The　layer　Hall　effect　is　an　intriguing　phenomenon　observed　in　magnetic　topological　layered　materials,　where　the　Hall　response　arises　from　the　opposite　deflection　of　electrons　on　top　and　bottom　layers.　To　realize　the　layer　Hall　effect,　space-time　PT　symmetry　is　typically　broken　by　applying　an　external　electric　field.　In　this　Letter,　we　propose　a　new　mechanism　to　realize　the　layer　Hall　effect　by　introducing　inequivalent　exchange　fields　on　both　surfaces　of　a　topological　insulator　thin　film　in　the　absence　of　an　electric　field.　This　approach　yields　a　distinct　Hall　response　compared　to　the　conventional　electric-field-induced　layer　Hall　effect,　particularly　with　respect　to　the　Fermi　level.　Taking　the　topological　insulator　Sb2Te3　as　a　concrete　example,　we　demonstrate　the　feasibility　of　inducing　the　layer　Hall　effect　only　by　coupling　the　top　and　bottom　surfaces　of　Sb2Te3　with　different　magnetic　insulators.　Notably,　we　show　that　both　built-in　electric-field-induced　and　inequivalent　exchange-field-induced　layer　Hall　effects　can　be　achieved　by　tuning　the　stacking　order　between　Sb2Te3　and　the　magnetic　layers.　Given　the　well-established　experimental　techniques　for　fabricating　topological　insulator　thin　films,　our　work　offers　a　viable　pathway　for　realizing　layer　Hall　effect　without　external　electric　field.