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author:

Guo, Huachang (Guo, Huachang.) [1] | He, Jun (He, Jun.) [2] | Sun, Jie (Sun, Jie.) [3] | Zhang, Kaixin (Zhang, Kaixin.) [4] | Huang, Zhonhang (Huang, Zhonhang.) [5] | Guo, Tailiang (Guo, Tailiang.) [6] | Yan, Qun (Yan, Qun.) [7] | Belyaev, Victor (Belyaev, Victor.) [8] | Abduev, Aslan (Abduev, Aslan.) [9] | Kazak, Alexander (Kazak, Alexander.) [10]

Indexed by:

SCIE

Abstract:

Micro light-emitting diodes (Micro-LEDs) are regarded as the core of next-generation display technology due to their high brightness and energy efficiency. However, the reduction in the size of Micro-LEDs has led to increased manufacturing challenges and exacerbated issues such as sidewall emission, which hinder the development of high-pixel-density displays. This paper proposes a vertically stacked Micro-LED design based on an L-shaped metal wall structure, aiming to suppress sidewall emission and enhance top light extraction efficiency (LEE). Through parameter scanning, the dimensions of the Micro-LED and the thickness of the epitaxial layer are optimized. Combined with inclined sidewalls and the reflective structure of the L-shaped metal wall, the optical characteristics of red, green, and blue Micro-LEDs are analyzed using ray-tracing simulations. The sidewall emission is significantly reduced (with a maximum reduction of 68.04% compared to vertically stacked Micro-LEDs without metal walls), and top light emission is enhanced (the LEE within +/- 90 degrees direction for blue, green, and red light increased by 196.18%, 51.69%, and 3.45%, respectively, compared to stacked Micro-LEDs without metal walls). The simulation results demonstrate the potential of the L-shaped metal wall in vertically stacked full-color Micro-LED displays, providing a new approach to suppressing optical crosstalk and improving display performance.

Keyword:

light extraction efficiency Micro-LED optical crosstalk sidewall emission vertical stacking

Community:

  • [ 1 ] [Guo, Huachang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China
  • [ 2 ] [He, Jun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China
  • [ 3 ] [Sun, Jie]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China
  • [ 4 ] [Huang, Zhonhang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China
  • [ 5 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China
  • [ 6 ] [Yan, Qun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China
  • [ 7 ] [Guo, Huachang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 8 ] [He, Jun]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 9 ] [Sun, Jie]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 10 ] [Huang, Zhonhang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 11 ] [Guo, Tailiang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 12 ] [Yan, Qun]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 13 ] [Zhang, Kaixin]Fujian Agr & Forestry Univ, Coll Mech & Elect Engn, Fujian Key Lab Agr Informat Sensoring Technol, Fuzhou 350002, Fujian, Peoples R China
  • [ 14 ] [Sun, Jie]Chalmers Univ Technol, Dept Microsci & Nanotechnol, S-41296 Gothenburg, Sweden
  • [ 15 ] [Belyaev, Victor]Fed State Univ Educ, Moscow 141014, Russia
  • [ 16 ] [Abduev, Aslan]Fed State Univ Educ, Moscow 141014, Russia
  • [ 17 ] [Kazak, Alexander]Fed State Univ Educ, Moscow 141014, Russia

Reprint 's Address:

  • [Sun, Jie]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China;;[Zhang, Kaixin]Fujian Agr & Forestry Univ, Coll Mech & Elect Engn, Fujian Key Lab Agr Informat Sensoring Technol, Fuzhou 350002, Fujian, Peoples R China;;[Sun, Jie]Chalmers Univ Technol, Dept Microsci & Nanotechnol, S-41296 Gothenburg, Sweden

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Source :

ADVANCED ELECTRONIC MATERIALS

ISSN: 2199-160X

Year: 2025

5 . 3 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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