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author:

Zhu, Benchao (Zhu, Benchao.) [1] | Chen, Guohao (Chen, Guohao.) [2] | Li, Jiawei (Li, Jiawei.) [3] | Zou, Peng (Zou, Peng.) [4] | Sun, Haokai (Sun, Haokai.) [5] | Lin, Zhifeng (Lin, Zhifeng.) [6] | Chen, Jianli (Chen, Jianli.) [7]

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Abstract:

Legalization holds significant importance in VLSI physical design, as it significantly influences the manufacturability and reliability of circuits. Recently, advanced foundry nodes introduced complex constraints in standard-cell legalization, which makes legalization even harder. In this paper, we develop a legalization framework with design rule constraints enhanced by Monte-Carlo-Based cell priority optimization. We first handle abnormal density distribution to reduce the subsequent legalization's hardness. Then, we propose an interval-assisted sequential legalization algorithm considering multiple design rule constraints with a Monte-Carlo-Based cell priority decision technique. Besides, based on the characteristics and complexity of different design rule constraints, we present a refinement phase to handle the remaining design rule constraints with corresponding detectors. Compared with a leading commercial tool, experiments on industrial benchmarks show that our legalization framework achieves 11% smaller average displacement, 15% smaller maximum displacement, 1.63× speedup, and 13% fewer remaining design rule violations on average. © 2025 IEEE.

Keyword:

Integrated circuit design Machine design Monte Carlo methods Optimization VLSI circuits

Community:

  • [ 1 ] [Zhu, Benchao]Fudan University, School of Microelectronics, China
  • [ 2 ] [Chen, Guohao]Fudan University, School of Microelectronics, China
  • [ 3 ] [Li, Jiawei]Fudan University, School of Microelectronics, China
  • [ 4 ] [Zou, Peng]Shanghai LEDA Technology Co., Ltd., China
  • [ 5 ] [Sun, Haokai]Shanghai LEDA Technology Co., Ltd., China
  • [ 6 ] [Lin, Zhifeng]Fuzhou University, Center for Discrete Mathematics and Theoretical Computer Science, China
  • [ 7 ] [Chen, Jianli]Fudan University, School of Microelectronics, China

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ISSN: 0271-4310

Year: 2025

Language: English

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ESI Highly Cited Papers on the List: 0 Unfold All

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