Enhancing the Light Absorption of the InGaAs/InP Photodetector by Integrating Metal Grating Arrays - Details

author：

Han, Lei (Han, Lei.) ^[1] | Yang, Dang (Yang, Dang.) ^[2] (Scholars：杨丹) | Li, Zhien (Li, Zhien.) ^[3] | Zhu, Minmin (Zhu, Minmin.) ^[4] (Scholars：朱敏敏) | Lu, Xiao Qiang (Lu, Xiao Qiang.) ^[5] (Scholars：卢孝强)

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Abstract：

This　paper　proposes　a　new　UTC-PD　structure,　which　integrates　metal　gratings　on　top　of　the　traditional　UTC-PD,　to　improve　the　responsivity　of　the　photodetectors　while　ensuring　a　high　response　speed.　In　addition,　two　types　of　gold　gratings　are　introduced　on　the　surface　of　InGaAs/InP　UTC-PD,　and　light　absorption　rates　of　68%　and　90%　can　be　obtained　respectively　at　a　wavelength　of　1550　nm,　compared　with　planar　structure　photodetectors　(without　metal　gratings),　the　light　absorption　is　improved　by　4.25　times　and　6　times　respectively.　©　2025　IEEE.

Keyword：

Diffraction gratings Light absorption Photodetectors Photonics Photons Plasmonics Semiconducting indium Semiconducting indium gallium arsenide

Community：

[ 1 ] [Han, Lei]Fuzhou University, School of Physics and Information Engineering, Fuzhou; 350116, China
[ 2 ] [Yang, Dang]Fuzhou University, School of Physics and Information Engineering, Fuzhou; 350116, China
[ 3 ] [Yang, Dang]Fuzhou University, School of Advanced Manufacturing, Fuzhou; 350116, China
[ 4 ] [Li, Zhien]Fuzhou University, School of Physics and Information Engineering, Fuzhou; 350116, China
[ 5 ] [Zhu, Minmin]Fuzhou University, School of Physics and Information Engineering, Fuzhou; 350116, China
[ 6 ] [Zhu, Minmin]Fuzhou University, School of Advanced Manufacturing, Fuzhou; 350116, China
[ 7 ] [Lu, Xiao Qiang]Fuzhou University, School of Physics and Information Engineering, Fuzhou; 350116, China