Wafer-scale transfer-free patterned graphene transparent electrodes for GaN-based LEDs: a universal technique towards different substrates - Details

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With　the　continuous　development　of　graphene　in　the　field　of　electronic　devices,　it　is　necessary　to　further　develop　wafer-scale　high-quality　graphene　preparation　technique.　A　patterning　preparation　technique　for　2-inch　wafer-scale　transfer-free　graphene　is　reported　in　this　paper,　which　is　innovatively　applicable　to　a　variety　of　substrates.　Based　on　this　technique,　a　2-inch　wafer-scale　light-emitting　diode　(LED)　chip　with　graphene　transparent　electrodes　was　fabricated.　The　results　show　that　the　prepared　graphene　has　high　quality　and　uniformity,　and　plays　a　good　role　in　improving　electrode　contact　and　current　spreading.　In　addition,　the　LEDs　exhibit　excellent　electrical　and　optical　performance　and　have　a　good　yield.　This　wafer-scale　graphene　preparation　technique　avoids　the　damage　to　graphene　caused　by　the　transfer　process　and　the　patterning　process,　which　is　scalable　and　suitable　for　real　applications.　©　The　Author(s)　2025.

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[ 1 ] [Tang P.]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, China
[ 2 ] [Sun J.]College of Physics and Information Engineering, Fuzhou University and Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, China
[ 3 ] [Sun J.]Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden
[ 4 ] [Du Z.]School of Physics and Electronic Information, Weifang University, Weifang, China
[ 5 ] [Fang A.]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, China
[ 6 ] [Liu J.]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, China
[ 7 ] [Wang R.]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, China
[ 8 ] [Pan G.]Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
[ 9 ] [Xun M.]Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
[ 10 ] [Guo W.]Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, China

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npj 2D Materials and Applications

ISSN： 2397-7132

Year： 2025

Issue： 1

Volume： 9

9 . 2 0 0

JCR@2023

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 1

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