The　fabrication　of　metal　bumps　with　ultrafine　pitch　plays　a　crucial　role　in　the　interconnection　between　Micro-LED　arrays　and　driving　backplanes,　enabling　high-resolution　and　high-pixel-density　Micro-LED　displays.　This　paper　proposes　a　fabrication　strategy　for　high-density　and　highly　uniform　Cu-SnAg　bump　arrays　on　Micro-LED　arrays.　The　approach　combines　electroplating　growth　of　bumps　with　ion　beam　etching　(IBE)　for　seed　layer　removal.　The　effects　of　soft　bake　time,　surface　wettability,　electroplating　duration,　and　IBE　parameters　on　the　microstructure　and　uniformity　of　Cu-SnAg　bumps　were　systematically　analyzed.　Results　indicate　that　plasma　treatment　for　7　min　enhances　the　wettability　of　the　photoresist　surface　and　ensures　cleaner　removal　of　residual　adhesive.　Particles　generated　on　the　Cu-SnAg　bump　surfaces　during　etching　can　be　effectively　controlled　by　optimizing　etching　time.　Ultimately,　a　Cu-SnAg　bump　array　with　an　8　μm　pitch　and　a　1920　×　1080　configuration　was　achieved　on　Micro-LED　arrays,　exhibiting　a　nonuniformity　value　of　approximately　3.78　%.　These　bumps　were　successfully　bonded　to　an　analog　CMOS　backplane,　successfully　illuminating　the　Micro-LED　arrays.　At　an　operating　voltage　of　4.0　V,　the　red　Micro-LED　achieved　a　luminance　of　45805　cd/m2.　This　Cu-SnAg　bump　fabrication　strategy　is　advantageous　for　the　interconnection　of　Micro-LED　displays.　©　2025　Elsevier　Ltd