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author:

Dong, Xiaoqian (Dong, Xiaoqian.) [1] | Lu, Yunyi (Lu, Yunyi.) [2] | Gong, Xiaoru (Gong, Xiaoru.) [3] | Liu, Lehui (Liu, Lehui.) [4] | Yuan, Feifei (Yuan, Feifei.) [5] | Huang, Yisheng (Huang, Yisheng.) [6] | Zhang, Lizhen (Zhang, Lizhen.) [7] | Lin, Zhoubin (Lin, Zhoubin.) [8]

Indexed by:

SCIE

Abstract:

The development of high-performance near-infrared (NIR) phosphor-converted LEDs (pc-LEDs) demands phosphors that exhibit broadband emission, high quantum yield, and excellent thermal stability-a combination that is rarely achieved in existing systems. Herein, we report a novel Cr3+-activated Y3MgAl3SiO12 (YMASO) phosphor synthesized via an efficient sol-gel route. Crystal field analysis reveals the coexistence of Cr3+ ions in both strong-field [AlO6] and weak-field [MgO6] octahedra, facilitating broadband emission with a full width at half maximum (FWHM) of 167 nm through dual-site engineering. The optimized YMASO:0.015Cr exhibits a remarkable internal quantum efficiency of 92.73 % and demonstrates favorable thermal stability. When integrated with a 410 nm blue LED chip, the fabricated NIR pc-LED achieves an output power of 27.55 mW and a photoelectric conversion efficiency of 8.7 % at 100 mA, surpassing most reported chromium (Cr3+)-based systems. This positions YMASO:Cr as a promising candidate for high-efficiency NIR pc-LED applications.

Keyword:

High-efficiency pc-LEDs phosphors Near-infrared phosphor Sol-gel method Y3MgAl3SiO12 phosphor

Community:

  • [ 1 ] [Dong, Xiaoqian]Fuzhou Univ, Coll Chem, Fuzhou 350108, Peoples R China
  • [ 2 ] [Lu, Yunyi]Fuzhou Univ, Coll Chem, Fuzhou 350108, Peoples R China
  • [ 3 ] [Dong, Xiaoqian]Chinese Acad Sci, Key Lab Optoelect Mat Chem & Phys, Fujian Inst Res Struct Matter, Fuzhou 350002, Fujian, Peoples R China
  • [ 4 ] [Lu, Yunyi]Chinese Acad Sci, Key Lab Optoelect Mat Chem & Phys, Fujian Inst Res Struct Matter, Fuzhou 350002, Fujian, Peoples R China
  • [ 5 ] [Gong, Xiaoru]Chinese Acad Sci, Key Lab Optoelect Mat Chem & Phys, Fujian Inst Res Struct Matter, Fuzhou 350002, Fujian, Peoples R China
  • [ 6 ] [Liu, Lehui]Chinese Acad Sci, Key Lab Optoelect Mat Chem & Phys, Fujian Inst Res Struct Matter, Fuzhou 350002, Fujian, Peoples R China
  • [ 7 ] [Yuan, Feifei]Chinese Acad Sci, Key Lab Optoelect Mat Chem & Phys, Fujian Inst Res Struct Matter, Fuzhou 350002, Fujian, Peoples R China
  • [ 8 ] [Huang, Yisheng]Chinese Acad Sci, Key Lab Optoelect Mat Chem & Phys, Fujian Inst Res Struct Matter, Fuzhou 350002, Fujian, Peoples R China
  • [ 9 ] [Zhang, Lizhen]Chinese Acad Sci, Key Lab Optoelect Mat Chem & Phys, Fujian Inst Res Struct Matter, Fuzhou 350002, Fujian, Peoples R China
  • [ 10 ] [Lin, Zhoubin]Chinese Acad Sci, Key Lab Optoelect Mat Chem & Phys, Fujian Inst Res Struct Matter, Fuzhou 350002, Fujian, Peoples R China
  • [ 11 ] [Liu, Lehui]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 12 ] [Huang, Yisheng]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 13 ] [Zhang, Lizhen]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 14 ] [Lin, Zhoubin]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350108, Peoples R China
  • [ 15 ] [Dong, Xiaoqian]Univ Chinese Acad Sci, Fujian Coll, Fuzhou 350002, Peoples R China
  • [ 16 ] [Lu, Yunyi]Univ Chinese Acad Sci, Fujian Coll, Fuzhou 350002, Peoples R China
  • [ 17 ] [Gong, Xiaoru]Univ Chinese Acad Sci, Fujian Coll, Fuzhou 350002, Peoples R China
  • [ 18 ] [Liu, Lehui]Univ Chinese Acad Sci, Fujian Coll, Fuzhou 350002, Peoples R China
  • [ 19 ] [Zhang, Lizhen]Univ Chinese Acad Sci, Fujian Coll, Fuzhou 350002, Peoples R China
  • [ 20 ] [Yuan, Feifei]Xiamen Tungsten Co Ltd, Xiamen 361000, Peoples R China
  • [ 21 ] [Yuan, Feifei]Rare Earth Adv Mat Technol Innovat Ctr, Baotou 014030, Peoples R China

Reprint 's Address:

  • [Zhang, Lizhen]Chinese Acad Sci, Key Lab Optoelect Mat Chem & Phys, Fujian Inst Res Struct Matter, Fuzhou 350002, Fujian, Peoples R China

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Source :

JOURNAL OF ALLOYS AND COMPOUNDS

ISSN: 0925-8388

Year: 2025

Volume: 1032

5 . 8 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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