛 , 卢耀平 , 陈端阳 , 齐红基 , 张海忠 . 氧化镓同质外延及二维"台阶流"生长研究 . | 人工晶体学报 , 2025 , 54 (2) , 219-226 . |
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Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of (1-Ga2O3 thin film to enhance the power figure of merit of (1-Ga2O3 Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of (1-Ga2O3 SBDs could be modified by varying the ratios of BCl3 and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of (1-Ga2O3 epitaxial layer, the (1-Ga2O3 SBD without termination structure exhibits a low specific on-resistance (Ron,sp) of 4 m Omega & sdot;cm2 and high breakdown voltage (BV) of 1500 V. These results can pave the way for the preparation of high-performance (1-Ga2O3 power SBDs.
Keyword ：
Beta-phase gallium oxide Beta-phase gallium oxide Inductively coupled plasma etching Inductively coupled plasma etching Schottky barrier diode Schottky barrier diode Surface quality Surface quality
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| GB/T 7714 | Deng, Yicong , Chen, Desen , Li, Titao et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode [J]. | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
| MLA | Deng, Yicong et al. "Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode" . | MICRO AND NANOSTRUCTURES 199 (2025) . |
| APA | Deng, Yicong , Chen, Desen , Li, Titao , Zhu, Minmin , Xu, Xiaorui , Zhang, Haizhong et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode . | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
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Solar-blind ultraviolet photodetectors (SBUV-PDs) are utilized in various military and civilian fields, encompassing missile tracking, high-voltage detection, and fire warning systems. Ga2O3 emerges as the prime candidate for such PDs owing to its elevated bandgap, remarkable thermal stability, and facile fabrication process. The metal-semiconductor-metal (MSM) structure garners attention for its swift response time and straightforward preparation, thus becoming a focal point among diverse PD architectures. Nevertheless, the metal surface impedes optical absorption, thereby diminishing the quantum efficiency of the PD. In this work, we introduce a nanograting onto the Ga2O3 surface, which results in a 747-fold increase in responsivity in the SBUV region compared to a normal MSM grating-free structure. Metal gratings can induce surface plasmon polaritons (SPP), thereby augmenting the optical absorption of the PD and stimulating hot electrons to increase photocurrent. However, the broadband response caused by the introduction of metal gratings is a common problem. By optimizing the doping concentration of the Ga2O3 absorption layer, adjusting the incident light intensity, and reverse voltage, the problem of broadband response has been solved. The responsivity of the device in the non-SBUV region is suppressed 24-fold. This methodology holds promise as a reliable approach for fabricating high-performance SBUV-PDs.
Keyword ：
Ga2O3 Ga2O3 metal-semiconductor-metal (MSM) metal-semiconductor-metal (MSM) nanograting nanograting photodetector (PD) photodetector (PD) plasmon plasmon responsivity responsivity
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| GB/T 7714 | Li, Jialong , Yang, Dan , Lu, Xiaoqiang et al. Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings [J]. | IEEE SENSORS JOURNAL , 2025 , 25 (1) : 434-442 . |
| MLA | Li, Jialong et al. "Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings" . | IEEE SENSORS JOURNAL 25 . 1 (2025) : 434-442 . |
| APA | Li, Jialong , Yang, Dan , Lu, Xiaoqiang , Zhang, Haizhong , Zhu, Minmin . Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings . | IEEE SENSORS JOURNAL , 2025 , 25 (1) , 434-442 . |
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Aluminum alloys are renowned for their lightweight nature, resistance to oxidation, and impressive mechanical properties. Despite these advantages, their mechanical performance deteriorates significantly in extreme environments. Herein, we present an innovative solution by developing aluminum matrix composites (AMCs) that incorporate 3D printed alumina ceramic lattices. Our investigation demonstrates a remarkable 112.4 % increase in the strength of AMCs compared to pure aluminum, with a concurrent 54.8 % improvement in modulus under identical conditions. Additionally, as the volume fraction of the ceramic lattice varies from 0.21 to 0.45, the modulus of AMCs exhibits a noteworthy increase, ranging from 96.2 to 106.5 GPa, surpassing that of pure aluminum (68.8 GPa). Notably, even at temperatures of up to 300 degrees C, the strength of the Al2O3-Al composite matrix remains stable at 477.3 MPa. X-ray computed tomography analysis elucidates that the structural integrity of these composites predominantly relies on the load-bearing capacity of the ceramic lattices, complemented by the damping effect provided by the aluminum matrix. This innovative approach not only paves the way for scalable production of high-strength metal alloys in the industrial sector but also holds promise for substantial economic opportunities in the near future.
Keyword ：
Alumina lattice Alumina lattice Aluminum matrix composites Aluminum matrix composites Stereolithography 3D printing Stereolithography 3D printing Strength Strength X-ray computed tomography X-ray computed tomography
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| GB/T 7714 | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites [J]. | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 : 126-132 . |
| MLA | Zhu, Minmin et al. "Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites" . | JOURNAL OF MANUFACTURING PROCESSES 139 (2025) : 126-132 . |
| APA | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng , Yang, Dan , Zhang, Haizhong , Wang, Linghua et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites . | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 , 126-132 . |
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Ga2O3 -based solar-blind photodetectors (SBPDs) with typical Schottky structure usually exhibit low responsivity and rapid saturation as reverse bias increase in the lack of avalanche gain. In this study, large-area photosensitive Ga2O3 single-crystalline films were homoepitaxially grown by MOCVD, enabling the fabrication of high-performance SBPDs. At a low bias of -5 V, the device exhibits an ultrahigh photoresponsivity of 27.5 A/W and a photo-to-dark current ratio of 2.4 x 10(5) with an ultralow dark current of 3.74 x 10(-8) A/cm (2) , superior to most similar Ga2O3 SBPDs reported to date. Furthermore, without sacrificing the response speed (t(r) = 100 ns, t(d) = 240.5 mu s), the device attained a peak external quantum efficiency of 1.5 x 10 (4) %. This stems from the ultrahigh photoconductive-like gain caused by significant mobility differences of photogenerated carriers under reverse bias in high-quality Ga2O3 homo-epilayer.
Keyword ：
Dark current Dark current Ga2O3 Ga2O3 Gallium Gallium high gain high gain homoepitaxy homoepitaxy MOCVD MOCVD Performance evaluation Performance evaluation Photoconductivity Photoconductivity Photodiodes Photodiodes Photonic band gap Photonic band gap SBPD SBPD Schottky barriers Schottky barriers Schottky photodiode Schottky photodiode Substrates Substrates X-ray scattering X-ray scattering
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| GB/T 7714 | Zheng, Zhenjie , Lu, Yaoping , Zhuang, Jiachang et al. Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode With Low Dark Current [J]. | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (2) : 143-146 . |
| MLA | Zheng, Zhenjie et al. "Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode With Low Dark Current" . | IEEE ELECTRON DEVICE LETTERS 46 . 2 (2025) : 143-146 . |
| APA | Zheng, Zhenjie , Lu, Yaoping , Zhuang, Jiachang , Jia, Lemin , Zhu, Shoudong , Chen, Duanyang et al. Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode With Low Dark Current . | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (2) , 143-146 . |
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This research employs first-principles calculations to address the challenges presented by processing complexity and low damage tolerance in transition metal borides. The study focuses on designing and investigating MAB phase compounds of M4AlB4 (M = Cr, Mo, W). We conduct a comprehensive assessment of the stability, phononic, electronic, elastic, and optical properties of Cr4AlB4, Mo4AlB4, and W4AlB4. The calculated results reveal formation enthalpies of -0.516, -0.490, and -0.336 eV per atom for Cr4AlB4, Mo4AlB4, and W4AlB4, respectively. Notably, W4AlB4 emerges as a promising precursor material for MABene synthesis, demonstrating exceptional thermal shock resistance. The dielectric constants epsilon(1)(0) were determined as 126.466, 80.277, and 136.267 for Cr4AlB4, Mo4AlB4, and W4AlB4, respectively. Significantly, W4AlB4 exhibits remarkably high reflectivity (>80%) within the wavelength range of 19.84-23.6 nm, making it an ideal candidate for extreme ultraviolet (EUV) reflective coatings. The insights gleaned from this study provide a strong research framework and theoretical guidance for advancing the synthesis of innovative MAB-phase compounds.
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| GB/T 7714 | Lu, Yaoping , Li, Titao , Li, Kangjie et al. Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W) [J]. | RSC ADVANCES , 2024 , 14 (2) : 1186-1194 . |
| MLA | Lu, Yaoping et al. "Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W)" . | RSC ADVANCES 14 . 2 (2024) : 1186-1194 . |
| APA | Lu, Yaoping , Li, Titao , Li, Kangjie , Hao, Derek , Chen, Zuxin , Zhang, Haizhong . Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W) . | RSC ADVANCES , 2024 , 14 (2) , 1186-1194 . |
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The next-generation computing system is required to perform 10(18) floating point operations per second to address the exponential growth of data from sensory terminals, driven by advancements in artificial intelligence and the Internet of Things. Even if a supercomputer possesses the capability to execute these operations, managing heat dissipation becomes a significant challenge when the electronic synapse array reaches a comparable scale with the human neuron network. One potential solution to address thermal hotspots in electronic devices is the use of vertically-aligned hexagonal boron nitride (h-BN) known for its high thermal conductivity. In this study, we have developed textured h-BN films using the high power impulse magnetron sputtering technique. The thermal conductivity of the oriented h-BN film is approximately 354% higher than that of the randomly oriented counterpart. By fabricating electronic synapses based on the textured h-BN thin film, we demonstrate various bio-synaptic plasticity in this device. Our results indicate that orientation engineering can effectively enable h-BN to function as a suitable self-heat dissipation layer, thereby paving the way for future wearable memory devices, solar cells, and neuromorphic devices.
Keyword ：
boron nitride boron nitride high thermal conductivity high thermal conductivity low-power memory low-power memory neuromorphic computing neuromorphic computing vertically-aligned vertically-aligned
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| GB/T 7714 | Zhang, Haizhong , Ju, Xin , Jiang, Haitao et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor [J]. | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) : 1907-1914 . |
| MLA | Zhang, Haizhong et al. "Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor" . | SCIENCE CHINA-MATERIALS 67 . 6 (2024) : 1907-1914 . |
| APA | Zhang, Haizhong , Ju, Xin , Jiang, Haitao , Yang, Dan , Wei, Rongshan , Hu, Wei et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor . | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) , 1907-1914 . |
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In this work, t he i nfluence o f d ifferent s urface treatments on the breakdown voltage (BV) and the specific on-state resistance (R-on,R-sp) of the beta-phase gallium oxide (beta-Ga2O3) Schottky barrier diodes (SBD) is investigated. The results show that after fast inductively coupled plasma (ICP) etching, slow ICP etching and piranha treatment, the unreliable surface of beta-Ga2O3 can be effectively removed with small surface roughness and little co-products, thus increasing BV from 141 V to 724 V and reducing R-on,R- sp from 5.1 m Omega center dot cm(2) to 1.2 m Omega center dot cm(2). Consequently, the results validate the effectiveness of the surface treatments and can provide guidance for device process optimization.
Keyword ：
Beta-phase gallium oxide Beta-phase gallium oxide Inductively coupled plasma etching Inductively coupled plasma etching Schottky barrier diode Schottky barrier diode Surface quality Surface quality
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Ye, Shurui et al. Demonstration of Surface Treatment for β-Ga2O3 Schottky Barrier Diode with High Breakdown Voltage and Low Specific On-Resistance [J]. | 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 , 2024 : 240-243 . |
| MLA | Xu, Xiaorui et al. "Demonstration of Surface Treatment for β-Ga2O3 Schottky Barrier Diode with High Breakdown Voltage and Low Specific On-Resistance" . | 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 (2024) : 240-243 . |
| APA | Xu, Xiaorui , Deng, Yicong , Ye, Shurui , Chen, Desen , Li, Titao , Zhu, Minmin et al. Demonstration of Surface Treatment for β-Ga2O3 Schottky Barrier Diode with High Breakdown Voltage and Low Specific On-Resistance . | 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 , 2024 , 240-243 . |
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Sensors, functioning as primary conveyors of perceptual data, stand ready to illuminate the landscape of the intelligent era. Barium titanate, an exceedingly pivotal class of ferroelectric materials for sensor applications, has attracted considerable attention from both commercial and industrial sectors in recent years. Against this backdrop, this paper embarks on a comprehensive examination of sensors founded upon barium titanate across a spectrum of applications. Our investigation commences with a historical analysis of ferroelectric materials, with a specific emphasis on the developmental trajectory of barium titanate. Subsequently, an in-depth exposition elucidates the attributes and manufacturing processes linked to barium titanate materials, providing readers with insight into the structural and manufacturing aspects of these materials. Ultimately, we introduce a diverse array of sensors tailored to distinct functions within a myriad of domains. With the progression of science and technology, sensors have evolved into indispensable components within the domain of artificial intelligence. This paper primarily undertakes a thorough examination of sensors utilizing barium titanate across a spectrum of applications. To commence, the properties and preparation of barium titanate are delineated, succeeded by an exploration of diverse sensor applications and the prospective developments. image
Keyword ：
barium titanate barium titanate ferroelectric ferroelectric piezoelectric piezoelectric pyroelectric pyroelectric sensor sensor
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| GB/T 7714 | Deng, Caozhuang , Zhang, Yi , Yang, Dan et al. Recent Progress on Barium Titanate-Based Ferroelectrics for Sensor Applications [J]. | ADVANCED SENSOR RESEARCH , 2024 , 3 (6) . |
| MLA | Deng, Caozhuang et al. "Recent Progress on Barium Titanate-Based Ferroelectrics for Sensor Applications" . | ADVANCED SENSOR RESEARCH 3 . 6 (2024) . |
| APA | Deng, Caozhuang , Zhang, Yi , Yang, Dan , Zhang, Haizhong , Zhu, Minmin . Recent Progress on Barium Titanate-Based Ferroelectrics for Sensor Applications . | ADVANCED SENSOR RESEARCH , 2024 , 3 (6) . |
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Improvements in phase stability and dielectric characteristics can broaden the applications of zirconia in ceramics. Herein, a series of Y2O3-stabilized zirconia (YSZ) ceramics are synthesized using solid-state sintering, followed by an investigation into their phase evolution, grain size, dielectric constant, and breaking field. As the Y2O3 content increases from 0 wt% to 4 wt%, the as-grown YSZ ceramics undergo a distinct phase transformation, transitioning from monoclinic to monoclinic + tetragonal and further to monoclinic + tetragonal + cubic, before finally returning to monoclinic + cubic. Significant changes occur in the internal microstructure and grain size of the ceramics as the phase composition alters, resulting in a reduction in grain size from 3.17 mu m to 0.27 mu m. Moreover, their dielectric constants exhibit an increasing trend as the Y2O3 content increases, rising from 3.92 to 13.2. Importantly, the dielectric breakdown field of these YSZ ceramics shows a similar variation to the phase evolution, ranging from 0.11 to 0.15 MV/cm. This study sheds light on the phase evolution and dielectric properties of YSZ ceramics, offering an efficient strategy for enhancing their dielectric performances.
Keyword ：
breaking field breaking field dielectric constant dielectric constant grain size grain size phase transformation phase transformation Y2O3-doped zirconia ceramics Y2O3-doped zirconia ceramics
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| GB/T 7714 | Gao, Lanfeng , Shao, Yong , Xin, Yangmei et al. Influence of Y2O3 Doping on Phase Evolution and Dielectric Characteristics of ZrO2 Ceramics [J]. | MICROMACHINES , 2024 , 15 (8) . |
| MLA | Gao, Lanfeng et al. "Influence of Y2O3 Doping on Phase Evolution and Dielectric Characteristics of ZrO2 Ceramics" . | MICROMACHINES 15 . 8 (2024) . |
| APA | Gao, Lanfeng , Shao, Yong , Xin, Yangmei , Yang, Dan , Zhang, Haizhong , Zhu, Minmin et al. Influence of Y2O3 Doping on Phase Evolution and Dielectric Characteristics of ZrO2 Ceramics . | MICROMACHINES , 2024 , 15 (8) . |
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