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学者姓名：张海忠
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Abstract ：
Polymer matrix composites with excellent thermal management performance have emerged as remarkable materials in the realms of microelectronic devices and wireless communication technologies. However, achieving high thermal conductivity in most composites often requires a high filling load, which will compromise other desirable properties. Herein, utilizing physical foaming and vacuum infiltration methods, we introduce a 3D honeycomb composite consisting of surface-hydroxylated hexagonal boron nitride (OH-BN) and epoxy. The 3D OH-BN honeycomb foam in the composite features a lightweight design (0.33 g/cm3), high strength (7178 times its own weight) and prominent heat transfer performance. Significantly, these composites achieve notable thermal properties, including high through-plane thermal conductivity (2.073 W m−1 K−1) and relatively low thermal resistance (0.995 °C/W) at a reduced filling load (17.2 vol%). In comparison with pure epoxy, the through-plane thermal conductivity is enhanced by an impressive 894 %, while the thermal resistance is reduced to 1/9.4 of that observed in pure epoxy. Besides, the 3D honeycomb composites combine outstanding mechanical performance, low dielectric properties and excellent insulation, underscoring their potential in the field of thermal management applications in microelectronic devices, wireless communication systems and integrated circuits. © 2024
Keyword ：
Boron nitride Boron nitride Dielectric properties of solids Dielectric properties of solids Filled polymers Filled polymers Fillers Fillers Foams Foams Heat transfer Heat transfer Honeycomb structures Honeycomb structures III-V semiconductors III-V semiconductors Nitrides Nitrides Polymer matrix composites Polymer matrix composites Temperature control Temperature control Thermal conductivity Thermal conductivity Thermal insulation Thermal insulation
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| GB/T 7714 | Liu, Guang , Ding, Ao , Xu, Pingfan et al. Thermal conductivity of epoxy composites containing 3D honeycomb boron nitride filler [J]. | Chemical Engineering Journal , 2024 , 489 . |
| MLA | Liu, Guang et al. "Thermal conductivity of epoxy composites containing 3D honeycomb boron nitride filler" . | Chemical Engineering Journal 489 (2024) . |
| APA | Liu, Guang , Ding, Ao , Xu, Pingfan , Zhu, Minmin , Zhang, Haizhong , Zheng, Yuying et al. Thermal conductivity of epoxy composites containing 3D honeycomb boron nitride filler . | Chemical Engineering Journal , 2024 , 489 . |
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This research employs first-principles calculations to address the challenges presented by processing complexity and low damage tolerance in transition metal borides. The study focuses on designing and investigating MAB phase compounds of M4AlB4 (M = Cr, Mo, W). We conduct a comprehensive assessment of the stability, phononic, electronic, elastic, and optical properties of Cr4AlB4, Mo4AlB4, and W4AlB4. The calculated results reveal formation enthalpies of -0.516, -0.490, and -0.336 eV per atom for Cr4AlB4, Mo4AlB4, and W4AlB4, respectively. Notably, W4AlB4 emerges as a promising precursor material for MABene synthesis, demonstrating exceptional thermal shock resistance. The dielectric constants epsilon(1)(0) were determined as 126.466, 80.277, and 136.267 for Cr4AlB4, Mo4AlB4, and W4AlB4, respectively. Significantly, W4AlB4 exhibits remarkably high reflectivity (>80%) within the wavelength range of 19.84-23.6 nm, making it an ideal candidate for extreme ultraviolet (EUV) reflective coatings. The insights gleaned from this study provide a strong research framework and theoretical guidance for advancing the synthesis of innovative MAB-phase compounds.
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| GB/T 7714 | Lu, Yaoping , Li, Titao , Li, Kangjie et al. Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W) [J]. | RSC ADVANCES , 2024 , 14 (2) : 1186-1194 . |
| MLA | Lu, Yaoping et al. "Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W)" . | RSC ADVANCES 14 . 2 (2024) : 1186-1194 . |
| APA | Lu, Yaoping , Li, Titao , Li, Kangjie , Hao, Derek , Chen, Zuxin , Zhang, Haizhong . Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W) . | RSC ADVANCES , 2024 , 14 (2) , 1186-1194 . |
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In this work, a novel gallium oxide (Ga2O3) vertical FinFET with integrated Schottky barrier diode (SBD-FinFET), which achieves low conduction losses, is proposed. In the reverse conduction state, the integrated SBD can provide additional low-resistance path to conduct reverse current, hence achieving low reverse conduction loss. In the switching state, the SBD-FinFET can also reduce gate-drain capacitance and gate charge, thus featuring fast switching speed and low switching losses. Furthermore, in the other states, the integrated SBD of the SBD-FinFET is in the OFF state, which does not significantly affect the device characteristics. The well-calibrated simulation results show that when compared with the state-of-the-art FinFET with integrated Fin channel and ohmic contact diode (FOD-FinFET), the SBD-FinFET can reduce reverse conduction loss, turn-on loss, and turn-off loss by 25%, 19%, and 22%, respectively, while other characteristics retain almost unchanged.
Keyword ：
beta-gallium oxide (Ga2O3) beta-gallium oxide (Ga2O3) conduction losses conduction losses Electric breakdown Electric breakdown Field effect transistors Field effect transistors FinFET FinFET FinFETs FinFETs Gallium Gallium Logic gates Logic gates Schottky barrier diode (SBD) Schottky barrier diode (SBD) Schottky barriers Schottky barriers Schottky diodes Schottky diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) : 2530-2535 . |
| MLA | Xu, Xiaorui et al. "Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 4 (2024) : 2530-2535 . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Xu, Xiaohui , Yang, Dan , Zhu, Minmin et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) , 2530-2535 . |
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High-performance electro-optic (EO) materials greatly enhance modulators and switches in various photonic applications. We investigate the evolution of the tolerance factor (t) and EO coefficient (rc) in A-site and B-site doped BaTiO3 (BT) thin films. Our analysis reveals that cation transmutation has a remarkable impact on their dielectric constant, spontaneous polarization, optical band gap, and EO coefficient. Notably, Pb-doped BT samples exhibit an even higher rc value of 336.5 pm/V, representing a nearly 60% increase compared to pure BT and approximately 11 times larger than that of LiNbO3. This substantial improvement in EO performance can be attributed to enhanced local structural heterogeneity resulting from cation dopants. Furthermore, infusing dopants in BT also result in good structural uniformity and reliable EO performances, regardless of temperature and frequency. Our study offers valuable insights into doping engineering for obtaining functional perovskite oxides, enabling the development of power-efficient, ultra-compact integrated nanophotonic devices.
Keyword ：
barium titanate barium titanate electro-optic electro-optic nanophotonic device nanophotonic device Pockels coefficient Pockels coefficient tolerance factor tolerance factor
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| GB/T 7714 | Zhu, Minmin , Zhang, Xianrong , Wei, Can et al. Chemical design of barium titanate thin films for nanophotonic devices [J]. | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) : 6263-6274 . |
| MLA | Zhu, Minmin et al. "Chemical design of barium titanate thin films for nanophotonic devices" . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY 107 . 9 (2024) : 6263-6274 . |
| APA | Zhu, Minmin , Zhang, Xianrong , Wei, Can , Yi, Xiaoyuan , Yang, Dan , Zhang, Haizhong et al. Chemical design of barium titanate thin films for nanophotonic devices . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) , 6263-6274 . |
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The next-generation computing system is required to perform 10(18) floating point operations per second to address the exponential growth of data from sensory terminals, driven by advancements in artificial intelligence and the Internet of Things. Even if a supercomputer possesses the capability to execute these operations, managing heat dissipation becomes a significant challenge when the electronic synapse array reaches a comparable scale with the human neuron network. One potential solution to address thermal hotspots in electronic devices is the use of vertically-aligned hexagonal boron nitride (h-BN) known for its high thermal conductivity. In this study, we have developed textured h-BN films using the high power impulse magnetron sputtering technique. The thermal conductivity of the oriented h-BN film is approximately 354% higher than that of the randomly oriented counterpart. By fabricating electronic synapses based on the textured h-BN thin film, we demonstrate various bio-synaptic plasticity in this device. Our results indicate that orientation engineering can effectively enable h-BN to function as a suitable self-heat dissipation layer, thereby paving the way for future wearable memory devices, solar cells, and neuromorphic devices.
Keyword ：
boron nitride boron nitride high thermal conductivity high thermal conductivity low-power memory low-power memory neuromorphic computing neuromorphic computing vertically-aligned vertically-aligned
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| GB/T 7714 | Zhang, Haizhong , Ju, Xin , Jiang, Haitao et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor [J]. | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) : 1907-1914 . |
| MLA | Zhang, Haizhong et al. "Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor" . | SCIENCE CHINA-MATERIALS 67 . 6 (2024) : 1907-1914 . |
| APA | Zhang, Haizhong , Ju, Xin , Jiang, Haitao , Yang, Dan , Wei, Rongshan , Hu, Wei et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor . | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) , 1907-1914 . |
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In this Letter, a Ga2O3 vertical Schottky barrier diode (SBD) with self-aligned field plate and mesa termination is fabricated and studied. The combination of field plate and mesa termination can effectively make the electric field distribution uniform in the termination, and thus the proposed SBD features high breakdown voltage (BV). Moreover, to eliminate alignment deviation and simplify the fabrication process, a self-aligned etching process is developed. The experimental results show that a low specific on-resistance of 4.405 mΩ·cm2 and a high BV of 3113 V can be simultaneously derived on the proposed SBD, yielding a high power figure of merit of 2.2 GW/cm2. Meanwhile, a considerably low forward voltage of 1.53 V at 100 A/cm2 is also achieved, demonstrating the low conduction loss of the device. © 2024 Author(s).
Keyword ：
Electric fields Electric fields Etching Etching Gallium compounds Gallium compounds Schottky barrier diodes Schottky barrier diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination [J]. | Applied Physics Letters , 2024 , 125 (2) . |
| MLA | Xu, Xiaorui et al. "Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination" . | Applied Physics Letters 125 . 2 (2024) . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Chen, Duanyang , Wang, Fangzhou , Yu, Cheng et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination . | Applied Physics Letters , 2024 , 125 (2) . |
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Mainstream high-k gate materials, such as SiO2, Al2O3, and HfZrO2, are in demand for modern electronics. However, these dielectrics possess lower thermal conductivity, significantly limiting thermal dissipation in electronic devices. Herein, we propose the utilization of complementary metal-oxide semiconductor- (CMOS) compatible high power impulse magnetron sputtering (HiPIMS) for the mass production of highly textured hexagonal boron nitride (h-BN) on (100)-, (110)-, and (111)-oriented SrTiO3 substrates. The as-prepared films exhibit distinct vertical alignments, as evidenced by HRTEM and FTIR analysis. Notably, the R value, ranging from 0.46 to 0.50, is associated with the stress in the film. Importantly, distinct anisotropies in thermal conductivity, dielectric constant, and optical band gap are observed. Furthermore, the values of thermal conductivity in these highly textured h-BN films are 4.5, 5.7, and 5.3 Wm- 1K-1, which is almost three times larger than those of SiO2 (1.4 Wm- 1K-1) and Al2O3 (1.35 Wm- 1K-1), and even an order of magnitude larger than that of HfZrO2 (0.67 Wm- 1K-1). The combination of excellent dielectric characteristics, favorable thermal conductivity, and superior stability over a broad temperature range makes this novel material outperform conventional dielectric gate materials in high-power electronics applications.
Keyword ：
Boron nitride thin films Boron nitride thin films Dielectric dispersion Dielectric dispersion Highly textured Highly textured HiPIMS HiPIMS Self-dissipating electronics Self-dissipating electronics Thermal conductivity Thermal conductivity
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| GB/T 7714 | Zhu, Minmin , Shao, Yong , Xin, Yangmei et al. Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics [J]. | VACUUM , 2024 , 225 . |
| MLA | Zhu, Minmin et al. "Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics" . | VACUUM 225 (2024) . |
| APA | Zhu, Minmin , Shao, Yong , Xin, Yangmei , Yang, Dan , Lu, Xiaoqiang , Zhang, Haizhong . Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics . | VACUUM , 2024 , 225 . |
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Significant advancements in artificial neural networks (ANNs) have driven the rapid progress of artificial intelligence and machine learning. While current feedforward neural networks primarily handle static data, recurrent neural networks (RNNs) are designed for dynamical systems. However, RNNs demand extensive training on specific tasks, limiting their scalability and affordability for edge computing. Physical reservoir computing (RC) offers an alternative approach by mapping inputs into high-dimensional states, allowing for pattern analysis within a fixed reservoir. Unlike RNNs, RC is well-suited for temporal and sequential data processing with rapid speed and low training costs. This makes RC suitable for hardware implementation across various research domains. Nonetheless, existing demonstrations of RC remain constrained to small-scale device arrays. As electronic synapse arrays aim to approach very large-scale and highly complex hardware as in the human brain, managing heat dissipation becomes a formidable challenge. In this work, we successfully developed the neuristors based on textured h-BN films, prepared using a CMOS-compatible technique, and constructed a physical RC system based on as-fabricated devices. Our approach leverages vertically aligned BN to provide aligned diffusion paths for the reproducible migration process of metal ions from the electrodes and offers a potential solution for thermal management in electronic devices. This achievement highlights the promising potential of our neuristors for future high-density and energy-efficient neuromorphic computing. © 2024 Elsevier B.V.
Keyword ：
Boron nitride Boron nitride Highly textured Highly textured High thermal conductivity High thermal conductivity Neuromorphic device Neuromorphic device Reservoir computing Reservoir computing
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| GB/T 7714 | Zhang, H. , Li, J. , Ju, X. et al. Highly textured CMOS-compatible hexagonal boron nitride-based neuristor for reservoir computing [J]. | Chemical Engineering Journal , 2024 , 498 . |
| MLA | Zhang, H. et al. "Highly textured CMOS-compatible hexagonal boron nitride-based neuristor for reservoir computing" . | Chemical Engineering Journal 498 (2024) . |
| APA | Zhang, H. , Li, J. , Ju, X. , Jiang, J. , Wu, J. , Chi, D. et al. Highly textured CMOS-compatible hexagonal boron nitride-based neuristor for reservoir computing . | Chemical Engineering Journal , 2024 , 498 . |
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本工作通过微磁学模拟数值计算证实了以超低电流密度驱动拓扑绝缘体/楔形铁磁异质结构实现确定性无场切换是可行的。此外，我们研究了楔形铁磁层尺寸、界面Dzyaloshinskii-Moriya相互作用、类场转矩和倾斜垂直磁各向异性的偏离极角等因素对自旋轨道矩无场切换的影响。综合优化各个因素后，拓扑绝缘体(BiSb)/楔形铁磁异质结构的临界切换电流密度最低可降至9.0×10~6 A/cm~2,比传统重金属/铁磁结构的临界切换电流密度降低了1～2个数量级。这项研究对于推动低功耗自旋轨道矩磁性随机存储器的产业化应用具有重要的意义。
Keyword ：
垂直磁各向异性 垂直磁各向异性 微磁学模拟 微磁学模拟 拓扑绝缘体 拓扑绝缘体 无场切换 无场切换 自旋轨道矩 自旋轨道矩
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| GB/T 7714 | 邱鹏 , 朱敏敏 , 胡炜 et al. BiSb/楔形铁磁结构中的自旋轨道矩无场切换 [J]. | 功能材料与器件学报 , 2024 , 30 (04) : 197-205 . |
| MLA | 邱鹏 et al. "BiSb/楔形铁磁结构中的自旋轨道矩无场切换" . | 功能材料与器件学报 30 . 04 (2024) : 197-205 . |
| APA | 邱鹏 , 朱敏敏 , 胡炜 , 张海忠 . BiSb/楔形铁磁结构中的自旋轨道矩无场切换 . | 功能材料与器件学报 , 2024 , 30 (04) , 197-205 . |
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Ga2O3-based solar-blind photodetectors (SBPDs) with typical Schottky structure usually exhibit low responsivity and rapid saturation as reverse bias increase in the lack of avalanche gain. In this study, large-area photosensitive Ga2O3 single-crystalline films were homoepitaxially grown by MOCVD, enabling the fabrication of high-performance SBPDs. At a low bias of -5 V, the device exhibits an ultrahigh photoresponsivity of 27.5 A/W and a photo-to-dark current ratio of 2.4 × 105 with an ultralow dark current of 3.74 × 10-8 A/cm2, superior to most similar Ga2O3 SBPDs reported to date. Furthermore, without sacrificing the response speed (tr = 100 ns, td = 240.5 μs), the device attained a peak external quantum efficiency of 1.5 × 104%. This stems from the ultrahigh photoconductive-like gain caused by significant mobility differences of photogenerated carriers under reverse bias in high-quality Ga2O3 homo-epilayer. © 2024 IEEE.
Keyword ：
Ga2O3 Ga2O3 high gain high gain homoepitaxy homoepitaxy SBPD SBPD Schottky photodiode Schottky photodiode
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| GB/T 7714 | Zheng, Z. , Lu, Y. , Zhuang, J. et al. Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode with Low Dark Current [J]. | IEEE Electron Device Letters , 2024 , 46 (2) : 143-146 . |
| MLA | Zheng, Z. et al. "Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode with Low Dark Current" . | IEEE Electron Device Letters 46 . 2 (2024) : 143-146 . |
| APA | Zheng, Z. , Lu, Y. , Zhuang, J. , Jia, L. , Zhu, S. , Chen, D. et al. Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode with Low Dark Current . | IEEE Electron Device Letters , 2024 , 46 (2) , 143-146 . |
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